PHILIPS BLF6G38-50 Wimax power ldmos transistor Datasheet

BLF6G38-50; BLF6G38LS-50
WiMAX power LDMOS transistor
Rev. 02 — 1 June 2010
Product data sheet
1. Product profile
1.1 General description
50 W LDMOS power transistor for base station applications at frequencies from
3400 MHz to 3800 MHz.
Table 1.
Typical performance
Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.
VDS (V) PL(AV) (W) PL(M)[1] (W) Gp (dB) ηD (%) ACPR885k (dBc) ACPR1980k (dBc)
Mode of operation f (MHz)
1-carrier N-CDMA[2] 3400 to 3600 28
9
70
14
23
−49[3]
−64[3]
[1]
PL(M) stands for peak output power.
[2]
Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the
CCDF. Channel bandwidth is 1.23 MHz.
[3]
Measured within 30 kHz bandwidth.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
„ Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging,
synchronization and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 %
probability on the CCDF. Channel bandwidth is 1.23 MHz) at a frequency of
3400 MHz, 3500 MHz and 3600 MHz, a supply voltage of 28 V, an IDq of 450 mA, a
power gain of 14 dB, a drain efficiency of 23 % and a peak output power of 70 W:
„ Qualified up to a maximum VDS operation of 32 V
„ Suitable for operation in the 3.4 GHz to 3.8 GHz frequency range
„ Integrated ESD protection
„ Excellent ruggedness
„ High efficiency
„ Excellent thermal stability
„ Designed for broadband operation
„ Internally matched for ease of use
„ Low gold plating thickness on leads
„ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
BLF6G38-50; BLF6G38LS-50
NXP Semiconductors
WiMAX power LDMOS transistor
1.3 Applications
„ RF power amplifiers for base stations and multicarrier applications in the
3400 MHz to 3800 MHz frequency range
2. Pinning information
Table 2.
Pinning
Pin
Description
Simplified outline
Graphic symbol
BLF6G38-50 (SOT502A)
1
drain
2
gate
3
source
1
1
[1]
3
2
2
3
sym112
BLF6G38LS-50 (SOT502B)
1
drain
2
gate
3
source
1
1
[1]
3
2
2
3
sym112
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
BLF6G38-50
-
flanged ceramic package; 2 mounting holes; 2 leads
SOT502A
BLF6G38LS-50
-
earless flanged ceramic package; 2 leads
SOT502B
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
BLF6G38-50_BLF6G38LS-50
Product data sheet
Symbol
Parameter
VDS
Conditions
Min
Max
Unit
drain-source voltage
-
65
V
VGS
gate-source voltage
−0.5
+13
V
ID
drain current
-
16.5
A
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
-
200
°C
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 1 June 2010
© NXP B.V. 2010. All rights reserved.
2 of 13
BLF6G38-50; BLF6G38LS-50
NXP Semiconductors
WiMAX power LDMOS transistor
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-case)
thermal resistance from Tcase = 80 °C;
junction to case
PL = 50 W
Type
Typ
Unit
BLF6G38-50
0.9
-
BLF6G38LS-50
0.7
-
6. Characteristics
Table 6.
Characteristics
Tj = 25 °C per section; unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
V(BR)DSS drain-source breakdown voltage
VGS = 0 V; ID = 0.4 mA
65
-
-
V
2
2.4
V
VGS(th)
gate-source threshold voltage
VDS = 10 V; ID = 80 mA
1.4
IDSS
drain leakage current
VGS = 0 V; VDS = 28 V
-
-
2.8
μA
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
11.8
16.4
-
A
IGSS
gate leakage current
VGS = +11 V; VDS = 0 V
-
-
280
nA
gfs
forward transconductance
VDS = 10 V; ID = 2.8 A
-
5.6
-
S
RDS(on)
drain-source on-state resistance VGS = VGS(th) + 3.75 V;
ID = 2.8 A
-
0.18
0.29
Ω
Crs
feedback capacitance
-
1.17
-
pF
VGS = 0 V; VDS = 28 V;
f = 1 MHz
7. Application information
Table 7.
Application information
Mode of operation: 1-carrier N-CDMA; Single carrier N-CDMA with pilot, paging, sync and 6 traffic
channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF; Channel
bandwidth is 1.23 MHz; f1 = 3400 MHz; f2 = 3500 MHz; f3 = 3600 MHz; RF performance at
VDS = 28 V; IDq = 450 mA; Tcase = 25 °C; unless otherwise specified, in a class-AB production
circuit.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
PL(M)
peak output power
PL(AV) = 9 W
65
70
-
W
Gp
power gain
PL(AV) = 9 W
12.5 14
-
dB
RLin
input return loss
PL(AV) = 9 W
-
−10
-
dB
ηD
drain efficiency
PL(AV) = 9 W
20
23
-
%
PL(AV) = 9 W
[1]
−46
−49
-
dBc
ACPR1980k adjacent channel power ratio (1980 kHz) PL(AV) = 9 W
[1]
−62
−64
-
dBc
ACPR885k
[1]
adjacent channel power ratio (885 kHz)
Measured within 30 kHz bandwidth.
7.1 Ruggedness in class-AB operation
The BLF6G38-50 and BLF6G38LS-50 are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
VDS = 28 V; IDq = 450 mA; PL = PL(1dB); f = 3600 MHz.
BLF6G38-50_BLF6G38LS-50
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 1 June 2010
© NXP B.V. 2010. All rights reserved.
3 of 13
BLF6G38-50; BLF6G38LS-50
NXP Semiconductors
WiMAX power LDMOS transistor
7.2 NXP WiMAX signal
7.2.1 WiMAX signal description
Frame duration = 5 ms; bandwidth = 10 MHz; sequency = 1 frame;
frequency band = WCS; sampling rate = 11.2 MHz; n = 8 / 7; G = Tg / Tb = 1 / 8;
FFT = 1024; zone type = PUSC; δ = 97.7 %; number of symbols = 46;
number of subchannels = 30; PAR = 9.5 dB.
Preamble: 1 symbol × 30 subchannels; PL = PL(nom) + 3.86 dB.
Table 8.
Frame structure
Frame contents
Modulation technique
Data length
Zone 0
FCH
2 symbols × 4 subchannels
QPSK1/2
3 bit
Zone 0
data
2 symbols × 26 subchannels
64QAM3/4
692 bit
Zone 0
data
44 symbols × 30 subchannels
64QAM3/4
10000 bit
7.2.2 Graphs
001aah395
5
001aah396
15
Gp
Gp
(dB)
EVM
(%)
30
ηD
(%)
4
13
24
3
11
18
2
9
12
1
7
6
ηD
5
0
0
4
8
12
0
PL(AV) (W)
VDS = 28 V; IDq = 450 mA; f = 3500 MHz.
EVM as a function of average load power;
typical values
BLF6G38-50_BLF6G38LS-50
Product data sheet
0
12
8
PL(AV) (W)
VDS = 28 V; IDq = 450 mA; f = 3500 MHz.
Fig 1.
4
Fig 2.
Power gain and drain efficiency as functions
of average load power; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 1 June 2010
© NXP B.V. 2010. All rights reserved.
4 of 13
BLF6G38-50; BLF6G38LS-50
NXP Semiconductors
WiMAX power LDMOS transistor
001aah397
−20
ACPR
(dBc)
−30
(1)
−40
−50
(2)
(3)
−60
−70
0
4
8
12
PL(AV) (W)
VDS = 28 V; IDq = 450 mA; f = 3500 MHz.
(1)
f = 10 MHz
(2)
f = 20 MHz
(3)
f = 30 MHz
Fig 3.
Adjacent channel power ratio as a function of average load power; typical values
7.3 Single carrier N-CDMA broadband performance at 9 W average
7.3.1 Graphs
001aah398
16
Gp
(dB)
15
26
ηD
(%)
25
Gp
24
14
13
001aah399
−40
ACPR
(dBc)
(1)
(2)
−50
ACPR1500k
23
ηD
ACPR885k
(1)
(2)
22
12
−60
(1)
11
21
10
3400
3450
3500
20
3600
3550
ACPR1980k
(2)
−70
3400
3450
3500
f (MHz)
3550
3600
f (MHz)
VDS = 28 V; IDq = 450 mA; Single Carrier N-CDMA;
PAR = 9.7 dB at 0.01 % probability; IBW = 30 kHz.
VDS = 28 V; IDq = 450 mA; Single Carrier N-CDMA;
PAR = 9.7 dB at 0.01 % probability; IBW = 30 kHz.
(1) Low frequency component
(2) High frequency component
Fig 4.
Power gain and drain efficiency as functions
of frequency; typical values
BLF6G38-50_BLF6G38LS-50
Product data sheet
Fig 5.
Adjacent channel power ratio as a function of
frequency; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 1 June 2010
© NXP B.V. 2010. All rights reserved.
5 of 13
BLF6G38-50; BLF6G38LS-50
NXP Semiconductors
WiMAX power LDMOS transistor
001aah400
18
40
ηD
(%)
Gp
(dB)
16
30
001aah401
−30
ACPR
(dBc)
−40
−50
Gp
14
20
−60
12
(1)
10
ηD
(1)
(2)
ACPR885k
ACPR1500k
−70
(2)
(1)
(2)
ACPR1980k
10
10−1
0
1
102
10
−80
10−1
1
102
10
PL (W)
PL (W)
VDS = 28 V; IDq = 450 mA; f = 3500 MHz; Single Carrier
N-CDMA; PAR = 9.7 dB at 0.01 % probability; Channel
Bandwidth = 1.23 MHz; IBW = 30 kHz.
VDS = 28 V; IDq = 450 mA; f = 3500 MHz; Single Carrier
N-CDMA; PAR = 9.7 dB at 0.01 % probability; Channel
Bandwidth = 1.23 MHz; IBW = 30 kHz.
(1) Low frequency component
(2) High frequency component
Fig 6.
Power gain and drain efficiency as functions
of load power; typical values
Fig 7.
001aah402
16
Adjacent channel power ratio as a function of
load power; typical values
001aah403
1.5
Gp
(dB)
Pi
(W)
15
1.0
(2)
(3)
(2)
(1)
(1)
14
(3)
0.5
13
12
10−1
1
0
10−1
102
10
VDS = 28 V; IDq = 450 mA; Single Carrier N-CDMA;
PAR = 9.7 dB at 0.01 % probability; Channel Bandwidth
= 1.23 MHz; IBW = 30 kHz.
(1) f = 3400 MHz
(2) f = 3500 MHz
(2) f = 3500 MHz
(3) f = 3600 MHz
(3) f = 3600 MHz
Power gain as a function of load power; typical
values
BLF6G38-50_BLF6G38LS-50
Product data sheet
102
10
VDS = 28 V; IDq = 450 mA; Single Carrier N-CDMA;
PAR = 9.7 dB at 0.01 % probability; Channel Bandwidth
= 1.23 MHz; IBW = 30 kHz.
(1) f = 3400 MHz
Fig 8.
1
PL (W)
PL (W)
Fig 9.
Input power as a function of load power;
typical values
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 1 June 2010
© NXP B.V. 2010. All rights reserved.
6 of 13
BLF6G38-50; BLF6G38LS-50
NXP Semiconductors
WiMAX power LDMOS transistor
8. Test information
C8
R2
C10
C9
C4
C7
L1
C6
C3
R1
C1
C2
C5
BLF6G38-50
BLF6G38-50
INPUT-REV 1A
30RF35
NXP
OUTPUT-REV 1A
30RF35
NXP
001aah404
Striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with εr = 3.5 and thickness = 0.76 mm.
See Table 9 for list of components.
Fig 10. Component layout for 3400 MHz to 3600 MHz test circuit
Table 9.
List of components
For test circuit, see Figure 10.
Component
Description
Value
Remarks
C1, C4, C5, C6
multilayer ceramic chip capacitor
10 pF
[1]
C2
multilayer ceramic chip capacitor
0.7 pF
[1]
C3, C8, C9
multilayer ceramic chip capacitor
100 nF
[2]
C7
multilayer ceramic chip capacitor
10 μF; 50 V
[3]
C10
electrolytic capacitor
470 μF; 63 V
R1, R2
SMD resistor
9.1 Ω
L1
ferrite SMD bead
-
Ferroxcube BDS 3/3/4.6-4S2 or equivalent
[1]
American Technical Ceramics type 100A or capacitor of same quality.
[2]
Vishay VJ1206Y104KXB or capacitor of same quality.
[3]
TDK C5750X7R1H106M or capacitor of same quality.
Table 10.
BLF6G38-50_BLF6G38LS-50
Product data sheet
Measured test circuit impedances
f
Zi
Zo
(GHz)
(Ω)
(Ω)
3.4
5.48 − j9.38
12.42 − j4.58
3.5
5.39 − j9.43
10.41 − j5.31
3.6
5.55 − j9.15
14.31 − j7.04
3.8
9.60 − j12.48
17.70 − j11.57
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 1 June 2010
© NXP B.V. 2010. All rights reserved.
7 of 13
BLF6G38-50; BLF6G38LS-50
NXP Semiconductors
WiMAX power LDMOS transistor
9. Package outline
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads
SOT502A
D
A
F
3
D1
U1
B
q
c
C
1
H
L
E1
p
U2
E
w1 M A M B M
A
2
w2 M C M
b
0
5
Q
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
mm
4.72
3.43
12.83
12.57
0.15
0.08
inches
0.186
0.135
0.505 0.006
0.495 0.003
OUTLINE
VERSION
E
E1
F
H
L
p
Q
q
U1
U2
w1
w2
20.02 19.96
19.61 19.66
9.50
9.30
9.53
9.25
1.14
0.89
19.94
18.92
5.33
4.32
3.38
3.12
1.70
1.45
27.94
34.16
33.91
9.91
9.65
0.25
0.51
0.788 0.786
0.772 0.774
0.374 0.375
0.366 0.364
0.067
1.100
0.057
1.345
1.335
0.390
0.380
0.01
0.02
D
D1
0.045 0.785
0.035 0.745
0.210 0.133
0.170 0.123
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
99-12-28
03-01-10
SOT502A
Fig 11. Package outline SOT502A
BLF6G38-50_BLF6G38LS-50
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 1 June 2010
© NXP B.V. 2010. All rights reserved.
8 of 13
BLF6G38-50; BLF6G38LS-50
NXP Semiconductors
WiMAX power LDMOS transistor
Earless flanged LDMOST ceramic package; 2 leads
SOT502B
D
A
F
3
D
D1
c
U1
1
L
H
E1
U2
E
2
w2 M D M
b
0
5
Q
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
mm
4.72
3.43
12.83
12.57
0.15
0.08
inches
0.186
0.135
0.505 0.006
0.495 0.003
OUTLINE
VERSION
E
E1
F
H
L
Q
U1
U2
w2
20.02 19.96
19.61 19.66
9.50
9.30
9.53
9.25
1.14
0.89
19.94
18.92
5.33
4.32
1.70
1.45
20.70
20.45
9.91
9.65
0.25
0.788 0.786
0.772 0.774
0.374 0.375
0.366 0.364
0.045 0.785
0.035 0.745
0.210
0.170
0.067 0.815
0.057 0.805
D
D1
REFERENCES
IEC
JEDEC
JEITA
0.390
0.010
0.380
EUROPEAN
PROJECTION
ISSUE DATE
03-01-10
07-05-09
SOT502B
Fig 12. Package outline SOT502B
BLF6G38-50_BLF6G38LS-50
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 1 June 2010
© NXP B.V. 2010. All rights reserved.
9 of 13
BLF6G38-50; BLF6G38LS-50
NXP Semiconductors
WiMAX power LDMOS transistor
10. Abbreviations
Table 11.
Abbreviations
Acronym
Description
CCDF
Complementary Cumulative Distribution Function
CW
Continuous Wave
EVM
Error Vector Magnitude
FCH
Frame Control Header
FFT
Fast Fourier Transform
IBW
Instantaneous BandWidth
LDMOS
Laterally Diffused Metal-Oxide Semiconductor
LDMOST
Laterally Diffused Metal-Oxide Semiconductor Transistor
N-CDMA
Narrowband Code Division Multiple Access
PAR
Peak-to-Average power Ratio
PUSC
Partial Usage of SubChannels
RF
Radio Frequency
SMD
Surface Mounted Device
VSWR
Voltage Standing-Wave Ratio
WCS
Wireless Communications Service
WiMAX
Worldwide Interoperability for Microwave Access
11. Revision history
Table 12.
Revision history
Document ID
Release date
Data sheet status
Change
notice
Supersedes
BLF6G38-50_BLF6G38LS-50 v.2
20100601
Product data sheet
-
BLF6G38-50_BLF6G38LS-50_1
Modifications:
BLF6G38-50_BLF6G38LS-50_1
BLF6G38-50_BLF6G38LS-50
Product data sheet
•
•
Data sheet status changed from preliminary to product.
Section 12 “Legal information” updated.
20080212
Preliminary data
sheet
-
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 1 June 2010
-
© NXP B.V. 2010. All rights reserved.
10 of 13
BLF6G38-50; BLF6G38LS-50
NXP Semiconductors
WiMAX power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
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damages are based on tort (including negligence), warranty, breach of
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Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
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therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
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NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
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the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
BLF6G38-50_BLF6G38LS-50
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 1 June 2010
© NXP B.V. 2010. All rights reserved.
11 of 13
NXP Semiconductors
BLF6G38-50; BLF6G38LS-50
WiMAX power LDMOS transistor
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BLF6G38-50_BLF6G38LS-50
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 1 June 2010
© NXP B.V. 2010. All rights reserved.
12 of 13
NXP Semiconductors
BLF6G38-50; BLF6G38LS-50
WiMAX power LDMOS transistor
14. Contents
1
1.1
1.2
1.3
2
3
4
5
6
7
7.1
7.2
7.2.1
7.2.2
7.3
7.3.1
8
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Application information. . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation . . . . . . . . . 3
NXP WiMAX signal . . . . . . . . . . . . . . . . . . . . . . 4
WiMAX signal description . . . . . . . . . . . . . . . . . 4
Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Single carrier N-CDMA broadband
performance at 9 W average . . . . . . . . . . . . . . 5
Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Contact information. . . . . . . . . . . . . . . . . . . . . 12
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 1 June 2010
Document identifier: BLF6G38-50_BLF6G38LS-50
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