CGA-3318 CGA-3318Z Product Description Sirenza Microdevice’s CGA-3318 is a high performance Silicon Germanium HBT MMIC Amplifier. Designed with SiGe process technology for excellent linearity at an exceptional price. A Darlington configuration is utilized for broadband performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. The CGA-3318 contains two amplifiers for use in wideband Push-Pull CATV amplifiers requiring excellent second order performance. The second and third order non-linearities are greatly improved in the push pull configuration. Pb RoHS Compliant & Green Package Dual CATV Broadband High Linearity SiGe HBT Amplifier Amplifier Configuration 1 8 2 7 3 6 4 5 Product Features • Available in Lead free, RoHS compliant, & Green packaging • Excellent CSO/CTB/XMOD Performance at • • Applications • CATV Head End Driver and Predriver Amplifier • CATV Line Driver Amplifier ELECTRICAL SPECIFICATIONS S ym bol G O IP 2 O IP 3 P1dB IR L ORL NF +34 dBmV Output Power per Tone Dual Devices in each SOIC-8 Package simplify Push-Pull configuration PC board layout 5 to 900 MHz operation P a ra m e te r F re q .(M H z ) 5 50 500 870 S m a ll S ig na l G a in M in . Ty p . dB 1 0 .0 1 3 .2 1 2 .5 1 2 .5 1 2 .0 dBm 6 7 .0 6 9 .0 7 1 .5 6 9 .0 dBm 3 6 .0 3 6 .5 3 8 .0 3 8 .0 2 0 .0 2 1 .0 2 0 .6 dBm O utp ut S e c o nd O rd e r Inte rc e p t P o int To ne S p a c ing = 1 M H z, P o ut p e r to ne = + 6 d B m 50 250 500 O utp ut Third O rd e r Inte rc e p t P o int To ne S p a c ing = 1 M H z, P o ut p e r to ne = + 6 d B m 50 500 870 O utp ut P o w e r a t 1 d B G a in C o m p re s s io n 50 500 870 1 8 .6 Inp ut R e turn L o s s 500 5 0 -8 7 0 10 O utp ut R e turn L o s s 500 5 0 -8 7 0 10 1 7 .0 4 .2 4 .3 5 .0 U n its dB 1 2 .0 50 500 870 N o is e F ig ure B a lun Ins e rtio n L o s s Inc lud e d Max. dB dB 6 .0 CSO W o rs t C a s e O ve r B a nd , 7 9 C h., F la t, + 3 4 d B m V 70 C TB W o rs t C a s e O ve r B a nd , 7 9 C h., F la t, + 3 4 d B m V 68 dBc dBc XMOD W o rs t C a s e O ve r B a nd , 7 9 C h., F la t, + 3 4 d B m V 63 dBc VD D e vic e O p e ra ting V o lta g e 3 .9 4 .1 4 .3 V ID D e vic e O p e ra ting C urre nt 135 150 165 mA R T H (J -L ) The rm a l R e s is ta nc e (J unc tio n to L e a d ) 50 °C /W The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc.. All worldwide rights reserved. 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-101993 Rev H CGA-3318 Dual SiGe HBT Amplifier Absolute Maximum Ratings Parameter Absolute Limit Max Device Current (ID) 225 mA Parameter Rating Max Device Voltage (VD) 6V +18 dBm +150°C ESD Rating - Human Body Model (HBM) Class 1B Moisture Sensitivity Level MSL 1 Max. RF Input Power Max. Junction Temp. (TJ) Operating Temp. Range (TL) Reliability & Qualification Information This product qualification report can be downloaded at -40°C to +85°C +150°C Max. Storage Temp. www.sirenza.com Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: TL=TLEAD IDVD < (TJ - TL) / RTH, j-l Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. Typical RF Performance: VS=8V, ID=150mA @ TL=+25°C, RBIAS=51 Ohms, Push-Pull Configuration Gain vs. Frequency 16 14 |S21| (dB) 12 10 +25°C -40°C 8 +85°C 6 0 100 200 300 400 500 600 700 800 900 1000 Frequency (MHz) Output Return Loss vs. Frequency Input Return Loss vs. Frequency 0 0 -5 +25°C -4 -40°C -6 +85°C -8 -15 +25°C -20 -40°C -25 +85°C |S22| (dB) |S11| (dB) -10 -2 -10 -12 -14 -16 -18 -30 -20 0 100 200 300 400 500 600 700 800 900 1000 Frequency (MHz) 0 100 200 300 400 500 600 700 800 900 1000 Frequency (MHz) 75 Ohm Push Pull S-parameters are available for download at www.sirenza.com 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-101993 Rev H CGA-3318 Dual SiGe HBT Amplifier Typical RF Performance: VS=8V, ID=150mA @ TL=+25°C, RBIAS=51 Ohms, Push-Pull Configuration IP3 vs. Temperature IP2 vs. Temperature 80 45 75 40 70 IP2 (dBm) IP3 (dBm) 50 35 -40C 25C 30 65 60 -40°C 85C 25 55 20 50 +25°C +85°C 0 0.4 0.6 0.8 0 1 0.2 0.4 0.8 Frequency (GHz) Second Harmonic vs. Pout and Frequency Data shown is typical at 25C Third Harmonic vs. Pout and Frequency Data shown is typical at 25C 1 100 90 90 80 80 70 60 66MHz 50 100MHz 40 250MHz 30 70 60 66MHz 50 100MHz 40 250MHz 500MHz 30 500MHz 20 20 0 3 6 9 12 0 15 3 6 9 12 15 Pout (dBm) Pout (dBm) Push-Pull Noise Figure 50MHz-900MHz Typical 6 100 5 90 4 80 dBc NF (dB) 0.6 Frequency (GHz) IM3 (dBc) IM2 (dBc) 100 0.2 3 70 2 60 1 50 0 Push-Pull CTB/CSO/XMOD 34 dBmV/Ch., 79 Ch., Flat CTB CSO- CSO+ Xmod 40 0 200 400 600 800 1000 Frequency (MHz) 303 S. Technology Ct. Broomfield, CO 80021 0 100 200 300 400 500 600 Frequency (MHz) Phone: (800) SMI-MMIC 3 http://www.sirenza.com EDS-101993 Rev H CGA-3318 Dual SiGe HBT Amplifier CSO/CTB/XMOD Performance: VS=8V, ID=150mA @ TL=+25°C, RBIAS=51 Ohms, Push-Pull Config, 79 Ch. Flat Analog, No Digital Channels. Push-Pull XMOD vs. Pout and Frequency Push-Pull CTB vs. Pout and Frequency 100 100 90 32dBmV 34dBmV 36dBmV 38dBmV 40dBmV 42dBmV 34dBmV 36dBmV 38dBmV 40dBmV 42dBmV 80 dBc dBc 80 70 70 60 60 50 50 40 40 0 100 200 300 400 500 0 600 100 200 300 400 500 600 Frequency (MHz) Frequency (MHz) Push-Pull CSO- vs. Pout and Frequency 100 100 90 90 80 80 70 70 dBc dBc 32dBmV 90 Push-Pull CSO+ vs. Pout and Frequency 60 60 50 32dBmV 34dBmV 36dBmV 38dBmV 40dBmV 42dBmV 32dBmV 38dBmV 50 34dBmV 40dBmV 36dBmV 42dBmV 40 40 0 100 200 300 400 500 600 0 100 200 300 400 500 600 Frequency (MHz) Frequency (MHz) Note: CSO measurements > 85 dBc can be limited by system noise. 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 4 http://www.sirenza.com EDS-101993 Rev H CGA-3318 Dual SiGe HBT Amplifier Typical RF Performance - Single Ended - 50 Ohm System VS=8V, ID=75mA (one amp biased), TL=+25°C, RBIAS=51 Ohms |S11| & |S22| vs. Frequency Gain & Isolation vs. Frequency 0 0 -4 -5 12 -8 -10 10 -12 8 -16 Gain 6 -20 Isolation -20 -25 4 -24 2 -28 -35 -32 -40 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 |S11| -15 dB Gain (dB) 14 Isolation (dB) 16 -30 |S22| 0.0 4.0 0.5 1.0 Frequency (GHz) 1.5 2.0 2.5 3.0 3.5 4.0 3.5 4.0 Frequency (GHz) Typical RF Performance - Single Ended - 37.5 Ohm System VS=8V, ID=75mA (one amp biased), TL=+25°C, RBIAS=51 Ohms Gain & Isolation vs. Frequency |S11| & |S22| vs. Frequency 16 0 Gain -5 12 -8 -10 10 -12 8 -16 6 -20 Isolation -20 -30 -24 2 -28 -35 0 -32 -40 0.5 1.0 1.5 2.0 2.5 3.0 3.5 |S11| -25 4 0.0 |S22| -15 dB Isolation (dB) -4 14 Gain (dB) 0 4.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Frequency (GHz) Frequency (GHz) 50 Ohm and 37.5 Ohm Single Ended S-parameter files are available for download at www.sirenza.com 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 5 http://www.sirenza.com EDS-101993 Rev H CGA-3318 Dual SiGe HBT Amplifier Pin # Function 1 RF IN Device 1 RF input pin. This pin requires the use of an external DC blocking capacitor as shown in the schematic. 2,3 Ground Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possible. 4 RF IN Device 2 Same as pin 1 5 Device Pin Out RF output and bias pin. Bias should be supplied to this pin through an external series resistor RF OUT / Vcc and RF choke inductor. Because DC biasing is present on this pin, a DC blocking capacitor Device 2 should be used in most applications (see application schematic). The supply side of the bias network should be well bypassed. 6,7 8 Description Ground 8 2 7 3 6 4 5 Same as pins 2 and 3 RF OUT / Vcc Same as pin 5 Device 1 EPAD 1 Exposed area on the bottom side of the package must be soldered to the ground plane of the board for optimum thermal and RF performance. Several vias should be located under the EPAD as shown in the recommended land pattern on page 5. Ground 50-870 MHz Application Schematic 50-870 MHz Evaluation Board Layout Vs RBIAS Rbias 1µF Tant. 0.01µF 1000pF 68pF 1uF Tant. RF INPUT RF OUTPUT .01uF 1000pF 68pF 220 nH 1 Macom ETC1-1-13 8 Balun ETC1-1-13 Amp 1 1000 pF 220nH Balun ETC1-1-13 1000pF 1000pF 1000 pF 2,3 6,7 1000pF 220nH 1000 pF 1000 pF 4 5 Amp 2 CGA-3318 SOIC-08 1000pF 68pF 1000pF .01uF Macom ETC1-1-13 1uF Tant. 220 nH ECB-101611 Rev A ESOP-8 Push-Pull Eval Board Rbias 1µF Tant. 0.01µF 1000pF 68pF RBIAS Vs Recommended Bias Resistor Values for ID= 150mA Supply Voltage (VS) RBIAS RBIAS Power Rating RBIAS= 303 S. Technology Ct. Broomfield, CO 80021 8V 9V 12V 15V 51Ω 62Ω 100Ω 150Ω 1/2W 1/2W 1W 1W Part Number Ordering Information Part Number Reel Size Devices / Reel CGA-3318 7" 500 CGA-3318Z 7" 500 2(VS-VD) ID Phone: (800) SMI-MMIC 6 http://www.sirenza.com EDS-101993 Rev H CGA-3318 Dual SiGe HBT Amplifier Typical 5-100 MHz RF Performance: VS=8V, ID=150mA @ TL=+25°C, Push-Pull Configuration Return Loss vs. Frequency Gain vs. Frequency 0 16 -5 |S11| and |S22| (dB) 14 |S21| (dB) 12 10 8 6 -10 |S22| -15 -20 |S11| -25 -30 0 10 20 30 40 50 60 70 80 90 100 0 10 20 40 50 60 70 80 90 100 80 90 100 Frequency (MHz) Frequency (MHz) P1dB and IP3 vs. Frequency 22 30 Noise Figure vs. Frequency 40 8 21 39 7 20 38 19 37 36 5 4 3 2 IP3 17 NF (dB) P1dB 18 IP3 (dBm) P1dB (dBm) 6 35 1 16 0 10 20 30 40 50 60 70 80 34 90 100 110 0 0 10 20 30 Frequency (MHz) 40 50 60 70 110 Frequency (MHz) 5-100 MHz Application Schematic 5-100 MHz Evalution Board Layout Vs Rbias RBIAS 1µF Tant. 0.01µF 1000pF 68pF 1uF Tant. RF INPUT RF OUTPUT .01uF 1000pF 68pF 10 µΗ 1 Macom ETC1-1T 8 Amp 1 0.01 µF 2,3 10uH Balun ETC1-1T 0.01uF 0.01 µF 0.01 µF 0.01 µF 4 Macom ETC1-1T 0.01uF 10uH 5 CGA-3318 SOIC-08 10 µΗ 1uF Tant. 0.01µF 1000pF 0.01uF 68pF 1000pF .01uF Amp 2 1µF Tant. 0.01uF Balun ETC1-1T 6,7 68pF ECB-101611 Rev A ESOP-8 Push-Pull Eval Board Rbias RBIAS Vs 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 7 http://www.sirenza.com EDS-101993 Rev H CGA-3318 Dual SiGe HBT Amplifier PCB Pad Layout Dimensions in inches [millimeters] Sized for 31 mil thick FR-4 Nominal Package Dimensions & Package Marking Dimensions in inches [millimeters ] Refer to package drawing posted at www.sirenza.com for tolerances. Lot Code CGA3318 Lot Code CGA3318Z Tin-Lead Lead Free 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 8 http://www.sirenza.com EDS-101993 Rev H