MOTOROLA MTB36N06V

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SEMICONDUCTOR TECHNICAL DATA
 
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Motorola Preferred Device
TMOS POWER FET
32 AMPERES
60 VOLTS
RDS(on) = 0.04 OHM
N–Channel Enhancement–Mode Silicon Gate
TMOS V is a new technology designed to achieve an on–resistance
area product about one–half that of standard MOSFETs. This new
technology more than doubles the present cell density of our 50
and 60 volt TMOS devices. Just as with our TMOS E–FET designs,
TMOS V is designed to withstand high energy in the avalanche and
commutation modes. Designed for low voltage, high speed
switching applications in power supplies, converters and power
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas
are critical and offer additional safety margin against unexpected
voltage transients.
New Features of TMOS V
• On–resistance Area Product about One–half that of Standard
MOSFETs with New Low Voltage, Low RDS(on) Technology
• Faster Switching than E–FET Predecessors
TM
D
G
S
CASE 418B–02, Style 2
D2PAK
Features Common to TMOS V and TMOS E–FETs
• Avalanche Energy Specified
• IDSS and VDS(on) Specified at Elevated Temperature
• Static Parameters are the Same for both TMOS V and
TMOS E–FET
• Surface Mount Package Available in 16 mm 13–inch/2500 Unit
Tape & Reel, Add T4 Suffix to Part Number
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol
Value
Unit
VDSS
VDGR
VGS
VGSM
60
Vdc
60
Vdc
± 20
± 25
Vdc
Vpk
Drain Current — Continuous @ 25°C
Drain Current — Continuous @ 100°C
Drain Current — Single Pulse (tp ≤ 10 µs)
ID
ID
IDM
32
22.6
112
Adc
Total Power Dissipation @ 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C (1)
PD
90
0.6
3.0
Watts
W/°C
Watts
TJ, Tstg
EAS
– 55 to 175
°C
205
mJ
RθJC
RθJA
RθJA
1.67
62.5
50
°C/W
TL
260
°C
Rating
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 MΩ)
Gate–to–Source Voltage — Continuous
Gate–Source Voltage — Non–Repetitive (tp ≤ 50 µs)
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — STARTING TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, PEAK IL = 32 Apk, L = 0.1 mH, RG = 25 Ω)
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
Thermal Resistance — Junction to Ambient (1)
Maximum Lead Temperature for Soldering Purposes, 1/8″ from Case for 10 seconds
(1) When surface mounted to an FR4 board using the minimum recommended pad size.
Apk
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
REV 2
TMOS
 Motorola
Motorola, Inc.
1996
Power MOSFET Transistor Device Data
1
MTB36N06V
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Typ
Max
Unit
60
—
—
61
—
—
Vdc
mV/°C
—
—
—
—
10
100
—
—
100
nAdc
2.0
—
2.6
6.0
4.0
—
Vdc
mV/°C
—
0.034
0.04
Ohm
—
—
1.25
—
1.54
1.47
gFS
5.0
7.83
—
mhos
Ciss
—
1220
1700
pF
Coss
—
337
470
Crss
—
74.8
150
td(on)
—
14
30
tr
—
138
270
td(off)
—
54
100
tf
—
91
180
QT
—
39
50
Q1
—
7
—
Q2
—
17
—
Q3
—
13
—
—
—
1.03
0.94
2.0
—
trr
—
92
—
ta
—
64
—
tb
—
28
—
QRR
—
0.332
—
—
3.5
—
—
7.5
—
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
IDSS
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
µAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 16 Adc)
RDS(on)
Drain–to–Source On–Voltage
(VGS = 10 Vdc, ID = 32 Adc)
(VGS = 10 Vdc, ID = 16 Adc, TJ = 150°C)
VDS(on)
Forward Transconductance (VDS = 7.6 Vdc, ID = 16 Adc)
Vdc
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
(VDD = 30 Vdc, ID = 32 Adc,
VGS = 10 Vdc,
RG = 9.1 Ω)
Fall Time
Gate Charge
(See Figure 8)
(VDS = 48 Vdc, ID = 32 Adc,
VGS = 10 Vdc)
ns
nC
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 32 Adc, VGS = 0 Vdc)
(IS = 32 Adc, VGS = 0 Vdc, TJ = 150°C)
Reverse Recovery Time
(IS = 32 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
Reverse Recovery Stored Charge
VSD
Vdc
ns
µC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25″ from package to center of die)
LD
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
LS
nH
nH
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
2
Motorola TMOS Power MOSFET Transistor Device Data
MTB36N06V
TYPICAL ELECTRICAL CHARACTERISTICS
72
TJ = 100°C
VDS ≥ 10 V
7V
9V
I D , DRAIN CURRENT (AMPS)
I D , DRAIN CURRENT (AMPS)
72
VGS = 10 V
TJ = 25°C
54
8V
6V
36
5V
18
25°C
54
36
18
–55°C
4V
0
0.1
1
2
3
0
4
1
2
4
3
7
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
8
9
0.052
0.08
TJ = 100°C
25°C
0.04
TJ = 25°C
0.044
0.06
VGS = 10 V
0.036
– 55°C
0.02
0
0
18
36
54
ID, DRAIN CURRENT (AMPS)
72
0.028
15 V
0
Figure 3. On–Resistance versus Drain Current
and Temperature
18
36
54
ID, DRAIN CURRENT (AMPS)
72
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
1.8
1000
VGS = 0 V
VGS = 10 V
ID = 16 A
TJ = 125°C
I DSS , LEAKAGE (nA)
R DS(on) , DRAIN–TO–SOURCE RESISTANCE
(NORMALIZED)
6
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
VGS = 10 V
1.6
5
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
RDS(on) , DRAIN–TO–SOURCE RESISTANCE (OHMS)
RDS(on) , DRAIN–TO–SOURCE RESISTANCE (OHMS)
0
1.4
1.2
1
100
100°C
10
25°C
0.8
0.6
– 50
1
– 25
0
25
50
75
100
125
TJ, JUNCTION TEMPERATURE (°C)
150
175
Figure 5. On–Resistance Variation with
Temperature
Motorola TMOS Power MOSFET Transistor Device Data
0
30
10
20
40
50
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
60
Figure 6. Drain–To–Source Leakage
Current versus Voltage
3
MTB36N06V
POWER MOSFET SWITCHING
Switching behavior is most easily modeled and predicted
by recognizing that the power MOSFET is charge controlled.
The lengths of various switching intervals (∆t) are determined
by how fast the FET input capacitance can be charged by
current from the generator.
The capacitance (Ciss) is read from the capacitance curve at
a voltage corresponding to the off–state condition when calculating td(on) and is read at a voltage corresponding to the
on–state when calculating td(off).
The published capacitance data is difficult to use for calculating rise and fall because drain–gate capacitance varies
greatly with applied voltage. Accordingly, gate charge data is
used. In most cases, a satisfactory estimate of average input
current (IG(AV)) can be made from a rudimentary analysis of
the drive circuit so that
At high switching speeds, parasitic circuit elements
complicate the analysis. The inductance of the MOSFET
source lead, inside the package and in the circuit wiring
which is common to both the drain and gate current paths,
produces a voltage at the source which reduces the gate
drive current. The voltage is determined by Ldi/dt, but since
di/dt is a function of drain current, the mathematical solution
is complex. The MOSFET output capacitance also complicates the mathematics. And finally, MOSFETs have finite
internal gate resistance which effectively adds to the
resistance of the driving source, but the internal resistance is
difficult to measure and, consequently, is not specified.
The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching performance is
affected by the parasitic circuit elements. If the parasitics
were not present, the slope of the curves would maintain a
value of unity regardless of the switching speed. The circuit
used to obtain the data is constructed to minimize common
inductance in the drain and gate circuit loops and is believed
readily achievable with board mounted components. Most
power electronic loads are inductive; the data in the figure is
taken with a resistive load, which approximates an optimally
snubbed inductive load. Power MOSFETs may be safely
operated into an inductive load; however, snubbing reduces
switching losses.
t = Q/IG(AV)
During the rise and fall time interval when switching a resistive load, VGS remains virtually constant at a level known as
the plateau voltage, VSGP. Therefore, rise and fall times may
be approximated by the following:
tr = Q2 x RG/(VGG – VGSP)
tf = Q2 x RG/VGSP
where
VGG = the gate drive voltage, which varies from zero to VGG
RG = the gate drive resistance
and Q2 and VGSP are read from the gate charge curve.
During the turn–on and turn–off delay times, gate current is
not constant. The simplest calculation uses appropriate values from the capacitance curves in a standard equation for
voltage change in an RC network. The equations are:
td(on) = RG Ciss In [VGG/(VGG – VGSP)]
td(off) = RG Ciss In (VGG/VGSP)
4000
C, CAPACITANCE (pF)
VDS = 0 V
3000
VGS = 0 V
TJ = 25°C
Ciss
2000
Ciss
Crss
1000
Coss
Crss
0
10
5
5
0
VGS
10
15
20
25
VDS
GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
4
Motorola TMOS Power MOSFET Transistor Device Data
30
QT
25
10
VGS
8
20
Q2
Q1
6
15
4
Q3
2
0
10
TJ = 25°C
ID = 32 A
5
VDS
0
5
10
15
20
25
30
35
40
0
1000
TJ = 25°C
ID = 32 A
VDD = 30 V
VGS = 10 V
t, TIME (ns)
12
VDS , DRAIN–TO–SOURCE VOLTAGE (VOLTS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
MTB36N06V
tr
tf
100
td(off)
td(on)
10
1
1
10
QT, TOTAL CHARGE (nC)
RG, GATE RESISTANCE (OHMS)
Figure 8. Gate–To–Source and Drain–To–Source
Voltage versus Total Charge
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
100
DRAIN–TO–SOURCE DIODE CHARACTERISTICS
32
I S , SOURCE CURRENT (AMPS)
TJ = 25°C
VGS = 0 V
24
16
8
0
0.5 0.55
0.6 0.65
0.7 0.75
0.8 0.85 0.9
0.95
1
1.05
VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus Current
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define
the maximum simultaneous drain–to–source voltage and
drain current that a transistor can handle safely when it is
forward biased. Curves are based upon maximum peak
junction temperature and a case temperature (TC) of 25°C.
Peak repetitive pulsed power limits are determined by using
the thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal Resistance–General
Data and Its Use.”
Switching between the off–state and the on–state may
traverse any load line provided neither rated peak current
(IDM) nor rated voltage (VDSS) is exceeded and the transition
time (tr,tf) do not exceed 10 µs. In addition the total power
averaged over a complete switching cycle must not exceed
(TJ(MAX) – TC)/(RθJC).
A Power MOSFET designated E–FET can be safely used
in switching circuits with unclamped inductive loads. For
Motorola TMOS Power MOSFET Transistor Device Data
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and adjusted for operating conditions
differing from those specified. Although industry practice is to
rate in terms of energy, avalanche energy capability is not a
constant. The energy rating decreases non–linearly with an
increase of peak current in avalanche and peak junction
temperature.
Although many E–FETs can withstand the stress of
drain–to–source avalanche at currents up to rated pulsed
current (I DM ), the energy rating is specified at rated
continuous current (ID), in accordance with industry custom.
The energy rating must be derated for temperature as shown
in the accompanying graph (Figure 12). Maximum energy at
currents below rated continuous ID can safely be assumed to
equal the values indicated.
5
MTB36N06V
SAFE OPERATING AREA
225
VGS = 20 V
SINGLE PULSE
TC = 25°C
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
EAS, SINGLE PULSE DRAIN–TO–SOURCE
AVALANCHE ENERGY (mJ)
I D , DRAIN CURRENT (AMPS)
1000
100
10 µs
100 µs
10
1 ms
10 ms
dc
1
1
0.1
10
ID = 32 A
200
175
150
125
100
75
50
25
0
100
25
50
75
100
125
150
175
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
1.00
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
D = 0.5
0.2
0.1
P(pk)
0.10 0.05
0.02
t1
0.01
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.01
1.0E–05
1.0E–04
1.0E–03
1.0E–02
1.0E–01
RθJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) RθJC(t)
1.0E+00
1.0E+01
t, TIME (s)
Figure 13. Thermal Response
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
Figure 14. Diode Reverse Recovery Waveform
6
PD, POWER DISSIPATION (WATTS)
3
RθJA = 50°C/W
Board material = 0.065 mil FR–4
Mounted on the minimum recommended footprint
Collector/Drain Pad Size ≈ 450 mils x 350 mils
2.5
2.0
1.5
1
0.5
0
25
50
75
100
125
150
175
TA, AMBIENT TEMPERATURE (°C)
Figure 15. D2PAK Power Derating Curve
Motorola TMOS Power MOSFET Transistor Device Data
MTB36N06V
INFORMATION FOR USING THE D2PAK SURFACE MOUNT PACKAGE
RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must be
the correct size to ensure proper solder connection interface
between the board and the package. With the correct pad
geometry, the packages will self align when subjected to a
solder reflow process.
0.33
8.38
0.08
2.032
0.42
10.66
0.24
6.096
0.04
1.016
0.12
3.05
0.63
17.02
inches
mm
POWER DISSIPATION FOR A SURFACE MOUNT DEVICE
PD =
TJ(max) – TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature TA of 25°C, one can
calculate the power dissipation of the device. For a D2PAK
device, PD is calculated as follows.
PD = 175°C – 25°C = 3.0 Watts
50°C/W
The 50°C/W for the D2PAK package assumes the use of the
recommended footprint on a glass epoxy printed circuit board
to achieve a power dissipation of 3.0 Watts. There are other
alternatives to achieving higher power dissipation from the
surface mount packages. One is to increase the area of the
drain pad. By increasing the area of the drain pad, the power
Motorola TMOS Power MOSFET Transistor Device Data
dissipation can be increased. Although one can almost double
the power dissipation with this method, one will be giving up
area on the printed circuit board which can defeat the purpose
of using surface mount technology. For example, a graph of
RθJA versus drain pad area is shown in Figure 16.
RθJA , THERMAL RESISTANCE, JUNCTION
TO AMBIENT (°C/W)
The power dissipation for a surface mount device is a
function of the drain pad size. These can vary from the
minimum pad size for soldering to a pad size given for
maximum power dissipation. Power dissipation for a surface
mount device is determined by TJ(max), the maximum rated
junction temperature of the die, RθJA, the thermal resistance
from the device junction to ambient, and the operating
temperature, TA. Using the values provided on the data sheet,
PD can be calculated as follows:
70
Board Material = 0.0625″
G–10/FR–4, 2 oz Copper
60
TA = 25°C
2.5 Watts
50
3.5 Watts
40
5 Watts
30
20
0
2
4
6
8
10
A, AREA (SQUARE INCHES)
12
14
16
Figure 16. Thermal Resistance versus Drain Pad
Area for the D2PAK Package (Typical)
Another alternative would be to use a ceramic substrate or
an aluminum core board such as Thermal Clad. Using a
board material such as Thermal Clad, an aluminum core
board, the power dissipation can be doubled using the same
footprint.
7
MTB36N06V
SOLDER STENCIL GUIDELINES
Prior to placing surface mount components onto a printed
circuit board, solder paste must be applied to the pads. Solder
stencils are used to screen the optimum amount. These
stencils are typically 0.008 inches thick and may be made of
brass or stainless steel. For packages such as the SC–59,
SC–70/SOT–323, SOD–123, SOT–23, SOT–143, SOT–223,
SO–8, SO–14, SO–16, and SMB/SMC diode packages, the
stencil opening should be the same as the pad size or a 1:1
registration. This is not the case with the DPAK and D2PAK
packages. If one uses a 1:1 opening to screen solder onto the
drain pad, misalignment and/or “tombstoning” may occur due
to an excess of solder. For these two packages, the opening
in the stencil for the paste should be approximately 50% of the
tab area. The opening for the leads is still a 1:1 registration.
Figure 17 shows a typical stencil for the DPAK and D2PAK
packages. The pattern of the opening in the stencil for the
drain pad is not critical as long as it allows approximately 50%
of the pad to be covered with paste.
ÇÇÇÇÇÇÇÇ
ÇÇÇÇÇÇÇÇ
ÇÇÇÇÇÇÇÇ
ÇÇÇÇÇÇÇÇ
ÇÇÇÇÇÇÇÇ
ÇÇÇÇÇÇÇÇ
ÇÇÇÇÇÇÇÇ
ÇÇ
ÇÇ
ÇÇ
ÇÇ
SOLDER PASTE
OPENINGS
STENCIL
Figure 17. Typical Stencil for DPAK and
D2PAK Packages
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and soldering
should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10°C.
• The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
8
• When shifting from preheating to soldering, the maximum
temperature gradient shall be 5°C or less.
• After soldering has been completed, the device should be
allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied during
cooling.
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
* Due to shadowing and the inability to set the wave height to
incorporate other surface mount components, the D2PAK is
not recommended for wave soldering.
Motorola TMOS Power MOSFET Transistor Device Data
MTB36N06V
TYPICAL SOLDER HEATING PROFILE
For any given circuit board, there will be a group of control
settings that will give the desired heat pattern. The operator
must set temperatures for several heating zones, and a figure
for belt speed. Taken together, these control settings make up
a heating “profile” for that particular circuit board. On
machines controlled by a computer, the computer remembers
these profiles from one operating session to the next. Figure
18 shows a typical heating profile for use when soldering a
surface mount device to a printed circuit board. This profile will
vary among soldering systems but it is a good starting point.
Factors that can affect the profile include the type of soldering
system in use, density and types of components on the board,
type of solder used, and the type of board or substrate material
being used. This profile shows temperature versus time. The
STEP 1
PREHEAT
ZONE 1
“RAMP”
200°C
STEP 2
STEP 3
VENT
HEATING
“SOAK” ZONES 2 & 5
“RAMP”
DESIRED CURVE FOR HIGH
MASS ASSEMBLIES
line on the graph shows the actual temperature that might be
experienced on the surface of a test board at or near a central
solder joint. The two profiles are based on a high density and
a low density board. The Vitronics SMD310 convection/infrared reflow soldering system was used to generate this
profile. The type of solder used was 62/36/2 Tin Lead Silver
with a melting point between 177 –189°C. When this type of
furnace is used for solder reflow work, the circuit boards and
solder joints tend to heat first. The components on the board
are then heated by conduction. The circuit board, because it
has a large surface area, absorbs the thermal energy more
efficiently, then distributes this energy to the components.
Because of this effect, the main body of a component may be
up to 30 degrees cooler than the adjacent solder joints.
STEP 4
STEP 5
HEATING
HEATING
ZONES 3 & 6 ZONES 4 & 7
“SOAK”
“SPIKE”
STEP 6
VENT
STEP 7
COOLING
205° TO 219°C
PEAK AT
SOLDER JOINT
170°C
160°C
150°C
150°C
100°C
140°C
100°C
SOLDER IS LIQUID FOR
40 TO 80 SECONDS
(DEPENDING ON
MASS OF ASSEMBLY)
DESIRED CURVE FOR LOW
MASS ASSEMBLIES
50°C
TIME (3 TO 7 MINUTES TOTAL)
TMAX
Figure 18. Typical Solder Heating Profile
Motorola TMOS Power MOSFET Transistor Device Data
9
MTB36N06V
PACKAGE DIMENSIONS
C
E
V
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
4
STYLE 2:
PIN 1.
2.
3.
4.
A
1
2
3
S
–T–
SEATING
PLANE
K
J
G
D 3 PL
0.13 (0.005)
H
M
GATE
DRAIN
SOURCE
DRAIN
DIM
A
B
C
D
E
G
H
J
K
S
V
INCHES
MIN
MAX
0.340
0.380
0.380
0.405
0.160
0.190
0.020
0.035
0.045
0.055
0.100 BSC
0.080
0.110
0.018
0.025
0.090
0.110
0.575
0.625
0.045
0.055
MILLIMETERS
MIN
MAX
8.64
9.65
9.65
10.29
4.06
4.83
0.51
0.89
1.14
1.40
2.54 BSC
2.03
2.79
0.46
0.64
2.29
2.79
14.60
15.88
1.14
1.40
T
CASE 418B–02
ISSUE B
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
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associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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10
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*MTB36N06V/D*
Motorola TMOS Power MOSFET Transistor
Device Data
MTB36N06V/D