polyfet rf devices LX141 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 35.0 Watts Single Ended Package Style LX2 "Polyfet"TM process HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE ROHS COMPLIANT features low feedback and output capacitances, resulting in high Ft transistors with high input impedance and high efficiency. o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation Junction to Case Thermal Resistance 100 Watts Maximum Junction Temperature o 1.40 C/W o 200 C DC Drain Current Storage Temperature o o -65 C to 150 C RF CHARACTERISTICS ( SYMBOL PARAMETER MIN Gps Common Source Power Gain η Drain Efficiency VSWR TYP 4.5 A Drain to Source Voltage 110 V 110 V Gate to Source Voltage 20 V 35.0 WATTS OUTPUT ) MAX 16 50 Load Mismatch Tolerance Drain to Gate Voltage 15:1 UNITS TEST CONDITIONS dB Idq = 0.20 A, Vds = 50.0 V, F = 500 MHz % Idq = 0.20 A, Vds = 50.0 V, F = 500 MHz Relative Idq = 0.20 A, Vds = 50.0 V, F = 500 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS V Bvdss Drain Breakdown Voltage Idss Zero Bias Drain Current 1.0 mA Vds = 50.0 V, Vgs = 0V Igss Gate Leakage Current 1 uA Vds = 0V Vgs = 30V Vgs Gate Bias for Drain Current 5 V gM Forward Transconductance 110 2 Ids = 25.00 mA, Vgs = 0V Ids = 0.15 A, Vgs = Vds 1.0 Mho Vds = 10V, Vgs = 5V Rdson Saturation Resistance 0.50 Ohm Vgs = 20V, Ids = 2.00 A Idsat Saturation Current 5.50 Amp Vgs = 20V, Vds = 10V Ciss Common Source Input Capacitance 30.0 pF Vds = 50.0 Vgs = 0V, F = 1 MHz Crss Common Source Feedback Capacitance 0.7 pF Vds = 50.0 Vgs = 0V, F = 1 MHz Coss Common Source Output Capacitance 30.0 pF Vds = 50.0 Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 11/09/2009 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com LX141 POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE L8 1 Die CAPACITANCE L X 1 4 1 : P o u t / G a in vs P in , F re q = 5 0 0 M H z , V D S = 5 0 V , I d q = .2 A 22 P out POUT IN WATTS E ffic ienc y 50% at 40W 18 30 16 20 G ain 14 10 GAIN IN DB 20 40 CAPACITANCE IN PFS 50 100 0 0.5 1 1.5 2 Ciss 10 1 Crss 0.1 12 0 Coss 0 2.5 5 10 15 20 25 30 35 40 45 50 VDS IN VOLTS P IN IN WAT T S IV CURVE ID & GM VS VGS L 8 O N E D IE IV C U R V E L 8 1 D IE 1 0 .0 0 ID & G M 6 Id in amps; Gm in mhos ID IN AMPS 5 4 3 2 Id 1 .0 0 gM 1 0 0 2 vg=2 v 4 6 V g =4 v 8 10 12 V D S IN V O L T S V g =6 v vg=8 v 14 16 vg =10 v 18 vg =1 2v 20 0 .1 0 0 2 4 6 8 10 12 V g s in V o lts Zin Zout PACKAGE DIMENSIONS IN INCHES Tolerance .XX +/-0.01 POLYFET RF DEVICES .XXX +/-.005 inches REVISION 11/09/2009 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com