Mitsubishi CM350DU-5F Igbt modules high power switching use insulated type Datasheet

MITSUBISHI IGBT MODULES
CM350DU-5F
HIGH POWER SWITCHING USE
INSULATED TYPE
CM350DU-5F
● IC ................................................................... 350A
● VCES .......................................................... 250V
● Insulated Type
● 2-elements in a pack
● UL Recognized
Yellow Card No. E80276
File No. E80271
APPLICATION
UPS, Forklift
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
TC measured point
E2 G2
C1
G1 E1
6
15
6
E2
C2E1
80
E2 G2
G1 E1
CM
(18.5)
(8.25)
C2E1
E2
18.25
CIRCUIT DIAGRAM
C1
4-φ6.5 MOUTING HOLES
25
3-M6 NUTS
25
21.5
2.5
93 ±0.25
7
18
14
0.5
0.5
4
2.8
29 +1.0
–0.5
L A B E L
0.5
0.5
4
18
14
7.5
7
8.5
18
14
21
62 ±0.25
110
Feb. 2009
MITSUBISHI IGBT MODULES
CM350DU-5F
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)
Symbol
VCES
VGES
IC
ICM
IE (Note 1)
IEM (Note 1)
PC (Note 3)
Tj
Tstg
Viso
Parameter
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
—
Torque strength
—
Weight
Conditions
G-E Short
C-E Short
TC = 25°C
Pulse
TC = 25°C
Pulse
TC = 25°C
(Note 2)
(Note 2)
—
—
Charged part to base plate, f = 60Hz, AC 1 minute
Main terminals M6 screw
Mounting M6 screw
Typical value
Ratings
Unit
250
±20
350
700
350
700
960
–40 ~ +150
–40 ~ +125
2500
1.96 ~ 2.94
1.96 ~ 2.94
520
V
V
A
A
A
A
W
°C
°C
Vrms
N•m
N•m
g
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol
Collector cutoff current
Gate-emitter
VGE(th)
threshold voltage
Gate-leakage current
IGES
Collector-emitter
VCE(sat)
saturation voltage
Input capacitance
Cies
Output capacitance
Coes
Reverse transfer capacitance
Cres
QG
Total gate charge
Turn-on delay time
td (on)
tr
Turn-on rise time
td (off)
Turn-off delay time
tf
Turn-off fall time
V EC(Note 1) Emitter-collector voltage
trr (Note 1) Reverse recovery time
Q rr (Note 1) Reverse recovery charge
Rth(j-c)Q
Thermal resistance (Note 5)
Rth(j-c)R
ICES
Rth(c-f)
VCE = VCES, VGE = 0V
Min
—
Limits
Typ
—
Max
1
IC = 35mA, VCE = 10V
3.0
4.0
5.0
V
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1.2
1.10
—
—
—
1320
—
—
—
—
—
—
5.7
—
—
0.5
1.7
—
99
4.5
3.4
—
1100
2400
900
500
2.0
300
—
0.13
0.19
µA
nF
nF
nF
nC
ns
ns
ns
ns
V
ns
µC
K/W
K/W
—
0.02
—
K/W
Test conditions
Parameter
Contact thermal resistance
±VGE = VGES, VCE = 0V
Tj = 25°C
(Note 4)
Tj = 125°C
IC = 350A, VGE = 10V
VCE = 10V
VGE = 0V
VCC = 100V, IC = 350A, VGE = 10V
VCC = 100V, IC = 350A
VGE = ±10V
RG = 7.1Ω
Resistive load
IE = 350A, VGE = 0V
IE = 350A,
die / dt = –700A / µs
Junction to case, IGBT part (Per 1/2 module)
Junction to case, FWDi part (Per 1/2 module)
Case to heat sink, conductive grease applied
(Per 1/2 module)
(Note 6)
Unit
mA
V
Note 1. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
5. Case temperature (Tc) measured point is indicated in OUTLINE DRAWING.
6. Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)].
Feb. 2009
2
MITSUBISHI IGBT MODULES
CM350DU-5F
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
TRANSFER CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT IC (A)
500
5.5
400
5.25
300
200
5
100
4.75
4.5
0
1
2
3
4
600
500
400
300
200
100
0
5
Tj = 25°C
Tj = 125°C
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE VCE (V)
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
2.0
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE(sat) (V)
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE(sat) (V)
VCE = 10V
10
8
6
600 VGE=15
(V)
0
VGE = 10V
Tj = 25°C
Tj = 125°C
1.5
1.0
0.5
0
7
5
EMITTER CURRENT IE (A)
700
5.75
Tj = 25°C
0
5
Tj = 25°C
4
3
IC = 700A
IC = 350A
IC = 140A
2
1
0
100 200 300 400 500 600 700
0
5
10
15
20
COLLECTOR CURRENT IC (A)
GATE-EMITTER VOLTAGE VGE (V)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE CHARACTERISTICS
(TYPICAL)
102
Tj = 25°C
CAPACITANCE Cies, Coes, Cres (nF)
COLLECTOR CURRENT IC (A)
700
3
2
102
7
5
3
2
101
7
5
Cies
3
2
101
7
5
3
2
100
7
5
Coes
Cres
3
2
1.8
VGE = 0V
10–1 –1
10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
EMITTER-COLLECTOR VOLTAGE VEC (V)
COLLECTOR-EMITTER VOLTAGE VCE (V)
7
0.6
0.8
1.0
1.2
1.4
1.6
Feb. 2009
3
MITSUBISHI IGBT MODULES
CM350DU-5F
HIGH POWER SWITCHING USE
INSULATED TYPE
103
3
2
102
tr
7
5
3 Tj = 125°C
VCC = 100V
VGE = ±10V
RG = 7.1Ω
101 1
10
2
3
5 7 102
2
2
3
3
trr
2
2
102
102
7
5
7
5
Irr
3
3
2
2
2
3
5 7 102
101
2
3
5 7 103
COLLECTOR CURRENT IC (A)
EMITTER CURRENT IE (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi part)
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101
101
7 Single Pulse
5
3 TC = 25°C
Per unit base = Rth(j – c) = 0.13K/ W
100
5
5
101 1
10
5 7 103
3
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Zth(j – c)
SWITCHING TIME (ns)
tf
2
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Zth(j – c)
REVERSE RECOVERY TIME trr (ns)
td(off)
td(on)
7
5
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
103
103
– di /dt = 700A /µs
7
7
Tj = 25°C
7
5
3
2
3
2
10–1
10–1
10–2
10–2
10–3
10–3
10–5 2 3 5 710–4 2 3 5 7 10–3
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
TIME (s)
REVERSE RECOVERY CURRENT Irr (A)
HALF-BRIDGE
SWITCHING TIME CHARACTERISTICS
(TYPICAL)
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101
101
7 Single Pulse
5
3 TC = 25°C
2
100
Per unit base = Rth(j – c) = 0.19K/ W
7
5
3
2
3
2
10–1
10–1
10–2
10–2
10–3
10–3
10–5 2 3 5 710–4 2 3 5 7 10–3
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
TIME (s)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
GATE-EMITTER VOLTAGE VGE (V)
20
IC = 350A
15
VCC = 50V
VCC = 100V
10
5
0
0
0.5
1.0
1.5
2.0
2.5
GATE CHARGE QG (nC)
Feb. 2009
4
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