IPB120N08S4-04 IPI120N08S4-04, IPP120N08S4-04 OptiMOS®-T2 Power-Transistor Product Summary V DS 80 V R DS(on),max (SMD version) 4.1 mW ID 120 A Features • N-channel - Enhancement mode PG-TO263-3-2 • AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPB120N08S4-04 PG-TO263-3-2 4N0804 IPI120N08S4-04 PG-TO262-3-1 4N0804 IPP120N08S4-04 PG-TO220-3-1 4N0804 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Conditions Value T C=25°C, V GS=10V1) 120 T C=100°C, V GS=10V2) 108 Unit A Pulsed drain current2) I D,pulse T C=25°C 480 Avalanche energy, single pulse2) E AS I D=60A 310 mJ Avalanche current, single pulse I AS - 99 A Gate source voltage V GS - ±20 V Power dissipation P tot T C=25°C 179 W Operating and storage temperature T j, T stg - -55 ... +175 °C Rev. 1.0 page 1 2014-06-20 IPB120N08S4-04 IPI120N08S4-04, IPP120N08S4-04 Parameter Symbol Values Conditions Unit min. typ. max. Thermal characteristics2) Thermal resistance, junction - case R thJC - - - 0.84 Thermal resistance, junction ambient, leaded R thJA - - - 62 SMD version, device on PCB R thJA minimal footprint - - 62 6 cm2 cooling area3) - - 40 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0V, I D= 1mA 80 - - Gate threshold voltage V GS(th) V DS=V GS, I D=120µA 2.0 3.0 4.0 Zero gate voltage drain current I DSS V DS=80V, V GS=0V - 0.03 1 T j=125°C2) - 10 200 V DS=80V, V GS=0V, V µA Gate-source leakage current I GSS V GS=20V, V DS=0V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10V, I D=100A - 3.8 4.4 mW V GS=10V, I D=100A, SMD version - 3.5 4.1 Rev. 1.0 page 2 2014-06-20 IPB120N08S4-04 IPI120N08S4-04, IPP120N08S4-04 Parameter Symbol Values Conditions Unit min. typ. max. - 4850 6450 - 1870 2490 Dynamic characteristics2) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 100 200 Turn-on delay time t d(on) - 20 - Rise time tr - 10 - Turn-off delay time t d(off) - 30 - Fall time tf - 35 - Gate to source charge Q gs - 25 33 Gate to drain charge Q gd - 15 30 Gate charge total Qg - 70 95 Gate plateau voltage V plateau - 5.2 - V - - 120 A - - 480 V GS=0V, V DS=25V, f =1MHz V DD=40V, V GS=10V, I D=120A, R G=3.5W pF ns Gate Charge Characteristics2) V DD=60V, I D=120A, V GS=0 to 10V nC Reverse Diode Diode continous forward current2) IS Diode pulse current2) I S,pulse Diode forward voltage V SD V GS=0V, I F=100A, T j=25°C - 0.9 1.3 V Reverse recovery time2) t rr V R=40V, I F=50A, di F/dt =100A/µs - 70 - ns Reverse recovery charge2) Q rr - 130 - nC T C=25°C 1) Current is limited by bondwire; with an R thJC = 0.84K/W the chip is able to carry 149A at 25°C. 2) Specified by design. Not subject to production test. 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2014-06-20 IPB120N08S4-04 IPI120N08S4-04, IPP120N08S4-04 1 Power dissipation 2 Drain current P tot = f(T C); V GS ≥ 6 V I D = f(T C); V GS = 10 V; SMD 200 140 120 160 100 120 I D [A] P tot [W] 80 60 80 40 40 20 0 0 0 50 100 150 200 0 50 100 T C [°C] 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0; SMD Z thJC = f(t p) parameter: t p parameter: D =t p/T 101 1000 1 µs 10 µs 100 100 µs 1 ms 100 I D [A] Z thJC [K/W] 0.5 10-1 0.1 0.05 10 0.01 10-2 single pulse 1 0.1 1 10 100 10-3 10-6 10-5 10-4 -3 t 10 p [s] 10-2 10-1 100 V DS [V] Rev. 1.0 page 4 2014-06-20 IPB120N08S4-04 IPI120N08S4-04, IPP120N08S4-04 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C; SMD R DS(on) = f(I D); T j = 25 °C; SMD parameter: V GS parameter: V GS 480 10 10 V 7V 5V 360 6.5 V 6V 5.5 V 7V 8 240 R DS(on) [mW] I D [A] 6.5 V 6V 6 5.5 V 120 4 10 V 5V 0 2 0 1 2 3 4 5 0 120 240 V DS [V] 360 480 I D [A] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 120 A; V GS = 10 V; SMD parameter: T j 480 7 -55 °C 25 °C 6 R DS(on) [mW] 360 I D [A] 175 °C 240 5 4 120 3 0 3 4 5 6 7 -60 -20 20 60 100 140 180 T j [°C] V GS [V] Rev. 1.0 2 page 5 2014-06-20 IPB120N08S4-04 IPI120N08S4-04, IPP120N08S4-04 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 104 4 Ciss 3.5 C [pF] Coss 3 V GS(th) [V] 1200 µA 103 120 µA 2.5 Crss 102 2 1.5 1 101 -60 -20 20 60 100 140 0 180 5 10 T j [°C] 15 20 25 30 V DS [V] 11 Typical forward diode characteristicis 12 Avalanche characteristics IF = f(VSD) I A S= f(t AV) parameter: T j parameter: Tj(start) 103 1000 102 100 I F [A] I AV [A] 25 °C 175 °C 175 °C 25 °C 101 10 100 1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 V SD [V] Rev. 1.0 100 °C 150 °C 1 10 100 1000 t AV [µs] page 6 2014-06-20 IPB120N08S4-04 IPI120N08S4-04, IPP120N08S4-04 13 Avalanche energy 14 Drain-source breakdown voltage E AS = f(T j) V BR(DSS) = f(T j); I D = 1 mA parameter: I D 88 700 86 600 30 A 84 500 V BR(DSS) [V] E AS [mJ] 82 400 300 60 A 80 78 200 76 99 A 100 74 72 0 25 75 125 -55 175 -15 25 65 105 145 T j [°C] T j [°C] 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 120 A pulsed parameter: V DD 10 V GS 9 Qg 16 V 8 64 V 7 V GS [V] 6 5 V g s(th) 4 3 2 Q g (th) Q sw 1 Q gs 0 0 20 40 60 Q gate Q gd 80 Q gate [nC] Rev. 1.0 page 7 2014-06-20 IPB120N08S4-04 IPI120N08S4-04, IPP120N08S4-04 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2014 All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2014-06-20 IPB120N08S4-04 IPI120N08S4-04, IPP120N08S4-04 Revision History Version Date Changes Revision 1.0 Rev. 1.0 20.06.2014 Final data sheet page 9 2014-06-20