DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D122 BYD71 series Ultra fast low-loss controlled avalanche rectifiers Product specification Supersedes data of 1996 May 24 1996 Sep 19 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers BYD71 series FEATURES DESCRIPTION • Glass passivated Cavity free cylindrical SOD91 glass package through Implotec(1) technology. This package is • High maximum operating temperature hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. (1) Implotec is a trademark of Philips. • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability a k • Available in ammo-pack. MAM196 Fig.1 Simplified outline (SOD91) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR PARAMETER CONDITIONS MIN. BYD71A − 50 V BYD71B − 100 V BYD71C − 150 V BYD71D − 200 V BYD71E − 250 V BYD71F − 300 V BYD71G − 400 V − 50 V continuous reverse voltage BYD71B − 100 V BYD71C − 150 V BYD71D − 200 V BYD71E − 250 V BYD71F − 300 V BYD71G − 400 V Ttp = 55 °C; lead length = 10 mm; see Figs 2 and 3; averaged over any 20 ms period; see also Figs 10 and 11 − 0.56 A − 0.54 A Tamb = 60 °C; PCB mounting (see Fig.16); see Figs 4 and 5; averaged over any 20 ms period; see also Figs 10 and 11 − 0.43 A − 0.41 A average forward current BYD71A to D BYD71E to G IF(AV) UNIT repetitive peak reverse voltage BYD71A IF(AV) MAX. average forward current BYD71A to D BYD71E to G 1996 Sep 19 2 Not recommended for new designs Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers SYMBOL IFRM IFRM BYD71 series PARAMETER MIN. MAX. BYD71A to D − 4.7 A BYD71E to G − 5.0 A BYD71A to D − 3.7 A BYD71E to G − 3.9 A − 7 A BYD71A to D − 250 W BYD71E to G − 150 W repetitive peak forward current repetitive peak forward current CONDITIONS UNIT Ttp = 55 °C; see Figs 6 and 7 Tamb = 60 °C; see Figs 8 and 9 IFSM non-repetitive peak forward current t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax PRSM non-repetitive peak reverse power dissipation t = 20 µs half sine wave; Tj = Tj max prior to surge Tstg storage temperature −65 +175 °C Tj junction temperature −65 +175 °C MIN. TYP. MAX. − − 0.84 V − − 0.90 V − − 1.05 V − − 1.11 V ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF PARAMETER forward voltage BYD71A to D CONDITIONS IF = 0.5 A; Tj = Tj max; see Figs 12 and 13 BYD71E to G VF forward voltage BYD71A to D IF = 0.5 A; see Figs 12 and 13 BYD71E to G V(BR)R IR trr reverse avalanche breakdown voltage IR = 0.1 mA BYD71A 55 − − V BYD71B 110 − − V BYD71C 165 − − V BYD71D 220 − − V BYD71E 275 − − V BYD71F 330 − − V BYD71G 440 − − V VR = VRRMmax; see Fig 14 − − 1 µA VR = VRRMmax; Tj = 165 °C; see Fig 14 − − 75 µA − − 25 ns − − 50 ns reverse current reverse recovery time BYD71A to D BYD71E to G 1996 Sep 19 UNIT when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A see Fig 18 3 Not recommended for new designs Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers SYMBOL Cd BYD71 series PARAMETER diode capacitance CONDITIONS f = 1 MHz; VR = 0 V; see Fig.15 BYD71A to D BYD71E to G dI R -------dt maximum slope of reverse recovery current BYD71A to D BYD71E to G when switched from IF = 1 A to VR ≥ 30 V and dIF/dt = −1 A/µs; see Fig.17 MIN. TYP. MAX. UNIT − 25 − pF − 20 − pF − − 4 A/µs − − 5 A/µs THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length = 10 mm 180 K/W Rth j-a thermal resistance from junction to ambient note 1 250 K/W Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.16. For more information please refer to the “General Part of associated Handbook”. 1996 Sep 19 4 Not recommended for new designs Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers BYD71 series GRAPHICAL DATA MCD564 MCD565 0.8 0.8 handbook, halfpage handbook, halfpage IF(AV) IF(AV) (A) (A) 0.6 0.6 lead length 10 mm lead length 10 mm 0.4 0.4 0.2 0.2 0 0 0 100 Ttp ( oC) 0 200 100 BYD71A to D a = 1.42; VR = VRRMmax; δ = 0.5. Switched mode application. BYD71E to G a = 1.42; VR = VRRMmax; δ = 0.5. Switched mode application. Fig.2 Fig.3 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). Ttp ( oC) 200 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). MGC526 MGC527 0.6 0.6 handbook, halfpage handbook, halfpage IF(AV) IF(AV) (A) (A) 0.4 0.4 0.2 0.2 0 0 0 100 Tamb ( oC) 200 0 100 BYD71A to D a = 1.42; VR = VRRMmax; δ = 0.5. Device mounted as shown in Fig.16. Switched mode application. BYD71E to G a = 1.42; VR = VRRMmax; δ = 0.5. Device mounted as shown in Fig.16. Switched mode application. Fig.4 Fig.5 Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). 1996 Sep 19 5 Tamb ( oC) 200 Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). Not recommended for new designs Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers BYD71 series MCD563 5.0 handbook, full pagewidth I FRM (A) δ= 0.05 0.1 2.5 0.2 0.5 1 0 10 -2 10 -1 10 0 10 1 10 2 10 3 t p (ms ) 10 4 BYD71A to D Ttp = 55 °C; Rth j-tp = 180 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 200 V. Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. MCD562 5.0 handbook, full pagewidth δ= 0.05 I FRM (A) 0.1 2.5 0.2 0.5 1 0 -2 10 10 -1 10 0 10 1 10 2 10 3 t p ( ms ) 10 4 BYD71E to G Ttp = 55 °C; Rth j-tp = 180 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 400 V. Fig.7 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 1996 Sep 19 6 Not recommended for new designs Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers BYD71 series MCD561 4 handbook, full pagewidth I FRM (A) δ= 0.05 3 0.1 2 0.2 1 0.5 1 0 10-2 10 -1 10 0 10 1 10 2 10 3 t p ( ms ) 10 4 BYD71A to D Tamb = 60 °C; Rth j-a = 250 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 200 V. Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. MCD560 4 handbook, full pagewidth δ= 0.05 I FRM (A) 3 0.1 2 0.2 1 0.5 1 0 10 -2 10 -1 10 0 10 1 10 2 10 3 10 4 t p (ms ) BYD71E to G Tamb = 60 °C; Rth j-a = 250 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 400 V. Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 1996 Sep 19 7 Not recommended for new designs Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers BYD71 series MCD567 0.50 handbook, halfpage MCD566 0.50 handbook, halfpage a=3 a=3 2.5 P (W) 2 P (W) a = 1.57 2.5 a = 1.57 2 1.42 1.42 0.25 0.25 0 0 0 0.25 0 0.50 I F(AV) (A) BYD71A to D a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5. 0.25 0.50 I F(AV) (A) BYD71E to G a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5. Fig.10 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. Fig.11 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. MCD568 MCD569 5 5 handbook, halfpage handbook, halfpage IF (A) 4 IF (A) 4 3 3 2 2 1 1 0 0 0 1 2 3 VF (V) 4 0 1 2 VF (V) 3 BYD71A to D Dotted line: Tj = 175 °C. Solid line: Tj = 25 °C. BYD71E to G Dotted line: Tj = 175 °C. Solid line: Tj = 25 °C. Fig.12 Forward current as a function of forward voltage; maximum values. Fig.13 Forward current as a function of forward voltage; maximum values. 1996 Sep 19 8 Not recommended for new designs Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers BYD71 series MCD582 3 10 handbook, halfpage MCD559 2 10halfpage handbook, IR (µA) C d (pF) 10 2 10 10 A, B, C, D E, F, G 1 1 0 100 Tj ( oC) 10 2 10 1 200 VR (V) 10 3 f = 1 MHz; Tj = 25 °C. VR = VRRMmax. Fig.14 Reverse current as a function of junction temperature; maximum values. Fig.15 Diode capacitance as a function of reverse voltage; typical values. 50 handbook, halfpage IF halfpage dbook, 25 dI F dt 7 t rr 50 10% t dI R dt 100% 2 IR MGC499 3 MGA200 Dimensions in mm. Fig.16 Device mounted on a printed-circuit board. 1996 Sep 19 Fig.17 Reverse recovery definitions. 9 Not recommended for new designs Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers DUT handbook, full pagewidth BYD71 series IF (A) + 10 Ω 0.5 25 V t rr 1Ω 50 Ω 0 t 0.25 0.5 IR (A) MAM057 1 Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns. Source impedance: 50 Ω; tr ≤ 15 ns. Fig.18 Test circuit and reverse recovery time waveform and definition. 1996 Sep 19 10 Not recommended for new designs Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers BYD71 series PACKAGE OUTLINE 3.5 max handbook, full pagewidth 0.55 max 1.7 max 29 min 3.0 max MBC053 29 min Dimensions in mm. The marking band indicates the cathode. Fig.19 SOD91. DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Sep 19 11 Not recommended for new designs