RoHS RoHS IRFF30 Series SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET 3.6A, 900Volts DESCRIPTION D The Nell IRFF30 is a three-terminal silicon device with current conduction capability of 3.6A, fast switching speed, low on-state resistance, breakdown voltage rating of 900V, and max. threshold voltage of 4 volts. They are designed for use in applications such as switched mode power supplies, DC to DC converters, motor control, circuits UPS and general purpose switching applications. G G D S D S TO-3PB (IRFF30B) TO-247AB (IRFF30C) D (Drain) FEATURES RDS(ON) = 3.70Ω @ VGS = 10V G (Gate) Ultra low gate charge(78nC Max.) Low reverse transfer capacitance (C RSS = 200pF typical) S (Source) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature PRODUCT SUMMARY ID (A) 3.6 VDSS (V) 900 RDS(ON) (Ω) 3.70 @ V GS = 10V QG(nC) max. 78 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) SYMBOL TEST CONDITIONS PARAMETER VALUE VDSS Drain to Source voltage T J =25°C to 150°C 900 V DGR Drain to Gate voltage R GS =20KΩ 900 V GS ID Gate to Source voltage UNIT V ±20 Continuous Drain Current (V GS =10V) T C =25°C 3.6 T C =100°C 2.3 A I DM Pulsed Drain current(Note 1) 14 I AR Avalanche current(Note 1) 3.6 E AR Repetitive avalanche energy(Note 1) l AR =3.6A, R GS =50Ω, V GS =10V E AS Single pulse avalanche energy(Note 2) l AS =3.6A, L =24mH 13 mJ dv/dt Peak diode recovery dv/dt(Note 3) Total power dissipation PD TJ T STG TL T C =25°C Derate above 25 ° C 1.5 V /ns 125 W 1.0 W /°C Operation junction temperature -55 to 150 Storage temperature -55 to 150 Maximum soldering temperature, for 10 seconds Mounting torque, #6-32 or M3 screw 1.6mm from case Page 1 of 7 ºC 300 10 (1.1) Note: 1. Repetitive rating: pulse width limited by junction temperature. 2 . l AS =3.6 A, L =24 mH , V DD =50 V , R G =25 Ω , starting T J =25 °C. 3 . I SD ≤ 3.6 A, di/dt ≤ 70 A/µs, V DD ≤ 600 V, T J ≤ 150 °C. www.nellsemi.com 170 lbf . in (N . m) IRFF30 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products THERMAL RESISTANCE SYMBOL PARAMETER Rth(j-c) Thermal resistance, junction to case Rth(c-s) Thermal resistance, case to heat sink Rth(j-a) Thermal resistance, junction to ambient MIN. TYP. MAX. UNIT 1.0 ºC/W 0.24 40 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified) SYMBOL TEST CONDITIONS PARAMETER MIN. TYP. MAX. UNIT STATIC V(BR)DSS ▲V (BR)DSS/▲T J I DSS Drain to source breakdown voltage I D = 250μA, V GS = 0V Breakdown voltage temperature coefficient I D = 1mA, V DS =V GS Drain to source leakage current 900 V 1.1 V/ºC V DS =900V, V GS =0V T C = 25°C 100 V DS =720V, V GS =0V T C =125°C 500 μA Gate to source forward leakage current V GS = 20V, V DS = 0V 100 Gate to source reverse leakage current V GS = -20V, V DS = 0V -100 R DS(ON) Static drain to source on-state resistance I D = 2.2A, V GS = 10V 3.70 Ω V GS(TH) Gate threshold voltage V GS =V DS , I D =250μA 2.0 4.0 V Forward transconductance V DS = 100V, l D = 2.2A 2.3 I GSS g fs nA S DYNAMIC C ISS Input capacitance C OSS Output capacitance C RSS Reverse transfer capacitance t d(ON) Turn-on delay time tr t d(OFF) tf QG Rise time Turn-off delay time 1200 V DS = 25V, V GS = 0V, f =1MHz pF 320 200 14 V DD = 450V, V GS = 10V I D = 3.6A, R G = 12Ω, R D = 120Ω (Note1,2) 25 ns 90 Fall time 30 Total gate charge Q GS Gate to source charge Q GD Gate to drain charge (Miller charge) LD Internal drain inductance LS Internal source inductance 78 V DD = 360V, V GS = 10V I D = 3.6A, (Note1,2) 10 nC 42 5 Between lead, 6mm(0.25”) form package and center of die contact nH 13 SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified) SYMBOL VSD Is (Is D ) TEST CONDITIONS PARAMETER MIN. TYP. MAX. UNIT V Diode forward voltage I SD = 3.6A, V GS = 0V 1.8 Continuous source to drain current Integral reverse P-N junction diode in the MOSFET 3.6 D (Drain) A I SM Pulsed source current 14 G (Gate) S (Source) t rr Reverse recovery time Q rr Reverse recovery charge I SD = 3.6A, V GS = 0V, dI F /dt = 100A/µs Note: 1. Pulse test: Pulse width ≤ 300 µs, duty cycle ≤ 2%. 2. Essentially independent of operating temperature. www.nellsemi.com Page 2 of 7 430 650 ns 1.4 2.1 μC RoHS RoHS IRFF30 Series SEMICONDUCTOR Nell High Power Products ORDERING INFORMATION SCHEME IRF B F30 MOSFET series N-Channel,IRF series Current and Voltage rating, ID & VDS 3.6A / 900V Package type B = TO-3PB C = TO-247AB ■ TYPICAL CHARACTERISTICS Fig.1 Typical output characteristics, T C =25°C V GS Top: 15V 10V 8V 7V 6V 5.5V 5V Bottorm: 4.5V 10 1 10 0 Drain current, l D (A) 10 1 Drain Current, l D (A) Fig.2 Typical transfer characteristics 4.5V 150ºC 25ºC 10 0 Note: 1. V DS = 100V 2. 20µs Pulse Test Note: 1. 20µs Pulse Test 2. T C = 25°C 10 0 4 10 2 10 1 Drain-Source voltage, V DS (V) 9 10 3.5 4.5V 10 0 Note: 1. 20µs Pulse Test 2. T C = 150°C 3.0 2.5 2.0 1.5 1.0 0.5 I D = 3.6A V GS = 10V 0.0 -60 -40 -20 10 2 10 1 0 20 40 60 80 100 120 140 160 Junction temperature, T j (°C) Drain-Source voltage, V DS (V) www.nellsemi.com 8 Fig.4 Normalized On-Resistance vs. Temperature Drain-Source On-Resistance, R Ds(ON) (Normalized) Drain Current, I D (A) V GS Top: 15V 10V 8V 7V 6V 5.5V 5V Bottorm: 4.5V 7 Gate-Source voltage, V GS (V) Fig.3 Typical output characteristics, T C =150°C 10 1 6 5 Page 3 of 7 IRFF30 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.5 Typical capacitance vs. Drain-to-Source voltage 3000 Reverse drain current,I SD (A) Capacitance (pF) 10 1 V GS = 0V, f = 1MHz C iss = C gs +C gd ( C ds shorted ) C oss = C ds +C gd C rss = C gd 2500 2000 C iss 1500 1000 C oss C rss 500 Fig.6 Typical source-drain diode forward voltage 10 0 150ºC 25ºC V GS = 0V 10 -1 0.4 0 10 1 10 0 0.8 0.9 Source- Drain voltage, V SD (V) Fig.7 Typical gate charge vs. gate-to-source voltage Fig.8 Maximum safe operating area 1.0 10 2 Operation in This Area is Limited by R DS(ON) V DS = 360V 16 V DS = 180V Drain current, l D (A) Gate-Source voltage, V GS (V) 0.7 Drain- Source voltage, V SD (V) 20 V DS = 90V 12 8 10 10µs 100µs 1 1ms Note: 1. T C = 25°C 2. T J = 150°C 3. Single Pulse 4 I D = 3.6 A 0 0.1 40 20 0 60 80 Fig.9 Maximum drain current vs. Case temperature 4 3 2 1 0 25 50 75 100 125 150 Case temperature, T C (°C) www.nellsemi.com 1 10 10ms 10 2 10 3 Drain-source voltage, V DS (V) Total gate charge, Q G (nC) Drain current, l D (A) 0.6 0.5 Page 4 of 7 10 4 IRFF30 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.10 Maximum effective transient thermal impedance, Junction-to-Case Thermal response R th(J-C) (t) 10 1 D ~ 0.5 PDM 0.2 t1 Single pulse (Thermal response) 0.1 0.05 0.02 0.01 0.1 t2 Notes: 1. Duty factor, D = t1/ t2 2. Peak TJ = PDM * Rth(j-c) +TC 10 -2 10 -4 10 -5 10 -3 10 -2 0.1 10 1 Rectangular pulse duration, t 1 (S) Fig.11a. Switching time test circuit Fig.11b. Switching time waveforms RD V DS V DS 90% V GS RG D.U.T. + - V DD 10V V GS Pulse width ≤ 1µs Duty Factor ≤ 0.1% 10% t d(ON) t d(OFF) tR Fig.12a. Unclamped lnductive test circuit Fig.12b. Unclamped lnductive waveforms L V DS tF BV DSS l AS RG D.U.T. l AS + V - DD l D(t) A 10V V DS(t) V DD tP 0.01Ω Time Vary t p to obtain required I AS www.nellsemi.com tp Page 5 of 7 RoHS RoHS IRFF30 Series SEMICONDUCTOR Nell High Power Products Fig.12c. Maximum avalanche energy vs. Drain current Single pulse energy, E AS (mJ) 400 lD 1.6A 2.3A BOTTOM 3.6A TOP 300 200 100 V DD = 50 V 0 50 25 75 100 150 125 Starting Junction temperature, T J (°C) Fig.13a. Basic gate charge waveform Fig.13b. Gate charge test circuit Current Regulator Same Type as D.U.T. V GS 50KΩ QG 0.2µF 12V 10V 0.3µF + Q GD Q GS D.U.T. V GS 3mA RG Charge RD Current Sampling Resistors Fig.14 Peak diode recovery dv/dt test circuit for N-Channel MOSFET D.U.T. Driver Gate Drive + Circuit Layout Considerations • Low Stray lnductance • Ground Plane • Low Leakage lnductance Current Transformer P.W. D= Period P.W. Period VGS=10V - * D.U.T. I SD Waveform + - - RG Reverse Recovery Current + Body Diode Forward Current di/dt D.U.T. VDS Waveform • • • • dv/dt controlled by R G Driver same type as D.U.T. l SD controlled by Duty Factor " D " D.U.T. -Device Under Test Re-Applied Voltage + - V DD Diode Recovery dv/dt Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% ISD *V GS = 5V for Logic Level Devices and 3V for drive devices www.nellsemi.com Page 6 of 7 - V DS IRFF30 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products 1.8 4.8±0.2 2.0±0.1 4.0 19.9±0.3 2.0 15.6±0.4 9.6 5.0 ±0 . 2 TO-3PB 2 4.0 max 20.0 min Φ3.2 ± 0,1 3 5.45±0.1 G D S 1 2 3 +0.2 1.05 -0.1 +0.2 0.65 -0.1 5.45±0.1 1.4 D (Drain) G (Gate) All dimensions in millimeters(inches) S (Source) TO-247AB 4.69 (0.185) 5.31 (0.209) 1.49 (0.059) 2.49 (0.098) 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) Drain 5.38 (0.212) 6.20 (0.244) 16.15 (0.242) 3.55 (0.138) 3.81 (0.150) G 4.50 (0.177)Max D S 2.87 (0.113) 3.12 (0.123) 1.65 (0.065) (TYP.) 2.13 (0.084) 19.81 (0.780) 20.32 (0.800) 0.40 (0.016) 0.79 (0.031) 1.01 (0.040) 1.40 (0.055) (TYP.) 5.45 (0.215) 5.45 (0.215) 2.21 (0.087) 2.59 (0.102) D (Drain) All dimensions in millimeters(inches) G (Gate) S (Source) www.nellsemi.com Page 7 of 7