Microsemi JAN2N3501UB Radiation hardened npn silicon switching transistor Datasheet

2N3501UB
Qualified Levels:
JAN, JANTX, JANTXV
AND JANS
RADIATION HARDENED
NPN SILICON SWITCHING TRANSISTOR
compliant
Qualified per MIL-PRF-19500/366
DESCRIPTION
This 2N3501 epitaxial planar transistor is military qualified up to a JANS level for highreliability applications. This device is also available in thru hole TO-5 and TO-39 packaging as
well as a low profile U4 surface mount. Microsemi also offers numerous other transistor
products to meet higher and lower power ratings with various switching speed requirements in
both through-hole and surface-mount packages.
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
•
Surface mount equivalent of JEDEC registered 2N3501 number.
•
JAN, JANTX, JANTXV and JANS qualifications are available per MIL-PRF-19500/366.
UB Package
(See part nomenclature for all available options.)
•
RoHS compliant by design.
Also available in:
TO-5 package
(long-leaded)
2N3498L – 2N3501L
APPLICATIONS / BENEFITS
•
•
•
•
General purpose transistors for medium power applications requiring high frequency switching.
Low profile ceramic package.
Lightweight.
Military and other high-reliability applications.
TO-39 (TO-205AD)
package
(leaded)
2N3498 – 2N3501
U4 package
(surface mount)
2N3498U4 – 2N3501U4
MAXIMUM RATINGS @ TC = +25 ºC unless otherwise noted
Parameters / Test Conditions
Symbol
Value
Junction & Storage Temperature Range
TJ, Tstg
-65 to +200
Unit
°C
Thermal Resistance Junction-to-Ambient
RӨJA
325
o
Thermal Resistance Junction-to-Solder Pad
RӨJSP
90
o
Collector-Emitter Voltage
VCEO
150
V
Collector-Base Voltage
VCBO
150
V
Emitter-Base Voltage
VEBO
6.0
V
IC
300
mA
PT
0.5
1.5
W
Collector Current
Total Power Dissipation
(1)
@ TA = +25 °C
(2)
@ TSP = +25 °C
C/W
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Notes: 1. See figure 1.
2. See figure 2.
T4-LDS-0276-3, Rev. 1 (121564)
C/W
©2012 Microsemi Corporation
Page 1 of 7
2N3501UB
MECHANICAL and PACKAGING
•
•
•
•
•
•
CASE: Ceramic.
TERMINALS: Gold plating over nickel under plate.
MARKING: Part number, date code, manufacturer’s ID.
TAPE & REEL option: Standard per EIA-418D. Consult factory for quantities.
WEIGHT: < 0.04 Grams.
See Package Dimensions on last page.
PART NOMENCLATURE
JAN
2N3501
UB
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
JANS = JANS Level
Blank = Commercial
Surface Mount package
JEDEC type number
(see Electrical Characteristics
table)
Symbol
Cobo
ICEO
ICEX
IEBO
hFE
VCEO
VCBO
VEBO
SYMBOLS & DEFINITIONS
Definition
Common-base open-circuit output capacitance
Collector cutoff current, base open
Collector cutoff current, circuit between base and emitter
Emitter cutoff current, collector open
Common-emitter static forward current transfer ratio
Collector-emitter voltage, base open
Collector-emitter voltage, emitter open
Emitter-base voltage, collector open
T4-LDS-0276-3, Rev. 1 (121564)
©2012 Microsemi Corporation
Page 2 of 7
2N3501UB
ELECTRICAL CHARACTERISTICS @ TA = +25 °C, unless otherwise noted
Parameters / Test Conditions
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10 mA, pulsed
Symbol
Min.
V(BR)CEO
150
Max.
Unit
V
Collector-Base Cutoff Current
VCB = 75 V
VCB = 150 V
ICBO
50
10
nA
µA
Emitter-Base Cutoff Current
VEB = 4.0 V
VEB = 6.0 V
IEBO
25
10
nA
µA
ON CHARACTERISTICS
(1)
Forward-Current Transfer Ratio
IC = 0.1 mA, VCE = 10 V
IC = 1.0 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 150 mA, VCE = 10 V
IC = 300 mA, VCE = 10 V
hFE
35
50
75
100
20
300
Collector-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA
IC = 150 mA, IB = 15 mA
VCE(sat)
0.2
0.4
V
Base-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA
IC = 150 mA, IB = 15 mA
VBE(sat)
0.8
1.2
V
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio, Magnitude
IC = 20 mA, VCE = 20 V, f = 100 MHz
|hfe|
Output Capacitance
VCB = 10 V, IE = 0,
100 kHz < f < 1.0 MHz
Cobo
8.0
pF
Input Capacitance
VEB = 0.5 V, IC = 0, 100 kHz < f < 1.0 MHz
Cibo
80
pF
1.5
8.0
(1) Pulse Test: pulse width = 300 µs, duty cycle < 2.0%.
T4-LDS-0276-3, Rev. 1 (121564)
©2012 Microsemi Corporation
Page 3 of 7
2N3501UB
ELECTRICAL CHARACTERISTICS @ TA = +25 °C, unless otherwise noted (continued)
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Turn-On Time
VEB = 5 V; IC = 150 mA; IB1 = 15 mA
Turn-Off Time
IC = 150 mA; IB1 = IB2 = 15 mA
Symbol
Min.
Max.
Unit
ton
115
ns
toff
1150
ns
Collector Current IC (Milliamperes)
SAFE OPERATING AREA (See SOA figure and reference MIL-STD-750 method 3053)
DC Tests
o
TC = +25 C, tr > 10 ns; 1 Cycle, t = 1.0 s
Test 1
VCE = 10 V, IC = 113 mA
Test 2
VCE = 50 V, IC = 23 mA
Test 3
VCE = 80 V, IC = 14 mA
Clamped Switching
o
TA = +25 C
Test 1
IB = 50 mA, IC = 300 mA
Collector to Emitter Voltage VCE (Volts)
Maximum Safe Operating Area
T4-LDS-0276-3, Rev. 1 (121564)
©2012 Microsemi Corporation
Page 4 of 7
2N3501UB
DC Operation Maximum Rating (W)
GRAPHS
Tc (°C) (Case)
FIGURE 1
DC Operation Maximum Rating (W)
Derating for all devices (RθJSP) H
Tc (°C) (Case)
FIGURE 2
Derating for all devices (RθJA)
T4-LDS-0276-3, Rev. 1 (121564)
©2012 Microsemi Corporation
Page 5 of 7
2N3501UB
o
Theta ( C/W)
GRAPHS
Time (s)
FIGURE 3
Thermal impedance graph (RθJSP)
T4-LDS-0276-3, Rev. 1 (121564)
©2012 Microsemi Corporation
Page 6 of 7
2N3501UB
PACKAGE DIMENSIONS
Lid
Symbol
BH
BL
BW
CL
CW
LL1
LL2
Inch
Min
.046
.115
.085
.022
.017
Dimensions
Millimeters
Max
Min
Max
.056
1.17
1.42
.128
2.92
3.25
.108
2.16
2.74
.128
3.25
.108
2.74
.038
0.56
0.97
.035
0.43
0.89
Note
Symbol
LS1
LS2
LW
r
r1
r2
Inch
Min
.036
.071
.016
-
Dimensions
Millimeters
Max
Min
Max
.040
0.91
1.02
.079
1.80
2.01
.024
0.41
0.61
.008
0.203
.012
0.305
.022
0.559
Note
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Hatched areas on package denote metallized areas.
4. Lid material: Kovar.
5. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid.
6. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
T4-LDS-0276-3, Rev. 1 (121564)
©2012 Microsemi Corporation
Page 7 of 7
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