¡ Semiconductor MR27V6402D 1A Preliminary 4,194,304-Word x 16-Bit or 8,388,608-Word x 8-Bit One Time PROM DESCRIPTION The MR27V6402D is a 64Mbit electrically Programmable Read-Only Memory whose configuration can be electrically switched between 4,194,304 word x 16bit and 8,388,608 word x 8bit. The MR27 V6402D operates on a single +3V-3.3V power supply and is TTL compatible. Since the MR27V6402 D operates asynchronously , external clocks are not required , making this device easy-to-use. The MR27V6402D is suitable as large-capacity fixed memory for microcomputers and data terminals. It is manufactured using a CMOS double silicon gate technology and is offered in 44-pin SOP package. FEATURES • 4,194,304 word x 16bit / 8,388,608 word x 8bit electrically switchable configuration • Single +3V-3.3V power supply • Access time 150ns access time (Vcc=+3V) 120ns access time (Vcc=+3.3V) • Input / Output TTL compatible • Three-state output • Package 44-pin plastic SOP (SOP44-P-600-1.27-K) February 1999 1 MR27V6402D PIN CONFIGURATION (TOP VIEW) A21 1 A18 2 44 A20 43 A19 A17 3 A7 4 42 A8 41 A9 A6 5 A5 6 40 A10 39 A11 A4 7 A3 8 38 A12 37 A13 A2 9 A1 10 36 A14 35 A15 A0 11 CE 12 34 A16 33 BYTE/Vpp VSS 13 OE 14 32 VSS 31 D15/A-1 D0 15 D8 16 30 D7 29 D14 D1 17 D9 18 28 D6 27 D13 D2 19 D10 20 26 D5 25 D12 D3 21 D11 22 24 D4 23 VCC 44-pin SOP PIN NAMES FUNCTIONS D15/A-1 Data output / Address input A0-A21 Address input D0-D14 Data output CE Chip enable OE VCC Power supply voltage VSS GND BYTE/VPP Output enable Mode switch / Program power supply voltage 2 MR27V6402D BLOCK DIAGRAM A-1 OE BYTE/VPP CE OE PGM Row Decoder CE Memory Matrix 4,194,304X16-Bit or 8,388,608X8-Bit Column Decoder A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 A16 A17 A18 A19 A20 A21 Address Buffer X8/X16 Switch Multiplexer Output Buffer D0 D2 D1 D4 D3 D6 D5 D8 D7 D10 D9 D12 D11 D14 D13 D15 In 8-bit output mode, these pins are three-stated and pin D15 functions as the A-1 address pin. FUNCTION TABLE MODE CE OE BYTE/VPP READ (16-Bit) L L H READ (8-Bit) L L L OUTPUT DISABLE L H STAND-BY H * PROGRAM L H PROGRAM INHIBIT H H PROGRAM VERIFY H L H L VCC 3.0V to 3.3V H D0 - D7 D8 - D14 DOUT D15/A-1 DOUT Hi-Z L/H Hi-Z * Hi-Z L * DIN 9.75V 4.0V Hi-Z DOUT *: Don't Care 3 MR27V6402D ABSOLUTE MAXIMUM RATINGS Symbol Parameter Operating temperature under bias Topr Storage temperature Tstg Condition Output voltage VO Power supply voltage Program power supply voltage VCC VPP Power dissipation per package PD Unit -55 to 125 °C °C -0.5 to VCC+ 0.5 V -0.5 to VCC +0.5 V -0.5 to 5 V - VI Input voltage Value 0 to 70 relative to VSS - -0.5 to 11.5 V 1.0 W RECOMMENDED OPERATING CONDITIONS (Ta=0 to 70°C) Parameter Symbol VCC power supply voltage VCC VPP power supply voltage VPP Input "H" level VIH Input "L" level VIL Condition VCC=2.7V-3.6V Min. Typ. Max. 2.7 3.6 Unit V -0.5 - VCC+0.5 V 2.2 - VCC+0.5 V -0.5 - 0.6 V Voltage is relative to Vss 4 MR27V6402D ELECTRICAL CHARACTERISTICS (Read operation) DC Characteristics 1 (VCC=3V±0.3V, Ta=0 to 70°C) Symbol ILI Condition VI=0 to Vcc Min. - Typ. - Max. 10 Unit µA ILO VO=0 to Vcc - - 10 µA VCC power supply current (Standby) ICCSC CE=VCC - µA CE=VIH - 50 ICCST 1 mA VCC power supply current (Read) ICCA - 45 mA IPP CE=VIL,OE=VIH tc=150ns VPP=VCC - VPP power supply current - - µA Input "H" level VIH - 2.2 - 10 VCC+0.5 Input "L" level VIL - -0.5 - 0.6 V Output "H" level VOH2 IOH=-200uA - - V Output "L" level VOL2 IOL=1mA VCC-0.4 - - 0.4 V Parameter Input leakage current Output leakage current V Voltage is relative to Vss DC Characteristics 2 (VCC=3.3V±0.3V, Ta=0 to 70°C) Input leakage current Symbol ILI Output leakage current ILO VCC power supply current (Standby) VCC power supply current (Read) Parameter Condition Typ. - Max. 10 Unit VI=0 to Vcc Min. - VO=0 to Vcc - - 10 µA ICCSC CE=VCC - - 50 µA ICCST CE=VIH - - 1 mA ICCA - - 50 mA - - 10 µA VCC+0.5 V V V Input "H" level VIH CE=VIL,OE=VIH tc=120ns VPP=VCC - 2.2 - Input "L" level VIL - -0.5 - Output "H" level VOH2 IOH=-200µA - Output "L" level VOL2 IOL=1mA VCC-0.4 - 0.6 - - 0.4 VPP power supply current IPP µA V Voltage is relative to Vss 5 MR27V6402D AC Characteristics 1 (VCC=3V±0.3V, Ta=0 to 70°C) Parameter Address cycle time Address access time Symbol TC Condition - TACC CE=OE=VIL Min. 150 - Max. - Unit 150 ns ns CE access time TCE OE=VIL - 150 ns OE access time TOE TCHZ CE=VIL - 60 ns Output disable time Output hold time OE=VIL 0 50 ns TOHZ CE=VIL 0 ns TOH CE=OE=VIL 0 45 - Measurement conditions Input signal level Input timing reference level Output load Output timing reference level ns 0V/3V 0.8V/2.0V 100pF 0.8V/2.0V AC Characteristics 2 (VCC=3.3V±0.3V, Ta=0 to 70°C) Symbol Condition Min. - Address access time TC TACC CE=OE=VIL 120 - CE access time TCE OE=VIL - OE access time TOE CE=VIL TCHZ TOHZ Parameter Address cycle time Output disable time Output hold time TOH Measurement conditions Input signal level Input timing reference level Output load Output timing reference level Max. - Unit ns 120 ns 120 ns - 50 ns OE=VIL 0 40 ns CE=VIL CE=OE=VIL 0 35 ns 0 - ns 0V/3V 0.8V/2.0V 100pF 0.8V/2.0V 1.7V 400ohms Output 100pF 6 MR27V6402D TIMING CHART (READ CYCLE) 16-Bit Read Mode (BYTE=VIH) tC A0 - A21 tOH tCE CE tOE tCHZ OE tACC D0 - D15 tOHZ Valid Data Hi-Z Hi-Z 8-Bit Read Mode (BYTE=VIL) tC A-1 - A21 tOH tCE CE tOE tCHZ OE tACC D0 - D7 D8 - D14 tOHZ Valid Data Hi-Z Hi-Z Hi-Z 7 MR27V6402D ELECTRICAL CHARACTERISTICS (Programming operation) DC Characteristics (Ta=25°C±5°C) Symbol ILI Parameter Input leakage current Condition VI=VCC+0.5V VPP power supply current (Program) IPP2 VCC power supply current ICC CE=VIL - Input "H" level VIH - Input "L" level - Output "H" level VIL VOH Output "L" level VOL Program voltage VPP VCC VCC power supply voltage IOH=-400µA IOL=2.1mA - Min. - Typ. - Max. - - 3.0 - -0.5 2.4 - 0.8 - V V - - 0.45 V 9.5 3.9 9.75 10.0 V 4.0 4.1 V 10 Unit µA 50 mA 50 mA VCC+0.5 V Voltage is relative to Vss AC Characteristics (Vcc=4.0V±0.1V,Vpp=9.75V±0.25V,Ta=25°C±5°C) Symbol TAS Condition - OE set-up time TOES - 2 Data set-up time TDS 100 Parameter Address set-up time Min. 100 Typ. - Max. - Unit ns - µs - µs Address hold time TAH - 2 - Data hold time TDH TOHZ - 100 - - 0 - 100 TVS - 2 - - ns ns µs Output float delay from OE ns VPP voltage set-up time Program pulse width TPW - 9 10 11 µs Data valid from OE TOE - - - ns Address hold from OE high TAHO - 0 - 100 - ns Pin Check Function Pin Check Function is to check contact between each device-pin and each socket-lead with EPROM programmer. Setting up address as the following condition call the preprogrammed codes on device outputs. (Vcc=3.3V±0.3V,CE=OE=VIL,BYTE/Vpp=VIH,Ta=25°C±5°C) A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 A16 A17 A18 A19 A20 A21 DATA 0 1 0 1 0 1 0 1 0 VH* 0 1 0 1 0 1 0 0 1 1 0 0 FF00 1 0 1 0 1 0 1 0 1 VH* 1 0 1 0 1 0 1 1 0 0 1 1 00FF Other conditions FFFF * :VH=8V±0.25V 8 MR27V6402D Consecutive Programming Waveforms A0 - A21 tAS tAH tPW CE High OE tDS tDH D0 - D15 Din Din tVS BYTE/VPP Consecutive Program Verify Waveforms A0 - A21 High CE tACC tAHO OE tOE D0 - D15 tOHZ Dout Dout 9.75V BYTE/VPP 9 MR27V6402D Program and Program Verify Cycle Waveforms A0 - A21 tAS tAHO tPW CE tOES OE tOHZ D0 - D15 tOE tDH tDS Din tOHZ Dout 9.75V BYTE/VPP PIN Capacitance (VCC=3.3V, Ta=25°C, f=1MHz) Parameter Input BYTE/VPP Output Symbol CIN1 CIN2 COUT Condition VI=0V VO=0V Typ. - Max. - - 120 - - 15 Min. - Unit 12 pF 10 MR27V6402D Programming / Verify Flow Chart Programming Verify Start Start NO Pin Check Bad insertion NO Pin Check Bad insertion OK OK Address = First location Address = First location VCC=3.0V VPP=3.0V VCC=4.0V VPP=9.75V Verify (One Byte) NG PASS Program 10µs VCC=3.6V VPP=3.6V NO Increment Address Last Address ? Verify (One Byte) YES Address = First location NG PASS Device Passed Device Failed X=0 NG X=X+1 Verify (One Byte) PASS NO Increment Address YES Last Address ? X=2? YES NO VCC=3.0V VPP=3.0V Program 10µs NG Verify (One Byte) PASS Device Passed Device Failed 11 Semiconductor NOTICE The information contained herein can change without notice owing to product and/or technical improvements. Before using the product, please make sure that the information being referred to is up-todate. The outline of action and examples for application circuits described herein have been chosen as an explanation for the standard action and performance of the product. When planning to use the product, please ensure that the external conditions are reflected in the actual circuit, assembly, and program designs. 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