Dynex DSF21060SV57 Fast recovery diode Datasheet

DSF21060SV
DSF21060SV
Fast Recovery Diode
Replaces March 1998 version, DDS4231-2.3
DS4231-3.0 January 2000
KEY PARAMETERS
VRRM
6000V
IF(AV)
1690A
IFSM
16000A
Qr
1200µC
trr
6.5µs
APPLICATIONS
■ Freewheel Diode.
■ Antiparallel Diode.
■ Inverters.
■ Choppers.
FEATURES
■ Double Side Cooling.
■ High Surge Capability.
■ Low Recovery Charge.
VOLTAGE RATINGS
Type Number
Repetitive Peak
Reverse Voltage
VRRM
V
DSF21060SV60
DSF21060SV59
DSF21060SV58
DSF21060SV57
DSF21060SV56
DSF21060SV55
6000
5900
5800
5700
5600
5500
Conditions
VRSM = VRRM + 100V
Outline type code: V.
See Package Details for further information.
CURRENT RATINGS
Symbol
Parameter
Conditions
Max.
Units
Double Side Cooled
IF(AV)
Mean forward current
Half wave resistive load, Tcase = 65oC
1690
A
IF(RMS)
RMS value
Tcase = 65oC
2655
A
Continuous (direct) forward current
Tcase = 65oC
2460
A
IF
Single Side Cooled (Anode side)
IF(AV)
Mean forward current
Half wave resistive load, Tcase = 65oC
1090
A
IF(RMS)
RMS value
Tcase = 65oC
1710
A
Continuous (direct) forward current
Tcase = 65oC
1520
A
IF
1/9
DSF21060SV
SURGE RATINGS
Symbol
IFSM
I2t
IFSM
I2t
IFSM
I2t
Parameter
Conditions
Max.
Units
12.8
kA
819.2 x 103
A2s
16.0
kA
1280 x 103
A2s
-
kA
-
A2s
Surge (non-repetitive) forward current
10ms half sine; with 0% VRRM, Tj = 125oC
I2t for fusing
Surge (non-repetitive) forward current
10ms half sine; with 50% VRRM, Tj = 125oC
I2t for fusing
Surge (non-repetitive) forward current
10ms half sine; with 100% VRRM, Tj = 125oC
I2t for fusing
THERMAL AND MECHANICAL DATA
Parameter
Symbol
Conditions
Double side cooled
Rth(j-c)
Thermal resistance - junction to case
Min.
Max.
Units
dc
-
0.0075
o
Anode dc
-
0.015
o
Cathode dc
-
0.015
o
Double side
-
0.002
o
Single side
-
0.004
o
-
130
o
C/W
C/W
Single side cooled
Rth(c-h)
C/W
C/W
Tvj
Virtual junction temperature
Tstg
Storage temperature range
-55
150
o
Clamping force
36.0
44.0
kN
-
2/9
Thermal resistance - case to heatsink
Clamping force 40.0kN
with mounting compound
C/W
Forwartd (conducting)
C
C
DSF21060SV
CHARACTERISTICS
Symbol
Parameter
Conditions
Typ.
Max.
Units
VFM
Forward voltage
At 600A peak, Tcase = 25oC
-
3.0
V
IRRM
Peak reverse current
At VRRM, Tcase = 125oC
-
75
mA
-
6.5
µs
trr
Reverse recovery time
Recovered charge (50% chord)
IF = 1000A, diRR/dt = 100A/µs
-
1500
µC
IRM
Reverse recovery current
Tcase = 125oC, VR = 100V
-
460
A
K
Soft factor
1.8
-
-
QRA1
VTO
Threshold voltage
At Tvj = 125oC
-
1.625
V
rT
Slope resistance
At Tvj = 125oC
-
0.66
mΩ
Forward recovery voltage
di/dt = 1000A/µs, Tj = 100oC
140
-
V
VFRM
DEFINITION OF K FACTOR AND QRA1
QRA1 = 0.5x IRR(t1 + t2)
dIR/dt
t1
t2
k = t1/t2
τ
0.5x IRR
IRR
3/9
DSF21060SV
CURVES
7000
Measured under pulse conditions
6000
Instantaneous forward current IF - (A)
5000
4000
3000
Tj = 150˚C
Tj = 25˚C
2000
1000
0
0
2.0
4.0
6.0
8.0
Instantaneous forward voltage VF - (V)
Fig. 1 Maximum (limit) forward characteristics
4/9
10.0
DSF21060SV
500
Measured under pulse conditions
Instantaneous forward current IF - (A)
400
300
Tj = 150˚C
Tj = 25˚C
200
100
0
1.0
1.5
2.0
2.5
3.0
Instantaneous forward voltage VF - (V)
Fig. 2 Maximum (limit) forward characteristics
500
Current
waveform
VFR
Voltage
waveform
Transient forward votage VFP - (V)
400
δy
di = δy
dt δx
δx
300
Tj = 100˚C limit
200
Tj = 25˚C limit
100
0
0
1000
2000
3000
4000
Rate of rise of forward current dIF/dt - (A/µs)
Fig. 3 Transient forward voltage vs rate of rise of forward current
5/9
DSF21060SV
100000
IF
QS = ∫
Conditions:
50µs
0
Tj = 125˚C,
Reverse recovered charge QS - (µC)
QS
VR = 100V
tp = 1ms
dIR/dt
10000
IRR
IF = 4000A
IF = 2000A
IF = 1000A
IF = 500A
IF = 200A
1000
IF = 100A
100
1
10
100
Rate of rise of reverse current dIR/dt - (A/µs)
1000
Fig. 4 Recovered charge
10000
Conditions:
Tj = 125˚C,
Reverse recovery current IRR - (A)
VR = 100V
IF = 4000A
IF = 2000A
IF = 1000A
IF = 500A
1000
IF = 200A
IF = 100A
100
10
1
10
100
Rate of rise of reverse current dIR/dt - (A/µs)
1000
Fig. 5 Typical reverse recovery current vs rate of rise of reverse current
6/9
DSF21060SV
Thermal impedance - ˚C/W
0.1
d.c.Double side cooled
0.01
0.001
0.0001
0.001
0.01
0.1
1.0
10
100
Time - (s)
Fig. 5 Maximum (limit) transient thermal impedance - junction to case - (˚C/W)
7/9
DSF21060SV
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
2 holes Ø3.6 x 2.0 deep (In both electrodes)
Cathode
27.0
25.4
Ø112.5 max
Ø73 nom
Ø73 nom
Anode
Nominal weight: 1100g
Clamping force: 43kN ±10%
Package outine type code: V
ASSOCIATED PUBLICATIONS
Title
Application Note
Number
Calculating the junction temperature or power semiconductors
AN4506
Recommendations for clamping power semiconductors
AN4839
Thyristor and diode measurement with a multi-meter
AN4853
Use of V , r on-state characteristic
AN5001
TO
8/9
T
DSF21060SV
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and
current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
solution (PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of preloaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm
Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839
HEATSINKS
Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the
factory.
http://www.dynexsemi.com
e-mail: [email protected]
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
Unit 7 - 58 Antares Drive,
Nepean, Ontario, Canada K2E 7W6.
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
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These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2000 Publication No. DS4231-3 Issue No. 3.0 January 2000
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
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