Preliminary Data Sheet Specifications in this document are tentative and subject to change. NV4V31MF Blue-Violet Laser Diode 405 nm Blue-Violet Laser Light Source R08DS0045EJ0001 Rev.0.01 Sep 08, 2011 DESCRIPTION The NV4V31MF is a blue-violet laser diode with a wavelength of 405 nm. A newly developed LD chip structure achieves a high optical power output of 175 mW (CW) at up to 85°C. The NV4V31MF can provide excellent linearity from low to high output at high temperatures, and reduces the unevenness of beam divergence. FEATURES • • • • High optical output power Peak emission wavelength Wide operating temperature range φ 3.8 mm small CAN package Po = 175 mW @CW λp = 405 nm TYP. TC = −5 to +85°C APPLICATIONS • Blue-violet laser light source R08DS0045EJ0001 Rev.0.01 Sep 08, 2011 Page 1 of 6 Preliminary document Specifications in this document are tentative and subject to change. NV4V31MF Chapter Title X WITH GLASS φ 1.2 0.8±0.05 90°±2° 0.25±0.07 PACKAGE DIMENSIONS (UNIT: mm) Y EFFECTIVE DIAMETER φ 0.65 MIN. 0.25±0.07 φ 3.8+0.0 –0.025 0.1±0.05 *1 1.3±0.08 φ 2.42±0.1 LD CHIP Z 0.2 MIN. STEM REFERENCE PLAIN 0.3 MAX. 6.5±0.5 1.0±0.1 2.02±0.08 φ 3.1 MAX. 3– φ 0.3±0.05 P.C.D. φ 1.43±0.15 1 1 3 LD 3 (Stem GND) 2 0.2±0.1 BOTTOM VIEW 2 PIN CONNECTIONS Remarks 1. Cap glass thickness: 0.25±0.03 mm Cap glass refractive index:1.53 (λ = 405 nm) 2. Position accuracy of the LD chip based on the center of stem ∆ x = ±80 µm ∆ y = ±80 µm ∆ z = ±80 µm (*1) R08DS0045EJ0001 Rev.0.01 Sep 08, 2011 Page 2 of 6 Preliminary document Specifications in this document are tentative and subject to change. NV4V31MF Chapter Title ORDERING INFORMATION Part Number NV4V31MF Package φ 3.8 mm CAN package ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) Parameter Optical Output Power (CW) Optical Output Power (pulse) *1 Reverse Voltage of LD Operating Case Temperature Storage Temperature Symbol Po Pp VR TC Tstg Ratings 180 360 2 㧙5 to 㧗85 㧙40 to 㧗85 Unit mW mW V °C °C Note: *1. Pulse condition: PW ≤ 50 ns, Duty ≤ 50% RECOMMENDED OPERATING CONDITIONS (TC = 25°C, unless otherwise specified) Parameter Optical Output Power (CW) Symbol Po MAX. 175 Unit mW ELECTRO-OPTICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified) Parameter Threshold Current Operating Current Optical Voltage Slope Efficiency Peak Wavelength Beam Divergence (lateral) Beam Divergence (vertical) Position Accuracy Angle (lateral) Position Accuracy Angle (vertical) R08DS0045EJ0001 Rev.0.01 Sep 08, 2011 Symbol Ith Iop Vop ηd λp θ// θ⊥ ∆θ// ∆θ⊥ Conditions CW CW, Po = 175 mW CW, Po = 175 mW CW, Po = 20 mW, 175 mW CW, Po = 175 mW CW, Po = 175 mW CW, Po = 175 mW MIN. MAX. 55 200 6.5 1.1 400 6 15 㧙3 TYP 35 150 5.0 1.55 405 9 20 0 㧙3 0 3 415 12 25 3 Unit mA mA V W/A nm deg. deg. Page 3 of 6 Preliminary document Specifications in this document are tentative and subject to change. NV4V31MF Chapter Title NOTES ON HANDLING (UNIT: mm) 1. Recommended soldering conditions • Peak Temperature 350°C or below • Time 3 seconds or less • Soldering of leads should be made at the point 2.0 mm from the root of the lead • This device cannot be mounted using reflow soldering. 2. Usage cautions (1) Take the following steps to ensure that the device is not damaged by static electricity. • Wear an antistatic wrist strap when soldering the device. We recommend a strap with a 1 MΩ resistor. • Make sure that the work table and soldering iron are grounded. • Make sure that the soldering iron does not leak. (2) Do not subject the package to undue stress. The package has a tensile strength of 1N. Do not exceed this rating. Also, avoid bending the leads as much as possible. If the leads must be bent, bend them only once, making sure to anchor the base of the lead. (3) Do not allow the glass window of the package to become scratched or dirty. Also, do not subject the glass window to external force. (4) Be sure to attach a heat sink to sufficiently dissipate heat. (5) Use the device as soon as possible after opening the aluminum moisture barrier bag. R08DS0045EJ0001 Rev.0.01 Sep 08, 2011 Page 4 of 6 Preliminary document Specifications in this document are tentative and subject to change. NV4V31MF Chapter Title REFERENCE Document Name Opto-Electronics Devices Pamphlet*1 Document No. PX10160E Note: *1. Published by the former NEC Electronics Corporation. R08DS0045EJ0001 Rev.0.01 Sep 08, 2011 Page 5 of 6 Preliminary document Specifications in this document are tentative and subject to change. NV4V31MF Chapter Title SAFETY INFORMATION ON THIS PRODUCT DANGER SEMICONDUCTOR LASER INVISIBLE LASER RADIATION AVOID DIRECT EXPOSURE TO BEAM OUTPUT POWER mW MAX WAVELENGTH nm CLASS lllb LASER PRODUCT Warning Laser Beam AVOID EXPOSURE-Invisible Laser Radiation is emitted from this aperture A laser beam is emitted from this diode during operation. The laser beam, visible or invisible, directly or indirectly, may cause injury to the eye or loss of eyesight. • Do not look directly into the laser beam. • Avoid exposure to the laser beam, any reflected or collimated beam. R08DS0045EJ0001 Rev.0.01 Sep 08, 2011 Page 6 of 6 Revision History NV4V31MF Preliminary Data Sheet Rev. Date Page 0.01 Sep 08, 2011 − Description Summary First edition issued All trademarks and registered trademarks are the property of their respective owners. C-1 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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