SEMICONDUCTOR TECHNICAL DATA The MC74VHC04 is an advanced high speed CMOS inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer output which provides high noise immunity and stable output. The inputs tolerate voltages up to 7V, allowing the interface of 5V systems to 3V systems. • • • • • • • • • • • D SUFFIX 14–LEAD SOIC PACKAGE CASE 751A–03 High Speed: tPD = 3.8ns (Typ) at VCC = 5V Low Power Dissipation: ICC = 2µA (Max) at TA = 25°C High Noise Immunity: VNIH = VNIL = 28% VCC Power Down Protection Provided on Inputs Balanced Propagation Delays Designed for 2V to 5.5V Operating Range Low Noise: VOLP = 0.8V (Max) Pin and Function Compatible with Other Standard Logic Families Latchup Performance Exceeds 300mA ESD Performance: HBM > 2000V; Machine Model > 200V Chip Complexity: 36 FETs or 9 Equivalent Gates DT SUFFIX 14–LEAD TSSOP PACKAGE CASE 948G–01 M SUFFIX 14–LEAD SOIC EIAJ PACKAGE CASE 965–01 LOGIC DIAGRAM A1 A2 A3 1 2 3 4 5 6 ORDERING INFORMATION Y1 MC74VHCXXD MC74VHCXXDT MC74VHCXXM Y2 Y3 FUNCTION TABLE Y=A A4 A5 A6 9 8 11 10 13 12 Inputs Outputs Y4 A Y Y5 L H H L Y6 Pinout: 14–Lead Packages (Top View) VCC A6 Y6 A5 Y5 A4 Y4 14 13 12 11 10 9 8 1 2 3 4 5 6 7 A1 Y1 A2 Y2 A3 Y3 GND 6/97 Motorola, Inc. 1997 1 SOIC TSSOP SOIC EIAJ REV 1 MC74VHC04 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS* Symbol Value Unit DC Supply Voltage –0.5 to + 7.0 V Vin DC Input Voltage –0.5 to + 7.0 V Vout DC Output Voltage –0.5 to VCC + 0.5 V IIK Input Diode Current –20 mA IOK Output Diode Current ± 20 mA Iout DC Output Current, per Pin ± 25 mA ICC DC Supply Current, VCC and GND Pins ± 50 mA PD Power Dissipation in Still Air, 500 450 mW Tstg Storage Temperature – 65 to + 150 _C VCC Parameter SOIC Packages† TSSOP Package† This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high–impedance circuit. For proper operation, Vin and Vout should be constrained to the range GND (Vin or Vout) VCC. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or V CC ). Unused outputs must be left open. v v * Absolute maximum continuous ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions beyond those indicated may adversely affect device reliability. Functional operation under absolute–maximum–rated conditions is not implied. †Derating — SOIC Packages: – 7 mW/_C from 65_ to 125_C TSSOP Package: – 6.1 mW/_C from 65_ to 125_C ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎ RECOMMENDED OPERATING CONDITIONS Symbol VCC Parameter DC Supply Voltage Vin DC Input Voltage Vout DC Output Voltage TA Operating Temperature tr, tf Input Rise and Fall Time VCC = 3.3V ±0.3V VCC = 5.0V ±0.5V Min Max Unit 2.0 5.5 V 0 5.5 V V 0 VCC –40 + 85 _C 0 0 100 20 ns/V DC ELECTRICAL CHARACTERISTICS S b l Symbol P Parameter T Test C Conditions di i VCC V VIH Minimum High–Level Input Voltage 2.0 3.0 to 5.5 VIL Maximum Low–Level Input Voltage 2.0 3.0 to 5.5 VOH Minimum High–Level Output Voltage VOL Maximum Low–Level Output Voltage MOTOROLA TA = 25°C Min Max 1.50 VCC x 0.7 Min 2.0 3.0 4.5 1.9 2.9 4.4 Vin = VIH or VIL IOH = –4mA IOH = –8mA 3.0 4.5 2.58 3.94 Vin = VIH or VIL IOL = 50µA 2.0 3.0 4.5 Vin = VIH or VIL IOL = 4mA IOL = 8mA 3.0 4.5 Max 1.50 VCC x 0.7 0.50 VCC x 0.3 Vin = VIH or VIL IOH = –50µA 2 Typ TA = –40 to 85°C 2.0 3.0 4.5 U i Unit V 0.50 VCC x 0.3 V V 1.9 2.9 4.4 2.48 3.80 0.0 0.0 0.0 0.1 0.1 0.1 0.1 0.1 0.1 0.36 0.36 0.44 0.44 V VHC Data – Advanced CMOS Logic DL203 — Rev 1 MC74VHC04 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ DC ELECTRICAL CHARACTERISTICS Symbol Iin ICC Parameter VCC V Test Conditions Maximum Input Leakage Current Vin = 5.5 or GND Maximum Quiescent Supply Current Vin = VCC or GND TA = 25°C Min TA = –40 to 85°C Typ Max Min Max Unit 0 to 5.5 ± 0.1 ± 0.1 µA 5.5 2.0 20.0 µA AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0ns) TA = 25°C S b l Symbol tPLH, tPHL Cin P Parameter T Test C Conditions di i Maximum Propagation Delay, A or B to Y Min TA = –40 to 85°C Typ Max Min Max U i Unit ns VCC = 3.3 ± 0.3V CL = 15pF CL = 50pF 5.0 7.5 7.1 10.6 1.0 1.0 8.5 12.0 VCC = 5.0 ± 0.5V CL = 15pF CL = 50pF 3.8 5.3 5.5 7.5 1.0 1.0 6.5 8.5 4 10 Maximum Input Capacitance 10 pF Typical @ 25°C, VCC = 5.0V CPD P Power Dissipation Di i i Capacitance C i (P (Per Inverter) I ) (Note (N 1.) 1) pF F 18 1. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC / 6 (per buffer). CPD is used to determine the no–load dynamic power consumption; PD = CPD VCC2 fin + ICC VCC. NOISE CHARACTERISTICS (Input tr = tf = 3.0ns, CL = 50pF, VCC = 5.0V) TA = 25°C S b l Symbol Ch Characteristic i i Typ Max U i Unit VOLP Quiet Output Maximum Dynamic VOL 0.4 0.8 V VOLV Quiet Output Minimum Dynamic VOL –0.4 –0.8 V VIHD Minimum High Level Dynamic Input Voltage 3.5 V VILD Maximum Low Level Dynamic Input Voltage 1.5 V TEST POINT VCC A OUTPUT 50% DEVICE UNDER TEST GND tPLH Y tPHL CL* 50% VCC * Includes all probe and jig capacitance Figure 1. Switching Waveforms Figure 2. Test Circuit INPUT Figure 3. Input Equivalent Circuit VHC Data – Advanced CMOS Logic DL203 — Rev 1 3 MOTOROLA MC74VHC04 OUTLINE DIMENSIONS D SUFFIX PLASTIC SOIC PACKAGE CASE 751A–03 ISSUE F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. –A– 14 8 P 7 PL –B– 1 0.25 (0.010) 7 G D 0.25 (0.010) T M F J M K 14 PL M R X 45° C SEATING PLANE B M B S A S DIM A B C D F G J K M P R MILLIMETERS MIN MAX 8.75 8.55 4.00 3.80 1.75 1.35 0.49 0.35 1.25 0.40 1.27 BSC 0.25 0.19 0.25 0.10 7° 0° 5.80 6.20 0.25 0.50 INCHES MIN MAX 0.337 0.344 0.150 0.157 0.054 0.068 0.014 0.019 0.016 0.049 0.050 BSC 0.008 0.009 0.004 0.009 7° 0° 0.228 0.244 0.010 0.019 DT SUFFIX PLASTIC TSSOP PACKAGE CASE 948G–01 ISSUE O 14X K REF 0.10 (0.004) 0.15 (0.006) T U M T U V S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE –W–. S S N 2X 14 L/2 0.25 (0.010) 8 M B –U– L PIN 1 IDENT. F 7 1 0.15 (0.006) T U N S DETAIL E K A –V– ÉÉÉ ÇÇÇ ÇÇÇ ÉÉÉ K1 J J1 SECTION N–N –W– C 0.10 (0.004) –T– SEATING PLANE MOTOROLA D G H DETAIL E 4 DIM A B C D F G H J J1 K K1 L M MILLIMETERS MIN MAX 4.90 5.10 4.30 4.50 ––– 1.20 0.05 0.15 0.50 0.75 0.65 BSC 0.50 0.60 0.09 0.20 0.09 0.16 0.19 0.30 0.19 0.25 6.40 BSC 0_ 8_ INCHES MIN MAX 0.193 0.200 0.169 0.177 ––– 0.047 0.002 0.006 0.020 0.030 0.026 BSC 0.020 0.024 0.004 0.008 0.004 0.006 0.007 0.012 0.007 0.010 0.252 BSC 0_ 8_ VHC Data – Advanced CMOS Logic DL203 — Rev 1 MC74VHC04 OUTLINE DIMENSIONS M SUFFIX PLASTIC SOIC EIAJ PACKAGE CASE 965–01 ISSUE O 14 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS AND ARE MEASURED AT THE PARTING LINE. MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 5. THE LEAD WIDTH DIMENSION (b) DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE LEAD WIDTH DIMENSION AT MAXIMUM MATERIAL CONDITION. DAMBAR CANNOT BE LOCATED ON THE LOWER RADIUS OR THE FOOT. MINIMUM SPACE BETWEEN PROTRUSIONS AND ADJACENT LEAD TO BE 0.46 ( 0.018). LE 8 Q1 E HE L 7 1 M_ DETAIL P Z D VIEW P A e c A1 b 0.13 (0.005) M 0.10 (0.004) DIM A A1 b c D E e HE 0.50 LE M Q1 Z MILLIMETERS MIN MAX ––– 2.05 0.05 0.20 0.35 0.50 0.18 0.27 9.90 10.50 5.10 5.45 1.27 BSC 7.40 8.20 0.50 0.85 1.10 1.50 10 _ 0_ 0.70 0.90 ––– 1.42 INCHES MIN MAX ––– 0.081 0.002 0.008 0.014 0.020 0.007 0.011 0.390 0.413 0.201 0.215 0.050 BSC 0.291 0.323 0.020 0.033 0.043 0.059 10 _ 0_ 0.028 0.035 ––– 0.056 Motorola reserves the right to make changes without further notice to any products herein. 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