To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. 2. 3. 4. 5. 6. 7. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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H7P0601DL, H7P0601DS Silicon P Channel MOS FET High Speed Power Switching REJ03G0044-0100Z Rev.1.00 Aug.05.2003 Features • Low on-resistance RDS(on) = 40 mΩ typ. • Low drive current • 4.5 V gate drive device can driven from 5 V source Outline DPAK-2 D DPAK-S 4 4 G 1 2 3 H7P0601DS S 1 2 3 H7P0601DL 1. Gate 2. Drain 3. Source 4. Drain Rev.1.00, Aug.05.2003, page 1 of 10 H7P0601DL, H7P0601DS Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Drain to source voltage VDSS –60 V Gate to source voltage VGSS ±20 V Drain current ID –20 A Note1 Drain peak current ID (pulse) –80 A Body-drain diode reverse drain current IDR –20 A –12 A Avalanche current IAP Note3 Avalanche energy EAR Note3 Channel dissipation Pch Note2 Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Rev.1.00, Aug.05.2003, page 2 of 10 12.3 mJ 25 W H7P0601DL, H7P0601DS Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS –60 — — V ID = –10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 Zero gate voltage drain current IDSS — — –10 µA VDS = –60 V, VGS = 0 Gate to source cutoff voltage VGS(off) –1.0 — –2.5 V ID = –1 mA, VDS = –10 V Static drain to source on state resistance RDS(on) — 40 50 mΩ ID = –10 A, VGS = –10 V Note1 — 60 85 mΩ ID = –5 A, VGS = –4.5 V Note1 Forward transfer admittance |yfs| 7.2 12 — S ID = –10 A, VDS = –10 V Note1 Input capacitance Ciss — 2200 — pF Output capacitance Coss — 220 — pF VDS = –10 V VGS = 0 f = 1 MHz Reverse transfer capacitance Crss — 130 — pF Total gate charge Qg — 37 — nC Gate to source charge Qgs — 6.5 — nC Gate to drain charge Qgd — 8 — nC Turn-on delay time td(on) — 25 — ns Rise time tr — 85 — ns Turn-off delay time td(off) — 70 — ns Fall time tf — 15 — ns Body-drain diode forward voltage VDF — 0.95 — V IF = –20 A, VGS = 0 — 30 — ns IF = –20 A, VGS = 0 diF/dt = 100 A/µs Body-drain diode reverse recovery trr time Note: 1. Pulse test Rev.1.00, Aug.05.2003, page 3 of 10 VDD = –25 V VGS = –10 V ID = –20 A VGS = –10 V, ID = –10 A RL = 3.0 Ω Rg = 4.7 Ω H7P0601DL, H7P0601DS Main Characteristics Power vs. Temperature Derating −100 Drain Current ID (A) 40 30 20 10 10 µ 0µ s s 10 −10 −3 (T DC c= −1 Operation in this area PW = 10 1m s (1 er sh a ot) 25 tio °C n ) Op ms −0.3 is limited by RDS(on) −0.1 −0.03 0 25 50 75 Case Temperature −50 Drain Current ID (A) Maximum Safe Operation Area −30 −40 100 125 150 Tc (°C) Typical Output Characteristics −10 V −8 V −6 V −20 0 −50 Pulse Test −5 V −30 −10 Ta = 25°C −0.01 −3 −0.1 −0.3 −1 −10 −30 −100 Drain to Source Voltage VDS (V) −4 V V GS = −2 V −3 V −2 −4 −6 −8 −10 Drain to Source Voltage VDS (V) Rev.1.00, Aug.05.2003, page 4 of 10 Drain Current ID (A) Channel Dissipation Pch (W) 50 −40 Typical Transfer Characteristics V DS = -10 V Pulse Test 75°C 25°C Tc = -75°C −30 −20 −10 0 −4 −6 −8 −2 Gate to Source Voltage VGS (V) H7P0601DL, H7P0601DS −0.8 −0.6 ID = −10 A −0.4 −2 A −12 −4 −8 Gate to Source Voltage −16 0.1 −2 A, −5 A ID = −10 A VGS = −4.5 V 0.04 ID = −10 A −2 A, −5 A VGS = −10 V 0 50 Case Temperature 100 Tc (°C) Rev.1.00, Aug.05.2003, page 5 of 10 −10 V 0.01 −1 −2 VGS (V) 0.12 0 −50 0.2 0.02 −20 Static Drain to Source on State Resistance vs. Temperature 0.16 Pulse Test 0.08 Static Drain to Source on State Resistance vs. Drain Current 1 Pulse Test 0.5 VGS = −4.5 V 0.05 −5 A −0.2 0 0 Drain to Source on State Resistance RDS(on) (Ω) Pulse Test 150 −5 −10 −20 −50 −100 Drain Current ID (A) Forward Transfer Admittance vs. Drain Current Forward transfer Admittance |yfs| (S) Drain to Source on State Resistance RDS(on) (Ω) Drain to Source Saturation Voltage VDS(on) (V) −1 Drain to Source Saturation Voltage vs. Gate to Source Voltage 100 30 VDS = −10 V Pulse Test Tc = −25°C 10 25°C 3 75°C 1 0.3 0.1 0.1 0.3 1 3 10 30 Drain Current ID (A) 100 H7P0601DL, H7P0601DS Body-Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 10000 300 Capacitance C (pF) Reverse Recovery Time trr (ns) 1000 100 30 10 3 3000 300 Crss 30 10 0 −8 −60 −80 0 VDD = −50 V −25 V −10 V 16 32 Gate Charge −12 VGS 48 64 Qg (nc) Rev.1.00, Aug.05.2003, page 6 of 10 −16 80 Switching Time t (ns) VDS VGS (V) −4 −40 1000 0 Gate to Source Voltage VDS (V) Drain to Source Voltage −20 −5 −10 −15 −20 −25 Drain to Source Voltage VDS Dynamic Input Characteristics ID = −20 A Coss 100 1 -0.1 -0.3 -1 -3 -10 -30 -100 Reverse Drain Current IDR (A) VDD = −10 V −25 V −50 V Ciss 1000 diF/dt = 100 A/µs VGS = 0, Ta = 25°C 0 VGS = 0 f = 1 MHz −30 (V) Switching Characteristics VGS = -10 V, VDS = −30 V Pw = 5 µs, duty < 1 % 300 Rg = 4.7 Ω tr t d(off) 100 t d(on) 30 tf 10 30 1 0.1 0.3 1 3 Drain Current 10 ID 30 (A) 100 H7P0601DL, H7P0601DS Repetitive Avalanche Energy EAR (mJ) Reverse Drain Current IDR (A) −50 Maximum Avalanche Energy vs. Channel Temperature Drating Reverse Drain Current vs. Source to Drain Voltage −40 −30 −20 −10 V −10 −5 V VGS = 0, 5 V Pulse Test 0 −0.4 −0.8 −1.2 Source to Drain Voltage −1.6 −2.0 20 IAP = −12 A VDD = −25 V duty < 0.1 % Rg > 50 Ω 16 12 8 4 0 25 50 VSD (V) Avalanche Test Circuit 100 125 EAR = 1 2 2 L • I AP • I AP Monitor VDSS VDSS - V DD V (BR)DSS I AP Rg D. U. T V DS VDD ID Vin -15 V 50Ω 0 Rev.1.00, Aug.05.2003, page 7 of 10 150 Avalanche Waveform L V DS Monitor 75 Channel Temperature Tch (°C) VDD H7P0601DL, H7P0601DS Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γs (t) 1 D=1 0.5 0.2 0.1 0.1 5 0.0 02 0. θch − c(t) = γs (t) • θch − c θch − c = 5°C/W, Ta = 25°C 0.01 e uls tp o 1sh PDM D= PW T PW T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 100 1000 Pulse Width PW (S) Switching Time Test Circuit Vout Monitor Vin Monitor Rg Switching Time Waveform Vin 10% D.U.T. RL 90% Vin -10 V V DD = -30 V Vout td(on) Rev.1.00, Aug.05.2003, page 8 of 10 90% 90% 10% 10% tr td(off) tf H7P0601DL, H7P0601DS Package Dimensions • H7P0601DL As of January, 2003 1.7 ± 0.5 Unit: mm 2.3 ± 0.2 0.55 ± 0.1 4.7 ± 0.5 1.2 ± 0.3 16.2 ± 0.5 1.15 ± 0.1 0.8 ± 0.1 (0.7) 3.1 ± 0.5 5.5 ± 0.5 6.5 ± 0.5 5.4 ± 0.5 0.55 ± 0.1 0.55 ± 0.1 2.29 ± 0.5 2.29 ± 0.5 Package Code JEDEC JEITA Mass (reference value) Rev.1.00, Aug.05.2003, page 9 of 10 DPAK (L)-(2) — — 0.42 g H7P0601DL, H7P0601DS • H7P0601DS As of January, 2003 6.5 ± 0.5 5.4 ± 0.5 (0.1) 2.3 ± 0.2 0.55 ± 0.1 (5.1) (5.1) (0.1) 1.2 Max 5.5 ± 0.5 1.5 ± 0.5 Unit: mm 0 – 0.25 2.5 ± 0.5 (1.2) 1.0 Max. 2.29 ± 0.5 0.8 ± 0.1 0.55 ± 0.1 2.29 ± 0.5 Package Code JEDEC JEITA Mass (reference value) Rev.1.00, Aug.05.2003, page 10 of 10 DPAK (S) — Conforms 0.28 g Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. 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