2N3501UB Qualified Levels: JAN, JANTX, JANTXV AND JANS RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR compliant Qualified per MIL-PRF-19500/366 DESCRIPTION This 2N3501 epitaxial planar transistor is military qualified up to a JANS level for highreliability applications. This device is also available in thru hole TO-5 and TO-39 packaging as well as a low profile U4 surface mount. Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • Surface mount equivalent of JEDEC registered 2N3501 number. • JAN, JANTX, JANTXV and JANS qualifications are available per MIL-PRF-19500/366. UB Package (See part nomenclature for all available options.) • RoHS compliant by design. Also available in: TO-5 package (long-leaded) 2N3498L – 2N3501L APPLICATIONS / BENEFITS • • • • General purpose transistors for medium power applications requiring high frequency switching. Low profile ceramic package. Lightweight. Military and other high-reliability applications. TO-39 (TO-205AD) package (leaded) 2N3498 – 2N3501 U4 package (surface mount) 2N3498U4 – 2N3501U4 MAXIMUM RATINGS @ TC = +25 ºC unless otherwise noted Parameters / Test Conditions Symbol Value Junction & Storage Temperature Range TJ, Tstg -65 to +200 Unit °C Thermal Resistance Junction-to-Ambient RӨJA 325 o Thermal Resistance Junction-to-Solder Pad RӨJSP 90 o Collector-Emitter Voltage VCEO 150 V Collector-Base Voltage VCBO 150 V Emitter-Base Voltage VEBO 6.0 V IC 300 mA PT 0.5 1.5 W Collector Current Total Power Dissipation (1) @ TA = +25 °C (2) @ TSP = +25 °C C/W MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com Notes: 1. See figure 1. 2. See figure 2. T4-LDS-0276-3, Rev. 1 (121564) C/W ©2012 Microsemi Corporation Page 1 of 7 2N3501UB MECHANICAL and PACKAGING • • • • • • CASE: Ceramic. TERMINALS: Gold plating over nickel under plate. MARKING: Part number, date code, manufacturer’s ID. TAPE & REEL option: Standard per EIA-418D. Consult factory for quantities. WEIGHT: < 0.04 Grams. See Package Dimensions on last page. PART NOMENCLATURE JAN 2N3501 UB Reliability Level JAN = JAN Level JANTX = JANTX Level JANTXV = JANTXV Level JANS = JANS Level Blank = Commercial Surface Mount package JEDEC type number (see Electrical Characteristics table) Symbol Cobo ICEO ICEX IEBO hFE VCEO VCBO VEBO SYMBOLS & DEFINITIONS Definition Common-base open-circuit output capacitance Collector cutoff current, base open Collector cutoff current, circuit between base and emitter Emitter cutoff current, collector open Common-emitter static forward current transfer ratio Collector-emitter voltage, base open Collector-emitter voltage, emitter open Emitter-base voltage, collector open T4-LDS-0276-3, Rev. 1 (121564) ©2012 Microsemi Corporation Page 2 of 7 2N3501UB ELECTRICAL CHARACTERISTICS @ TA = +25 °C, unless otherwise noted Parameters / Test Conditions OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 10 mA, pulsed Symbol Min. V(BR)CEO 150 Max. Unit V Collector-Base Cutoff Current VCB = 75 V VCB = 150 V ICBO 50 10 nA µA Emitter-Base Cutoff Current VEB = 4.0 V VEB = 6.0 V IEBO 25 10 nA µA ON CHARACTERISTICS (1) Forward-Current Transfer Ratio IC = 0.1 mA, VCE = 10 V IC = 1.0 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 150 mA, VCE = 10 V IC = 300 mA, VCE = 10 V hFE 35 50 75 100 20 300 Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA IC = 150 mA, IB = 15 mA VCE(sat) 0.2 0.4 V Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA IC = 150 mA, IB = 15 mA VBE(sat) 0.8 1.2 V DYNAMIC CHARACTERISTICS Forward Current Transfer Ratio, Magnitude IC = 20 mA, VCE = 20 V, f = 100 MHz |hfe| Output Capacitance VCB = 10 V, IE = 0, 100 kHz < f < 1.0 MHz Cobo 8.0 pF Input Capacitance VEB = 0.5 V, IC = 0, 100 kHz < f < 1.0 MHz Cibo 80 pF 1.5 8.0 (1) Pulse Test: pulse width = 300 µs, duty cycle < 2.0%. T4-LDS-0276-3, Rev. 1 (121564) ©2012 Microsemi Corporation Page 3 of 7 2N3501UB ELECTRICAL CHARACTERISTICS @ TA = +25 °C, unless otherwise noted (continued) SWITCHING CHARACTERISTICS Parameters / Test Conditions Turn-On Time VEB = 5 V; IC = 150 mA; IB1 = 15 mA Turn-Off Time IC = 150 mA; IB1 = IB2 = 15 mA Symbol Min. Max. Unit ton 115 ns toff 1150 ns Collector Current IC (Milliamperes) SAFE OPERATING AREA (See SOA figure and reference MIL-STD-750 method 3053) DC Tests o TC = +25 C, tr > 10 ns; 1 Cycle, t = 1.0 s Test 1 VCE = 10 V, IC = 113 mA Test 2 VCE = 50 V, IC = 23 mA Test 3 VCE = 80 V, IC = 14 mA Clamped Switching o TA = +25 C Test 1 IB = 50 mA, IC = 300 mA Collector to Emitter Voltage VCE (Volts) Maximum Safe Operating Area T4-LDS-0276-3, Rev. 1 (121564) ©2012 Microsemi Corporation Page 4 of 7 2N3501UB DC Operation Maximum Rating (W) GRAPHS Tc (°C) (Case) FIGURE 1 DC Operation Maximum Rating (W) Derating for all devices (RθJSP) H Tc (°C) (Case) FIGURE 2 Derating for all devices (RθJA) T4-LDS-0276-3, Rev. 1 (121564) ©2012 Microsemi Corporation Page 5 of 7 2N3501UB o Theta ( C/W) GRAPHS Time (s) FIGURE 3 Thermal impedance graph (RθJSP) T4-LDS-0276-3, Rev. 1 (121564) ©2012 Microsemi Corporation Page 6 of 7 2N3501UB PACKAGE DIMENSIONS Lid Symbol BH BL BW CL CW LL1 LL2 Inch Min .046 .115 .085 .022 .017 Dimensions Millimeters Max Min Max .056 1.17 1.42 .128 2.92 3.25 .108 2.16 2.74 .128 3.25 .108 2.74 .038 0.56 0.97 .035 0.43 0.89 Note Symbol LS1 LS2 LW r r1 r2 Inch Min .036 .071 .016 - Dimensions Millimeters Max Min Max .040 0.91 1.02 .079 1.80 2.01 .024 0.41 0.61 .008 0.203 .012 0.305 .022 0.559 Note NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Hatched areas on package denote metallized areas. 4. Lid material: Kovar. 5. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid. 6. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. T4-LDS-0276-3, Rev. 1 (121564) ©2012 Microsemi Corporation Page 7 of 7