HiPerFASTTM IGBT IXSH 24N60 IXSH 24N60A VCES IC25 VCE(sat) 600 V 600 V 48 A 48 A 2.2 V 2.7 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 48 A IC90 TC = 90°C 24 A ICM TC = 25°C, 1 ms 96 A SSOA (RBSOA) VGE = 15 V, TJ = 125°C, RG = 10 W Clamped inductive load, L = 100 mH ICM = 48 @ 0.8 VCES A tSC (SCSOA) VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 82 W, non repetitive 10 ms PC TC = 25°C 150 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ Md Mounting torque 1.13/10 Nm/lb.in. Weight Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Test Conditions BVCES IC = 250 mA, VGE = 0 V 600 VGE(th) IC = 1.5 mA, VCE = VGE 3.5 ICES VCE = 0.8 • VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC 300 °C Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. C E G = Gate, E = Emitter, C = Collector, TAB = Collector Features • International standard package JEDEC TO-247 AD • High frequency IGBT with guaranteed Short Circuit SOA capability • 2nd generation HDMOSTM process • Low VCE(sat) - for low on-state conduction losses • MOS Gate turn-on - drive simplicity V 6.5 V 200 1 mA mA ±100 nA 2.2 2.7 V V • • • • • AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies Advantages TJ = 25°C TJ = 125°C IXSH 24N60 IXSH 24N60A IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved g G Applications Symbol = IC90, VGE = 15 V 6 TO-247 AD • Easy to mount with 1 screw (isolated mounting screw hole) • Switching speed for high frequency applications • High power density 92809H(11/96) 1-2 IXSH 24N60 IXSH 24N60A Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = IC90; VCE = 10 V, Pulse test, t £ 300 ms, duty cycle £ 2 % IC(on) VGE = 15 V, VCE = 10 V C ies 13 S 65 A 1800 pF 160 pF C res 45 pF Qg 75 90 nC 20 30 nC 35 50 nC Coes Qge VCE = 25 V, VGE = 0 V, f = 1 MHz 9 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) t ri td(off) tfi Eoff td(on) t ri Eon td(off) tfi Eoff 100 ns Inductive load, TJ = 25°C 200 ns IC = IC90, VGE = 15 V, L = 100 mH, VCE = 0.8 VCES, RG = 10 W 450 ns 24N60 500 ns 24N60A 275 ns 24N60A 2.0 mJ Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG Inductive load, TJ = 125°C IC = IC90, VGE = 15 V, L = 100 mH VCE = 0.8 VCES, RG = 10 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG 100 ns 200 ns 1.2 mJ 475 ns 24N60 600 ns 24N60A 450 ns 24N60 24N60A 4 3 mJ mJ RthJC RthCK © 2000 IXYS All rights reserved TO-247 AD (IXSH) Outline Dim. Millimeter Min. Max. Inches Min. Max. A B 19.81 20.32 20.80 21.46 0.780 0.800 0.819 0.845 C D 15.75 16.26 3.55 3.65 0.610 0.640 0.140 0.144 E F 4.32 5.49 5.4 6.2 0.170 0.216 0.212 0.244 G H 1.65 2.13 4.5 0.065 0.084 0.177 J K 1.0 1.4 10.8 11.0 0.040 0.055 0.426 0.433 L M 4.7 0.4 5.3 0.8 0.185 0.209 0.016 0.031 N 1.5 2.49 0.087 0.102 0.83 K/W 0.25 K/W IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2