TriQuint AGR09085EU 85 w, 865 mhz-895 mhz, n-channel e-mode, lateral mosfet Datasheet

AGR09085E
85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET
Introduction
Table 1. Thermal Characteristics
The AGR09085E is a high-voltage, laterally diffused
metal oxide semiconductor (LDMOS) RF power transistor suitable for cellular band, code division multiple
access (CDMA), global system for mobile communication (GSM), enhanced data for global evolution
(EDGE), and time division multiple access (TDMA)
single and multicarrier class AB wireless base station
amplifier applications. This device is manufactured
on an advanced LDMOS technology offering stateof-the-art performance, reliability, and best-in-class
thermal resistance. Packaged in an industry-standard package incorporating internal matching and
capable of delivering a minimum output power of
85 W, it is ideally suited for today's RF power amplifier applications.
YLE 1
AGR09085EU (unflanged)
06, STYLE 1
AGR09085EF (flanged)
Figure 1. Available Packages
Features
Typical performance ratings are for IS-95 CDMA,
pilot, sync, paging, and traffic codes 8—13:
— Output power (POUT): 20 W.
— Power gain: 18 dB.
— Efficiency: 28%.
— Adjacent channel power ratio (ACPR) for
30 kHz bandwidth (BW):
(750 kHz offset: –45 dBc).
1.98 MHz offset: –60 dBc).
— Return loss: 10 dB.
High-reliability, gold-metalization process.
Best-in-class thermal resistance.
Internally matched.
High gain, efficiency, and linearity.
Integrated ESD protection.
Si LDMOS.
Industry-standard packages.
85 W minimum output power.
Parameter
Thermal Resistance,
Junction to Case:
AGR09085EU
AGR09085EF
Sym
R
JC
Value
Unit
0.7
0.7
°C/W
Table 2. Absolute Maximum Ratings*
Parameter
Drain-source Voltage
Gate-source Voltage
Drain Current—Continuous
Total Dissipation at TC = 25 °C:
AGR09085EU
AGR09085EF
Derate Above 25 C:
AGR09085EU
AGR09085EF
Operating Junction Temperature
Storage Temperature Range
Sym Value
VDSS
65
VGS –0.5, 15
ID
8.5
PD
TJ
Unit
Vdc
Vdc
Adc
250
250
W
1.43
1.43
200
W/°C
TSTG –65, 150
°C
°C
* Stresses in excess of the absolute maximum ratings can cause
permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at
these or any other conditions in excess of those given in the
operational sections of the data sheet. Exposure to absolute
maximum ratings for extended periods can adversely affect
device reliability.
Table 3. ESD Rating*
AGR09085E
HBM
MM
CDM
Minimum (V)
500
50
1500
Class
1B
A
4
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
taken to avoid exposure to ESD and electrical overstress (EOS)
during all handling, assembly, and test operations. PEAK
Agere Devices
employs a human-body model (HBM), a machine model (MM),
and a charged-device model (CDM) qualification requirement in
order to determine ESD-susceptibility limits and protection
design evaluation. ESD voltage thresholds are dependent on the
circuit parameters used in each of the models, as defined by
JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and
JESD22-C101A (CDM) standards.
Caution: MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be
observed.
AGR09085E
85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: TC = 30 °C.
Table 4. dc Characteristics
Parameter
Symbol
Min
Typ
Max
Unit
Off Characteristics
200 µA)
Drain-source Breakdown Voltage (VGS = 0, ID = 300
V(BR)DSS
65
—
—
Vdc
Gate-source Leakage Current (VGS = 5 V, VDS = 0 V)
IGSS
—
—
2.6
µAdc
Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS = 0 V)
IDSS
—
—
100
8
µAdc
Forward Transconductance (VDS = 10 V, ID = 1 A)
GFS
—
6
—
S
Gate Threshold Voltage (VDS = 10 V, ID = 400 µA)
VGS(TH)
—
—
4.8
Vdc
Gate Quiescent Voltage (VDS = 28 V, IDQ = 800 mA)
VGS(Q)
—
3.6
—
Vdc
Drain-source On-voltage (VGS = 10 V, ID = 1 A)
VDS(ON)
—
0.12
—
Vdc
Symbol
Min
Typ
Max
Unit
Output Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
COSS
—
48
—
pF
Reverse Transfer Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
CRSS
—
2.3
—
pF
On Characteristics
Table 5. RF Characteristics
Parameter
Dynamic Characteristics
Test Fixture)
Functional Tests (in Supplied
Agere Systems
Supplied Test Fixture)
(Test frequencies (f) = 865 MHz, 880 MHz, 895 MHz)
Linear Power Gain
(VDS = 28 V, POUT = 8 W, IDQ = 800 mA)
Output Power
(VDS = 28 V, 1 dB compression, IDQ = 800 mA)
GL
17
18
—
dB
P1dB
85
105
—
W
—
55
—
%
IM3
—
30
—
dBc
VSWRI
—
2:1
—
—
Drain Efficiency
(VDS = 28 V, POUT = P1dB, IDQ = 800 mA)
Third-order Intermodulation Distortion
(100 kHz spacing, VDS = 28 V, POUT = 90 WPEP, IDQ = 800 mA)
Input VSWR
Ruggedness
(VDS = 28 V, POUT = 85 W, IDQ = 800 mA, f = 880 MHz,
VSWR = 10:1, all angles)
—
No degradation in output
power.
AGR09085E
85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET
Test Circuit Illustrations for AGR09085E
R3
VGG
R4
C25
C24
VDD
Z16
FB1
C12 C11
C23
R2
C10
C9
C17 C18 C19 C20 C21 C22
C27
Z17
C8
Z11
Z12
Z13
Z14 C16 Z15
R1
C15
RF OUTPUT
C13 C14
Z1
RF INPUT
C1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z10
Z9
2
1
DUT
3
C2
C3
C4
C7
C5
C6
PINS:
1. DRAIN
2. GATE
3. SOURCE
A. Schematic
2
3
1
Parts List:
Microstrip line: Z1 0.834 in. x 0.066 in.; Z2 0.665 in. x 0.066 in.; Z3 0.290 in. x 0.066 in.; Z4 0.050 in. x 0.180 in.; Z5 0.650 in. x 0.180 in.;
Z6 0.050 in. x 0.800 in.; Z7 0.132 in. x 0.800 in.; Z8 0.105 in. x 0.800 in.; Z9 0.057 in. x 0.800 in.; Z10 0.543 in. x 0.700 in.;
Z11 0.108 in. x 0.700 in.; Z12 0.760 in. x 0.180 in.; Z13 0.200 in. x 0.180 in.; Z14 0.470 in. x 0.066 in.; Z15 0.495 in. x 0.066 in.;
Z16 1.100 in. x 0.050 in.; Z17 1.100 in. x 0.050 in.
ATC ® chip capacitor: C1, C8, C16, C17: 47 pF 100B470JW; C3 2.7 pF 100B2R7BW; C4, C13, C14: 12 pF 100B120JW;
C5, C6, C9, C18: 10 pF 100B100JW; C7 5.6 pF 100B5R6BW.
0603 chip capacitor: C10, C19: 220 pF.
Kemet® chip capacitor: C11, C26: 0.01 µF C1206C103KRAC7800; C12, C20, C23: 0.1 µF C1206C104KRAC7800.
Johanson Giga-Trim® variable capacitor, 27291SL: C2, C15: 0.8 pF to 8 pF.
Sprague ® tantalum chip capacitor: C21, C24, C25, C27: 10 µF, 35 V; C22 22 µF, 35 V.
1206 size chip resistor (0.25 W): R1 (fixed film RM73B2B510J) 51 ; R2, (fixed film RM73B2B563J) 56 k ;
R3 (fixed film RM73B2B120J) 12 ; R4 (fixed film RM73B2B122J) 1.2 k .
Kreger® ferrite bead: FB1 2743D19447.
Taconic® ORCER RF-35: board material, 1 oz. copper, 30 mil thickness, r = 3.5.
B. Component Layout
Figure 2. AGR09085E Test Circuit
AGR 09085 E
85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics
0.11
07
0.
0
45
1.4
0.8
55
0.4
EN
75
T
(+
j
X/
Z
5
0.4
PO
N
CE
CO
M
0.8
RE
AC
TA
N
0
0
1.
U CT
IVE
1.
80
15
0
4
6
f1
IN D
f3
ZL
1.8
2.0
1.4
1.6
1.2
1.0
0.9
0.8
0.7
0.6
0.5
0.3
0.2
0.1
0.4
0.0
0.4
0.2
L OA D < Ð
RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo)
f3
0.4
ZS
0.6
8
0.
0
0.2
TA
1.
-90
f1
o)
jB/ Y
E (NC
V
WA
7
0.1
-160
-85
D
OW A R
HST
N GT
-170
EL E
0.2
0.48
0.49
35
0.2
865 (f1)
880 (f2)
895 (f3)
TA
EP
SC
SU
E
V
Yo)
jB/
E (+
NC
0.6
0.1
MHz (f)
70
0.4
Z0 = 5 Ω
40
0.6
0.2
85
R
I
0.15
0.35
80
0.3
0.0 Ð > W A V EL E
N GTH
S TOW
A RD
0.0
0.49
GEN
ERA
0.48
± 180
TO
170
RÐ
0.4
>
7
1
60
90
,O
o)
T
CI
PA
CA
90
0.
8
0.0
4
0.
5
14
0
70
0.
06
0.
44
13
5 65
0.
43
0.
110
0.14
0.36
0.7
0
12
0.6 60
2
0.4
0.37
1.0
1
0.4
0.13
0.38
0.9
0
0.12
50
0.4
.09
8
0.0
0.39
100
1.2
0.1
ZL Ω
ZS Ω
(Complex Source Impedance) (Complex Optimum Load Impedance)
0.35 – j0.73
1.66 + j1.22
0.35 – j0.77
1.67 + j1.18
0.33 – j0.82
1.69 + j1.14
GATE (2)
ZS
DRAIN (1)
ZL
SOURCE (3)
INPUT MATCH
DUT
OUTPUT MATCH
Figure 3. Series Equivalent Input and Output Impedances
Agere Systems Inc.
AGR09085E
85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics (continued)
0
-10
ACPR (dBc) S
-20
-30
ACP+
-40
ACP-
-50
ALT1+
-60
ALT-70
0.00
5.00
10.00
15.00
20.00
25.00
30.00
35.00
POUT (W)S
TEST CONDITIONS:
VDD = 28 Vdc, IDQ = 0.8 A, TC = 30 °C.
FREQUENCY = 880 MHz; IS-95 CDMA PILOT, PAGING, SYNC, TRAFFIC CODES 8 THROUGH 13; OFFSET 1 = 750 kHz;
OFFSET 2 = 1.98 MHz; OFFSET 1 AND 2 BW = 30 kHz.
19
0
18
-2
17
POWER GAIN
POUT = 100 W
POUT = 10 W
-4
16
-6
15
-8
14
-10
RETURN LOSS
13
-12
12
-14
11
-16
10
860
865
870
875
880
885
890
895
FREQUENCY (MHz)A
TEST CONDITIONS:
VDD = 28 Vdc, IDQ = 0.8 A, TC = 30 °C, WAVEFORM = CW.
Figure 5. Power Gain and Return Loss vs. Frequency
-18
900
INPUT RETURN LOSS (dB)
POWER GAIN (dB) a
Figure 4. ACPR vs. POUT
AGR09085E
85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics (continued)
20
880 MHz
POWER GAIN (dB) dB
18
POWER
16
865 MHz
14
895 MHz
12
10
8
6
4
2
0
0.00
20.00
40.00
60.00
80.00
100.00
POUT (W)Z
120.00
140.00
160.00
TEST CONDITIONS:
VDD = 28 Vdc, IDQ = 0.8 A, TC = 30 °C, WAVEFORM = CW.
Figure 6. Power Gain vs. Power Out
100
160
865 MHz
120
POUT (W) Z
90
880 MHz
100
80
70
895 MHz
POUT
60
80
50
60
865 MHz
40
EFFICIENCY
20
0
0.00
40
0.50
1.00
1.50
30
2.00
2.50
3.00
PIN (W)Z
TEST CONDITIONS:
VDD = 28 Vdc, IDQ = 0.8 A, TC = 30 °C, WAVEFORM = CW.
Figure 7. Power Out and Drain Efficiency vs. Input Power
20
3.50
DRAIN EFFICIENCY (%)Z
140
AGR09085E
85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics (continued)
0.00
-10.00
IMD (dBc)Z
-20.00
-30.00
IM5+/-40.00
IM3+/-
-50.00
-60.00
0.00
IM7+/-
20.00
40.00
60.00
80.00 100.00 120.00 140.00 160.00
POUT (WPEP)Z
TEST CONDITIONS:
VDD = 28 Vdc, IDQ = 0.8 A, TC = 30 °C.
FREQUENCY 1 = 880.0 MHz; FREQUENCY 2 = 880.1 MHz.
Figure 8. 2-Tone IMD vs. POUT
AGR09085E
85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET
Package Dimensions
All dimensions are in inches. Tolerances are ±0.005 in. unless specified.
AGR09085EU
PINS:
1. DRAIN
2. GATE
3. SOURCE
1
1
PEAK DEVICES
AGR09085EU
3
XXXX
3
2
2
AGR09085EF
PINS:
1. DRAIN
2. GATE
3. SOURCE
1
PEAK DEVICES
AGR09085EF
XXXX
2
XXXX - 4 Digit Trace Code
1
3
3
2
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