MBR20045CT thru MBR200100CTR
Silicon Power
Schottky Diode
VRRM = 45 V - 100 V
IF(AV) = 200 A
Features
• High Surge Capability
• Types from 45 V to 100 V VRRM
Twin Tower Package
• Not ESD Sensitive
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
Symbol
Conditions
MBR20045CT(R) MBR20060CT(R) MBR20080CT(R) MBR200100CT(R)
Unit
VRRM
45
60
80
100
V
VRMS
32
42
57
70
V
VDC
Tj
Tstg
45
-55 to 150
-55 to 150
60
-55 to 150
-55 to 150
80
-55 to 150
-55 to 150
100
-55 to 150
-55 to 150
V
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
MBR20045CT(R) MBR20060CT(R) MBR20080CT(R) MBR200100CT(R)
Symbol
Conditions
IF(AV)
TC = 125 °C
200
200
200
200
A
IFSM
tp = 8.3 ms, half sine
1500
1500
1500
1500
A
Maximum forward
voltage (per leg)
VF
IFM = 100 A, Tj = 25 °C
0.70
0.75
0.84
0.84
V
Reverse current at rated
DC blocking voltage
(per leg)
IR
Tj = 25 °C
Tj = 100 °C
Tj = 150 °C
1
10
30
1
10
30
1
10
30
1
10
30
mA
0.45
0.45
0.45
0.45
°C/W
Parameter
Average forward current
(per pkg)
Peak forward surge
current (per leg)
Unit
Thermal characteristics
Thermal resistance,
junction-case, per leg
RΘJC
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MBR20045CT thru MBR200100CTR
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MBR20045CT thru MBR200100CTR
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
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