SEMICONDUCTOR MPSA44/45 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. FEATURES B C ᴌHigh Breakdown Voltage. A ᴌCollector Power Dissipation : PC=625mW. N E K MAXIMUM RATING (Ta=25ᴱ) MPSA44 Voltage MPSA45 Collector-Emitter MPSA44 Voltage MPSA45 J 500 VCBO 400 400 VCEO 350 UNIT V V VEBO 6 V Collector Current IC 300 mA Collector Power Dissipation PC 625 mW Junction Temperature Tj 150 ᴱ Tstg -55ᴕ150 ᴱ Emitter-Base Voltage Storage Temperature Range H F F 1 2 3 C Collector-Base RATING MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.45 MAX 1.00 M SYMBOL L CHARACTERISTIC G D DIM A B C D E F G H J K L M N 1. EMITTER 2. BASE 3. COLLECTOR TO-92 ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base MPSA44 Breakdown Voltage MPSA45 Collector-Emitter MPSA44 Breakdown Voltage (1) MPSA45 TEST CONDITION MIN. 500 TYP. MAX. UNIT - - V - - V V(BR)CBO IC=100ỌA, IE=0 V(BR)CEO IC=1mA, IB=0 Collector-Emitter Breakdown Voltage (2) V(BR)CES IC=100ỌA, IB=0 400 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=10ỌA, IC=0 6.0 - - V - - - - - - 100 VCE=10V, IC=1mA 40 - - VCE=10V, IC=10mA 50 - 200 VCE=10V, IC=50mA 45 - - VCE=10V, IC=100mA 40 - - MPSA44 Collector Cut off Current ICBO MPSA45 MPSA44 Collector Cut off Current ICES MPSA45 IEBO Emitter Cutoff Current DC Current Gain hFE * Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage * * VCB=400V, IE=0 VCB=320V, IE=0 VCE=400V, IB=0 VCE=320V, IB=0 VEB=4V, IC=0 400 400 350 100 100 500 500 nA nA nA VCE(sat) IC=10mA, IB=1mA - - 0.5 V VBE(sat) IC=10mA, IB=1mA - - 0.75 V *Pulse Test : Pulse Width⏊300Ọ S, Duty Cycle⏊2.0% 1997. 10. 21 Revision No : 2 1/3 MPSA44/45 h FE - I C 200 10 COMMON EMITTER VCE =10V 180 160 V CC =150V I C /I B =10 Ta=25 C V BE (OFF)=4V 5 3 140 TIME t (µS) DC CURRENT GAIN h FE TURN-ON SWITCHING CHARACTERISTICS 120 100 80 60 1 0.5 0.3 40 tr 20 1 10 100 1 3 10 100 30 TURN-OFF SWITCHING CHARACTERISTICS C ib , C ob - V CB 1k CAPACITANCE C ib (pF), Cob (pF) VCC =150V I C /I B =10 Ta=25 C 10 5 3 ts 1 0.5 0.3 tf 0.1 1 3 10 30 C ib 50 30 C ob 10 5 3 1 0.1 1 10 100 1k COLLECTOR-BASE VOLTAGE VCB (V) V BE(sat) , V CE(sat) - I C COLLECTOR SATURATION REGION @I C /I B =10 VBE(sat) 0.8 0.6 VBE(on) @VCE =10V 0.4 V CE(sat) @I C /IB =10 0 0.1 100 COLLECTOR CURRENT I C (mA) Ta=25 C 0.2 Ta=25 C f=1MHz 500 300 100 1 10 100 COLLECTOR CURRENT I C (mA) Revision No : 3 1k COLLECTOR EMITTER VOLTAGE VCE (V) 1.0 SATURATION VOLTAGE V BE(sat) , V CE(sat) (V) 1 0k COLLECTOR CURRENT I C (mA) 50 30 TIME t (µS) 1k COLLECTOR CURRENT I C (A) 100 1999. 11. 30 td 0.1 0 0.5 Ta=25 C 0.4 I C =1mA I C =10mA I C =50mA 0.3 0.2 0.1 0 10 100 1k 10k 100k BASE CURRENT I B (µA) 2/3 MPSA44/45 100 SAFE OPERATING AREA VCE =10V f=10MHz Ta=25 C 30 10 3 1 0.3 0.1 0.1 1 10 100 COLLECTOR CURRENT I C (mA) 1997. 10. 21 COLLECTOR CURRENT I C (mA) SMALL SIGNAL CURRENT GAIN h FE h FE - I C Revision No : 2 1k 100k Valld for Duty < 10% 3k 1k 100µs 1ms 300 Ta 100 30 1s Tc =2 5 =2 5 C C 10 3 MPSA45 1 1 3 10 30 100 300 1k 3k 10k COLLECTOR-EMITTER VOLTAGE VCE (V) 3/3