ON NTHS5404T1G Power mosfet Datasheet

NTHS5404
Power MOSFET
20 V, 7.2 A, N−Channel ChipFET
Features
•
•
•
•
Low RDS(on) for Higher Efficiency
Logic Level Gate Drive
Miniature ChipFET Surface Mount Package Saves Board Space
Pb−Free Package is Available
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V(BR)DSS
RDS(on) TYP
ID MAX
20 V
25 m @ 4.5 V
7.2 A
Applications
• Power Management in Portable and Battery−Powered Products; i.e.,
Cellular and Cordless Telephones and PCMCIA Cards
D
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Steady
State
5 Secs
Drain−Source Voltage
VDS
20
V
Gate−Source Voltage
VGS
12
V
Continuous Drain Current
(TJ = 150°C) (Note 1)
TA = 25°C
TA = 85°C
ID
IS
Maximum Power Dissipation
(Note 1)
TA = 25°C
TA = 85°C
PD
7.2
TJ, Tstg
A
5.2
A
W
2.5
1.3
ChipFET
CASE 1206A
STYLE 1
1.3
0.7
°C
−55 to +150
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface Mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
PIN
CONNECTIONS
MARKING
DIAGRAM
D
8
1
D
1
8
D
7
2
D
2
7
D
6
3
D
3
S
5
4
G
4
A2 M
Operating Junction and Storage
Temperature Range
5.2
3.8
20
IDM
Continuous Source Current
(Diode Conduction) (Note 1)
S
N−Channel MOSFET
A
7.2
5.2
Pulsed Drain Current
G
Unit
6
5
A2 = Specific Device Code
M = Month Code
ORDERING INFORMATION
Device
Package
Shipping†
NTHS5404T1
ChipFET
3000/Tape & Reel
NTHS5404T1G
ChipFET
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
 Semiconductor Components Industries, LLC, 2004
October, 2004 − Rev. 3
1
Publication Order Number:
NTHS5404T1/D
NTHS5404
THERMAL CHARACTERISTICS
Characteristic
Symbol
Maximum Junction−to−Ambient (Note 2)
t 5 sec
Steady State
RJA
Maximum Junction−to−Foot (Drain)
Steady State
RJF
Typ
Max
40
80
50
95
15
20
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Test Condition
Min
Typ
Max
Unit
VGS(th)
VDS = VGS, ID = 250 A
0.6
−
−
V
Gate−Body Leakage
IGSS
VDS = 0 V, VGS = 12 V
−
−
100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 16 V, VGS = 0 V
−
−
1.0
A
VDS = 16 V, VGS = 0 V,
TJ = 85°C
−
−
5.0
ID(on)
VDS 5.0 V, VGS = 4.5 V
20
−
−
A
rDS(on)
( )
VGS = 4.5 V, ID = 5.2 A
−
0.025
0.030
VGS = 2.5 V, ID = 4.3 A
−
0.038
0.045
gfs
VDS = 10 V, ID = 5.2 A
−
20
−
S
VSD
IS = 5.2 A, VGS = 0 V
−
0.8
1.2
V
−
12
18
nC
−
2.4
−
Characteristic
Static
Gate Threshold Voltage
On−State Drain Current (Note 3)
Drain−Source On−State Resistance (Note 3)
Forward Transconductance (Note 3)
Diode Forward Voltage (Note 3)
Dynamic (Note 4)
Total Gate Charge
Gate−Source Charge
QG
QGS
VDS = 10 V, VGS = 4.5 V,
ID = 5.2 A
Gate−Drain Charge
QGD
−
3.2
−
Turn−On Delay Time
td(on)
−
20
30
−
40
60
−
40
60
−
15
23
−
30
60
Rise Time
Turn−Off Delay Time
tr
td(off)
Fall Time
tf
Source−Drain Reverse Recovery Time
trr
VDD = 10 V, RL = 10 ID 1.0
1 0 A,
A VGEN = 4
4.5
5V
V,
RG = 6 IF = 1.1 A, di/dt = 100 A/s
2. Surface Mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.
4. Guaranteed by design, not subject to production testing.
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2
ns
NTHS5404
TYPICAL ELECTRICAL CHARACTERISTICS
5V
12
1.8 V
2V
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
12
10
TJ = 25°C
VGS = 2 V − 5 V
8
1.6 V
6
4
1.4 V
2
10
8
6
4
125°C
25°C
2
VGS = 1.2 V
TC = −55°C
0
0
0.5
1
2
1.5
2.5
3
1
1.5
2.5
2
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.06
ID = 5.2 A
TJ = 25°C
0.05
0.04
0.03
0.02
0.01
0
0
2
1
4
3
5
0.040
TJ = 25°C
0.038
0.036
VGS = 2.5 V
0.034
0.032
0.030
VGS = 4.5 V
0.028
VGS = 6 V
0.026
0.024
2
3
4
5
7
6
8
9
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
1.6
10
1E−05
ID = 5.2 A
VGS = 4.5 V
VGS = 0 V
1.4
IDSS, LEAKAGE (AMPS)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
0.5
0
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
0
1E−06
1.2
1
TJ = 150°C
1E−07
0.8
0.6
−50
TJ = 100°C
1E−08
−25
0
25
50
75
100
125
150
0
4
8
12
16
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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3
20
NTHS5404
5
VGS = 0 V
TJ = 25°C
1500
900
9
4
8
7
6
5
2
600
4
ID = 5.2 A
TJ = 25°C
QGD/QGS = 1.33
0
0
8
12
4
VGS
0
VDS
4
8
12
16
3
2
1
0
0
20
1
2
3
4
5
6
7
8
9
10 11
12
QG, TOTAL GATE CHARGE (nC)
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
Figure 7. Capacitance Variation
100
IS, SOURCE CURRENT (AMPS)
5
td(off)
tf
t, TIME (ns)
QGS
QGD
1
Coss
300
td(on)
10
tr
VDD = 10 V
ID = +1.0 A
VGS = 4.5 V
1
4
VGS = 0 V
TJ = 25°C
3
2
1
0
1
10
0
100
0.2
0.4
0.6
0.8
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
NORMALIZED EFFECTIVE TRANSIENT
THERMAL IMPEDANCE
10
3
Crss
1200
11
QG
VGS, GATE−TO−SOURCE VOLTAGE
(V)
Ciss
1800
C, CAPACITANCE (pF)
VDS = 0 V
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 10. Diode Forward Voltage versus
Current
1
Duty Cycle = 0.5
0.2
0.1
0.1
PDM
PER UNIT BASE = RJA = 80°C/W
TJM − TA = PDMZJA(t)
SURFACE MOUNTED
0.05
t1
0.02
t2
DUTY CYCLE, D = t1/t2
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
10
100
SQUARE WAVE PULSE DURATION (sec)
Figure 11. Normalized Thermal Transient Impedance, Junction−to−Ambient
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4
1000
NTHS5404
SOLDERING FOOTPRINT*
2.032
0.08
2.032
0.08
0.457
0.018
0.635
0.025
1.727
0.068
0.457
0.018
0.178
0.007
0.711
0.028
0.711
0.028
0.66
0.026
0.66
0.026
Figure 12. Basic
Figure 13. Style 1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
BASIC PAD PATTERNS
confines of the basic footprint. The drain copper area is
0.0054 sq. in. (or 3.51 sq. mm). This will assist the power
dissipation path away from the device (through the copper
lead−frame) and into the board and exterior chassis (if
applicable) for the single device. The addition of a further
copper area and/or the addition of vias to other board layers
will enhance the performance still further.
The basic pad layout with dimensions is shown in
Figure 12. This is sufficient for low power dissipation
MOSFET applications, but power semiconductor
performance requires a greater copper pad area,
particularly for the drain leads.
The minimum recommended pad pattern shown in
Figure 13 improves the thermal area of the drain
connections (pins 1, 2, 3, 6, 7, 8) while remaining within the
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5
NTHS5404
PACKAGE DIMENSIONS
ChipFET
CASE 1206A−03
ISSUE E
A
8
7
M
6
K
5
S
5
6
7
8
4
3
2
1
B
1
2
3
L
4
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM
PER SIDE.
4. LEADFRAME TO MOLDED BODY OFFSET IN
HORIZONTAL AND VERTICAL SHALL NOT EXCEED
0.08 MM.
5. DIMENSIONS A AND B EXCLUSIVE OF MOLD GATE
BURRS.
6. NO MOLD FLASH ALLOWED ON THE TOP AND
BOTTOM LEAD SURFACE.
7. 1206A−01 AND 1206A−02 OBSOLETE. NEW
STANDARD IS 1206A−03.
J
G
DIM
A
B
C
D
G
J
K
L
M
S
C
0.05 (0.002)
MILLIMETERS
MIN
MAX
2.95
3.10
1.55
1.70
1.00
1.10
0.25
0.35
0.65 BSC
0.10
0.20
0.28
0.42
0.55 BSC
5 ° NOM
1.80
2.00
STYLE 1:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
INCHES
MIN
MAX
0.116
0.122
0.061
0.067
0.039
0.043
0.010
0.014
0.025 BSC
0.004
0.008
0.011
0.017
0.022 BSC
5 ° NOM
0.072
0.080
DRAIN
DRAIN
DRAIN
GATE
SOURCE
DRAIN
DRAIN
DRAIN
ChipFET is a trademark of Vishay Siliconix.
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NTHS5404T1/D
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