OPA727, OPA2727 OPA4727, OPA728 SBOS314B − SEPTEMBER 2004 − REVISED DECEMBER 2004 e-trim 20MHz, High Precision CMOS Operational Amplifier FEATURES D D D D D D D D D D DESCRIPTION OFFSET: 15µV (typ), 150µV (max) DRIFT: 0.3µV/°C (typ), 1.5µV/°C (max) BANDWIDTH: 20MHz SLEW RATE: 30V/µs BIAS CURRENT: 100pA (max) LOW NOISE: 6nV/√Hz at 100kHz THD+N: 0.0003% at 1kHz QUIESCENT CURRENT: 4.3mA/ch SUPPLY VOLTAGE: 4V to 12V SHUTDOWN MODE (OPA728): 6µA The OPA727 and OPA728 series op amps use a state-of-the-art 12V analog CMOS process and e-trim, a package-level trim, offering outstanding dc precision and ac performance. The extremely low offset (150µV max) and drift (1.5µV/°C) are achieved by trimming the IC digitally after packaging to avoid the shift in parameters as a result of stresses during package assembly. To correct for offset drift, the OPA727/OPA728 family is trimmed over temperature. The devices feature very high CMRR and open loop gain to minimize errors. Excellent ac characteristics, such as 20MHz GBW, 30V/µs slew rate and 0.0003% THD+N make the OPA727 and OPA728 well-suited for communication, high-end audio, and active filter applications. With a bias current of less than 100pA, they are ideal for use as transimpedance (I/V-conversion) amplifiers for monitoring optical power in ONET applications. APPLICATIONS D D D D D D D D D OPTICAL NETWORKING TRANSIMPEDANCE AMPLIFIERS INTEGRATORS ACTIVE FILTERS A/D CONVERTER DRIVERS I/V CONVERTER FOR DACs HIGH PERFORMANCE AUDIO PROCESS CONTROL TEST EQUIPMENT OPAx727 AND OPAx728 RELATED PRODUCTS FEATURES PRODUCT 20MHz, 3mV, 4µV/°C (non-etrim version of OPA727) 20MHz, 3mV, 4µV/°C, Shutdown (non-etrim version of OPA728) OPA725 OPA726 +12V OPA727 λ VOUT Optimized for single-supply operation up to 12V, the input common-mode range extends to GND for true single-supply functionality. The output swings to within 150mV of the rails, maximizing dynamic range. The low quiescent current of 4.3mA makes it well-suited for use in battery-operated equipment. The OPA728 shutdown version reduces the quiescent current to typically 6µA and features a reference pin for easy shutdown operation with standard CMOS logic in dual-supply applications. For ease of use, the OPA727 and OPA728 op amp families are fully specified and tested over the supply range of 4V to 12V. The OPA727 (single) and OPA728 (single with shutdown) are available in MSOP-8 and DFN-8; the OPA2727 (dual) is available in DFN-8 and SO-8, and the quad version OPA4727 will be available Q1’05 in TSSOP-14. All versions are specified for operation from −40°C to +125°C. −VB Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. e-trim is a trademark of Texas Instruments, Incorporated. All other trademarks are the property of their respective owners. Copyright 2004, Texas Instruments Incorporated ! ! www.ti.com "#"$ #"#" %"#"$ "#& www.ti.com SBOS314B − SEPTEMBER 2004 − REVISED DECEMBER 2004 PACKAGE/ORDERING INFORMATION(1) PRODUCT PACKAGE-LEAD PACKAGE DESIGNATOR PACKAGE MARKING MSOP-8 DGK AUE DRB NSF OPA2727 DFN-8 DFN-8(2) DRB NSD OPA2727 OPA4727(2) SO-8 D OPA2727A TSSOP-14 PW OPA4727A MSOP-8 DGK AUF DFN-8 DRB NSG Non-Shutdown OPA727 Shutdown OPA728 (1) For the most current package and ordering information, see the Package Option Addendum located at the end of this datasheet. (2) Available Q1’05. ABSOLUTE MAXIMUM RATINGS(1) Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +13.2V Signal Input Terminals, Voltage(2) . . . . . . . . . −0.5V to (V+) + 0.5V Current(2) . . . . . . . . . . . . . . . . . . . ±10mA Output Short Circuit(3) . . . . . . . . . . . . . . . . . . . . . . . . . Continuous Operating Temperature . . . . . . . . . . . . . . . . . . . . . −55°C to +125°C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . −55°C to +150°C Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Lead Temperature (soldering, 10s) . . . . . . . . . . . . . . . . . . . . +300°C ESD Rating (Human Body Model) . . . . . . . . . . . . . . . . . . . . 2000V (Charged Device Model) . . . . . . . . . . . . . . . . . 1000V (1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not supported. (2) Input terminals are diode-clamped to the power-supply rails. Input signals that can swing more than 0.5V beyond the supply rails should be current limited to 10mA or less. (3) Short-circuit to ground, one amplifier per package. 2 This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. "#"$ #"#" %"#"$ "#& www.ti.com SBOS314B − SEPTEMBER 2004 − REVISED DECEMBER 2004 PIN CONFIGURATIONS OPA727 OPA727 NC (1 ) 1 V+ −IN 2 6 OUT +IN 3 5 NC(1) V− 4 NC(1) 1 8 NC(1) −IN 2 7 +IN 3 V− 4 MSOP−8 DFN−8 OPA728 OPA728 REF (3) 1 V+ −IN 2 6 OUT +IN 3 5 NC(1) V− 4 REF(3) 1 8 Enable −IN 2 7 +IN 3 V− 4 OUT A −IN A +IN A 3 V− 4 Exposed Thermal Die Pad on Underside(2) MSOP−8 DFN−8 OPA2727 OPA2727(4) 1 2 Exposed Thermal Die Pad on Underside(2 ) A B OUT A 1 OUT B −IN A 2 6 −IN B +IN A 3 5 +IN B V− 4 8 V+ 7 Exposed Thermal Die Pad on Underside(2) 8 NC (1 ) 7 V+ 6 OUT 5 NC (1 ) 8 Enable 7 V+ 6 OUT 5 NC (1) 8 V+ 7 OUT B 6 −IN B 5 +IN B DFN−8 SO−8 OPA4727(4) OUT A 1 −IN A 2 14 OUT D A B 13 −IN D +IN A 3 12 +IN D V− 4 11 V+ +IN B 5 10 +IN C −IN B 6 OUT B A B 7 9 −IN C 8 OUT C (1) NC denotes no internal connection. (2) Connect thermal die pad to V−. (3) REF is the reference voltage for ENABLE pin. (4) Available Q1’05. TSSOP−14 3 "#"$ #"#" %"#"$ "#& www.ti.com SBOS314B − SEPTEMBER 2004 − REVISED DECEMBER 2004 ELECTRICAL CHARACTERISTICS: VS = +4V to +12V or VS = ±2V to ±6V Boldface limits apply over the specified temperature range, TA = −40°C to +125°C. At TA = +25°C, RL = 10kΩ connected to VS/2, and VOUT = VS/2, unless otherwise noted. OPA727, OPA728, OPA2727 PARAMETER OFFSET VOLTAGE Input Offset Voltage Drift vs Power Supply Over Temperature Channel Separation, dc INPUT BIAS CURRENT Input Bias Current, OPA727, OPA728 Input Bias Current, OPA2727 Over Temperature Input Offset Current NOISE Input Voltage Noise, f = 0.1Hz to 10Hz Input Voltage Noise Density, f = 10kHz Input Voltage Noise Density, f = 100kHz Input Current Noise Density, f = 1kHz INPUT VOLTAGE RANGE Common-Mode Voltage Range Common-Mode Rejection Ratio Over Temperature CONDITIONS VOS dVOS/dT PSRR MIN VS = ±5V, VCM = 0V 0°C to +85°C −40°C to +125°C VS = ±2V to ±6V, VCM = V− VS = ±2V to ±6V, VCM = V− 4 UNIT 15 0.3 0.6 30 150 1.5 3.0 150 150 µV µV/°C µV/°C µV/V µV/V µV/V ±10 ±100 ±60 ±500 See Typical Characteristics ±10 ±100 IB IOS en en en in VCM CMRR VS = ±6V, VS = ±6V, VS = ±6V, VS = ±6V, VCM = 0V VCM = 0V VCM = 0V VCM = 0V (V−) ≤ VCM ≤ (V+) − 2.5V (V−) ≤ VCM ≤ (V+) − 2.5V (V−) ≤ VCM ≤ (V+) − 3V (V−) ≤ VCM ≤ (V+) − 3V (V−) 86 84 94 84 (V+) − 2.5 94 100 pA pA pA µVPP nV/√Hz nV/√Hz fA/√Hz 10 10 6 2.5 INPUT IMPEDANCE Differential Common-Mode FREQUENCY RESPONSE Gain-Bandwidth Product Slew Rate Settling Time, 0.1% 0.01% Overload Recovery Time Total Harmonic Distortion + Noise MAX 1 Over Temperature OPEN-LOOP GAIN Open-Loop Voltage Gain OPA727, OPA728 Over Temperature OPA2727 Over Temperature OPA727, OPA728 Over Temperature OPA2727 Over Temperature TYP V dB dB dB dB 1011 5 1011 4 Ω pF Ω pF 120 dB dB dB dB dB dB dB dB AOL RL = 100kΩ, 0.15V < VO < (V+) − 0.15V RL = 100kΩ, 0.15V < VO < (V+) − 0.15V RL = 100kΩ, 0.175V < VO < (V+) − 0.175V RL = 100kΩ, 0.175V < VO < (V+) − 0.175V RL = 1kΩ, 0.25V < VO < (V+) − 0.25V RL = 1kΩ, 0.25V < VO < (V+) − 0.25V RL = 2kΩ, 0.25V < VO < (V+) − 0.25V RL = 2kΩ, 0.5V < VO < (V+) − 0.5V 110 100 110 100 106 96 106 96 120 116 116 CL = 20pF GBW SR tS THD+N G = +1 VS = ±6V, 5V Step, G = +1 VS = ±6V, 5V Step, G = +1 VIN • Gain > VS VS = ±6V, VOUT = 2VRMS, RL = 600Ω, G = +1, f = 1kHz 20 30 350 450 50 0.0003 MHz V/µs ns ns ns % "#"$ #"#" %"#"$ "#& www.ti.com SBOS314B − SEPTEMBER 2004 − REVISED DECEMBER 2004 ELECTRICAL CHARACTERISTICS: VS = +4V to +12V or VS = ±2V to ±6V (continued) Boldface limits apply over the specified temperature range, TA = −40°C to +125°C. At TA = +25°C, RL = 10kΩ connected to VS/2, and VOUT = VS/2, unless otherwise noted. OPA727, OPA728, OPA2727 PARAMETER OUTPUT Voltage Output Swing from Rail OPA727, OPA728 Over Temperature OPA2727 Over Temperature OPA727, OPA728 Over Temperature OPA2727 Over Temperature Output Current Short-Circuit Current Capacitive Load Drive Open-Loop Output Impedance CONDITIONS IOUT ISC TEMPERATURE RANGE Specified Range Operating Range Storage Range Thermal Resistance MSOP-8, SO-8 TSSOP-14 DFN-8 RL = 100kΩ, AOL > 110dB RL = 100kΩ, AOL > 100dB RL = 100kΩ, AOL > 110dB RL = 100kΩ, AOL > 100dB RL = 1kΩ, AOL > 106dB RL = 1kΩ, AOL > 96dB RL = 2kΩ, AOL = 106dB RL = 2kΩ, AOL = 96dB VS − VOUT < 1V TYP MAX UNIT 100 150 150 175 175 250 250 250 500 mV mV mV mV mV mV mV mV mA mA 125 200 200 40 ±55 See Typical Characteristics 40 CLOAD f = 1MHz, IO = 0 ENABLE/SHUTDOWN (OPA728) tOFF tON Enable Reference (Ref Pin) Voltage Range VL (amplifier is disabled) VH (amplifier is enabled) Input Bias Current of Enable Pin IQSD POWER SUPPLY Specified Voltage Range Operating Voltage Range Quiescent Current (per amplifier) Over Temperature MIN 5 80 V− (V+) − 2 < VDGND+0.8V > VDGND +2V 5 6 Amplifier Disabled VS VS IQ 4 12 3.5 to 13.2 4.3 IO = 0 15 −40 −55 −55 Ω µs µs V V V pA µA 6.5 6.5 V V mA mA +125 +125 +150 °C °C °C qJA 150 100 46 °C/W °C/W °C/W 5 "#"$ #"#" %"#"$ "#& www.ti.com SBOS314B − SEPTEMBER 2004 − REVISED DECEMBER 2004 TYPICAL CHARACTERISTICS At TA = +25°C, VS = ±6V, RL = 10kΩ connected to VS/2, and VOUT = VS/2, unless otherwise noted. COMMON−MODE REJECTION RATIO vs FREQUENCY GAIN AND PHASE vs FREQUENCY 180 180 160 160 140 140 100 100 80 80 60 60 40 20 20 0 0 −20 100 1k 10k 100k 1M 10M 80 60 40 40 Gain 10 CMRR (dB) 120 Phase 100 Phase (_) Gain (dB) 120 120 20 (V−) ≤ VCM ≤ (V+) − 2V −20 100M 0 10 100 1k Frequency (Hz) 10k 100k 1M 10M Frequency (Hz) POWER−SUPPLY REJECTION RATIO vs FREQUENCY MAXIMUM OUTPUT VOLTAGE vs FREQUENCY 7 100 VS = ±6V 90 6 80 5 Amplitude (V) PSRR (dB) 70 60 50 40 30 4 3 Indicates maximum output for no visible distortion. 2 20 1 10 0 0 100 1k 10k 100k 1M 10M 100M 10M 1M Frequency (Hz) CHANNEL SEPARATION vs FREQUENCY INPUT VOLTAGE NOISE SPECTRAL DENSITY vs FREQUENCY 140 1000 120 Voltage Noise (nV/√Hz) Channel Separation (dB) 100k 10k Frequency (Hz) 100 80 60 40 100 10 20 1k 10k 100k 1M Frequency (Hz) 6 10M 100M 1 10 100 1k 10k 100k Frequency (Hz) 1M 10M "#"$ #"#" %"#"$ "#& www.ti.com SBOS314B − SEPTEMBER 2004 − REVISED DECEMBER 2004 TYPICAL CHARACTERISTICS (continued) At TA = +25°C, VS = ±6V, RL = 10kΩ connected to VS/2, and VOUT = VS/2, unless otherwise noted. OFFSET CURRENT vs TEMPERATURE INPUT BIAS CURRENT vs COMMON−MODE VOLTAGE 100k +125_ C 10k 1k +85_ C 1k 100 +25_C 100 10 IOS (pA) Input Bias Current (pA) 10k IB < ±10pA −10 1 +25_ C −100 −1k 0.1 +85_C −10k +125_C −100k −6 10 0.01 −4 −2 0 2 4 −50 6 −25 0 25 50 75 100 125 150 Temperature (_ C) Common−Mode Voltage (V) OPEN−LOOP GAIN vs TEMPERATURE POWER−SUPPLY REJECTION RATIO vs TEMPERATURE 140 120 130 RL = 100kΩ PSRR (dB) AOL (dB) 120 110 RL = 1kΩ 100 100 80 90 80 −50 −25 60 0 25 50 75 100 125 150 −50 −25 0 100 4 90 3 IQ (mA) CMRR (dB) 5 80 2 70 1 0 50 75 Temperature (_ C) 50 75 100 125 150 QUIESCENT CURRENT vs TEMPERATURE COMMON−MODE REJECTION RATIO vs TEMPERATURE 110 (V−) ≤ VCM ≤ (V+) − 2V 60 −50 −25 0 25 25 Temperature (_C) Temperature (_ C) 100 125 150 −50 −25 0 25 50 75 100 125 150 Temperature (_C) 7 "#"$ #"#" %"#"$ "#& www.ti.com SBOS314B − SEPTEMBER 2004 − REVISED DECEMBER 2004 TYPICAL CHARACTERISTICS (continued) At TA = +25°C, VS = ±6V, RL = 10kΩ connected to VS/2, and VOUT = VS/2, unless otherwise noted. SHORT−CIRCUIT CURRENT vs TEMPERATURE 90 4.8 80 4.6 70 Short−Circuit (mA) I Q per Amplifier (mA) QUIESCENT CURRENT vs SUPPLY VOLTAGE 5.0 4.4 4.2 4.0 3.8 3.6 Sourcing 60 50 Sinking 40 30 20 3.4 10 3.2 0 3.0 3 4 5 6 7 8 9 10 11 12 13 14 −50 −25 0 SHORT−CIRCUIT CURRENT vs SUPPLY VOLTAGE 75 100 125 6 Sourcing 80 150 −40_ C 4 70 Output Voltage (V) Short−Circuit Current (mA) 50 OUTPUT VOLTAGE SWING vs OUTPUT CURRENT 90 60 Sinking 50 40 30 2 25_C 125_C 0 −2 20 −4 10 −40_C −6 13.5 12.5 11.5 10.5 9.5 8.5 7.5 6.5 5.5 4.5 3.5 0 0 10 20 30 40 50 60 70 80 Output Current (mA) Supply Voltage (V) SETTLING TIME vs GAIN TOTAL HARMONIC DISTORTION + NOISE vs FREQUENCY 5000 0.01 RL = 600Ω VOUT = 2Vrms BW = 80kHz 4500 4000 Settling Time (ns) THD + Noise (%) 25 Temperature (_ C) Supply Voltage (V) 0.001 3500 3000 2500 2000 1500 0.01% 1000 0.1% 500 0 0.0001 10 100 1k Frequency (Hz) 8 10k 100k 1 10 Noninverting Gain (V/V) 100 "#"$ #"#" %"#"$ "#& www.ti.com SBOS314B − SEPTEMBER 2004 − REVISED DECEMBER 2004 TYPICAL CHARACTERISTICS (continued) At TA = +25°C, VS = ±6V, RL = 10kΩ connected to VS/2, and VOUT = VS/2, unless otherwise noted. OFFSET VOLTAGE PRODUCTION DISTRIBUTION SMALL−SIGNAL OVERSHOOT vs CAPACITIVE LOAD 90 VS = ±5V 80 60 Population Overshoot (%) 70 G = +1 50 40 G = −1 CF = 3pF 30 20 G = +5 CF = 1pF 10 10 100 −150 −140 −130 −120 −110 −100 − 90 − 80 − 70 − 60 − 50 − 40 − 30 − 20 − 10 0 10 20 30 40 50 60 70 80 90 10 0 11 0 12 0 13 0 14 0 15 0 0 1000 Capacitive Load (pF) Offset Voltage (µV) OFFSET VOLTAGE DRIFT PRODUCTION DISTRIBUTION (−40_ C to +125_ C) OFFSET VOLTAGE DRIFT PRODUCTION DISTRIBUTION (0_C to +85_C) VS = ±5V Population Population VS = ±5V 0 0 .1 0.2 0.3 0 .4 0.5 0 .6 0 .7 0 .8 0.9 1.0 1.1 1 .2 1 .3 1.4 1.5 0 0.2 0.4 0.6 0.8 1.0 1.2 1 .4 1.6 1.8 2.0 2 .2 2.4 2 .6 2.8 3.0 Offset Voltage Drift (µV/_C) Offset Voltage Drift (µV/_C) OFFSET VOLTAGE vs TEMPERATURE 300 SMALL−SIGNAL STEP RESPONSE VS = ±5V G = +1 RL = 10kΩ CL = 20pF 100 4σ 10mV/div Offset Voltage (µV) 200 0 −100 4σ −200 5 Representative Units Shown −300 −50 −25 0 25 50 Temperature (_ C) 75 100 125 100ns/div 9 "#"$ #"#" %"#"$ "#& www.ti.com SBOS314B − SEPTEMBER 2004 − REVISED DECEMBER 2004 TYPICAL CHARACTERISTICS (continued) At TA = +25°C, VS = ±6V, RL = 10kΩ connected to VS/2, and VOUT = VS/2, unless otherwise noted. LARGE−SIGNAL STEP RESPONSE SMALL−SIGNAL STEP RESPONSE G = +1 RL = 10kΩ CL = 20pF CF = 2pF CF = 3pF 1V/div 10mV/div CF = 4pF CF G = −1 RF 10kΩ 10kΩ O P A 7 27 CL 20pF 400ns/div 200ns/div LARGE−SIGNAL STEP RESPONSE 1V/div CF 4pF G = −1 RF Ω 10 kΩ 10kΩ OPA727 CL 20pF 400ns/div 10 "#"$ #"#" %"#"$ "#& www.ti.com SBOS314B − SEPTEMBER 2004 − REVISED DECEMBER 2004 APPLICATIONS INFORMATION The OPA727 and OPA728 family of op amps use e-trim, an adjustment to offset voltage and temperature drift made during the final steps of manufacturing after the plastic molding is completed. This compensates for performance shifts that can occur during the molding process. Through e-trim, the OPA727 and OPA728 deliver excellent offset voltage (150µV max) and extremely low offset voltage drift (1.5µV/°C). Additionally, these 20MHz CMOS op amps have a fast slew rate, low noise, and excellent PSRR, CMRR, and AOL. They can operate on typically 4.3mA quiescent current from a single (or split) supply in the range of 4V to 12V (±2V to ±6V), making them highly versatile and easy to use. They are stable in a unity-gain configuration. a) Single−Supply Configuration Enable +12V Digital Logic OPA728 DGND b) Dual−Supply Configuration Enable Power-supply pins should be bypassed with 1nF ceramic capacitors in parallel with 1µF tantalum capacitors. +5V Digital Logic OPA728 OPERATING VOLTAGE OPA727 series op amps require approximately 4.3mA quiescent current. The enable/shutdown feature of the OPA728 allows the op amp to be shut off to reduce this current to approximately 6µA. The enable/shutdown input is referenced to the Enable Reference Pin, DGND (see Pin Configurations). This pin can be connected to logic ground in dual-supply op amp configurations to avoid level-shifting the enable logic signal, as shown in Figure 1. The Enable Reference Pin voltage, VDGND, must not exceed (V+) − 2V. It may be set as low as V−. The amplifier is enabled when the Enable Pin voltage is greater than VDGND + 2V. The amplifier is disabled (shutdown) if the Enable Pin voltage is less than VDGND + 0.8V. The Enable Pin is connected to internal pull-up circuitry and will enable the device if left unconnected. VO Ref OPA727 series op amps are specified from 4V to 12V supplies over a temperature range of −40°C to +125°C. They will operate well in ±5V or +5V to +12V power-supply systems. Parameters that vary significantly with operating voltage or temperature are shown in the Typical Characteristics. ENABLE/SHUTDOWN VO Ref DGND −5V Figure 1. Enable Reference Pin Connection for Single- and Dual-Supply Configurations INPUT OVER-VOLTAGE PROTECTION Device inputs are protected by ESD diodes that will conduct if the input voltages exceed the power supplies by more than approximately 300mV. Momentary voltages greater than 300mV beyond the power supply can be tolerated if the current is limited to 10mA. This is easily accomplished with an input resistor in series with the op amp, as shown in Figure 2. The OPA727 series features no phase inversion when the inputs extend beyond supplies, if the input is current limited. V+ I OVERLOAD COMMON-MODE VOLTAGE RANGE The input common-mode voltage range of the OPA727 and OPA728 series extends from V− to (V+) − 2.5V. Common-mode rejection is excellent throughout the input voltage range from V− to (V+) − 3V. CMRR decreases somewhat as the common-mode voltage extends to (V+) − 2.5V, but remains very good and is tested throughout this range. See the Electrical Characteristics table for details. 10mA max R VOUT OPA727 VIN V− Figure 2. Input Current Protection for Voltages Exceeding the Supply Voltage 11 "#"$ #"#" %"#"$ "#& www.ti.com SBOS314B − SEPTEMBER 2004 − REVISED DECEMBER 2004 RAIL-TO-RAIL OUTPUT A class AB output stage with common-source transistors is used to achieve rail-to-rail output. This output stage is capable of driving heavy loads connected to any point between V+ and V−. For light resistive loads ( > 100kΩ ), the output voltage can swing to 150mV from the supply rail, while still maintaining excellent linearity (AOL > 110dB). With 1kΩ resistive loads, the output is specified to swing to within 250mV from the supply rails with excellent linearity (see the Typical Characteristics curve, Output Voltage Swing vs Output Current). CAPACITIVE LOAD AND STABILITY Capacitive load drive is dependent upon gain and the overshoot requirements of the application. Increasing the gain enhances the ability of the amplifier to drive greater capacitive loads (see the Typical Characteristics curve, Small-Signal Overshoot vs Capacitive Load). One method of improving capacitive load drive in the unity-gain configuration is to insert a 10Ω to 20Ω resistor inside the feedback loop, as shown in Figure 3. This reduces ringing with large capacitive loads while maintaining DC accuracy. V+ RS 20Ω VOUT OPA727 VIN CL +5V +5V 75Ω VIN ±2.5V OPA727 330pF −5V AIN ADS8342 16−Bit ADC Common −5V Figure 4. OPA727 Driving an ADC TRANSIMPEDANCE AMPLIFIER Wide bandwidth, low input bias current, and low input voltage and current noise make the OPA727 an ideal wideband photodiode transimpedance amplifier. Lowvoltage noise is important because photodiode capacitance causes the effective noise gain of the circuit to increase at high frequency. The key elements to a transimpedance design, as shown in Figure 5, are the expected diode capacitance (CD), which should include the parasitic input common-mode and differential-mode input capacitance (4pF + 5pF for the OPA727); the desired transimpedance gain (RF); and the GBW for the OPA727 (20MHz). With these three variables set, the feedback capacitor value (CF) can be set to control the frequency response. CF includes the stray capacitance of RF, which is 0.2pF for a typical surface-mount resistor. RL CF(1) < 1pF Figure 3. Series Resistor in Unity-Gain Buffer Configuration Improves Capacitive Load Drive RF 10MΩ DRIVING FAST 16-BIT ADCs The OPA727 series is optimized for driving fast 16-bit ADCs such as the ADS8342. The OPA727 op amps buffer the converter input capacitance and resulting charge injection, while providing signal gain. Figure 4 shows the OPA727 in a single-ended method of interfacing to the ADS8342 16-bit, 250kSPS, 4-channel ADC with an input range of ±2.5V. The OPA727 has demonstrated excellent settling time to the 16-bit level within the 600ns acquisition time of the ADS8342. The RC filter, shown in Figure 4, has been carefully tuned for best noise and settling performance. It may need to be adjusted for different op amp configurations. Please refer to the ADS8342 data sheet (available for download at www.ti.com) for additional information on this product. 12 +5V λ CD OPA727 VOUT −5V NOTE: (1) CF is optional to prevent gain peaking. It includes the stray capacitance of RF. Figure 5. Dual-Supply Transimpedance Amplifier "#"$ #"#" %"#"$ "#& www.ti.com SBOS314B − SEPTEMBER 2004 − REVISED DECEMBER 2004 To achieve a maximally-flat, 2nd-order Butterworth frequency response, the feedback pole should be set to: 1 + 2pR FCF GBW Ǹ4pR C F (1) D Bandwidth is calculated by: f *3dB + GBW Hz Ǹ2pR C F (2) D For even higher transimpedance high-speed CMOS OPA380 (90MHz (100MHz GBW), OPA300 (180 MHz (200MHz GBW), or OPA656, OPA657 may be used. bandwidth, the GBW), OPA354 GBW), OPA355 (400MHz GBW) For single-supply applications, the +IN input can be biased with a positive dc voltage to allow the output to reach true zero when the photodiode is not exposed to any light, and respond without the added delay that results from coming out of the negative rail. (Refer to Figure 6.) This bias voltage also appears across the photodiode, providing a reverse bias for faster operation. For additional information, refer to Application Bulletin SBOA055, Compensate Transimpedance Amplifiers Intuitively, available for download at www.ti.com. OPTIMIZING THE TRANSIMPEDANCE CIRCUIT To achieve the best performance, components should be selected according to the following guidelines: 1. For lowest noise, select RF to create the total required gain. Using a lower value for RF and adding gain after the transimpedance amplifier generally produces poorer noise performance. The noise produced by RF increases with the square-root of RF, whereas the signal increases linearly. Therefore, signal-to-noise ratio is improved when all the required gain is placed in the transimpedance stage. 2. Minimize photodiode capacitance and stray capacitance at the summing junction (inverting input). This capacitance causes the voltage noise of the op amp to be amplified (increasing amplification at high frequency). Using a low-noise voltage source to reverse-bias a photodiode can significantly reduce its capacitance. Smaller photodiodes have lower capacitance. Use optics to concentrate light on a small photodiode. 3. Noise increases with increased bandwidth. Limit the circuit bandwidth to only that required. Use a capacitor across the RF to limit bandwidth, even if not required for stability. 4. Circuit board leakage can degrade the performance of an otherwise well-designed amplifier. Clean the circuit board carefully. A circuit board guard trace that encircles the summing junction and is driven at the same voltage can help control leakage. CF(1) < 1pF RF 10MΩ V+ λ OPA727 VOUT +VBias NOTE: (1) CF is optional to prevent gain peaking. It includes the stray capacitance of RF. For additional information, refer to the Application Bulletins Noise Analysis of FET Transimpedance Amplifiers (SBOA060), and Noise Analysis for High-Speed Op Amps (SBOA066), available for download at the TI web site. Figure 6. Single-Supply Transimpedance Amplifier 13 "#"$ #"#" %"#"$ "#& www.ti.com SBOS314B − SEPTEMBER 2004 − REVISED DECEMBER 2004 C3 2.2nF C1 1nF R1 1.93kΩ R2 15.9kΩ 1/2 OPA2727 C2 330pF R3 2.07kΩ R4 22.3kΩ 1/2 OPA2727 VO C4 100pF DC Gain = 1 Cutoff Frequency = 50kHz NOTE: FilterPro is a low-pass filter design program available for download at no cost from TI’s web site (www.ti.com). The program can be used to determine component values for other cutoff frequencies or filter types. Figure 7. Four-Pole Butterworth Sallen-Key Low-Pass Filter DFN PACKAGE LAYOUT GUIDELINES The OPA727 series uses the 8-lead DFN (also known as SON), which is a QFN package with lead contacts on only two sides of the bottom of the package. This leadless, near-chip-scale package maximizes board space and enhances thermal and electrical characteristics through an exposed pad. The leadframe die pad should be soldered to a thermal pad on the PCB. A mechanical data sheet showing an example layout is attached at the end of this data sheet. Refinements to this layout may be required based on assembly process requirements. Mechanical drawings located at the end of this data sheet list the physical dimensions for the package and pad. The five holes in the landing pattern are optional, and are intended for use with thermal vias that connect the leadframe die pad to the heatsink area on the PCB. DFN packages are physically small, have a smaller routing area, improved thermal performance, and improved electrical parasitics, with a pinout scheme that is consistent with other commonly-used packages, such as SO and MSOP. Additionally, the absence of external leads eliminates bent-lead issues. The DFN package can be easily mounted using standard printed circuit board (PCB) assembly techniques. See Application Note, QFN/SON PCB Attachment (SLUA271) and Application Report, Quad Flatpack No-Lead Logic Packages (SCBA017), both available for download at www.ti.com. The exposed leadframe die pad on the bottom of the package should be connected to V−. 14 Soldering the exposed pad significantly improves board-level reliability during temperature cycling, key push, package shear, and similar board-level tests. Even with applications that have low-power dissipation, the exposed pad must be soldered to the PCB to provide structural integrity and long-term reliability. PACKAGE OPTION ADDENDUM www.ti.com 22-Feb-2005 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Eco Plan (2) Qty OPA727AIDGKR ACTIVE MSOP DGK 8 2500 None CU NIPDAU Level-3-240C-168 HR OPA727AIDGKT ACTIVE MSOP DGK 8 250 None CU NIPDAU Level-3-240C-168 HR OPA727AIDRBR ACTIVE SON DRB 8 3000 None CU NIPDAU Level-3-260C-168 HR OPA727AIDRBT ACTIVE SON DRB 8 250 None CU NIPDAU Level-3-260C-168 HR OPA728AIDGKR ACTIVE MSOP DGK 8 2500 None CU NIPDAU Level-3-240C-168 HR Lead/Ball Finish MSL Peak Temp (3) OPA728AIDGKT ACTIVE MSOP DGK 8 250 None CU NIPDAU Level-3-240C-168 HR OPA728AIDRBR ACTIVE SON DRB 8 3000 None CU NIPDAU Level-3-260C-168 HR OPA728AIDRBT ACTIVE SON DRB 8 250 None CU NIPDAU Level-3-260C-168 HR (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - May not be currently available - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. None: Not yet available Lead (Pb-Free). Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Green (RoHS & no Sb/Br): TI defines "Green" to mean "Pb-Free" and in addition, uses package materials that do not contain halogens, including bromine (Br) or antimony (Sb) above 0.1% of total product weight. (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDECindustry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. 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