Formosa FM5822-A Chip schottky barrier diodes - silicon epitaxial planer type Datasheet

Formosa MS
Chip Schottky Barrier Diodes
FM5822-A
Silicon epitaxial planer type
Features
SMA
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
0.185(4.8)
0.173(4.4)
0.012(0.3) Typ.
For surface mounted applications.
0.110(2.8)
0.094(2.4)
Exceeds environmental standards of MIL-S-19500 /
228
0.165(4.2)
0.150(3.8)
Low leakage current.
0.067(1.7)
0.060(1.5)
0.040(1.0) Typ.
0.040 (1.0) Typ.
Dimensions in inches and (millimeters)
Mechanical data
Case : Molded plastic, JEDEC DO-214AC
Terminals : Solder plated, s olderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : 0.0015 ounce, 0.15 gr am
MAXIMUM RATINGS (AT TA=25oC unless otherwise noted)
PARAMETER
Forward rectified current
CONDITIONS
MIN.
TYP.
MAX.
UNIT
IO
3.0
A
IF = 1 A , TA =
25o C
VF
0.42
V
IF = 2 A , TA =
25o C
VF
0.49
V
IF = 1 A , TA =
o
125 C
VF
0.34
V
IF = 2 A , TA =
125o C
VF
0.43
V
IFSM
80
A
peak reverse voltage
VRRM
40
V
RMS voltage
VRMS
28
V
VR
40
V
0.5
mA
Forward voltage
Forward surge current
See Fig.1
Symbol
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
Continuous reverse voltage
Reverse current
VR = VRRM TA =
25o C
VR = VRRM TA = 125o C
Thermal resistance
Junction to ambient
Diode junction capacitance
f=1MHz and applied 4vDC reverse voltage
Operating temperature
Storage temperature
IR
20
Rq JA
80
CJ
250
mA
o
C / w
pF
TJ
-55
+150
o
C
TSTG
-55
+150
o
C
RATING AND CHARACTERISTIC CURVES (FM5822-A)
FIG.2-TYPICAL FORWARD
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
50
2.5
2.0
1.5
1.0
0.5
0
20
40
60
80
100
120
140
160
180
200
AMBIENT TEMPERATURE ( C)
PEAK FORWAARD SURGE CURRENT,(A)
FIG.3-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
INSTANTANEOUS FORWARD CURRENT,(A)
AVERAGE FORWARD CURRENT,(A)
CHARACTERISTICS
3.0
10
3.0
1.0
Tj=25 C
Pulse Width 300us
1% Duty Cycle
0.1
100
.01
80
.1
.3
.5
.7
.9
1.1
1.3
1.5
FORWARD VOLTAGE,(V)
60
8.3ms Single Half
Tj=25 C
Sine Wave
40
JEDEC method
20
FIG.5 - TYPICAL REVERSE
0
CHARACTERISTICS
1
5
50
10
100
100
NUMBER OF CYCLES AT 60Hz
REVERSE LEAKAGE CURRENT, (mA)
FIG.4-TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE,(pF)
700
600
500
400
300
200
10
1.0
Tj=75 C
.1
Tj=25 C
100
0
.01
.05
.1
.5
1
REVERSE VOLTAGE,(V)
5
10
50
100
.01
0
20
40
60
80
100 120 140
PERCENTAGE RATED PEAK REVERSE VOLTAGE
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