WILLAS FM120-M+ DTC123JCA THRU NPN Digital Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to SOT-23 optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. Planar Die Construction • Epitaxial high-speed switching. • Ultra NPN planar Typeschip, Available • Complementary metal silicon junction. • Silicon epitaxial • Built-In Biasing Resistors • Lead-free parts meet environmental standards of • Pb-Free package is available MIL-STD-19500 /228 RoHS product for packing code suffix "G" • RoHS product for packing code suffix ”G” Halogen free product for packing code suffix "H" Halogen free product for packing code suffix “H” Mechanical data • Epoxy meets UL 94 V-0 flammability rating : UL94-V0 rated • Epoxy • Moisure Sensitivity Level 1 flame retardant • Case : Molded plastic, SOD-123H , Terminals :Plated terminals, solderable per MIL-STD-750 Absolute• maximum ratings @ 25к 0.146(3.7) 0.130(3.3) .063(1.60) .047(1.20) Features 0.071(1.8) 0.056(1.4) .080(2.04) .070(1.78) 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. .006(0.15)MIN. 0.031(0.8) Typ. 0.012(0.3) Typ. .122(3.10) .106(2.70) .110(2.80) Single phase half wave, 60Hz, resistive of inductive load. Electrical Characteristics @ 25 20% For capacitive load, derate current by к .083(2.10) Method 2026 Symbol Parameter Min Typ Max Unit VCC Supply voltage 50 --V Dimensions in inches and (millimeters) • Polarity : Indicated by cathode band --VIN Input voltage -5 --+12 V Position : Any • Mounting Pd Power dissipation --200 --mW Tj Junction temperature --150 --• Weight : Approximated 0.011 gram ć Tstg Storage temperature -55 --150 ć IO 100 RATINGS AND ELECTRICAL CHARACTERISTICS Output MAXIMUM current mA IC(MAX) 100 Ratings at 25℃ ambient temperature unless otherwise specified. .008(0.20) .003(0.08) .055(1.40) .035(0.89) Symbol Parameter Min Typ Max Unit SYMBOL---FM120-MH 0.5 Input voltage RATINGS (VCC=5V, IO=100A) VI(off) --- FM130-MH V FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH --1.1 VMarking =0.3V, I =5mA) (V --I(on) O O Code 12 13 V 14 15 16 18 10 115 120 VMaximum Output voltage (I =5mA,I =0.25mA) --0.1 0.3 O(on) O i 20 30 V 40 50 60 80 100 150 200 Recurrent Peak Reverse Voltage VRRM .004(0.10)MAX. II Input current (VI=5V) ----3.6 mA 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage V RMS IO(off) Output current (VCC=50V, VI=0) ----0.5 A Maximum DC Voltage 40 50 60 80 100 150 200 GI DC Blocking current gain (VO=5V, IO=10mA) 80VDC --- 20 --- 30 R Input resistance 1.54 2.2 2.86 K 1 ¡ Maximum Average Forward Rectified Current IO 1.0 .020(0.50) R2/R1 Resistance ratio 17 21 26 .012(0.30) Transition frequency Peak Forward Surge Current 8.3 ms single half sine-wave fT ---IFSM 250 --MHz 30 (VO=10V, IO=5mA, f=100MHz) superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range -55 to +125 - 65 to +175 Solder Suggested Pad Layout *Marking:TSTG E42 CHARACTERISTICS FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH .031 VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage Dimensions 40 in inches and (millimeters) 120 -55 to +150 RΘJA Typical Thermal Resistance (Note 2) @T A=125℃ IR 0.50 0.70 0.9 0.85 .800 0.92 0.5 .035 .900 10 .079 2.000 NOTES: inches mm 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient .037 .950 .037 .950 2012-06 2012-0 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ DTC123JCA THRU NPN Digital Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Features 100 Typical Characteristics Package outline ON Characteristics OFF Characteristics • Batch process design, excellent power dissipation offers 10 better reverse leakage current and thermal VOresistance. =0.3V optimize board space. INPUT VOLTAGE a 1 • 0.3 MIL-STD-19500 /228 Ta=100℃ RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" 3 (mA) 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 1 I0 VI(ON) (V) • Low power loss, high efficiency. • High current capability, low forward voltage drop. 10 • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. 3 • Silicon epitaxial planar chip, metal silicon junction. standards of • Lead-free parts meet environmental T =25℃ OUTPUT CURRENT 30 VCC=5V SOD-123H • Low profile surface mounted application in order to 0.071(1.8) 0.056(1.4) Ta=100℃ 0.3 Ta=25℃ 0.1 0.03 Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant 1 10 100 30 3 : Molded plastic, SOD-123H • Case 0.3 , OUTPUT CURRENT I (mA) • Terminals :Plated terminals, solderable per MIL-STD-750 0.1 0.1 0.01 0.2 0.4 0.031(0.8) Typ. 0.6 INPUT VOLTAGE O 0.8 VI(OFF) 1.0 0.031(0.8) Typ. (V) Method 2026 • Polarity : Indicated by cathode VO(ON) —— IOband 1000 • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) GI —— IO 1000 IO/II=20 VO=5V 300 OUTPUT VOLTAGE 100 RATINGS Maximum Recurrent Peak Reverse Voltage Ta=25℃ 30 Maximum RMS Voltage Maximum DC Blocking Voltage VRRM 12 20 VRMS 14 VDC 20 10 1 10 half sine-wave 30 3 Peak Forward Surge Current 8.3 ms single IFSM OUTPUT CURRENT superimposed on rated load (JEDEC method) IO (mA) 13 30 21 30 1 0.1 100 Storage Temperature Range 18 80 10 100 115 150 120 200 28 35 42 56 70 105 140 40 50 60 80 100 150 200 0.3 1 -55 to +125 Ta=25℃ 10 3 30 PD IO 30 100 (mA) 40 120 —— Ta -55 to +150 - 65 to +175 400 TSTG f=1MHz CHARACTERISTICS 16 60 OUTPUT CURRENT TJ VR 10 350 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH CO Maximum Average Reverse Current at @T A=25℃ (mW) VF Maximum Forward Voltage at 1.0A DC PD IR @T A=125℃ POWER DISSIPATION (pF) 3 15 50 1.0 CJ Typical Junction Capacitance (Note 1) Operating Temperature RangeCO —— OUTPUT CAPACITANCE 14 40 10 RΘJA Typical Thermal Resistance (Note 2) Rated DC Blocking Voltage 6 30 IO Maximum Average Forward Rectified Current 8 Ta=25℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Ta=100℃ Marking Code Ta=100℃ 100 GI VO(ON) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% DC CURRENT GAIN (mV) 300 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 4 2- Thermal Resistance From Junction to Ambient 2 0.50 0.70 300 0.92 0.5 10 250 200 0.9 0.85 DTC123JCA 150 100 50 0 0 2012-06 2012-0 4 8 12 REVERSE BIAS VOLTAGE 16 VR (V) 20 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP.