BSC011N03LS OptiMOSTM Power-MOSFET Product Summary Features • Optimized for high performance Buck converter • Very low on-resistance R DS(on) @ V GS=4.5 V • 100% avalanche tested • Superior thermal resistance VDS 30 V RDS(on),max 1.1 mW ID 100 A QOSS 40 nC QG(0V..10V) 72 nC • N-channel • Qualified according to JEDEC1) for target applications PG-TDSON-8 • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Type Package Marking BSC011N03LS PG-TDSON-8 011N03LS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value V GS=10 V, T C=25 °C 100 V GS=10 V, T C=100 °C 100 V GS=4.5 V, T C=25 °C 100 V GS=4.5 V, T C=100 °C 100 V GS=10 V, T A=25 °C, R thJA=50 K/W 2) 37 Unit A Pulsed drain current3) I D,pulse T C=25 °C 400 Avalanche current, single pulse4) I AS T C=25 °C 50 Avalanche energy, single pulse E AS I D=50 A, R GS=25 W 190 mJ Gate source voltage V GS ±20 V 1) J-STD20 and JESD22 Rev. 2.2 page 1 2013-05-14 BSC011N03LS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Power dissipation P tot Value T C=25 °C 96 T A=25 °C, T j, T stg -55 ... 150 IEC climatic category; DIN IEC 68-1 Parameter W 2.5 R thJA=50 K/W 2) Operating and storage temperature Unit °C 55/150/56 Values Symbol Conditions Unit min. typ. max. - - 1.3 top - - 20 6 cm2 cooling area2) - - 50 Thermal characteristics Thermal resistance, junction - case Device on PCB R thJC R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 30 - - Gate threshold voltage V GS(th) V DS=V GS, I D=250 µA 1.2 - 2 Zero gate voltage drain current I DSS V DS=30 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=30 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=30 A - 1.1 1.4 mW V GS=10 V, I D=30 A - 0.9 1.1 0.3 0.6 1.2 W 85 170 - S Gate resistance RG Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=30 A 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See figure 3 for more detailed information Rev. 2.2 page 2 2013-05-14 BSC011N03LS Parameter Values Symbol Conditions Unit min. typ. max. - 4700 6251 - 1500 1995 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 220 - Turn-on delay time t d(on) - 6.7 - Rise time tr - 8.8 - Turn-off delay time t d(off) - 37 - Fall time tf - 6.2 - Gate to source charge Q gs - 11 15 Gate charge at threshold Q g(th) - 7.5 - Gate to drain charge Q gd - 10.3 13 Switching charge Q sw - 14 - Gate charge total Qg - 36 48 Gate plateau voltage V plateau - 2.4 - Gate charge total Qg V DD=15 V, I D=30 A, V GS=0 to 10 V - 72 96 Gate charge total, sync. FET Q g(sync) V DS=0.1 V, V GS=0 to 4.5 V - 29 - Output charge Q oss V DD=15 V, V GS=0 V - 40 53 - - 96 - - 384 V GS=0 V, V DS=15 V, f =1 MHz V DD=15 V, V GS=10 V, I D=30 A, R G,ext=1.6 W pF ns Gate Charge Characteristics5) V DD=15 V, I D=30 A, V GS=0 to 4.5 V nC V nC Reverse Diode Diode continuous forward current IS A T C=25 °C Diode pulse current I S,pulse Diode forward voltage V SD V GS=0 V, I F=30 A, T j=25 °C - 0.8 1 V Reverse recovery charge Q rr V R=15 V, I F=I S, di F/dt =400 A/µs - 20 - nC 4) 5) See figure 13 for more detailed information See figure 16 for gate charge parameter definition Rev. 2.2 page 3 2013-05-14 BSC011N03LS 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 120 120 100 100 80 80 ID [A] Ptot [W] 1 Power dissipation 60 60 40 40 20 20 0 0 0 40 80 120 160 0 40 80 TC [°C] 120 TC [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 160 101 limited by on-state resistance 1 µs 10 µs 102 100 100 µs 0.5 1 ms ZthJC [K/W] 0.2 ID [A] 10 ms 101 DC 0.1 10-1 0.05 0.02 0.01 100 10-1 10-3 10-1 100 101 102 VDS [V] Rev. 2.2 single pulse 10-2 10-6 10-5 10-4 10-3 10-2 10-1 100 tp [s] page 4 2013-05-14 BSC011N03LS 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 800 2 10 V 4.5 V 5V 700 4V 3.2 V 600 1.5 3.5 V 3.5 V RDS(on) [mW] ID [A] 500 400 3.2 V 4V 4.5 V 5V 1 7V 8V 10 V 300 3V 200 0.5 2.8 V 100 0 0 0 1 2 3 0 10 20 VDS [V] 30 40 50 80 100 ID [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 400 350 300 320 250 240 ID [A] gfs [S] 200 160 150 100 80 150 °C 50 25 °C 0 0 0 1 2 3 4 5 VGS [V] Rev. 2.2 0 20 40 60 ID [A] page 5 2013-05-14 BSC011N03LS 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=30 A; V GS=10 V V GS(th)=f(T j); V GS=V DS; I D=250 µA 3 2.5 2.5 2 1.5 VGS(th) [V] RDS(on) [mW] 2 1.5 1 1 typ 0.5 0.5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 Tj [°C] 60 100 140 180 Tj [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 1000 10000 Ciss 25 °C 100 150 °C 103 IF [A] C [pF] Coss 1000 10 Crss 102 1 100 0 10 20 30 VDS [V] Rev. 2.2 0.0 0.5 1.0 1.5 VSD [V] page 6 2013-05-14 BSC011N03LS 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=30 A pulsed parameter: T j(start) parameter: V DD 100 12 15 V 10 6V 24 V 25 °C 100 °C 8 VGS [V] IAV [A] 125 °C 10 6 4 2 1 0 1 10 100 1000 0 10 tAV [µs] 20 30 40 50 60 70 80 Qgate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 34 V GS Qg 32 VBR(DSS) [V] 30 28 26 V gs(th) 24 Q g(th) 22 Q sw Q gs 20 -60 -20 20 60 100 140 Q gate Q gd 180 Tj [°C] Rev. 2.2 page 7 2013-05-14 BSC011N03LS Package Outline PG-TDSON-8 PG-TDSON-8: Outline Rev. 2.2 page 8 2013-05-14 BSC011N03LS Package Outline PG-TDSON-8: Tape Dimensions in mm Rev. 2.2 page 9 2013-05-14 BSC011N03LS Published by Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.2 page 10 2013-05-14