BAT54L Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. • Extremely Fast Switching Speed • Low Forward Voltage − 0.35 Volts (Typ) @ IF = 10 mAdc • NSV Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com 30 VOLTS SILICON HOT−CARRIER DETECTOR AND SWITCHING DIODES MAXIMUM RATINGS (TJ = 125°C unless otherwise noted) Symbol Value Unit Reverse Voltage VR 30 Volts Forward Power Dissipation @ TA = 25°C Derate above 25°C PF 200 2.0 mW mW/°C Forward Current (DC) IF 200 Max mA Rating Non−Repetitive Peak Forward Current tp < 10 msec IFSM Repetitive Peak Forward Current Pulse Wave = 1 sec, Duty Cycle = 66% IFRM SOT−23 (TO−236) CASE 318 STYLE 8 3 CATHODE 1 ANODE mA 600 MARKING DIAGRAM mA 300 Junction Temperature TJ −55 to +125 °C Storage Temperature Range Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. JV3 M G G 1 JV3 M G = Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† BAT54LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel NSVBAT54LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 1997 October, 2016 − Rev. 14 Publication Order Number: BAT54LT1/D BAT54L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Reverse Breakdown Voltage (IR = 10 μA) Min Typ Max 30 − − − 7.6 10 − 0.5 2.0 − − − − − 0.22 0.29 0.35 0.41 0.52 0.24 0.32 0.40 0.50 0.80 − − 5.0 V(BR)R Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT Reverse Leakage (VR = 25 V) IR Forward Voltage (IF = 0.1 mA) (IF = 1.0 mA) (IF = 10 mA) (IF = 30 mA) (IF = 100 mA) VF Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, Figure 1) trr Unit Volts pF μAdc V ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 820 Ω +10 V 2k 100 μH 0.1 μF tr IF 0.1 μF tp T IF trr 10% T DUT 50 Ω OUTPUT PULSE GENERATOR 50 Ω INPUT SAMPLING OSCILLOSCOPE 90% iR(REC) = 1 mA IR VR INPUT SIGNAL OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2 BAT54L TYPICAL CHARACTERISTICS 100 IF, FORWARD CURRENT (mA) 1 25°C 85°C 10 1 50°C 1.0 25°C 0.1 0.0 −40°C −55°C 0.2 0.3 0.4 0.1 0.5 VF, FORWARD VOLTAGE (VOLTS) 0.6 Figure 2. Forward Voltage 1000 IR, REVERSE CURRENT (μA) TA = 150°C 100 TA = 125°C 10 TA = 85°C 1 TA = 25°C 0.1 0.01 0 5 15 25 10 20 VR, REVERSE VOLTAGE (VOLTS) 30 Figure 3. Leakage Current CT, TOATAL CAPACITANCE (pF) 14 12 10 8 6 4 2 0 0 5 10 15 20 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Total Capacitance www.onsemi.com 3 25 30 BAT54L PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 0.25 3 E 1 2 T HE DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW c SEE VIEW C MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE END VIEW RECOMMENDED SOLDERING FOOTPRINT* 3X 2.90 3X 0.90 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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