CYSTEKEC MTD140P15Q8 P-channel enhancement mode power mosfet Datasheet

CYStech Electronics Corp.
Spec. No. : C946Q8
Issued Date : 2015.07.25
Revised Date :
Page No. : 1/9
P-Channel Enhancement Mode Power MOSFET
MTD140P15Q8
BVDSS
ID@VGS=-10V, TA=25°C
RDSON@VGS=-10V, ID=-3A
RDSON@VGS=-4.5V, ID=-3A
Features
-150V
-3A
133mΩ(typ)
152mΩ(typ)
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free and Halogen-free package
Equivalent Circuit
Outline
MTD140P15Q8
SOP-8
G:Gate
S:Source
D:Drain
Ordering Information
Device
MTD140P15Q8-0-T3-G
Package
SOP-8
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTD140P15Q8
CYStek Product Specification
Spec. No. : C946Q8
Issued Date : 2015.07.25
Revised Date :
Page No. : 2/9
CYStech Electronics Corp.
Absolute Maximum Ratings (TA=25°C, unless otherwise noted)
Parameter
Drain-Source Breakdown Voltage
Gate-Source Voltage
Continuous Drain Current @TA=25 °C, VGS=-10V
Continuous Drain Current @TA=70 °C, VGS=-10V
Pulsed Drain Current (Note 1)
Single Pulse Avalanche Current
Single Pulse Avalanche Energy @ L=30mH, IAS=-3A, VDD=-50V
TA=25 °C
Power Dissipation
(Note 2)
TA=70 °C
Operating Junction and Storage Temperature Range
Symbol
BVDSS
VGS
ID
IDM
IAS
EAS
PD
Tj ; Tstg
Limits
-150
±20
-3
-2.4
-12
-3
135
3.1
2
-55~+150
Unit
V
A
mJ
W
°C
Note : 1.Pulse width limited by maximum junction temperature.
2.Surface mounted on 1 in² copper pad of FR-4 board, t≤10s.
Thermal Resistance Ratings
Thermal Resistance
Junction-to-Case, max
Junction-to-Ambient, max (Note)
Symbol
RθJC
RθJA
Maximum
3
40
Unit
°C / W
Note : W when mounted on a 1 in2 pad of 2 oz copper, t≤10s; 125°C/W when mounted on minimum copper pad.
Electrical Characteristics (Tc=25°C, unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
Static
BVDSS
-150
V
VGS(th)
-1
-2.5
IGSS
±100
nA
IDSS
-1
μA
IDSS
-5
133
175
RDS(ON) (Note 1)
mΩ
152
200
GFS
11
S
(Note 1)
Dynamic
Ciss
1875
pF
Coss
119
Crss
65
td(ON) (Note 1&2)
17.2
tr
19.4
(Note 1&2)
ns
td(OFF) (Note 1&2)
63.4
tf
24.6
(Note 1&2)
Qg (Note 1&2)
36.3
nC
Qgs (Note 1&2)
6.4
Qgd (Note 1&2)
8
MTD140P15Q8
Test Conditions
VGS=0V, ID=-250μA
VDS=VGS, ID=-250μA
VGS=±20V, VDS=0V
VDS=-120V, VGS=0V
VDS=-120V, VGS=0, Tj=55°C
ID=-3A, VGS=-10V
ID=-3A, VGS=-4.5V
VDS=-5V, ID=-3A
VDS=-30V, VGS=0, f=1MHz
VDS=-75V, ID=-1.3A, VGS=-10V,
RG=6.5Ω
VDS=-75V, ID=-1.3A, VGS=-10V
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C946Q8
Issued Date : 2015.07.25
Revised Date :
Page No. : 3/9
Electrical Characteristics(Cont.) (Tj=25°C, unless otherwise specified)
Symbol
Min.
Source-Drain Diode
IS
ISM(Note 3)
VSD(Note 1)
trr
Qrr
-
Typ.
Max.
-0.76
32
44
-3
-12
-1.2
-
Unit
Test Conditions
A
V
ns
nC
IS=-3A, VGS=0V
IF=-1.3A, dIF/dt=100A/μs
Note : 1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
2.Independent of operating temperature
3.Pulse width limited by maximum junction temperature
Recommended Soldering Footprint
MTD140P15Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C946Q8
Issued Date : 2015.07.25
Revised Date :
Page No. : 4/9
Typical Characteristics
Normalized Brekdown Voltage vs Ambient
Temperature
Typical Output Characteristics
12.0
-I D, Drain Current (A)
10.0
-BVDSS, Normalized Drain-Source
Breakdown Voltage
1.4
-10V, -9V,-8V,-7V,-6V,-5V,-4.5V
8.0
-4V
6.0
4.0
Tj=25°C
VGS=-3.5V
2.0
1.2
1
0.8
ID=-250μA,
VGS=0V
0.6
0.0
0
2
4
6
8
-VDS, Drain-Source Voltage(V)
-75 -50 -25
10
Static Drain-Source On-State resistance vs Drain Current
Source Drain Current vs Source-Drain Voltage
1000
R DS(on) , Static Drain-Source On-State
Resistance(mΩ)
1.2
-VSD, Source-Drain Voltage(V)
VGS=0V
VGS=-4.5V
100
VGS=-10V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
10
0.1
1
-ID, Drain Current(A)
0
10
4
8
12
16
-IS, Source Drain Current(A)
20
Normalized Drain-Source On-State Resistance vs
Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
1000
2.2
900
R DS(on) , Normalized Static DrainSource On-State Resistance
R DS(on) , Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
ID=-3A
800
700
600
500
400
300
200
100
2
VGS=-10V, ID=-3A
1.8
1.6
1.4
1.2
1
0.8
0.6
RDS(ON) @Tj=25°C : 133mΩ typ.
0.4
0.2
0
0
MTD140P15Q8
2
4
6
8
-VGS, Gate-Source Voltage(V)
10
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C946Q8
Issued Date : 2015.07.25
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
Normalized Threshold Voltage vs Junction
Tempearture
Capacitance vs Drain-to-Source Voltage
1.6
10000
1.4
-VGS(th) , Normalized Threshold
Voltage
Capacitance---(pF)
Ciss
1000
C oss
100
Crss
1.2
ID=-1mA
1
0.8
0.6
ID=-250μA
0.4
0.2
10
0.1
1
10
-VDS, Drain-Source Voltage(V)
-75 -50 -25
100
Forward Transfer Admittance vs Drain Current
Gate Charge Characteristics
10
-VGS, Gate-Source Voltage(V)
GFS, Forward Transfer Admittance(S)
100
10
1
VDS=-5V
Pulsed
TA=25°C
0.1
8
VDS=-75V
VDS=-30V
6
4
VDS=-120V
2
ID=-1.3A
0.01
0.001
0
0.01
0.1
1
-ID, Drain Current(A)
0
10
4
8
12 16 20 24 28 32
Qg, Total Gate Charge(nC)
36
40
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
3.5
10
-I D, Maximum Drain Current(A)
100
-I D, Drain Current(A)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
100μs
1ms
1
10ms
100ms
0.1
TA=25°C, Tj=150°C, VGS=-10V
RθJA=40°C/W, Single Pulse
1s
DC
0.01
0.1
MTD140P15Q8
1
10
100
-VDS, Drain-Source Voltage(V)
3.0
2.5
2.0
1.5
1.0
TA=25°C, VGS=-10V, RθJA=40°C/W
0.5
0.0
1000
25
50
75
100
125
150
Tj, Junction Temperature(°C)
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C946Q8
Issued Date : 2015.07.25
Revised Date :
Page No. : 6/9
Typical Characteristics(Cont.)
300
12.0
VDS=-10V
TJ(MAX) =150°C
TA=25°C
RθJA=40°C/W
10.0
-I D, Drain Current(A)
250
Power (W)
Typical Transfer Characteristics
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
200
150
100
50
8.0
6.0
4.0
2.0
0
0.001
0.0
0.01
0.1
1
Pulse Width(s)
10
100
0
1
2
3
4
5
-VGS, Gate-Source Voltage(V)
6
Transient Thermal Response Curves
r(t), Normalized Transient Thermal Resistance
10
1
D=0.5
0.2
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=40°C/W
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
0.0001
MTD140P15Q8
0.001
0.01
0.1
1
t1, Square Wave Pulse Duration(s)
10
100
1000
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C946Q8
Issued Date : 2015.07.25
Revised Date :
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTD140P15Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C946Q8
Issued Date : 2015.07.25
Revised Date :
Page No. : 8/9
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTD140P15Q8
CYStek Product Specification
Spec. No. : C946Q8
Issued Date : 2015.07.25
Revised Date :
Page No. : 9/9
CYStech Electronics Corp.
SOP-8 Dimension
Marking:
Device Name
Date Code
D140
P15
□□□□
8-Lead SOP-8 Plastic Package
CYStek Package Code: Q8
*: Typical
Inches
Min.
Max.
0.1850
0.2007
0.1496
0.1575
0.2283
0.2441
0.0500*
0.0130
0.0201
0.1472
0.1527
DIM
A
B
C
D
E
F
Millimeters
Min.
Max.
4.70
5.10
3.80
4.00
5.80
6.20
1.27 *
0.33
0.51
3.74
3.88
DIM
G
H
I
J
K
L
Inches
Min.
Max.
0.0531
0.0689
0.1889
0.2007
0.0019
0.0098
0.0157
0.0500
0.0067
0.0098
0.0531
0.0610
Millimeters
Min.
Max.
1.35
1.75
4.80
5.10
0.05
0.25
0.40
1.27
0.17
0.25
1.35
1.55
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTD140P15Q8
CYStek Product Specification
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