ON MJD122 Complementary darlington power transistor Datasheet

MJD122, NJVMJD122
(NPN), MJD127,
NJVMJD127 (PNP)
Complementary Darlington
Power Transistor
DPAK For Surface Mount Applications
Designed for general purpose amplifier and low speed switching
applications.
Features
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SILICON
POWER TRANSISTOR
8 AMPERES
100 VOLTS, 20 WATTS
• Lead Formed for Surface Mount Applications in Plastic Sleeves
• Surface Mount Replacements for 2N6040−2N6045 Series,
•
•
•
•
•
•
TIP120−TIP122 Series, and TIP125−TIP127 Series
Monolithic Construction With Built−in Base−Emitter Shunt Resistors
High DC Current Gain: hFE = 2500 (Typ) @ IC = 4.0 Adc
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings:
♦ Human Body Model, 3B > 8000 V
♦ Machine Model, C > 400 V
NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
DPAK
CASE 369C
STYLE 1
COLLECTOR 2, 4
BASE
1
EMITTER 3
MARKING DIAGRAM
AYWW
J12xG
A
Y
WW
x
G
= Assembly Location
= Year
= Work Week
= 2 or 7
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
© Semiconductor Components Industries, LLC, 2013
September, 2016 − Rev. 15
1
Publication Order Number:
MJD122/D
MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
100
Vdc
Collector−Base Voltage
VCB
100
Vdc
Emitter−Base Voltage
VEB
5
Vdc
Collector−Emitter Voltage
Collector Current
Continuous
Peak
IC
Base Current
IB
Total Power Dissipation
@ TC = 25°C
Derate above 25°C
PD
Total Power Dissipation (Note 1)
@ TA = 25°C
Derate above 25°C
PD
Adc
8
16
120
20
0.16
Operating and Storage Junction Temperature Range
TJ, Tstg
mAdc
W
W/°C
1.75
0.014
W
W/°C
−65 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
Characteristic
RqJC
6.25
°C/W
Thermal Resistance, Junction−to−Ambient (Note1)
RqJA
71.4
°C/W
1. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
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2
MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Symbol
Characteristic
Min
Max
100
−
−
10
−
10
−
2
1000
100
12,000
−
−
−
2
4
−
4.5
−
2.8
4
−
Unit
OFF CHARACTERISTICS
VCEO(sus)
Collector−Emitter Sustaining Voltage
(IC = 30 mAdc, IB = 0)
Collector Cutoff Current
(VCE = 50 Vdc, IB = 0)
ICEO
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
ICBO
Emitter Cutoff Current
(VBE = 5 Vdc, IC = 0)
IEBO
Vdc
mAdc
mAdc
mAdc
ON CHARACTERISTICS
hFE
DC Current Gain
(IC = 4 Adc, VCE = 4 Vdc)
(IC = 8 Adc, VCE = 4 Vdc)
Collector−Emitter Saturation Voltage
(IC = 4 Adc, IB = 16 mAdc)
(IC = 8 Adc, IB = 80 mAdc)
VCE(sat)
Base−Emitter Saturation Voltage (Note 2)
(IC = 8 Adc, IB = 80 mAdc)
VBE(sat)
Base−Emitter On Voltage
(IC = 4 Adc, VCE = 4 Vdc)
VBE(on)
−
Vdc
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain−Bandwidth Product
(IC = 3 Adc, VCE = 4 Vdc, f = 1 MHz)
|hfe|
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
MJD127, NJVMJD127
MJD122, NJVMJD122
Cob
Small−Signal Current Gain
(IC = 3 Adc, VCE = 4 Vdc, f = 1 kHz)
hfe
MHz
pF
−
−
300
200
300
−
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
PD, POWER DISSIPATION (WATTS)
TA TC
2.5 25
2 20
TC
1.5 15
TA
SURFACE
MOUNT
1 10
0.5
5
0
0
25
50
75
100
T, TEMPERATURE (°C)
Figure 1. Power Derating
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3
125
150
MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP)
TYPICAL ELECTRICAL CHARACTERISTICS
PNP MJD127
NPN MJD122
20,000
20,000
VCE = 4 V
VCE = 4 V
10,000
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
10,000
7000
5000
TJ = 150°C
3000
2000
25°C
1000
700
500
300
200
0.1
-55°C
0.2
5000
TJ = 150°C
3000
2000
25°C
1000
-55°C
500
0.3
0.5 0.7
1
2
3
7
5
300
200
0.1
10
0.2
0.5 0.7
0.3
IC, COLLECTOR CURRENT (AMP)
1
2
3
5
7
10
IC, COLLECTOR CURRENT (AMP)
3
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 2. DC Current Gain
TJ = 25°C
2.6
IC = 2 A
4A
6A
2.2
1.8
1.4
1
0.3
0.5 0.7
1
2
3
5
7
10
20
30
3
TJ = 25°C
2.6
IC = 2 A
4A
6A
2.2
1.8
1.4
1
0.3
0.5 0.7
1
IB, BASE CURRENT (mA)
2
3
5
7
10
20 30
IB, BASE CURRENT (mA)
Figure 3. Collector Saturation Region
3
3
TJ = 25°C
TJ = 25°C
2.5
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
2.5
2
1.5
1
VBE @ VCE = 4 V
VBE(sat) @ IC/IB = 250
2
1.5
VBE @ VCE = 4 V
1
VCE(sat) @ IC/IB = 250
VCE(sat) @ IC/IB = 250
0.5
0.1
0.2 0.3
0.5 0.7
VBE(sat) @ IC/IB = 250
1
2
3
5
7
0.5
0.1
10
IC, COLLECTOR CURRENT (AMP)
0.2 0.3
0.5 0.7
1
2
3
IC, COLLECTOR CURRENT (AMP)
Figure 4. “On” Voltages
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4
5
7
10
MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP)
TYPICAL ELECTRICAL CHARACTERISTICS
NPN MJD122
+5
θV, TEMPERATURE COEFFICIENTS (mV/°C)
θV, TEMPERATURE COEFFICIENTS (mV/°C)
PNP MJD127
*IC/IB ≤ hFE/3
+4
+3
+2
+1
0
25°C to 150°C
qVC for VCE(sat)
-1
-2
-3
-55°C to 25°C
25°C to 150°C
qVB for VBE
-55°C to 25°C
-4
-5
0.1
0.2 0.3
1
2 3
0.5
IC, COLLECTOR CURRENT (AMP)
5
7
+5
+4
*IC/IB ≤ hFE/3
+3
25°C to 150°C
+2
-55°C to 25°C
+1
0
*qVC for VCE(sat)
-1
-2
-3
-4
-5
0.1
10
25°C to 150°C
qVB for VBE
-55°C to 25°C
0.2 0.3
0.5 0.7 1
2 3
IC, COLLECTOR CURRENT (AMP)
5
7
10
Figure 5. Temperature Coefficients
105
105
REVERSE
FORWARD
IC, COLLECTOR CURRENT (A)
μ
IC, COLLECTOR CURRENT (A)
μ
REVERSE
104
VCE = 30 V
103
102
TJ = 150°C
101
100°C
100
25°C
10-1
+0.6 +0.4 +0.2
0 -0.2 -0.4 -0.6 -0.8 -1
VBE, BASE-EMITTER VOLTAGE (VOLTS)
FORWARD
104
VCE = 30 V
103
102
TJ = 150°C
101
100
100°C
25°C
10-1
-0.6 -0.4 -0.2
0 +0.2 +0.4 +0.6 +0.8 +1
VBE, BASE-EMITTER VOLTAGE (VOLTS)
-1.2 -1.4
+1.2 +1.4
Figure 6. Collector Cut−Off Region
300
5000
3000
2000
200
TJ = 25°C
C, CAPACITANCE (pF)
hfe , SMALL-SIGNAL CURRENT GAIN
10,000
1000
500
300
200
TC = 25°C
VCE = 4 Vdc
IC = 3 Adc
100
50
30
20
10
2
5
100
70
Cib
50
PNP
NPN
1
Cob
10
20
50 100
f, FREQUENCY (kHz)
200
500 1000
30
0.1
PNP
NPN
0.2
0.5
1
2
5
10
VR, REVERSE VOLTAGE (VOLTS)
Figure 8. Capacitance
Figure 7. Small−Signal Current Gain
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5
20
50
100
MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP)
5
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1, MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
VCC
-30 V
RC SCOPE
RB
51
≈ 8 k ≈ 120
D1
+4V
25 ms
tf
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.1
FOR td AND tr, D1 IS DISCONNECTED
AND V2 = 0
tr, tf ≤ 10 ns
DUTY CYCLE = 1%
PNP
NPN
ts
1
t, TIME (s)
μ
TUT
V2
APPROX
+8 V
0
V1
APPROX
-12 V
3
2
0.2
FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES.
r(t), EFFECTIVE TRANSIENT
THERMAL RESISTANCE (NORMALIZED)
Figure 9. Switching Times Test Circuit
1
0.7
0.5
tr
VCC = 30 V
IC/IB = 250
IB1 = IB2
TJ = 25°C
td @ VBE(off) = 0 V
0.3
0.5 0.7 1
3
2
IC, COLLECTOR CURRENT (AMP)
5
7
10
Figure 10. Switching Times
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
0.05
0.03
SINGLE PULSE
RqJC(t) = r(t) RqJC
RqJC = 6.25°C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) qJC(t)
0.01
0.02
0.01
0.01
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1
2
3
5
10
t, TIME OR PULSE WIDTH (ms)
20
30
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
50
100
200 300
500
1000
IC, COLLECTOR CURRENT (AMP)
Figure 11. Thermal Response
20
15
10
500m
σ
5
3
2
0.5
0.3
0.2
5ms
BONDING WIRE LIMIT
THERMAL LIMIT
TC = 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMIT
CURVES APPLY BELOW RATED VCEO
0.1
0.05
0.03
0.02
100m
σ
1ms
TJ = 150°C
1
1
2
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 12 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
< 150_C. TJ(pk) may be calculated from the data in
Figure 11. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
3
5
7
10
20
dc
30
50 70 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 12. Maximum Forward Bias
Safe Operating rea
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MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP)
COLLECTOR
PNP
COLLECTOR
NPN
BASE
BASE
≈8k
≈ 120
≈8k
EMITTER
≈ 120
EMITTER
Figure 13. Darlington Schematic
ORDERING INFORMATION
Package Type
Shipping†
MJD122G
DPAK
(Pb−Free)
75 Units / Rail
MJD122T4G
DPAK
(Pb−Free)
2,500 / Tape & Reel
NJVMJD122T4G*
DPAK
(Pb−Free)
2,500 / Tape & Reel
MJD127G
DPAK
(Pb−Free)
75 Units / Rail
MJD127T4G
DPAK
(Pb−Free)
2,500 / Tape & Reel
NJVMJD127T4G*
DPAK
(Pb−Free)
2,500 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable
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7
MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP)
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
7. OPTIONAL MOLD FEATURE.
A
E
C
A
b3
B
c2
4
L3
Z
D
1
2
H
DETAIL A
3
L4
NOTE 7
c
SIDE VIEW
b2
e
b
TOP VIEW
0.005 (0.13)
M
C
Z
H
L2
GAUGE
PLANE
C
L
L1
DETAIL A
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
BOTTOM VIEW
Z
SEATING
PLANE
BOTTOM VIEW
A1
ALTERNATE
CONSTRUCTIONS
ROTATED 905 CW
2.58
0.102
5.80
0.228
3.00
0.118
1.60
0.063
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.72
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.90 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
SOLDERING FOOTPRINT*
6.20
0.244
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.028 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.114 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
6.17
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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MJD122/D