MSE1PB, MSE1PD, MSE1PG, MSE1PJ www.vishay.com Vishay General Semiconductor Surface Mount ESD Capability Rectifier FEATURES • • • • ® eSMP Series • • Top View Bottom View • • MicroSMP Very low profile - typical height of 0.65 mm Available Ideal for automated placement Oxide planar chip junction Low forward voltage drop, low leakage current ESD capability Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C AEC-Q101 qualified Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 100 V, 200 V, 400 V, 600 V IFSM 20 A VF at IF = 1.0 A 0.925 V IR 1 μA TJ max. 175 °C Package MicroSMP Diode variations Single die Case: MicroSMP Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS-compliant, and automotive grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes the cathode end TYPICAL APPLICATIONS General purpose, polarity protection, and rail-to-rail protection in both consumer and automotive applications. MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Device marking code MSE1PB MSE1PD MSE1PG MSE1PJ SB SD SG SJ 100 200 400 600 UNIT Max. repetitive peak reverse voltage VRRM Max. average forward rectified current (fig. 1) IF(AV) 1.0 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 20 A TJ, TSTG - 55 to + 175 °C Operating junction and storage temperature range V ELECTRICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) PARAMETER TEST CONDITIONS IF = 0.5 A Max. instantaneous forward voltage IF = 1.0 A IF = 0.5 A IF = 1.0 A SYMBOL TA = 25 °C VF (1) TA = 125 °C TA = 25 °C IR (2) TYP. MAX. 0.940 - 1.016 1.1 0.834 - 0.925 0.98 - 1.0 3.7 50 UNIT V μA Max. reverse current Rated VR Typical reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 780 - ns Typical junction capacitance 4.0 V, 1 MHz CJ 5 - pF TA = 125 °C Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms Revision: 14-Aug-13 Document Number: 89067 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MSE1PB, MSE1PD, MSE1PG, MSE1PJ www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance MSE1PB MSE1PD MSE1PG RJA (1) 110 RJL (1) 30 RJC (1) 40 MSE1PJ UNIT °C/W Note (1) Thermal resistance from junction to ambient and junction to lead mounted on PCB with 6.0 mm x 6.0 mm copper pad areas. R JL is measured at the terminal of cathode band. IMMUNITY TO ELECTRICAL STATIC DISCHARGE TO THE FOLLOWING STANDARDS (TA = 25 °C, unless otherwise noted) STANDARD TEST TYPE TEST CONDITIONS SYMBOL CLASS VALUE AEC-Q101-001 Human body model (contact mode) C = 100 pF, R = 1.5 k H3B > 8 kV AEC-Q101-002 Machine model (contact mode) C = 200 pF, R = 0 M4 > 400 V JESD22-A114 Human body model (contact mode) C = 100 pF, R = 1.5 k 3B > 8 kV JESD22-A115 Machine model (contact mode) C = 200 pF, R = 0 C > 400 V Human body model (contact mode) C = 150 pF, R = 330 4 > 8 kV Human body model (air-discharge mode) (1) C = 150 pF, R = 330 4 > 15 kV IEC 61000-4-2 (2) VC Notes (1) Immunity to IEC 61000-4-2 air discharge mode has a typical performance > 30 kV (2) System ESD standard ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE MSE1PJ-M3/89A 0.006 89A 4500 7" diameter plastic tape and reel MSE1PJHM3/89A (1) 0.006 89A 4500 7" diameter plastic tape and reel Note (1) Automotive grade 1.2 1.2 1.0 1.0 D = 0.8 Average Power Loss (W) Average Forward Rectified Current (A) RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 0.8 0.6 0.4 TL Measured at the Cathode Band Terminal 0.2 D = 0.5 0.8 D = 0.3 D = 1.0 D = 0.2 0.6 D = 0.1 T 0.4 0.2 0 D = tp/T tp 0.8 1.0 0 95 105 115 125 135 145 155 165 175 0 0.2 0.4 0.6 1.2 Lead Temperature (°C) Average Forward Current (A) Fig. 1 - Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Revision: 14-Aug-13 Document Number: 89067 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MSE1PB, MSE1PD, MSE1PG, MSE1PJ www.vishay.com Vishay General Semiconductor 10 Junction Capacitance (pF) Instantaneous Forward Current (A) 10 TJ = 175 °C 1 TJ = 25 °C TJ = 50 °C TJ = 150 °C TJ = 75 °C 0.1 TJ = 100 °C TJ = 125 °C 1 0.01 0 0.4 0.8 1.2 1.6 2.0 2.4 0.1 10 100 Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Typical Junction Capacitance 1000 Transient Thermal Impedance (°C/W) 100 Instantaneous Reverse Current (μA) 1 Instantaneous Forward Voltage (V) TJ = 175 °C TJ = 150 °C 10 TJ = 125 °C TJ = 100 °C 1 TJ = 75 °C 0.1 TJ = 25 °C 0.01 20 30 40 50 60 70 80 90 100 10 1 0.01 0.001 10 Junction to Ambient 100 0.1 1 10 100 1000 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Leakage Characteristics Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) MicroSMP 0.059 (1.50) 0.043 (1.10) Cathode Band 0.055 (1.40) 0.047 (1.20) 0.030 (0.75) 0.022 (0.55) 0.039 (0.98) 0.031 (0.78) 0.091 (2.30) 0.083 (2.10) 0.106 (2.70) 0.091 (2.30) 0.030 (0.75) 0.022 (0.55) Mounting Pad Layout 0.079 (2.00) 0.029 (0.73) 0.025 (0.63) 0.043 (1.10) 0.011 (0.27) 0.005 (0.12) Revision: 14-Aug-13 0.032 (0.80) 0.032 (0.80) 0.020 (0.50) Document Number: 89067 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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