AD ADG419 Lc2mos precision mini-dip analog switch Datasheet

a
LC2MOS Precision
Mini-DIP Analog Switch
ADG419
FEATURES
44 V Supply Maximum Ratings
VSS to VDD Analog Signal Range
Low On Resistance (< 35 ⍀)
Ultralow Power Dissipation (< 35 ␮W)
Fast Transition Time (160 ns max)
Break-Before-Make Switching Action
Plug-In Replacement for DG419
FUNCTIONAL BLOCK DIAGRAM
D
S2
S1
IN
ADG419
SWITCH SHOWN FOR A
LOGIC "1" INPUT
APPLICATIONS
Precision Test Equipment
Precision Instrumentation
Battery Powered Systems
Sample Hold Systems
GENERAL DESCRIPTION
PRODUCT HIGHLIGHTS
The ADG419 is a monolithic CMOS SPDT switch. This
switch is designed on an enhanced LC2MOS process that provides low power dissipation yet gives high switching speed, low
on resistance and low leakage currents.
1. Extended Signal Range
The ADG419 is fabricated on an enhanced LC2MOS process, giving an increased signal range that extends to the
supply rails.
The on resistance profile of the ADG419 is very flat over the full
analog input range, ensuring excellent linearity and low distortion. The part also exhibits high switching speed and high signal
bandwidth. CMOS construction ensures ultralow power dissipation, making the parts ideally suited for portable and battery
powered instruments.
2. Ultralow Power Dissipation
Each switch of the ADG419 conducts equally well in both
directions when ON and has an input signal range that extends
to the supplies. In the OFF condition, signal levels up to the
supplies are blocked. The ADG419 exhibits break-beforemake switching action.
3. Low RON
4. Single Supply Operation
For applications where the analog signal is unipolar, the
ADG419 can be operated from a single rail power supply.
The part is fully specified with a single +12 V power supply
and will remain functional with single supplies as low as
+5 V.
REV. A
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700
World Wide Web Site: http://www.analog.com
Fax: 781/326-8703
© Analog Devices, Inc., 1998
ADG419–SPECIFICATIONS1
Dual Supply
(VDD = +15 V ⴞ 10%, VSS = –15 V ⴞ 10%, VL = +5 V ⴞ 10%, GND = 0 V, unless otherwise noted)
Parameter
ANALOG SWITCH
Analog Signal Range
RON
LEAKAGE CURRENTS
Source OFF Leakage I S (OFF)
Drain OFF Leakage I D (OFF)
Channel ON Leakage I D, IS (ON)
B Version
–40ⴗC to
+25ⴗC
+85ⴗC
Units
Test Conditions/Comments
V
Ω typ
Ω max
VD = ± 12.5 V, IS = –10 mA
VDD = +13.5 V, VSS = –13.5 V
± 30
nA typ
nA max
nA typ
nA max
nA typ
nA max
VDD = +16.5 V, VSS = –16.5 V
VD = ± 15.5 V, VS = ⫿15.5 V;
Test Circuit 2
VD = ± 15.5 V, VS = ⫿15.5 V;
Test Circuit 2
VS = VD = ± 15.5 V;
Test Circuit 3
2.4
0.8
2.4
0.8
V min
V max
± 0.005
± 0.5
± 0.005
± 0.5
µA typ
µA max
VIN = VINL or VINH
200
ns max
RL = 300 Ω, CL = 35 pF;
VS1 = ± 10 V, VS2 = ⫿10 V;
Test Circuit 4
RL = 300 Ω, CL = 35 pF;
VS1 = VS2 = ± 10 V;
Test Circuit 5
RL = 50 Ω, f = 1 MHz;
Test Circuit 6
RL = 50 Ω, f = 1 MHz;
Test Circuit 7
f = 1 MHz
f = 1 MHz
VSS to VDD
25
35
± 0.1
± 0.25
± 0.1
± 0.75
± 0.4
± 0.75
DIGITAL INPUTS
Input High Voltage, V INH
Input Low Voltage, VINL
Input Current
IINL or IINH
DYNAMIC CHARACTERISTICS 2
tTRANSITION
T Version
–55ⴗC to
+25ⴗC +125ⴗC
160
VSS to VDD
25
35
45
± 0.1
± 0.25
± 0.1
± 0.75
± 0.4
± 0.75
±5
±5
±5
200
145
45
± 15
± 30
Break-Before-Make Time
Delay, tD
30
5
30
5
ns typ
ns min
OFF Isolation
80
80
dB typ
Channel-to-Channel Crosstalk
90
70
dB typ
CS (OFF)
CD, CS (ON)
6
55
6
55
pF typ
pF typ
0.0001
1
0.0001
1
0.0001
1
0.0001
1
0.0001
1
0.0001
1
µA typ
µA max
µA typ
µA max
µA typ
µA max
POWER REQUIREMENTS
IDD
ISS
IL
2.5
2.5
2.5
2.5
2.5
2.5
VDD = +16.5 V, VSS = –16.5 V
VIN = 0 V or 5 V
VL = +5.5 V
NOTES
1
Temperature ranges are as follows: B Version: –40°C to +85°C; T Version: –55°C to +125°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
–2–
REV. A
ADG419
Single Supply (V
DD =
+12 V ⴞ 10%, VSS = 0 V, VL = +5 V ⴞ 10%, GND = 0 V, unless otherwise noted)
Parameter
B Version
–40ⴗC to
+25ⴗC
+85ⴗC
ANALOG SWITCH
Analog Signal Range
RON
40
T Version
–55ⴗC to
+25ⴗC +125ⴗC
Units
Test Conditions/Comments
V
Ω typ
Ω max
VD = +3 V, +8.5 V, IS = –10 mA
VDD = +10.8 V
± 30
nA typ
nA max
nA typ
nA max
nA typ
nA max
VDD = +13.2 V
VD = 12.2 V/1 V, VS = 1 V/12.2 V;
Test Circuit 2
VD = 12.2 V/1 V, VS = 1 V/12.2 V;
Test Circuit 2
VS = VD = 12.2 V/1 V;
Test Circuit 3
2.4
0.8
2.4
0.8
V min
V max
± 0.005
± 0.5
± 0.005
± 0.5
µA typ
µA max
VIN = VINL or VINH
250
ns max
RL = 300 Ω, CL = 35 pF;
VS1 = 0 V/8 V, VS2 = 8 V/0 V;
Test Circuit 4
RL = 300 Ω, CL = 35 pF;
VS1 = VS2 = +8 V;
Test Circuit 5
RL = 50 Ω, f = 1 MHz;
Test Circuit 6
RL = 50 Ω, f = 1 MHz;
Test Circuit 7
f = 1 MHz
f = 1 MHz
0 to VDD
0 to VDD
40
60
LEAKAGE CURRENT
Source OFF Leakage I S (OFF)
Drain OFF Leakage I D (OFF)
Channel ON Leakage I D, IS (ON)
± 0.1
± 0.25
± 0.1
± 0.75
± 0.4
± 0.75
±5
±5
±5
DIGITAL INPUTS
Input High Voltage, V INH
Input Low Voltage, VINL
Input Current
IINL or IINH
DYNAMIC CHARACTERISTICS 2
tTRANSITION
180
250
70
± 0.1
± 0.25
± 0.1
± 0.75
± 0.4
± 0.75
170
± 15
± 30
Break-Before-Make Time
Delay, tD
60
60
ns typ
OFF Isolation
80
80
dB typ
Channel-to-Channel Crosstalk
90
70
dB typ
CS (OFF)
CD, CS (ON)
13
65
13
65
pF typ
pF typ
0.0001
1
0.0001
1
0.0001
1
0.0001
1
µA typ
µA max
µA typ
µA max
POWER REQUIREMENTS
IDD
IL
2.5
2.5
2.5
2.5
VDD = +13.2 V
VIN = 0 V or 5 V
VL = +5.5 V
NOTES
1
Temperature ranges are as follows: B Version: –40°C to +85°C; T Version: –55°C to +125°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
Table I. Truth Table
Logic
Switch 1
Switch 2
0
1
ON
OFF
OFF
ON
PIN CONFIGURATION
DIP/SOIC/␮SOIC
D 1
S1
8
ADG419
S2
VSS
TOP VIEW
GND 3 (Not to Scale) 6 IN
ORDERING GUIDE
VDD 4
Model
Temperature Ranges
Package Options*
ADG419BN
ADG419BR
ADG419BRM
ADG419TQ
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–55°C to +125°C
N-8
SO-8
RM-8
Q-8
*N = Plastic DIP, Q = Cerdip, RM = µSOIC, SO = 0.15" Small Outline IC (SOIC).
REV. A
2
–3–
7
5
VL
ADG419
ABSOLUTE MAXIMUM RATINGS 1
(TA= +25°C unless otherwise noted)
VDD to VSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+44 V
VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +25 V
VSS to GND . . . . . . . . . . . . . . . . . . . . . . . . . . +0.3 V to –25 V
VL to GND . . . . . . . . . . . . . . . . . . . . . . –0.3 V to VDD + 0.3 V
Analog, Digital Inputs2 . . . . . . . . . . . . VSS – 2 V to VDD + 2 V
or 30 mA, Whichever Occurs First
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . 30 mA
Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
(Pulsed at 1 ms, 10% Duty Cycle Max)
Operating Temperature Range
Industrial (B Version) . . . . . . . . . . . . . . . . . –40°C to +85°C
Extended (T Version) . . . . . . . . . . . . . . . . –55°C to +125°C
Storage Temperature Range . . . . . . . . . . . . . –65°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Cerdip Package, Power Dissipation . . . . . . . . . . . . . . . 600 mW
θJA, Thermal Impedance . . . . . . . . . . . . . . . . . . . . 110°C/W
Lead Temperature, Soldering (10 sec) . . . . . . . . . . . +300°C
Plastic Package, Power Dissipation . . . . . . . . . . . . . . . 400 mW
θJA, Thermal Impedance . . . . . . . . . . . . . . . . . . . . 100°C/W
Lead Temperature, Soldering (10 sec) . . . . . . . . . . . +260°C
SOIC Package, Power Dissipation . . . . . . . . . . . . . . . . 400 mW
θJA, Thermal Impedance . . . . . . . . . . . . . . . . . . . . 155°C/W
µSOIC Package, Power Dissipation . . . . . . . . . . . . . . . 315 mW
θJA, Thermal Impedance . . . . . . . . . . . . . . . . . . . . 205°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec). . . . . . . . . . . . . . . . . . . . . . . +215°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . +220°C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. Only one absolute
maximum rating may be applied at any one time.
2
Overvoltages at IN, S or D will be clamped by internal diodes. Current should be
limited to the maximum ratings given.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the ADG419 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
CD, CS (ON)
tTRANSITION
TERMINOLOGY
VDD
VSS
VL
GND
S
D
IN
RON
IS (OFF)
ID (OFF)
ID, IS (ON)
VD (VS)
CS (OFF)
Most positive power supply potential.
Most negative power supply potential in dual
supplies. In single supply applications, it
may be connected to GND.
Logic power supply (+5 V).
Ground (0 V) reference.
Source terminal. May be an input or an
output.
Drain terminal. May be an input or an
output.
Logic control input.
Ohmic resistance between D and S.
Source leakage current with the switch
“OFF.”
Drain leakage current with the switch
“OFF.”
Channel leakage current with the switch
“ON.”
Analog voltage on terminals D, S.
“OFF” switch source capacitance.
tD
VINL
VINH
IINL (IINH)
Crosstalk
Off Isolation
IDD
ISS
–4–
WARNING!
ESD SENSITIVE DEVICE
“ON” switch capacitance.
Delay time between the 50% and 90% points
of the digital inputs and the switch “ON”
condition when switching from one address
state to another.
“OFF” time or “ON” time measured between the 90% points of both switches
when switching from one address state
to the other.
Maximum input voltage for logic “0.”
Minimum input voltage for logic “1.”
Input current of the digital input.
A measure of unwanted signal which is
coupled through from one channel to
another as a result of parasitic capacitance.
A measure of unwanted signal coupling
through an “OFF” channel.
Positive supply current.
Negative supply current.
REV. A
Typical Performance Characteristics–ADG419
100
50
TA = +258C
40
30
VDD = +10V
VSS = –10V
60
VDD = +10V
VSS = 0V
20
VDD = +12V
VSS = 0V
40
VDD = +12V
VSS = –12V
10
20
VDD = +15V
VSS = –15V
0
–15
VDD = +15V
VSS = 0V
0
–10
–5
0
VS , VD – Volts
5
10
15
0
10
15
Figure 4. RON as a Function of VD (VS): Single Supply
Voltage
100
50
VDD = +15V
VSS = –15V
VL = +5V
40
5
VS , VD – Volts
Figure 1. RON as a Function of VD (VS): Dual Supply Voltage
VDD = +12V
VSS = 0V
VL = +5V
80
30
RON – V
RON – V
VDD = +5V
VSS = 0V
80
RON – V
RON – V
TA = +258C
VDD = +5V
VSS = –5V
+1258C
+1258C
60
40
20
+858C
10
20
+258C
+858C
+258C
0
–15
–10
–5
0
VS , VD – Volts
0
5
10
15
Figure 2. RON as a Function of VD (VS) for Different
Temperatures
6
VS , VD – Volts
12
9
0.006
VDD = +15V
VSS = –15V
TA = +258C
0.004
IS (OFF)
0.00
ID (OFF)
–0.01
– 0.02
–0.03
–15
VDD = +12V
VSS = 0V
TA = +258C
ID (ON)
LEAKAGE CURRENT – nA
0.01
LEAKAGE CURRENT – nA
3
Figure 5. RON as a Function of VD (VS) for Different
Temperatures
0.02
ID (ON)
IS (OFF)
0.002
ID (OFF)
0.000
–0.002
–10
–5
0
VS , VD – Volts
–0.004
5
10
15
0
Figure 3. Leakage Currents as a Function of VS (VD)
REV. A
0
2
4
6
VS , VD – Volts
8
10
12
Figure 6. Leakage Currents as a Function of VS (VD)
–5–
ADG419
220
10mA
200
180
I SUPPLY
100mA
I+, I–
tTRANSITION – ns
1mA
VDD = +15V
VSS = –15V
VL = +5V
10mA
1mA
IL
160
100nA
120
10nA
100
80
1nA
102
103
104
105
FREQUENCY – Hz
106
SINGLE SUPPLY
VIN = 0V/5V
140
107
DUAL SUPPLY
VIN = 65V
6
8
10
12
SUPPLY VOLTAGE – Volts
16
14
Figure 8. Transition Time vs. Power Supply Voltage
Figure 7. Supply Current vs. Input Switching Frequency
Test Circuits
IDS
V1
IS (OFF)
S
S
ID (OFF)
D
S
D
ID (ON)
D
VD
VS
VD
VS
VS
RON = V1/IDS
Test Circuit 2. Off Leakage
Test Circuit 1. On Resistance
+15V
+5V
VDD
VL
Test Circuit 3. On Leakage
3V
S1
VOUT
S2
RL
300V
IN
50%
0V
D
VS1
VS2
50%
VIN
tTRANSITION
tTRANSITION
CL
35pF
90%
OUTPUT
VIN
GND
VSS
90%
–15V
Test Circuit 4. Transition Time, tTRANSITION
VS1
VS2
+15V
+5V
VDD
VL
3V
D
S1
VOUT
S2
RL
300V
IN
ADDRESS
DRIVE(VIN)
0V
CL
35pF
tD
VOUT
VIN
GND
0.9VO
tD
0.9VO
0.9VO
0.9VO
VSS
–15V
Test Circuit 5. Break-Before-Make Time Delay, tD
–6–
REV. A
ADG419
+15V
0.1mF
+15V
0.1mF
+5V
0.1mF
VDD
+5V
0.1mF
VL
S1
VL
VDD
S
VOUT
VS
VS
RL
50V
IN
GND
50V
D
D
VOUT
VSS
S2
RL
50V
VIN
VIN
GND
VSS
0.1mF
0.1mF
–15V
–15V
CHANNEL-TO-CHANNEL CROSSTALK = 20 3 LOG | VS/VOUT |
Test Circuit 6. Off Isolation
REV. A
Test Circuit 7. Crosstalk
–7–
ADG419
OUTLINE DIMENSIONS
Dimensions shown in inches and (mm).
8-Lead Plastic DIP (N-8)
8-Lead Cerdip (Q-8)
8
0.005 (0.13)
MIN
5
8
0.280 (7.11)
0.240 (6.10)
1
4
0.060 (1.52)
0.015 (0.38)
PIN 1
0.210 (5.33)
MAX
0.160 (4.06)
0.115 (2.93)
0.022 (0.558) 0.100 0.070 (1.77)
0.014 (0.356) (2.54) 0.045 (1.15)
BSC
SEATING
PLANE
1
1
0.320 (8.13)
0.290 (7.37)
0.405 (10.29)
0.060 (1.52)
MAX
0.015 (0.38)
0.200 (5.08)
MAX
0.015 (0.381)
0.008 (0.204)
0.150
(3.81)
0.200 (5.08)
MIN
0.125 (3.18)
0.023 (0.58) 0.100 0.070 (1.78) SEATING
PLANE
0.014 (0.36) (2.54) 0.030 (0.76)
BSC
15°
0°
0.015 (0.38)
0.008 (0.20)
8-Lead SOIC (SO-8)
(Narrow Body)
0.122 (3.10)
0.114 (2.90)
8
4
PIN 1
0.195 (4.95)
0.115 (2.93)
0.130
(3.30)
MIN
5
0.310 (7.87)
0.220 (5.59)
0.325 (8.25)
0.300 (7.62)
8-Lead ␮SOIC (RM-8)
0.122 (3.10)
0.114 (2.90)
0.055 (1.4)
MAX
C1926a–0–9/98
0.430 (10.92)
0.348 (8.84)
0.1968 (5.00)
0.1890 (4.80)
5
0.1574 (4.00)
0.1497 (3.80)
0.199 (5.05)
0.187 (4.75)
8
5
1
4
0.2440 (6.20)
0.2284 (5.80)
4
PIN 1
0.0098 (0.25)
0.0040 (0.10)
PIN 1
0.0256 (0.65) BSC
0.120 (3.05)
0.112 (2.84)
0.018 (0.46)
SEATING 0.008 (0.20)
PLANE
0.043 (1.09)
0.037 (0.94)
0.011 (0.28)
0.003 (0.08)
338
278
0.0500 0.0192 (0.49)
SEATING (1.27)
0.0098 (0.25)
PLANE BSC 0.0138 (0.35) 0.0075 (0.19)
0.0196 (0.50)
x 45°
0.0099 (0.25)
8°
0° 0.0500 (1.27)
0.0160 (0.41)
0.028 (0.71)
0.016 (0.41)
PRINTED IN U.S.A.
0.006 (0.15)
0.002 (0.05)
0.120 (3.05)
0.112 (2.84)
0.0688 (1.75)
0.0532 (1.35)
–8–
REV. A
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