IXYS IXSH24N60 Hiperfast igbt Datasheet

HiPerFASTTM IGBT
IXSH 24N60
IXSH 24N60A
VCES
IC25
VCE(sat)
600 V
600 V
48 A
48 A
2.2 V
2.7 V
Short Circuit SOA Capability
Symbol
Test Conditions
Maximum Ratings
VCES
TJ = 25°C to 150°C
600
V
VCGR
TJ = 25°C to 150°C; RGE = 1 MW
600
V
VGES
Continuous
±20
V
VGEM
Transient
±30
V
IC25
TC = 25°C
48
A
IC90
TC = 90°C
24
A
ICM
TC = 25°C, 1 ms
96
A
SSOA
(RBSOA)
VGE = 15 V, TJ = 125°C, RG = 10 W
Clamped inductive load, L = 100 mH
ICM = 48
@ 0.8 VCES
A
tSC
(SCSOA)
VGE = 15 V, VCE = 360 V, TJ = 125°C
RG = 82 W, non repetitive
10
ms
PC
TC = 25°C
150
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
TJ
Md
Mounting torque
1.13/10 Nm/lb.in.
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Test Conditions
BVCES
IC
= 250 mA, VGE = 0 V
600
VGE(th)
IC
= 1.5 mA, VCE = VGE
3.5
ICES
VCE = 0.8 • VCES
VGE = 0 V
IGES
VCE = 0 V, VGE = ±20 V
VCE(sat)
IC
300
°C
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
C
E
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
• International standard package
JEDEC TO-247 AD
• High frequency IGBT with guaranteed
Short Circuit SOA capability
• 2nd generation HDMOSTM process
• Low VCE(sat)
- for low on-state conduction losses
• MOS Gate turn-on
- drive simplicity
V
6.5
V
200
1
mA
mA
±100
nA
2.2
2.7
V
V
•
•
•
•
•
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Advantages
TJ = 25°C
TJ = 125°C
IXSH 24N60
IXSH 24N60A
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
g
G
Applications
Symbol
= IC90, VGE = 15 V
6
TO-247 AD
• Easy to mount with 1 screw
(isolated mounting screw hole)
• Switching speed for high frequency
applications
• High power density
92809H(11/96)
1-2
IXSH 24N60
IXSH 24N60A
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
IC = IC90; VCE = 10 V,
Pulse test, t £ 300 ms, duty cycle £ 2 %
IC(on)
VGE = 15 V, VCE = 10 V
C ies
13
S
65
A
1800
pF
160
pF
C res
45
pF
Qg
75
90
nC
20
30
nC
35
50
nC
Coes
Qge
VCE = 25 V, VGE = 0 V, f = 1 MHz
9
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Qgc
td(on)
t ri
td(off)
tfi
Eoff
td(on)
t ri
Eon
td(off)
tfi
Eoff
100
ns
Inductive load, TJ = 25°C
200
ns
IC = IC90, VGE = 15 V, L = 100 mH,
VCE = 0.8 VCES, RG = 10 W
450
ns
24N60
500
ns
24N60A
275
ns
24N60A
2.0
mJ
Remarks: Switching times
may increase for
VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V, L = 100 mH
VCE = 0.8 VCES, RG = 10 W
Remarks: Switching times
may increase for
VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
100
ns
200
ns
1.2
mJ
475
ns
24N60
600
ns
24N60A
450
ns
24N60
24N60A
4
3
mJ
mJ
RthJC
RthCK
© 2000 IXYS All rights reserved
TO-247 AD (IXSH) Outline
Dim. Millimeter
Min. Max.
Inches
Min. Max.
A
B
19.81 20.32
20.80 21.46
0.780 0.800
0.819 0.845
C
D
15.75 16.26
3.55 3.65
0.610 0.640
0.140 0.144
E
F
4.32 5.49
5.4
6.2
0.170 0.216
0.212 0.244
G
H
1.65 2.13
4.5
0.065 0.084
0.177
J
K
1.0
1.4
10.8 11.0
0.040 0.055
0.426 0.433
L
M
4.7
0.4
5.3
0.8
0.185 0.209
0.016 0.031
N
1.5 2.49
0.087 0.102
0.83 K/W
0.25
K/W
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
2-2
Similar pages