GA05JT12-263 Normally – OFF Silicon Carbide Junction Transistor VDS RDS(ON) ID Features Package RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch Suitable for connecting an anti-parallel diode Positive temperature coefficient for easy paralleling Low gate charge Low intrinsic output capacitance = = = D 1200 V 260 mΩ 5A D G D G S S TO-263 Advantages Applications SiC transistor most compatible with existing Si gate-drivers Low switching losses Higher efficiency High temperature operation High short circuit withstand capability Down Hole Oil Drilling, Geothermal Instrumentation Hybrid Electric Vehicles (HEV) Solar Inverters Switched-Mode Power Supply (SMPS) Power Factor Correction (PFC) Induction Heating Uninterruptible Power Supply (UPS) Motor Drives Absolute Maximum Ratings Parameter Drain – Source Voltage Continuous Drain Current Gate Peak Current Symbol VDS ID IGM Turn-Off Safe Operating Area RBSOA Short Circuit Safe Operating Area SCSOA Reverse Gate – Source Voltage Reverse Drain – Source Voltage Power Dissipation Storage Temperature VSG VSD Ptot Tstg Conditions VGS = 0 V TC = 150°C TVJ = 175 oC, IG = 0.25 A, Clamped Inductive Load TVJ = 175 oC, IG = 1.5 A, VDS = 70 V, Non Repetitive TC = 150 °C Value 1200 5 5 ID,max = 5 @ VDS ≤ VDSmax Unit V A A 20 µs 30 25 17.7 -55 to 175 V V W °C A Notes Fig. 19 Fig. 16 Fig. 14 Electrical Characteristics Parameter Symbol Conditions Drain – Source On Resistance RDS(ON) ID = 5 A, Tj = 25 °C ID = 5 A, Tj = 125 °C ID = 5 A, Tj = 175 °C Gate Forward Voltage VGS(FWD) IG = 500 mA, Tj = 25 °C IG = 500 mA, Tj = 175 °C β VDS = 5 V, ID = 5 A, Tj = 25 °C VDS = 5 V, ID = 5 A, Tj = 125 °C VDS = 5 V, ID = 5 A, Tj = 175 °C Drain Leakage Current IDSS VR = 1200 V, VGS = 0 V, Tj = 25 °C VR = 1200 V, VGS = 0 V, Tj = 125 °C VR = 1200 V, VGS = 0 V, Tj = 175 °C Gate Leakage Current ISG VSG = 20 V, Tj = 25 °C Min. Value Typical Max. Unit Notes mΩ Fig. 5 V Fig. 4 – Fig. 5 μA Fig. 6 On State Characteristics DC Current Gain 260 368 455 3.06 2.79 80 60 55 Off State Characteristics Jun 2014 http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/ <1 1 2 20 nA Pg1 of 8 GA05JT12-263 Electrical Characteristics Parameter Symbol Conditions Ciss Crss/Coss EOSS VGS = 0 V, VD = 300 V, f = 1 MHz VD = 300 V, f = 1 MHz VGS = 0 V, VD = 300 V, f = 1 MHz RG(INT) td(on) tf td(off) tr td(on) tf td(off) tr Eon Eoff Etot Eon Eoff Etot f = 1 MHz, VAC = 25 mV, Tj = 175 ºC Min. Value Typical Unit Notes 527 24 1.1 pF pF µJ Fig. 7 Fig. 7 Fig. 8 14.5 13.0 12.4 12.0 6.6 7.0 12.2 30.0 6.9 20.6 1.0 21.6 18.4 0.6 19.0 Ω ns ns ns ns ns ns ns ns µJ µJ µJ µJ µJ µJ 1.41 °C/W Max. Capacitance Characteristics Input Capacitance Reverse Transfer/Output Capacitance Output Capacitance Stored Energy Switching Characteristics1 Gate Resistance, Internal Turn On Delay Time Fall Time, VDS Turn Off Delay Time Rise Time, VDS Turn On Delay Time Fall Time, VDS Turn Off Delay Time Rise Time, VDS Turn-On Energy Per Pulse Turn-Off Energy Per Pulse Total Switching Energy Turn-On Energy Per Pulse Turn-Off Energy Per Pulse Total Switching Energy 1 Tj = 25 ºC, VDS = 200 V, ID = 5 A, RG(EXT) = 100 Ω, CG = 10 nF, VG = 20/-5 V, Load = 40 Ω Refer to Fig. 16 for IG Waveform Tj = 175 ºC, VDS = 200 V, ID = 5 A, RG(EXT) = 100 Ω, CG = 10 nF, VG = 20/-5 V, Load = 40 Ω Refer to Fig. 16 for IG Waveform Tj = 25 ºC, VDS = 200 V, ID = 5 A, RG(EXT) = 100 Ω, CG = 10 nF, VG = 20/-5 V, Load = 287 µH Tj = 175 ºC, VDS = 200 V, ID = 5 A, RG(EXT) = 100 Ω, CG = 10 nF, VG = 20/-5 V, Load = 287 µH Fig. 9, 11 Fig. 10, 12 Fig. 9 Fig. 10 Fig. 9, 11 Fig. 10, 12 Fig. 9 Fig. 10 – All times are relative to the Drain-Source Voltage VDS Thermal Characteristics Thermal resistance, junction - case RthJC Fig. 17 Figures Figure 1: Typical Output Characteristics at 25 °C Jun 2014 Figure 2: Typical Output Characteristics at 125 °C http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/ Pg2 of 8 GA05JT12-263 Figure 3: Typical Output Characteristics at 175 °C Figure 4: Typical Gate Source I-V Characteristics vs. Temperature Figure 5: Normalized On-Resistance and Current Gain vs. Temperature Figure 6: Typical Blocking Characteristics Figure 7: Input, Output, and Reverse Transfer Capacitance Figure 8: Output Capacitance Stored Energy Jun 2014 http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/ Pg3 of 8 GA05JT12-263 2 Figure 9: Typical Turn On Energy Losses and Switching Times vs. Temperature Figure 10: Typical Turn Off Energy Losses and Switching Times vs. Temperature Figure 11: Typical Turn On Energy Losses and Switching Times vs. Drain Current Figure 12: Typical Turn Off Energy Losses and Switching Times vs. Drain Current Figure 13: Transient Thermal Impedance Figure 14: Power Derating Curve – Representative values based on device conduction and switching loss. Actual losses will depend on gate drive conditions, device load, and circuit topology. Jun 2014 http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/ Pg4 of 8 GA05JT12-263 Figure 15: Turn-Off Safe Operating Area Jun 2014 Figure 16: Typical Gate Current Waveform http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/ Pg5 of 8 GA05JT12-263 Commercial Gate Drivers Compatible with GA05JT12-263 Manufacturer IXYS Avago Tech. Avago Tech. Concept IXYS IXYS IXYS IXYS Micrel Microsemi Texas Instruments 3 4 5 Optical Signal Isolation – 4 – – – – – – – Part Number IX2204 HCPL-316J HCPL-322J 1SC2060P IXD_604 IXD_614 IXD_630 IRFD630 MIC4452YN LX4510 UCC27322 Features Active Miller 3 Gate Clamping – – – – – – – – – Desaturation Detection – – – – – – – High Side Capability 4 Number of Outputs 2 1 1 1 2 1 1 1 1 1 1 – Active Miller Gate Clamping recommended for VEE = GND switching applications as SJT and/or output BJT secondary gate discharge path. – Features built-in galvanic signal and supply voltage isolation, replaces optical isolation on signal. – Specialized for high-temperature operation of gate drive circuitry. Silicon IGBT/MOSFET gate drivers (see partial list above) typically offer sufficient gate currents to drive the GA05JT12-263. Specific product information should be obtained from the individual product manufacturers. The GA05JT12-263 can be driven similar to silicon IGBTs or MOSFETs in which a gate driver IC is used to supply positive gate current peaks to the device at turn-on and negative current peaks at turn-off. Unlike the IGBT or MOSFET, the GA05JT12-263 also requires a continuous gate current for the device to remain on after the initial current peak. An example gate current waveform for the GA05JT12-263 is shown in Fig. 16. Single-Level SJT Gate Drive Producing the necessary gate current peaks and continuous currents can be accomplished by using a gate drive circuit shown in Fig. 17. The gate driver output node is connected to an optional NPN/PNP silicon BJT pair in a totem pole configuration which may provide higher gate current to the SJT gate. The NPN/PNP pair are controlled by the gate drive IC connected through base resistor Rb. The pair’s output at node N1 is connected to gate resistor RG(EXT) and capacitor CG located in parallel and connected to the SJT gate terminal. The gate resistor determines the continuous gate current. The gate capacitor produces positive and negative current peaks, which enable fast charging and discharging of the SJT’s terminal capacitances. Additional detail on the single-level SJT gate driving technique is discussed in GeneSiC Semiconductor Application Note AN-10A. (http://www.genesicsemi.com/references/product-notes) Figure 17: Single-Level SJT Gate Diver Configuration (External signal isolation recommended for non-isolated gate driver ICs.) Single-Level Gate Drive Conditions Values Parameter Supply Voltage Negative Supply Voltage Output Current, Peak Output Current, Continuous Symbol Conditions VCC VEE IOUT, pk IOUT Package Limited Package Limited, T = 175°C RG(EXT) CG Q1, Q2 VCC = 20 V, IG ≈ 0.5 A, T = 175°C VCC = 20 V, IG,pk ≈ 2.0 A, T = 175°C Range Typical 6 – 30 -10 – GND 0.7 – 3 0.1 – 1.0 15 – 18 -5 0.75 0.25 Peak SJT 6 Performance ≥ 25 ≤ -5 ≥1 ≥ 0.3 Units ≤ 20 ≥ 10 Ω nF V V A A Output Gate Components Gate Resistance, External Gate Capacitance Output BJT Buffer (Optional) 6 7 20 5 – 30 10 7 2N6107/2N6292 pair or equivalent – Achieves lowest SJT device energy losses (Etot) and fastest switching times (tr, tf). – Representative complimentary BJT pair with IC ≥ 5 A and VCEO ≥ 60 V. Jun 2014 http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/ Pg6 of 8 GA05JT12-263 Two-Level SJT Gate Drive The GA05JT12-263 can also be driven with a gate drive circuit shown in Fig. 22, in which two gate drive ICs and NPN/PNP pairs are operated with different supply voltage levels (VGH, VGL) in order to minimize gate drive losses. By using a separate lower voltage output gate driver IC connected to gate resistor RG(EXT), the power consumption of the continuous current is reduced. Additional detail on the two-level SJT gate driving technique is discussed in GeneSiC Semiconductor Application Note AN-10B. (http://www.genesicsemi.com/references/product-notes) Figure 22: Two-Level SJT Gate Diver Configuration for Reduced Drive Losses (External signal isolation recommended for nonisolated gate driver ICs.) Two-Level Gate Drive Conditions Values Parameter Supply Voltage, High Level Driver Supply Voltage, Low Level Driver Negative Supply Voltage Output Current, Peak Output Current, Continuous Symbol Conditions 9 VCC (VGH ) 9 VCC(VGL ) VEE IOUT, pk IOUT Package Limited Package Limited, T = 175 oC RG(EXT) CG Q1, Q2 VGL = 6.0 V, IG ≈ 0.5 A, T = 175 oC VGH = 20 V, IG,pk ≈ 2.0 A, T = 175 oC Range Typical 10 – 30 5–8 -10 – GND 0.7 – 3 15 – 18 6.0 -5 2.0 0.5 Peak SJT 8 Performance ≥ 20 ≥ 6.5 ≤ -5 ≥ 2.0 ≥ 0.5 Units V V V A A Output Gate Components Gate Resistance, External Gate Capacitance Output BJT Buffer (Optional) 8 – Achieves lowest SJT device energy losses (Etot) and fastest switching times (tr, tf). 9 – Consult application note AN-10B for more information on parameters VGH and VGL. 10 1.0 5 – 30 10 10 2N6107/2N6292 pair or equivalent ≤ 1.0 ≥ 10 Ω nF – Complimentary BJT pair with IC ≥ 5 A and VCEO ≥ 60 V Jun 2014 http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/ Pg7 of 8 GA05JT12-263 Package Dimensions: TO-263 PACKAGE OUTLINE NOTE 1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER. 2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS Revision History Date Revision Comments 2014/06/20 0 Initial release Supersedes Published by GeneSiC Semiconductor, Inc. 43670 Trade Center Place Suite 155 Dulles, VA 20166 GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice. GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any intellectual property rights is granted by this document. Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal injury and/or property damage. Jun 2014 http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/ Pg8 of 8 GA05JT12-263 SPICE Model Parameters This is a secure document. Please copy this code from the SPICE model PDF file on our website (www.genesicsemi.com/images/products_sic/sjt/GA05JT12-263_SPICE.pdf) into LTSPICE (version 4) software for simulation of the GA05JT12-263. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 20-JUN-2014 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155 * Dulles, VA 20166 * * COPYRIGHT (C) 2014 GeneSiC Semiconductor Inc. * ALL RIGHTS RESERVED * * These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY * OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED * TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A * PARTICULAR PURPOSE." * Models accurate up to 2 times rated drain current. * .model GA05JT12 NPN + IS 5.0E-47 + ISE 1.25E-28 + EG 3.2 + BF 80 + BR 0.55 + IKF 200 + NF 1 + NE 2 + RB 14.5 + RE 0.01 + RC 0.23 + CJC 2.16E-10 + VJC 3.656 + MJC 0.4717 + CJE 5.021E-10 + VJE 2.95 + MJE 0.4867 + XTI 3 + XTB -1.0 + TRC1 1.050E-2 + VCEO 1200 + ICRATING 5 + MFG GeneSiC_Semiconductor * * End of GA05JT12 SPICE Model Jun 2014 http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/ Pg1 of 1