Data Sheet N0201S R07DS0719EJ0100 Rev.1.00 Mar 30, 2012 NPN SILICON EPITAXIAL TRANSISTOR FEATURES Complements to N0201R. VCEO = 30 V IC(DC) = 1.0 A Miniature package SOT-23F (2SD999: Package variation of 3pPoMM) PRODUCT LINEUP Part Number N0201S-T1-AT Packing Tape 3000p/reel Package Name SOT-23F Package Code PVSF0003ZA-A Mass [TYP.] 0.0126g ABSOLUTE MAXIMUM RATINGS (Ta = 25C) Parameter Collector to Base Voltage Symbol VCBO Ratings 30 Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (pulse) *1 VCEO 25 VEBO 5.0 IC(DC) 1.0 IC(pulse) 1.5 Total Power Dissipation PT1 0.2 Total Power Dissipation *2 PT2 1.0 Junction Temperature Tj 150 Storage Temperature Tstg 55 to 150 Note *1. PW 10 ms, Duty Cycle 50% 2 *2. FR-4 board size 2500 mm 1.6 mm, t 5 sec Unit V V V A A W W C C ELECTRICAL CHARACTERISTICS (Ta = 25C) Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Collector Saturation Voltage Base Saturation Voltage Base to Emitter Voltage Gain Bandwidth Product Output Capacitance Note *1. Pulsed Symbol ICBO IEBO hFE1*1 hFE2*1 VCE(sat)*1 1 Condition VCB = 30 V, IE = 0 VEB = 5.0 V, IC = 0 VCE = 1.0 V, IC = 100 mA VCE = 1.0 V, IC = 1.0 A IC = 1.0 A, IB = 100 mA VBE(sat)* VBE*1 IC = 1.0 A, IB = 100 mA VCE = 6.0 V, IC = 10 mA fT Cob VCE = 6.0 V, IE = 10 mA VCB = 10 V, IE = 0, f = 1.0 MHz MIN. TYP. 90 50 200 140 0.21 600 1.0 630 100 18 MAX. 100 100 400 Unit nA nA 0.4 V 1.2 700 V mV MHz pF hFE Classification Marking hFE1 CM 90 to 180 R07DS0719EJ0100 Rev.1.00 Mar 30, 2012 CL 135 to 270 CK 200 to 400 Page 1 of 5 N0201S TYPICAL CHARACTERISTICS (Ta = 25C) DERATING FACTOR FORWARD BIAS SAFE OPERATING AREA 10 100 IC - Collector Current - (A) dT - Percentage of Rated Power - % 120 SAFE OPERATING AREA 80 60 40 20 Ta = 25˚C Single pulse 1 ms 10 ms 1 100 ms 0.1 0.01 1 10 VCE - Collector to Emitter Voltage - (V) 0 0 20 100 40 60 80 100 120 140 160 TA - Ambient Temperature - ˚C COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 4.5 4.0 5.0 3.5 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 1 0.04 100 3.0 90 0.03 IC - Collector Current - (A) IC - Collector Current - (A) 0.8 80 70 60 0.02 50 40 2.5 2.0 0.6 1.5 0.4 1.0 30 0.01 20 0.2 IB = 0.5 mA IB = 10 μA 0 0 0 2 4 6 8 VCE - Collector to Emitter Voltage - (V) 10 VCE(sat) - Collector Saturation Voltage - (V) VBE(sat) - Base Saturation Voltage - (V) 125˚C 25˚C 25˚C 100 VCE = 1 V Pulsed 10 0.001 0.01 0.1 1 IC - Collector Current - (A) R07DS0719EJ0100 Rev.1.00 Mar 30, 2012 0.4 0.8 1.2 1.6 VCE - Collector to Emitter Voltage - (V) 2 COLLECTOR AND BASE SATURATION VOLTAGE vs. COLLECTOR CURRENT DC CURRENT GAIN vs. COLLECTOR CURRENT 1000 hFE - DC Current Gain 0 10 10 IC = 10IB 1 VBE(sat) 0.1 VCE(sat) 0.01 0.001 0.001 0.01 0.1 1 IC - Collector Current - (A) 10 Page 2 of 5 N0201S COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 10 1000 fT - Gain Bandwidth Product - (MHz) IC - Collector Current - (A) VCE = 6 V Pulsed 1 TA = 125˚C 0.1 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 25˚C −25˚C 0.01 0.001 VCE = 6 V 100 10 1 Cob - Output Capacitance - (pF) 100 0.3 0.6 0.9 VBE - Base to Emitter Voltage - (V) 10 100 IC - Collector Current - (mA) 1000 1.2 OUTPUT CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE IE = 0 f = 1.0 MHz 10 SWITCHING TIME vs. COLLECTOR CURRENT 1000 tSW - Switching Time - (ns) 0.0001 0.0 tstg VCE = 10 V IC = 10IB1 = −10IB2 PW = 50 μs 100 tf ton 1 0.1 10 1 10 VCB - Collector to Base Voltage - (V) R07DS0719EJ0100 Rev.1.00 Mar 30, 2012 100 10 100 1000 IC - Collector Current - (mA) 10000 Page 3 of 5 N0201S PACKAGE DRAWING (Unit: mm) 3 2 1 1: Emitter 2: Base 3: Collector R07DS0719EJ0100 Rev.1.00 Mar 30, 2012 Page 4 of 5 Notice 1. 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