AOD496A N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD496A uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. VDS (V) =30V ID = 57A (VGS = 10V) RDS(ON) < 9mΩ (VGS = 10V) RDS(ON) < 14mΩ (VGS = 4.5V) - RoHS Compliant - Halogen Free 100% UIS Tested! 100% R g Tested! TO-252 D-PAK Top View D Bottom View D G G S S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C Continuous Drain Current Pulsed Drain Current C V A 100 11 IDSM TA=70°C ±20 40 IDM TA=25°C Continuous Drain Current Units V 57 ID TC=100°C Maximum 30 A 9 Avalanche Current C IAR 20 A Repetitive avalanche energy L=0.1mH C EAR 20 mJ TC=25°C Power Dissipation B TC=100°C TA=25°C Power Dissipation A Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. 2.3 W 1.5 TJ, TSTG -55 to 175 Symbol t ≤ 10s Steady-State Steady-State W 25 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 50 PD RθJA RθJC Typ 18 44 2.4 °C Max 22 55 3 Units °C/W °C/W °C/W www.aosmd.com AOD496A Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V VDS=30V, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) ID(ON) Gate Threshold Voltage VDS=VGS ID=250µA 1.2 On state drain current VGS=10V, VDS=5V 100 RDS(ON) Static Drain-Source On-Resistance TJ=55°C 5 VGS=10V, ID=20A Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time A VGS=4.5V, ID=20A 11 14 VDS=5V, ID=20A 43 DYNAMIC PARAMETERS Ciss Input Capacitance Rg V 9 Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current Reverse Transfer Capacitance 2.2 13 Forward Transconductance Output Capacitance nA 11 VSD Crss 1.7 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=20A µA ±100 7.4 TJ=125°C gFS Units V 1 Zero Gate Voltage Drain Current Coss Max 30 IDSS IS Typ 0.7 mΩ mΩ S 1 V 50 A 600 750 980 pF 200 245 365 pF 40 70 100 pF 0.4 0.8 1.4 Ω 9 11.5 14 nC 4 5 6 nC 1.6 2 2.4 nC 1.5 2.5 3.5 nC 5 VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω ns 3 ns 18 ns 3 ns trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 9 11 13 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 18 23 28 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. Rev 1 : Feb-08 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD496A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 60 10V 6V 4.5V 7V 40 60 4V 40 ID(A) ID (A) VDS=5V 50 80 20 3.5 20 30 0 0 0 1 2 3 4 0 5 16 2 3 4 5 2 Normalized On-Resistance 14 RDS(ON) (mΩ) 1 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=4.5V 12 10 8 VGS=10V 6 4 1.8 VGS=10V ID=20A 1.6 17 5 2 VGS=4.5V 10 1.4 1.2 ID=20A 1 0.8 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 50 75 100 125 150 175 200 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18 Temperature (Note E) 1.0E+02 30 ID=20A 1.0E+01 25 40 1.0E+00 20 IS (A) RDS(ON) (mΩ) 25°C 125°C 10 VGS=3V 125°C 15 1.0E-01 1.0E-02 125°C 25°C 1.0E-03 1.0E-04 10 1.0E-05 25°C 5 2 4 6 0.0 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Alpha & Omega Semiconductor, Ltd. 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.aosmd.com AOD496A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1200 10 VDS=15V ID=20A 1000 Ciss Capacitance (pF) VGS (Volts) 8 6 4 2 400 Coss Crss 0 0 2 4 6 8 10 Qg (nC) Figure 7: Gate-Charge Characteristics 0 12 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 200 1000.0 10µs 100.0 RDS(ON) limited 10.0 160 100µs 1ms 10ms DC 1.0 TJ(Max)=175°C TC=25°C 0.1 0.0 0.01 1 17 5 2 10 120 80 40 0.1 1 VDS (Volts) 10 100 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 0 0.0001 0.001 0.01 1 0 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=3°C/W PD 0.1 Ton 0.01 0.00001 0.1 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 TJ(Max)=175°C TC=25°C 10µs Power (W) ID (Amps) 600 200 0 ZθJC Normalized Transient Thermal Resistance 800 Single Pulse 0.0001 0.001 0.01 0.1 T 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD496A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 TA=25°C 80 TA=150°C 60 Power Dissipation (W) IAR(A) Peak Avalanche Current 100 TA=100°C 40 TA=125°C 20 50 40 30 20 10 0 0 0.000001 0 0.00001 0.0001 0.001 Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability (Note C) 25 50 75 100 125 175 10000 40 35 TA=25°C 1000 30 25 Power (W) Current rating ID(A) 150 TCASE (°C) Figure 13: Power De-rating (Note F) 20 15 17 5 2 10 100 10 10 5 1 0 0 25 50 75 100 125 150 0 175 ZθJA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 0 0 0.01 0.1 1 10 100 1000 0 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) TCASE (°C) Figure 14: Current De-rating (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=55°C/W 0.1 PD 0.01 0.001 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 Ton 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD496A Gate Charge Test Circuit & W aveform Vgs Qg 10V + VDC + Vds - VDC DUT Qgs Qgd - Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds Vgs Rg 90% + Vdd DUT VDC - 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs VDC Rg - I AR Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Isd L Vgs Ig Alpha & Omega Semiconductor, Ltd. + Vdd VDC - IF t rr dI/dt I RM Vds Vdd www.aosmd.com