Renesas NV4V31MF Blue-violet laser diode 405 nm blue-violet laser light source Datasheet

Preliminary Data Sheet
Specifications in this document are tentative and subject to change.
NV4V31MF
Blue-Violet Laser Diode
405 nm Blue-Violet Laser Light Source
R08DS0045EJ0001
Rev.0.01
Sep 08, 2011
DESCRIPTION
The NV4V31MF is a blue-violet laser diode with a wavelength of 405 nm. A newly developed LD chip structure
achieves a high optical power output of 175 mW (CW) at up to 85°C. The NV4V31MF can provide excellent linearity
from low to high output at high temperatures, and reduces the unevenness of beam divergence.
FEATURES
•
•
•
•
High optical output power
Peak emission wavelength
Wide operating temperature range
φ 3.8 mm small CAN package
Po = 175 mW @CW
λp = 405 nm TYP.
TC = −5 to +85°C
APPLICATIONS
• Blue-violet laser light source
R08DS0045EJ0001 Rev.0.01
Sep 08, 2011
Page 1 of 6
Preliminary document
Specifications in this document are tentative and subject to change.
NV4V31MF
Chapter Title
X
WITH GLASS
φ 1.2
0.8±0.05
90°±2°
0.25±0.07
PACKAGE DIMENSIONS (UNIT: mm)
Y
EFFECTIVE
DIAMETER
φ 0.65 MIN.
0.25±0.07
φ 3.8+0.0
–0.025
0.1±0.05
*1
1.3±0.08
φ 2.42±0.1
LD CHIP
Z
0.2 MIN.
STEM
REFERENCE
PLAIN
0.3 MAX.
6.5±0.5 1.0±0.1
2.02±0.08
φ 3.1 MAX.
3– φ 0.3±0.05
P.C.D.
φ 1.43±0.15
1
1
3
LD
3 (Stem GND)
2
0.2±0.1
BOTTOM VIEW
2
PIN CONNECTIONS
Remarks 1. Cap glass thickness: 0.25±0.03 mm
Cap glass refractive index:1.53 (λ = 405 nm)
2. Position accuracy of the LD chip based on the center of stem
∆ x = ±80 µm
∆ y = ±80 µm
∆ z = ±80 µm (*1)
R08DS0045EJ0001 Rev.0.01
Sep 08, 2011
Page 2 of 6
Preliminary document
Specifications in this document are tentative and subject to change.
NV4V31MF
Chapter Title
ORDERING INFORMATION
Part Number
NV4V31MF
Package
φ 3.8 mm CAN package
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
Parameter
Optical Output Power (CW)
Optical Output Power (pulse) *1
Reverse Voltage of LD
Operating Case Temperature
Storage Temperature
Symbol
Po
Pp
VR
TC
Tstg
Ratings
180
360
2
㧙5 to 㧗85
㧙40 to 㧗85
Unit
mW
mW
V
°C
°C
Note: *1. Pulse condition: PW ≤ 50 ns, Duty ≤ 50%
RECOMMENDED OPERATING CONDITIONS
(TC = 25°C, unless otherwise specified)
Parameter
Optical Output Power (CW)
Symbol
Po
MAX.
175
Unit
mW
ELECTRO-OPTICAL CHARACTERISTICS
(TC = 25°C, unless otherwise specified)
Parameter
Threshold Current
Operating Current
Optical Voltage
Slope Efficiency
Peak Wavelength
Beam Divergence (lateral)
Beam Divergence (vertical)
Position Accuracy Angle
(lateral)
Position Accuracy Angle
(vertical)
R08DS0045EJ0001 Rev.0.01
Sep 08, 2011
Symbol
Ith
Iop
Vop
ηd
λp
θ//
θ⊥
∆θ//
∆θ⊥
Conditions
CW
CW, Po = 175 mW
CW, Po = 175 mW
CW, Po = 20 mW, 175 mW
CW, Po = 175 mW
CW, Po = 175 mW
CW, Po = 175 mW
MIN.
MAX.
55
200
6.5
1.1
400
6
15
㧙3
TYP
35
150
5.0
1.55
405
9
20
0
㧙3
0
3
415
12
25
3
Unit
mA
mA
V
W/A
nm
deg.
deg.
Page 3 of 6
Preliminary document
Specifications in this document are tentative and subject to change.
NV4V31MF
Chapter Title
NOTES ON HANDLING (UNIT: mm)
1. Recommended soldering conditions
•• Peak Temperature
350°C or below
•• Time
3 seconds or less
•• Soldering of leads should be made at the point 2.0 mm from the root of the lead
•• This device cannot be mounted using reflow soldering.
2. Usage cautions
(1) Take the following steps to ensure that the device is not damaged by static electricity.
•• Wear an antistatic wrist strap when soldering the device.
We recommend a strap with a 1 MΩ resistor.
•• Make sure that the work table and soldering iron are grounded.
•• Make sure that the soldering iron does not leak.
(2) Do not subject the package to undue stress.
The package has a tensile strength of 1N.
Do not exceed this rating. Also, avoid bending the leads as much as possible.
If the leads must be bent, bend them only once, making sure to anchor the base of the lead.
(3) Do not allow the glass window of the package to become scratched or dirty.
Also, do not subject the glass window to external force.
(4) Be sure to attach a heat sink to sufficiently dissipate heat.
(5) Use the device as soon as possible after opening the aluminum moisture barrier bag.
R08DS0045EJ0001 Rev.0.01
Sep 08, 2011
Page 4 of 6
Preliminary document
Specifications in this document are tentative and subject to change.
NV4V31MF
Chapter Title
REFERENCE
Document Name
Opto-Electronics Devices Pamphlet*1
Document No.
PX10160E
Note: *1. Published by the former NEC Electronics Corporation.
R08DS0045EJ0001 Rev.0.01
Sep 08, 2011
Page 5 of 6
Preliminary document
Specifications in this document are tentative and subject to change.
NV4V31MF
Chapter Title
SAFETY INFORMATION ON THIS PRODUCT
DANGER
SEMICONDUCTOR LASER
INVISIBLE LASER RADIATION
AVOID DIRECT EXPOSURE TO BEAM
OUTPUT POWER
mW MAX
WAVELENGTH
nm
CLASS lllb LASER PRODUCT
Warning
Laser Beam
AVOID EXPOSURE-Invisible
Laser Radiation is emitted from
this aperture
A laser beam is emitted from this diode during operation.
The laser beam, visible or invisible, directly or indirectly, may cause injury to the eye or loss of
eyesight.
• Do not look directly into the laser beam.
• Avoid exposure to the laser beam, any reflected or collimated beam.
R08DS0045EJ0001 Rev.0.01
Sep 08, 2011
Page 6 of 6
Revision History
NV4V31MF Preliminary Data Sheet
Rev.
Date
Page
0.01
Sep 08, 2011
−
Description
Summary
First edition issued
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