TSC BC847CRFG 250mw, npn small signal transistor Datasheet

BC846A/B, BC847A/B/C, BC848A/B/C
250mW, NPN Small Signal Transistor
Small Signal Transistor
SOT-23
3 Collector
A
1 Base
F
2 Emitter
B
Features
E
—Epitaxial planar die construction
—Surface device type mounting
C
—Moisture sensitivity level 1
D
—Matte Tin(Sn) lead finish with Nickel(Ni) underplate
—Pb free version and RoHS compliant
—Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
Unit (mm)
Dimensions
Mechanical Data
Unit (inch)
Min
Max
Min
Max
—Case : SOT- 23 small outline plastic package
A
2.80
3.00
0.110
0.118
—Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
B
1.20
1.40
0.047
0.055
C
0.30
0.50
0.012
0.020
—High temperature soldering guaranteed: 260°C/10s
D
1.80
2.00
0.071
0.079
—Weight : 0.008gram (approximately)
E
2.25
2.55
0.089
0.100
F
0.90
1.20
0.035
0.043
Ordering Information
Package
Part No.
Suggested PAD Layout
Packing
Marking
SOT-23 BC846A RF
3K / 7" Reel
1A
SOT-23 BC846B RF
3K / 7" Reel
1B
SOT-23 BC847A RF
3K / 7" Reel
1E
SOT-23 BC847B RF
3K / 7" Reel
1F
2.0
SOT-23 BC847C RF
3K / 7" Reel
1G
0.079
SOT-23 BC848A RF
3K / 7" Reel
1J
SOT-23 BC848B RF
3K / 7" Reel
1K
SOT-23 BC848C RF
3K / 7" Reel
1L
SOT-23 BC846A RFG
3K / 7" Reel
1A
SOT-23 BC846B RFG
3K / 7" Reel
1B
SOT-23 BC847A RFG
3K / 7" Reel
1E
SOT-23 BC847B RFG
3K / 7" Reel
1F
SOT-23 BC847C RFG
3K / 7" Reel
1G
SOT-23 BC848A RFG
3K / 7" Reel
1J
SOT-23 BC848B RFG
3K / 7" Reel
1K
SOT-23 BC848C RFG
3K / 7" Reel
1L
0.95
0.037
0.9
0.035
0.8
0.031
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Power Dissipation
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Junction and Storage Temperature Range
BC846
BC847
BC848
BC846
BC847
BC848
BC846
BC847
BC848
Symbol
Value
Units
PD
mW
IC
250
80
50
30
65
45
30
6
6
5
0.1
TJ, TSTG
-55 to + 150
°C
VCBO
VCEO
VEBO
V
V
V
A
Notes:1. Valid provided that electrodes are kept at ambient temperature
Version : E11
BC846A/B, BC847A/B/C, BC848A/B/C
250mW, NPN Small Signal Transistor
Small Signal Transistor
Electrical Characteristics
Collector Cut-off Current
VCB= 30V
IE= 0
ICBO
Min
80
50
30
65
45
30
6
6
5
-
15
nA
Emitter Cut-off Current
VEB= 5V
IC=0
IEBO
-
0.1
μA
VCE= 5V
IC= 2mA
hFE
110
200
420
220
450
800
IC= 100mA IB= 5mA
VCE(sat)
-
0.5
IC= 100mA IB= 5mA
VBE(sat)
-
1.1
V
fT
100
-
MHz
Type Number
Symbol
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
BC846
BC847
BC848
BC846
BC847
BC848
BC846
BC847
BC848
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B
BC847C, BC848C
DC current gain
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
VCE= 5V
Transition frequency
IC= 10μA
IE= 0
V(BR)CBO
IC= 10mA
IB= 0
V(BR)CEO
IE= 1μA
IC= 0
V(BR)EBO
IC= 10mA
f= 100MHz
Max
Units
-
V
-
V
-
V
V
Tape & Reel specification
Item
Carrier width
Carrier length
Carrier depth
Sprocket hole
Reel outside diameter
Reel inner diameter
Feed hole width
Sprocke hole position
Punch hole position
Sprocke hole pitch
Embossment center
Overall tape thickness
Tape width
Reel width
TSC label
Top Cover Tape
Carieer Tape
Any Additional Label (If Required)
P0
d
P1
T
Dimension(mm)
3.15 ±0.10
2.77 ±0.10
1.22 ±0.10
1.50 ± 0.10
178 ± 1
55 Min
13.0 ± 0.20
1.75 ±0.10
3.50 ±0.05
4.00 ±0.10
2.00 ±0.05
0.229 ±0.013
8.10 ±0.20
12.30 ±0.20
E
A
C
Symbol
A
B
C
d
D
D1
D2
E
F
P0
P1
T
W
W1
F
W
B
W1
D
D2
D1
Direction of Feed
Version : E11
BC846A/B, BC847A/B/C, BC848A/B/C
250mW, NPN Small Signal Transistor
Small Signal Transistor
Rating and Characteristic Curves
Figure 2. DC Current Gain
Figure1. Static Characteristic
IC[mA], COLLECTOR CURRENT
100
MGT723
400
handbook, halfpage
IB = 400µA
IB = 350µA
80
hFE
IB = 300µA
(1)
300
IB = 250µA
60
IB = 200µA
(2)
200
IB = 150µA
40
IB = 100µA
(3)
20
100
IB = 50µA
0
0
4
8
12
16
20
0
10−1
VCE[V], COLLECTOR-EMITTER VOLTAGE
1
10
102
VCE = 5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
100
MGT724
1200
BE
(mV)
1000
103
I C (mA)
IC[mA], COLLECTOR CURRENT
handbook,
halfpage
V
(1)
800
(2)
600
(3)
400
VCE = 2V
10
1
200
0.1
0.0
0
10−1
1
102
10
103
0.2
0.4
0.6
0.8
1.0
1.2
VBE[V], BASE-EMITTER VOLTAGE
I C (mA)
Figure 5. Collector Output Capacitance
100
Cob[pF], CAPACITANCE
f=1MHz
10
1
0.1
1
10
100
VCB[V], COLLECTOR-BASE VOLTAGE
1000
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
VCE = 5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Figure 6. Current Gain Bandwidth Product
1000
VCE =5V
100
10
1
0.1
1
10
100
IC[mA], COLLECTOR CURRENT
Version : E11
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