CEL NE5520379A Necs 3.2v, 3w, l/s band medium power silicon ld-mosfet Datasheet

NEC'S 3.2 V, 3 W, L/S BAND
NE5520379A
MEDIUM POWER SILICON LD-MOSFET
FEATURES
OUTLINE DIMENSIONS (Units in mm)
• LOW COST PLASTIC SURFACE MOUNT PACKAGE
PACKAGE OUTLINE 79A
• HIGH OUTPUT POWER: +35.5 dBm TYP
(Bottom View)
Gate
1.2 MAX.
Drain
1.0 MAX.
4.4 MAX.
Drain
0.8±0.15
9Z001
• CLASS AB OPERATION
0.6±0.15
5.7 MAX.
Gate
• SINGLE SUPPLY: 2.8 to 6.0 V
Source
A
• HIGH POWER ADDED EFFICIENCY: 65% TYP @
VDS = 3.2 V, f = 915 MHz
1.5±0.2
Source
3
• HIGH LINEAR GAIN: 16 dB TYP @ 915 MHz
4.2 MAX.
• SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX
0.4±0.15
DESCRIPTION
• DIGITAL CELLULAR PHONES:
3.2 V GSM900/DCS 1800 Dual Band Handsets
• OTHERS:
Two-Way Pagers
Retail Business Radio
Special Mobile Radio
Short Range Wireless
PART NUMBER
NE5520379A
PACKAGE OUTLINE
Functional
Characteristics
POUT
MIN
TYP
dBm
35.5
Linear Gain (at PIN = +10 dBm)
dB
16.0
ηD
Drain Efficiency
%
68
ηADD
Power Added Efficiency
%
65
ID
Operating Drain Current
A
1.0
Output Power
dBm
31.0
Linear Gain (at PIN = +10 dBm)
dB
8.5
ID
Operating Drain Current
mA
750
TEST CONDITIONS
f = 915 MHz, VDS = 3.2 V,
VGS = 2.5 V(RF OFF)
(NOTE 1)
f = 1785 MHz, VDS = 3.2 V,
VGS = 2.5 V
(NOTE 1)
Drain Efficiency
%
ηADD
Power Added Efficiency
%
IGSS
Gate-to-Source Leakage Current
nA
100
IDSS
Drain-to-Source Leakage Current
nA
100
VDS = 8.5 V
VTH
Gate Threshold Voltage
V
2.0
VDS = 3.5 V, IDS = 1 mA
gm
BVDSS
RTH
Transconductance
S
Drain-to-Source Breakdown Voltage
V
Thermal Resistance
°C/W
29
MAX
33.0
GL
ηD
Electrical DC
Characteristics
79A
UNITS
GL
POUT
Output Power
0.2±0.1
APPLICATIONS
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
3.6±0.2
0.9±0.2
NEC's NE5520379A is an N-Channel silicon power MOSFET
specially designed as the transmission power amplifier for
3.2 V GSM900 handsets. Die are manufactured using NEC's
NEWMOS technology (NEC's 0.6 μm WSi gate lateral MOSFET) and housed in a surface mount package. This device
can deliver 35.5 dBm output power at 915 MHz and 3.2 V, or
34.6 dBm output power at 2.8 V by varying the gate voltage
as a power control function.
SYMBOLS
0.8 MAX.
5.7 MAX.
38
35
1.0
15
1.35
VGS = 6.0 V
2.5
VDS = 3.5 V, IDS1 = 0.8 A, IDS2 = 1.0 A
20
IDSS = 10 µA
5
Channel-to-Case
Note:
1. DC performance is tested 100%. Several samples per wafer are tested for RF performance. Wafer rejection criteria for standard devices is 1
reject for several samples.
California Eastern Laboratories
NE5520379A
ABSOLUTE MAXIMUM RATINGS1 (TA = 25 °C)
RECOMMENDED OPERATING LIMITS
SYMBOLS
SYMBOLS
PARAMETERS
UNITS
RATINGS
PARAMETERS
UNITS
TYP
MAX
VDS
Drain to Source Voltage
V
15.0
VDS
Drain to Source Voltage
V
3.2
6.0
VGS
Gate to Source Voltage
V
5.0
VGS
Gate to Source Voltage
V
2.5
3.5
A
1.5
IDS
Drain Current (Pulse Test)
A
1.75
2.0
PIN
Input Power
dBm
25
26
ID
Drain Current
ID
Drain Current (Pulse Test)
A
3.0
PT
Total Power Dissipation
W
20
TCH
Channel Temperature
°C
125
TSTG
Storage Temperature
°C
-65 to +125
2
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Duty Cycle ≤ 50%, Ton ≤ 1 s.
ORDERING INFORMATION
PART NUMBER
QTY
NE5520379A-T1A-A
TYPICAL PERFORMANCE CURVES
(TA = 25°C)
QUIESCENT DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
10 000
4.0
3.4 V
3.2 V
Quiescent Drain Current, ID (A)
3.6 V
Drain Current, ID (A)
3.5
3.0 V
3.0
2.5
2.8 V
2.0
2.6 V
1.5
2.4 V
1.0
2.2 V
0.5
VDS = 3.2 V
1 000
100
10
2.0 V
0
1
2
3
4
5
6
7
8
9
Drain to Source Voltage, VDS (V)
10
1
1.0
1.5
2.0
2.5
Gate to Source Voltage, VGS (V)
3.0
NE5520379A
TYPICAL PERFORMANCE CURVES
(TA = 25°C)
DRAIN EFFICIENCY, POWER ADDED
EFFICIENCY vs. INPUT POWER
OUTPUT POWER, DRAIN CURRENT
vs. INPUT POWER (460 MHz)
2000
1500
30
ID
25
1000
20
500
40
5
10
15
0
25
ηadd
50
0
0
2 500
Pout
2 000
25
1 000
20
500
10
15
20
25
30
100
0
35
f = 915 MHz
ηd
η add
50
0
5
10
1 500
20
1 000
ID
500
15
15
20
25
Input Power, Pin (dBm)
30
0
35
Drain Efficiency ,ηd (%)
Powwer Added Efficiency, ηadd (%)
2 000
Drain Current, ID (mA)
Output Power, Pout (dBm)
100
Pout
25
10
15
20
25
30
35
Input Power, Pin (dBm)
2 500
VDS = 3.2 V
IDSQ = 600 mA
f = 1 785 MHz
5
25
IDSQ = 600 mA
OUTPUT POWER, DRAIN CURRENT
vs. INPUT POWER
10
20
VDS = 3.2 V
Input Power, Pin (dBm)
30
15
DRAIN EFFICIENCY, POWER ADDED
EFFICIENCY vs. INPUT POWER
ID
35
10
5
OUTPUT POWER, DRAIN CURRENT
vs. INPUT POWER
1 500
5
ηd
Input Power, Pin (dBm)
30
15
VDS = 3.6 V
IDset = 150 mA
f = 460 MHz
Input Power, Pin (dBm)
VDS = 3.2 V
IDSQ = 600 mA
f = 915 MHz
35
20
Drain Efficiency ,ηd (%)
Powwer Added Efficiency, ηadd (%)
0
Drain Efficiency ,ηd (%)
Powwer Added Efficiency, ηadd (%)
Pout
100
Drain Current, ID (mA)
35
15
Output Power, Pout (dBm)
2500
VDS = 3.6 V
IDset = 150 mA
f = 460 MHz
Drain Current, ID (mA)
Output Power, Pout (dBm)
40
DRAIN EFFICIENCY, POWER ADDED
EFFICIENCY vs. INPUT POWER
VDS = 3.2 V
IDSQ = 600 mA
f = 1 785 MHz
50
ηd
η add
0
5
10
15
20
25
Input Power, Pin (dBm)
30
35
NE5520379A
TYPICAL PERFORMANCE CURVES
(TA = 25°C)
OUTPUT POWER, DRAIN CURRENT
vs. GATE TO SOURCE VOLTAGE
35
2 500
2 000
1 500
ID
33
1 000
32
500
1.0
2.0
3.0
Gate to Source Voltage, VGS (V)
0
4.0
31
2 500
VDS = 3.2 V
f = 1 785 MHz
Pin = 25 dBm
34
31
0.0
33
Pout
Pin = 25 dBm
Pout
2 000
29
1 500
27
1 000
ID
25
23
0.0
1.0
500
2.0
3.0
Gate to Source Voltage, VGS (V)
0
4.0
Drain Current, ID (mA)
Output Power, Pout (dBm)
f = 915 MHz
Output Power, Pout (dBm)
VDS = 3.2 V
Drain Current, ID (mA)
36
OUTPUT POWER, DRAIN CURRENT
vs. GATE TO SOURCE VOLTAGE
NE5520379A
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
Note: This file and many other s-parameter files can be downloaded from www.cel.com
j50
60˚
150˚
j10
0
90˚
120˚
j100
j25
10
50
25
100
180˚
0
-j10
Coordinates in Ohms
Frequency in GHz
VD = 2.4 V, ID = 300 mA
-j100
-j25
30˚
-j50
0˚
-150˚
-30˚
-120˚
-90˚
-60˚
NE5520379A
VD = 2.4 V, ID = 300 mA
FREQUENCY
GHz
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
0.50
0.55
0.60
0.65
0.70
0.75
0.80
0.85
0.90
0.95
1.00
1.20
1.30
1.40
1.50
1.60
1.70
1.80
1.90
2.00
2.10
2.20
2.30
2.40
2.50
2.60
2.70
2.80
2.90
3.00
3.10
3.20
3.30
3.40
3.50
4.00
S11
MAG
0.91
0.91
0.91
0.91
0.92
0.92
0.92
0.92
0.92
0.92
0.92
0.93
0.93
0.93
0.93
0.93
0.93
0.94
0.94
0.94
0.95
0.95
0.95
0.95
0.95
0.96
0.96
0.96
0.96
0.96
0.96
0.96
0.97
0.97
0.97
0.97
0.97
0.97
0.97
0.98
0.98
0.98
0.98
0.99
S21
ANG
-166.00
-171.34
-174.19
-176.05
-177.47
-178.62
-179.56
179.62
178.83
178.12
177.42
176.76
176.09
175.48
174.86
174.22
173.60
173.03
172.43
170.05
168.90
167.71
166.62
165.46
164.33
163.28
162.22
161.21
160.17
159.17
158.29
157.41
156.53
155.72
154.92
154.17
153.44
152.77
152.20
151.52
150.94
150.36
149.78
148.45
MAG
4.96
3.32
2.48
1.98
1.63
1.39
1.20
1.06
0.94
0.85
0.77
0.70
0.64
0.59
0.54
0.50
0.47
0.44
0.41
0.32
0.28
0.25
0.23
0.21
0.19
0.17
0.16
0.14
0.13
0.12
0.11
0.11
0.10
0.09
0.09
0.08
0.08
0.07
0.07
0.06
0.06
0.06
0.05
0.04
S12
ANG
91.46
86.63
82.34
78.94
75.61
72.51
69.74
66.85
64.15
61.50
58.92
56.40
53.87
51.57
49.32
46.99
44.90
42.72
40.69
33.12
29.64
26.30
23.15
20.23
17.61
15.02
12.55
10.37
8.42
6.46
4.59
3.14
1.92
0.69
-0.82
-2.13
-3.31
-4.03
-4.64
-5.69
-5.93
-6.52
-6.88
-5.44
MAG
0.02
0.02
0.02
0.02
0.02
0.02
0.02
0.02
0.02
0.02
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.00
0.00
0.00
0.00
0.00
0.00
0.00
0.00
0.00
0.00
0.00
0.00
0.00
0.00
0.00
0.01
0.01
0.01
S22
ANG
2.83
-3.69
-4.78
-7.98
-9.01
-11.04
-14.40
-16.23
-18.73
-20.26
-19.69
-22.40
-24.70
-26.30
-27.01
-28.40
-29.48
-31.03
-31.65
-35.32
-38.66
-40.07
-40.31
-42.08
-41.45
-41.35
-40.16
-35.50
-30.05
-21.25
-15.26
-1.99
9.51
17.40
49.62
54.56
75.69
84.78
91.22
89.31
94.43
93.75
93.93
93.64
MAG
0.87
0.87
0.87
0.87
0.87
0.87
0.88
0.88
0.88
0.88
0.88
0.89
0.89
0.89
0.89
0.89
0.90
0.90
0.90
0.91
0.91
0.91
0.92
0.92
0.92
0.92
0.93
0.93
0.93
0.93
0.94
0.94
0.95
0.95
0.95
0.95
0.96
0.96
0.97
0.97
0.98
0.98
0.98
0.99
ANG
-177.51
-178.85
-179.72
179.68
179.13
178.64
178.26
177.80
177.43
176.97
176.61
176.14
175.63
175.27
174.81
174.31
173.93
173.42
172.99
171.08
170.17
169.12
168.10
167.21
166.35
165.39
164.37
163.55
162.80
161.93
160.98
160.15
159.57
158.86
158.02
157.17
156.56
155.94
155.48
154.37
153.79
153.16
152.45
150.04
K
MAG1
0.12
0.16
0.24
0.29
0.37
0.44
0.50
0.56
0.63
0.71
0.87
0.86
0.93
1.05
1.12
1.27
1.33
1.44
1.61
2.08
2.43
2.88
3.31
4.05
4.91
5.68
7.09
8.29
11.07
14.89
16.85
18.02
16.22
18.87
17.17
17.91
11.30
12.00
7.64
6.03
4.52
3.50
3.08
1.13
(dB)
24.77
22.87
21.67
20.65
19.83
19.13
18.71
18.21
17.79
17.43
17.25
16.77
16.44
14.89
13.95
12.74
12.17
11.53
10.79
8.96
8.10
7.18
6.55
5.86
5.12
4.38
3.84
3.46
2.90
2.19
1.67
1.65
1.49
0.98
0.60
0.80
0.89
0.68
0.86
0.83
1.47
1.69
1.43
4.11
Note:
1. Gain Calculation:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
NE5520379A
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
Note: This file and many other s-parameter files can be downloaded from www.cel.com
j50
120˚
j100
j25
25
10
50
100
-j50
NE5520379A
VD = 3.0 V, ID = 600 mA
FREQUENCY
S11
MAG
0.93
0.93
0.93
0.93
0.93
0.93
0.93
0.93
0.93
0.94
0.94
0.94
0.94
0.94
0.94
0.94
0.94
0.94
0.94
0.94
0.95
0.95
0.95
0.95
0.95
0.95
0.95
0.96
0.96
0.96
0.96
0.96
0.96
0.96
0.96
0.97
0.97
0.97
0.97
0.97
0.97
0.98
0.98
0.98
0.99
Coordinates in Ohms
Frequency in GHz
VD = 3.0 V, ID = 600 mA
-j100
-j25
S21
ANG
-166.51
-171.79
-174.68
-176.58
-178.04
-179.24
179.79
178.92
178.11
177.36
176.64
175.96
175.28
174.66
174.05
173.41
172.80
172.21
171.63
170.41
169.32
168.20
167.05
166.00
164.89
163.80
162.78
161.76
160.78
159.78
158.80
157.95
157.10
156.24
155.45
154.66
153.93
153.22
152.55
152.00
151.33
150.77
150.20
149.63
148.33
MAG
5.08
3.41
2.54
2.03
1.69
1.44
1.25
1.11
0.99
0.89
0.81
0.75
0.69
0.63
0.59
0.55
0.51
0.48
0.45
0.40
0.36
0.32
0.29
0.27
0.24
0.22
0.20
0.19
0.18
0.16
0.15
0.14
0.13
0.12
0.12
0.11
0.10
0.10
0.09
0.09
0.08
0.08
0.07
0.07
0.05
30˚
180˚
0
-j10
GHz
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
0.50
0.55
0.60
0.65
0.70
0.75
0.80
0.85
0.90
0.95
1.00
1.10
1.20
1.30
1.40
1.50
1.60
1.70
1.80
1.90
2.00
2.10
2.20
2.30
2.40
2.50
2.60
2.70
2.80
2.90
3.00
3.10
3.20
3.30
3.40
3.50
4.00
60˚
150˚
j10
0
90˚
0˚
-150˚
-30˚
-120˚
S12
ANG
92.43
88.12
84.33
81.48
78.54
75.97
73.62
71.09
68.88
66.51
64.31
62.14
59.81
57.87
55.81
53.68
51.88
49.77
47.95
44.15
40.82
37.55
34.19
30.96
28.24
25.67
22.92
20.12
17.88
16.09
14.12
12.01
10.33
9.11
7.63
5.72
3.94
2.73
1.96
1.15
-0.21
-0.76
-1.47
-2.27
-2.98
MAG
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.00
0.00
0.00
0.00
0.00
0.00
0.00
0.00
0.00
0.00
0.00
0.00
0.00
0.00
0.00
0.01
0.01
0.01
0.01
-90˚
S22
ANG
4.88
-2.92
-2.57
-2.60
-5.09
-7.10
-9.56
-11.04
-12.64
-12.76
-13.34
-14.37
-16.01
-17.13
-16.95
-18.56
-19.71
-19.61
-19.95
-24.20
-23.13
-24.29
-25.78
-25.39
-25.03
-22.37
-20.35
-18.82
-12.65
-5.72
2.28
9.59
16.52
24.13
38.01
48.37
55.62
64.87
69.74
81.95
80.85
86.32
86.22
87.98
88.38
MAG
0.89
0.89
0.89
0.89
0.89
0.89
0.89
0.89
0.89
0.90
0.89
0.90
0.90
0.90
0.90
0.90
0.90
0.90
0.90
0.91
0.91
0.91
0.91
0.92
0.92
0.92
0.92
0.92
0.93
0.93
0.93
0.93
0.94
0.95
0.94
0.94
0.95
0.96
0.96
0.96
0.97
0.97
0.98
0.97
0.98
ANG
-178.46
-179.65
179.54
178.98
178.33
177.89
177.44
176.93
176.63
176.06
175.72
175.29
174.68
174.42
173.89
173.39
173.13
172.51
172.16
171.11
170.30
169.48
168.40
167.30
166.57
165.86
164.91
163.74
162.96
162.54
161.73
160.62
159.68
159.46
158.99
158.00
156.90
156.45
156.03
155.48
154.23
153.57
153.08
152.19
149.87
-60˚
K
MAG1
0.14
0.15
0.25
0.33
0.39
0.47
0.52
0.59
0.68
0.75
0.93
0.91
1.02
1.14
1.18
1.39
1.40
1.52
1.71
1.93
2.13
2.56
3.14
3.52
4.07
4.72
6.13
7.13
7.85
9.04
11.69
12.90
11.53
10.27
11.45
10.95
10.04
7.62
7.17
6.39
5.03
3.62
3.20
3.09
1.37
(dB)
26.14
24.16
23.01
21.95
21.14
20.48
20.03
19.51
19.16
18.72
18.57
18.08
17.03
15.30
14.78
13.45
13.11
12.48
11.68
10.81
10.08
9.13
8.10
7.56
7.05
6.28
5.28
4.85
4.65
4.16
3.15
2.58
2.95
2.98
2.19
1.62
2.00
2.62
2.29
2.11
2.21
3.03
3.00
2.26
3.81
Note:
1. Gain Calculation:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
NE5520379A
APPLICATION CIRCUIT (900 MHz)
VG
1.7
C4
U1
Drain
C14
Gate
0.5
C7
RFOUT
J2
C1
1.0
R1
C6
4.0
1.2
C5
A 3
J1
C2
C8
C10
C12
C13
RFIN
79A PACKAGE
J4
5.9
GND
J3
C3
C9
C11
P1
P.C.B. LAYOUT (Units in mm)
VD
NE55XXX79A-EV
100637
Source
LEAD ON DRAIN IS LARGER
SOURCE
Note:
Use rosin or other material to prevent solder from penetrating
through-holes.
DRAIN
VGG(+2.0 V)
VDD (+3.1 V)
+ 4.7uF
0.1uF 1000pF 100pF
100pF
NE5520379A
5KΩ
10pF
RF Input
8.2pF
18pF
TF-100637
MA101J
MCR03J512
MCH185A180JK
MCH185A4R7CK
MCH185A100DK
MCH185A8R2DK
TAJB475K010R
GRM40X7R104K025BL
GRM40C0G102J050BD
NE5520379A
703401
1250-003
2052-5636-02
FD-100637
C2, C3
R1
C4, C7
C14
C1, C5
C6
C12, C13
C10, C11
C8, C9
U1
P1
J3, J4
J1, J2
PCB
+
1000pF 0.1uF 4.7uF
10pF
4.7pF
18pF
NE5520379A PARTS LIST
1
4
2
1
2
1
2
1
2
2
2
1
1
1
2
1
0.5
6.1
A 3
GATE
Through hole φ 0.2 × 33
0.5
TEST CIRCUIT BLK
2-56 X 3/16 PHILLIPS PAN HEAD
CASE 1100 pF CAP MURATA
0603 5.1K OHMS RESISTOR ROHM
0603 18 pF CAP ROHM
0603 4.7 pF CAP ROHM
0603 10 pF CAP ROHM
0603 8.2 pF CAP ROHM
CASE B 4.7 uF CAP ATC
0805 .1 uF CAP MURATA
0805 1000 pF CAP MURATA6
IC NEC, LD-MOS FET
GROUND LUG CONCORD
FEEDTHRU MURATA
FLANGE MOUNT JACK RECEPTACLE
NE5520379A-EVAL FAB. DRAWING
16
15
14
13
12
11
10
9
8
7
5
4
3
2
1
RF Output
NE5520379A
RECOMMENDED SOLDERING CONDITIONS
This prod�
those recommended below, contact your nearby sales office.
Soldering Method
Infrared Reflow
VPS
Wave Soldering
Soldering Conditions
Condition Symbol
Peak temperature (package surface temperature)
: 260°C or below
Time at peak temperature
: 10 seconds or less
Time at temperature of 220°C or higher
: 60 seconds or less
Preheating time at 120 to 180°C
: 120±30 seconds
Maximum number of reflow processes
: 3 times
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Peak temperature (package surface temperature)
: 215°C or below
Time at temperature of 200°C or higher
: 25 to 40 seconds
Preheating time at 120 to 150°C
: 30 to 60 seconds
Maximum number of reflow processes
: 3 times
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Peak temperature (molten solder temperature)
: 260°C or below
Time at peak temperature
: 10 seconds or less
IR260
VP215
WS260
Preheating temperature (package surface temperature) : 120°C or below
Partial Heating
Maximum number of flow processes
: 1 time
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Peak temperature (pin temperature)
: 350°C or below
Soldering time (per pin of device)
: 3 seconds or less
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
HS350-P3
Caution Do not use different soldering methods together (except for partial heating).
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
03/08/2005
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile: (408) 988-0279
Subject: Compliance with EU Directives
CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.
CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates
that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.
All devices with these suffixes meet the requirements of the RoHS directive.
This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that
go into its products as of the date of disclosure of this information.
Restricted Substance
per RoHS
Concentration Limit per RoHS
(values are not yet fixed)
Concentration contained
in CEL devices
-A
Not Detected
Lead (Pb)
< 1000 PPM
Mercury
< 1000 PPM
Not Detected
Cadmium
< 100 PPM
Not Detected
Hexavalent Chromium
< 1000 PPM
Not Detected
PBB
< 1000 PPM
Not Detected
PBDE
< 1000 PPM
Not Detected
-AZ
(*)
If you should have any additional questions regarding our devices and compliance to environmental
standards, please do not hesitate to contact your local representative.
Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance
content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information
provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better
integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate
information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL
suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for
release.
In no event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to
customer on an annual basis.
See CEL Terms and Conditions for additional clarification of warranties and liability.
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