IRF6217PbF-1
HEXFET® Power MOSFET
VDS
-150
RDS(on) max
(@VGS = -10V)
Qg (typical)
ID
(@TA = 25°C)
V
A
D
S
1
8
S
2
7
D
6
D
5
D
2.4
Ω
6
nC
S
3
-0.7
A
G
4
SO-8
Top View
Features
Benefits
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
Base Part Number
Package Type
IRF6217PbF-1
SO-8
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
⇒
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Orderable Part Number
IRF6217PbF-1
IRF6217TRPbF-1
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
Units
-0.7
-0.5
-5.0
2.5
0.02
± 20
4.5
-55 to + 150
A
W
W/°C
V
V/ns
°C
300 (1.6mm from case )
Thermal Resistance
Symbol
RθJL
RθJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
Max.
Units
–––
–––
20
50
°C/W
Notes through are on page 8
1
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IRF6217PbF-1
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
V(BR)DSS
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
-150
–––
–––
-3.0
–––
–––
–––
–––
Typ.
–––
-0.17
–––
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
VGS = 0V, ID = -250μA
––– V/°C Reference to 25°C, I D = -1mA
2.4
Ω
VGS = -10V, ID = -0.42A
-5.0
V
VDS = VGS, ID = -250μA
-25
VDS = -150V, VGS = 0V, TJ = 25°C
μA
-250
VDS = -120V, VGS = 0V, TJ = 125°C
-100
VGS = -20V
nA
100
VGS = 20V
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
0.55
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
6.0
1.6
2.8
12
7.2
14
16
150
30
10
150
15
45
Max. Units
Conditions
–––
S
VDS = -50V, ID = -0.42A
9.0
ID = -0.42A
2.4
nC
VDS = -120V
4.2
VGS = -10V,
–––
VDD = -75V
–––
ID = -0.42A
ns
–––
RG = 6.2Ω
–––
VGS = -10V
–––
VGS = 0V
–––
VDS = -25V
–––
pF
ƒ = 1.0KHz
–––
VGS = 0V, VDS = -1.0V, ƒ = 1.0KHz
–––
VGS = 0V, VDS = -120V, ƒ = 1.0KHz
–––
VGS = 0V, VDS = 0V to -120V
Avalanche Characteristics
Parameter
EAS
IAR
Single Pulse Avalanche Energy
Avalanche Current
Typ.
Max.
Units
–––
–––
15
-1.4
mJ
A
Diode Characteristics
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
IS
ISM
VSD
trr
Qrr
2
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Min. Typ. Max. Units
–––
–––
-1.8
–––
–––
-5.0
–––
–––
–––
–––
51
86
-1.6
77
130
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = -0.42A, VGS = 0V
TJ = 25°C, IF = -0.42A
di/dt = -100A/μs
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D
S
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IRF6217PbF-1
-I D, Drain-to-Source Current (A)
TOP
BOTTOM
10
VGS
-15V
-12V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
TOP
-I D, Drain-to-Source Current (A)
10
1
-5.0V
0.1
20μs PULSE WIDTH
T J= 25 ° C
0.01
0.1
1
10
BOTTOM
VGS
-15V
-12V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
1
0.1
-5.0V
20μs PULSE WIDTH
T J= 150 ° C
0.01
0.1
100
1
10
100
-V DS, Drain-to-Source Voltage (V)
-V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
10
2.5
I D = -0.70A
TJ = 150 ° C
0.1
V DS= -50V
20μs PULSE WIDTH
0.01
4
5
7
8
9
11
12
-V GS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
3
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(Normalized)
1
RDS(on) , Drain-to-Source On Resistance
-I D, Drain-to-Source Current (A)
2.0
TJ = 25 ° C
1.5
1.0
0.5
V GS = -10V
0.0
-60
-40
-20
0
20
40
60
TJ , Junction Temperature
80
100
120
140
( ° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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160
IRF6217PbF-1
10000
ID = -0.42A
10
-V GS , Gate-to-Source Voltage (V)
Ciss
100
Coss
10
Crss
1
8
6
4
2
0
1
10
100
0
1000
4
6
8
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
10
100
-I D , Drain-to-Source Current (A)
-I SD, Reverse Drain Current (A)
2
QG , Total Gate Charge (nC)
-VDS, Drain-to-Source Voltage (V)
TJ = 150 ° C
1
TJ = 25 ° C
V GS= 0 V
0.1
0.2
0.6
0.9
1.3
-V SD,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
VDS = -120V
VDS = -75V
VDS = -30V
Coss = Cds + Cgd
1000
C, Capacitance(pF)
12
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
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OPERATION IN THIS AREA
LIMITED BY R DS(on)
10
1
100μsec
1msec
0.1
10msec
Tc = 25°C
Tj = 150°C
Single Pulse
0.01
1.6
1
10
100
1000
-V DS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF6217PbF-1
1.0
RD
VDS
VGS
0.8
D.U.T.
RG
-
-I D , Drain Current (A)
+
V DD
0.6
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
0.4
Fig 10a. Switching Time Test Circuit
0.2
VDS
90%
0.0
25
50
75
100
TC , Case Temperature
125
150
( ° C)
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
10%
VGS
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
(Z thJA )
100
D = 0.50
0.20
10
Thermal Response
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P DM
1
t1
t2
Notes:
1. Duty factor D =
2. Peak T
0.1
0.0001
0.001
0.01
t1/ t 2
J = P DM x Z thJA
0.1
+T A
1
10
t 1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
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1.94
R DS(on) , Drain-to -Source On Resistance ( Ω)
RDS (on) , Drain-to-Source On Resistance ( Ω)
IRF6217PbF-1
1.92
1.90
1.88
VGS = -10V
1.86
1.84
1.82
1.80
0.00
0.25
0.50
0.75
1.00
1.25
9.00
8.00
7.00
6.00
5.00
4.00
ID = -0.7A
3.00
2.00
1.00
1.50
4.5
6.0
7.5
9.0
10.5
12.0
13.5
15.0
-V GS, Gate -to -Source Voltage (V)
-I D , Drain Current (A)
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
QG
-VGS
50KΩ
.2μF
12V
QGS
.3μF
QGD
35
D.U.T.
+VDS
VG
TOP
VGS
30
Charge
-3mA
ID
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
L
VDS
I AS
D.U.T
RG
IAS
-20V
tp
VDD
A
DRIVER
0.01Ω
EAS , Single Pulse Avalanche Energy (mJ)
BOTTOM
IG
25
20
15
10
5
0
25
V(BR)DSS
75
100
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125
( ° C)
15V
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
6
50
Starting Tj, Junction Temperature
tp
ID
-0.6A
-1.1A
-1.4A
Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
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150
IRF6217PbF-1
SO-8 Package Outline(Mosfet & Fetky)
Dimensions are shown in milimeters (inches)
D
DIM
B
5
A
8
6
7
6
H
E
1
2
3
0.25 [.010]
4
A
MIN
.0532
.0688
1.35
1.75
A1 .0040
e
e1
8X b
0.25 [.010]
A
MAX
0.25
.0098
0.10
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BAS IC
1.27 BASIC
.025 BAS IC
0.635 BAS IC
e1
6X
MILLIMETERS
MAX
A
5
INCHES
MIN
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
K x 45°
C
A1
y
0.10 [.004]
8X c
8X L
7
C A B
F OOTPRINT
NOT ES:
1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994.
8X 0.72 [.028]
2. CONT ROLLING DIMENSION: MILLIMET ER
3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ].
4. OUT LINE CONFORMS T O JEDEC OUT LINE MS-012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS .
MOLD PROT RUSIONS NOT T O EXCEED 0.15 [.006].
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS .
MOLD PROT RUSIONS NOT T O EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENS ION IS T HE LENGT H OF LEAD FOR S OLDERING T O
A S UBS T RAT E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information
EXAMPLE: T HIS IS AN IRF7101 (MOSFET)
INT ERNATIONAL
RECTIFIER
LOGO
XXXX
F 7101
DAT E CODE (YWW)
P = DIS GNATES LEAD - FREE
PRODUCT (OPT IONAL)
Y = LAST DIGIT OF THE YEAR
WW = WEEK
A = AS S EMBLY S ITE CODE
LOT CODE
PART NUMBER
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
7
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IRF6217PbF-1
SO-8 Tape and Reel (Dimensions are shown in millimeters (inches))
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 15mH, RG = 25Ω, IAS = -1.4A.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board.
†
Qualification information
Industrial
Qualification level
Moisture Sensitivity Level
(per JE DEC JE S D47F
SO-8
RoHS compliant
††
guidelines)
MS L1
††
(per JE DE C J-S TD-020D )
Yes
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
8
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