^zml-Gonauctoi iJ^toauati, line.. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BUZ 50 B N channel Enhancement mode Pin1 Pin 2 Pin 3 D Type Vbs ID ^DS(on) Package BUZ 50 B 1000V 2A 8Q TO-220 AB Maximum Ratings Parameter Symbol Drain source voltage VDS Drain-gate voltage 1000 V 1000 A ID Tc = 25 °C Pulsed drain current Unit DGR f?GS = 20 kQ Continuous drain current Values 2 /Dpuls rc = 25 °c 8 Gate source voltage VGS Power dissipation Plot Tc = 25 °C V ±20 W 78 Operating temperature T.} -55 Storage temperature Tofn -55 ... . + 150 Thermal resistance, chip case KthJC <1.6 Thermal resistance, chip to ambient ^thJA 75 DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 + 150 °C K/W C 55/150/56 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors BUZ 50 B Electrical Characteristics, at 71 = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V ^(BRPSS VGS = 0 V, ID = 0.25 mA, 7] = 25 °C Gate threshold voltage \/GS=vbs, /D = 1 mA Zero gate voltage drain current 1000 - - ^GS(th) 2.1 3 4 IDSS MA VDS = 1000 V, VGS = 0 V, 7] = 25 °C - 20 250 VDS = 1000 V, VGS = 0 V, 7] = 125 °C - 100 1000 Gate-source leakage current - VGS = 20 V, VDS = 0 V Drain-Source on-resistance V G S =10V, /D = 1.5A nA /GSS 10 100 Q ^DS(on) - 6.5 8 BUZ 50 B Electrical Characteristics, at 71 = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance 0.7 VQS- 2 * ID * ^DS(on)max, /D = 1 -5 A Input capacitance S 9fs PF Qss VGS = 0 V, Vbs = 25 V, f= 1 MHz Output capacitance Coss VGS = 0 V, VDS = 25 V, f= 1 MHz Reverse transfer capacitance . 1600 2100 70 120 30 55 Qss VGS = 0 V, VDS = 25 V, f= 1 MHz Turn-on delay time 1.5 ns <d,on, VDD = 30 V, VGS = 10 V, /D = 2 A 30 45 40 60 110 140 60 80 Rise time VDD = 30V, VGS = 10V, /D = 2 A " RGS = 50 Q Turn-off delay time ^d(off) VDD = 30 v, VGS = 10 v, /D = 2 A RGS = 50 Q Fall time VDD = 30V, VGS = 10V, /D = 2 A RGS = 50 Q * BUZ 50 B Electrical Characteristics, at 7j = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current Is Tc = 25 °C Inverse diode direct current.pulsed VR = 100 V, /F=/s, d/F/df = 100 A/us 2 - - 8 V - 1.05 1.3 us *rr I/R = 100 V, /F=/Si d/F/df = 100 A/us Reverse recovery charge - VSD VGS = 0 V, IF = 6 A Reverse recovery time - !SM Tc = 25 °C Inverse diode forward voltage A - 2 - uC Qrr - 15 -