SPICE MODEL: BC847PN Pb BC847PN Lead-free COMPLEMENTARY PAIR SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • • • Epitaxial Die Construction Two Internally Isolated NPN/PNP Transistors in one package Ultra-Small Surface Mount Package SOT-363 Lead Free/RoHS Compliant (Note 2) A Qualified to AEC-Q101 Standards for High Reliability C1 B2 E2 B C Mechanical Data • • • • • • • • • Case: SOT-363 E1 B1 C2 G H Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C K M Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). J D F L Terminal Connections: See Diagram Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 α Marking (See Page 3): K7P Ordering Information: See Page 2 8° All Dimensions in mm Weight: 0.006 grams (approximate) Maximum Ratings @ TA = 25°C unless otherwise specified Characteristic NPN BC847B Section Symbol Value Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 6.0 V IC 100 mA Peak Collector Current ICM 200 mA Peak Emitter Current IEM 200 mA Collector Current Maximum Ratings @ TA = 25°C unless otherwise specified Characteristic PNP BC857B Section Symbol Value Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -45 V Emitter-Base Voltage VEBO -5.0 V IC -100 mA Peak Collector Current ICM -200 mA Peak Emitter Current IEM -200 mA Collector Current Thermal Characteristics Characteristic Power Dissipation (Note 1) @ TA = 25°C Total Device Thermal Resistance, Junction to Ambient (Note 1) @ TA = 25°C Operating and Storage Temperature Range Symbol Value Unit Pd 200 mW RθJA 625 °C/W Tj, TSTG -65 to +150 °C Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http:/ /www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. DS30278 Rev. 8 - 2 1 of 4 www.diodes.com BC847PN Diodes Incorporated Electrical Characteristics NPN BC847B Section @ TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Collector-Base Breakdown Voltage (Note 3) V(BR)CBO 50 — — V IC = 10µA, IB = 0 Collector-Emitter Breakdown Voltage (Note 3) V(BR)CEO 45 — — V IC = 10mA, IB = 0 Emitter-Base Breakdown Voltage (Note 3) V(BR)EBO 6 — — V IE = 1µA, IC = 0 hFE 200 290 450 — VCE = 5.0V, IC = 2.0mA Collector-Emitter Saturation Voltage (Note 3) VCE(SAT) — 90 200 250 600 mV IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA Base-Emitter Saturation Voltage (Note 3) VBE(SAT) — 700 900 — mV IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA Base-Emitter Voltage (Note 3) VBE(ON) 580 — 660 — 700 720 mV VCE = 5.0V, IC = 2.0mA VCE =5.0V, IC = 10mA ICBO ICBO — — — — 15 5.0 nA µA VCB = 30V VCB = 30V, TA = 150°C fT 100 300 — MHz VCE = 5.0V, IC = 10mA, f = 100MHz CCBO — 3.5 6.0 pF VCB = 10V, f = 1.0MHz NF — 2.0 10 dB VCE = 5V, IC = 200µA, RG = 2.0kΩ, f = 1.0kHz, ∆f = 200Hz DC Current Gain (Note 3) Collector-Cutoff Current (Note 3) Gain Bandwidth Product Collector-Base Capacitance Noise Figure Electrical Characteristics PNP BC857B Section @ TA = 25°C unless otherwise specified Characteristic Test Condition Symbol Min Typ Max Unit Collector-Base Breakdown Voltage (Note 3) V(BR)CBO -50 — — V IC = 10µA, IB = 0 Collector-Emitter Breakdown Voltage (Note 3) V(BR)CEO -45 — — V IC = 10mA, IB = 0 Emitter-Base Breakdown Voltage (Note 3) V(BR)EBO -5 — — V IE = 1µA, IC = 0 hFE 220 290 475 — VCE = 5.0V, IC = 2.0mA -300 -650 mV IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA DC Current Gain (Note 3) Test Condition Collector-Emitter Saturation Voltage (Note 3) VCE(SAT) — -75 -250 Base-Emitter Saturation Voltage (Note 3) VBE(SAT) — -700 -850 — -950 mV IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA Base-Emitter Voltage (Note 3) VBE(ON) -600 — -650 — -750 -820 mV VCE = 5.0V, IC = 2.0mA VCE = 5.0V, IC = 10mA ICBO ICBO — — — — -15 -4.0 nA µA VCB = 30V VCB = 30V, TA = 150°C fT 100 200 — MHz VCE = 5.0V, IC = 10mA, f = 100MHz CCBO — 3 4.5 pF VCB = 10V, f = 1.0MHz NF — — 10 dB VCE = 5V, IC = 200µA, RG = 2.0kΩ, f = 1.0kHz, ∆f = 200Hz Collector-Cutoff Current (Note 3) Gain Bandwidth Product Collector-Base Capacitance Noise Figure Ordering Information (Note 4) Device Packaging Shipping BC847PN-7-F SOT-363 3000/Tape & Reel Notes: 3. Short duration pulse test used to minimize self-heating effect. 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. DS30278 Rev. 8 - 2 2 of 4 www.diodes.com BC847PN YM Marking Information K7P K7P = Product Type Marking Code YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September Date Code Key Year 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 Code M N P R S T U V W X Y Z Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D 250 1000 VCE = 5V TA = 100°C hFE, DC CURRENT GAIN Pd, POWER DISSIPATION (mW) (see Note 1) 200 150 100 TA = 25°C 100 TA = -50°C 10 50 1 0 0 40 80 120 160 200 0.01 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Power Derating Curve (Total Device) 0.5 fT, GAIN BANDWIDTH PRODUCT (MHz) VCE, COLLECTOR-EMITTER SATURATION VOLTAGE (V) 0.4 0.3 0.2 TA = 100°C 0.1 TA = 25°C TA = -50°C 0 0.1 1.0 10 100 TA = 25°C VCE = 10V VCE = 5V VCE = 2V 100 10 10 0.1 100 IC, COLLECTOR CURRENT (mA) Fig. 3, Collector Saturation Voltage vs Collector Current (BC847B) DS30278 Rev. 8 - 2 1.0 IC, COLLECTOR CURRENT (mA) Fig. 2, DC Current Gain vs Collector Current (BC847B) 1000 IC / IB = 20 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) Fig. 4, Gain Bandwidth Product vs Collector Current (BC847B) 3 of 4 www.diodes.com BC847PN 1000 TA = 150°C IC IB = 10 0.4 hFE, DC CURRENT GAIN VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) 0.5 0.3 TA = 25°C TA = 150°C 0.2 0.1 100 VCE = 5V TA = 25°C TA = -50°C 10 TA = -50°C 0 0.1 10 1 1000 100 1 IC, COLLECTOR CURRENT (mA) Fig. 5, Collector Emitter Saturation Voltage vs. Collector Current (BC857B) 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 6, DC Current Gain vs. Collector Current (BC857B) ft, GAIN BANDWIDTH PRODUCT (MHz) 1000 VCE = 5V 100 10 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 7, Gain Bandwidth Product vs Collector Current (BC857B) IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30278 Rev. 8 - 2 4 of 4 www.diodes.com BC847PN