ISC BUZ76A Soa is power dissipation limited Datasheet

isc Product Specification
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
BUZ76A
DESCRIPTION
·2.6A, 400V
·SOA is Power Dissipation Limited
·Nanosecond Switching Speeds
·Linear Transfer Characteristics
·High Input Impedance
·Majority Carrier Device
APPLICATIONS
·applications such as switching regulators, switching
converters, motor drivers,relay drivers, and drivers for
high power bipolar switching transistors requiring high
speed and low gate drive power.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
ARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
400
V
VGS
Gate-Source Voltage
±20
V
Drain [email protected] TC=37℃
2.6
A
Total [email protected]=25℃
40
W
Max. Operating Junction Temperature
-55-150
℃
Storage Temperature Range
-55-150
℃
ID
Ptot
Tj
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
3.1
℃/W
Rth j-a
Thermal Resistance,Junction to Ambient
75
℃/W
isc website:www.iscsemi.cn
PDF pdfFactory Pro
1
isc & iscsemi is registered trademark
www.fineprint.cn
isc Product Specification
INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
BUZ76A
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
MIN
V(BR)DSS
Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
400
VGS(TH)
Gate Threshold Voltage
VDS= VGS; ID= 1mA
2.1
RDS(ON)
Drain-Source On-stage Resistance
IGSS
MAX
UNIT
V
4
V
VGS= 10V; ID= 1.5A
2.5
Ω
Gate Source Leakage Current
VGS= ±20V;VDS= 0
±100
nA
IDSS
Zero Gate Voltage Drain Current
VDS= 400V;VGS= 0
250
uA
VSD
Diode Forward Voltage
IF= 5.2A;VGS= 0
1.4
V
isc website:www.iscsemi.cn
PDF pdfFactory Pro
2
isc & iscsemi is registered trademark
www.fineprint.cn
Similar pages