ON NJVMJD45H11T4G Complementary power transistor Datasheet

MJD44H11,
NJVMJD44H11 (NPN),
MJD45H11,
NJVMJD45H11 (PNP)
Complementary Power
Transistors
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DPAK For Surface Mount Applications
SILICON
POWER TRANSISTORS
8 AMPERES
80 VOLTS, 20 WATTS
Designed for general purpose power and switching such as output or
driver stages in applications such as switching regulators, converters,
and power amplifiers.
Features
MARKING
DIAGRAMS
• Lead Formed for Surface Mount Application in Plastic Sleeves
(No Suffix)
• Straight Lead Version in Plastic Sleeves (“−1” Suffix)
• Electrically Similar to Popular D44H/D45H Series
• Low Collector Emitter Saturation Voltage −
•
•
•
•
•
•
4
1 2
VCE(sat) = 1.0 Volt Max @ 8.0 A
Fast Switching Speeds
Complementary Pairs Simplifies Designs
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings: Human Body Model, 3B u 8000 V
Machine Model, C u 400 V
NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These are Pb−Free Packages*
3
AYWW
J4
xH11G
DPAK
CASE 369C
STYLE 1
4
1
AYWW
J4
xH11G
2
3
A
Y
WW
J4xH11
G
IPAK
CASE 369D
STYLE 1
=
=
=
=
Assembly Location
Year
Work Week
Device Code
x = 4 or 5
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2012
August, 2012 − Rev. 14
1
Publication Order Number:
MJD44H11/D
MJD44H11, NJVMJD44H11 (NPN), MJD45H11, NJVMJD45H11 (PNP)
MAXIMUM RATINGS (TA = 25_C, common for NPN and PNP, minus sign, “−”, for PNP omitted, unless otherwise noted)
Rating
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current
− Continuous
− Peak
Symbol
Max
Unit
VCEO
80
Vdc
VEB
5
Vdc
IC
8
16
Adc
Total Power Dissipation
@ TC = 25°C
Derate above 25°C
PD
Total Power Dissipation (Note 1)
@ TA = 25°C
Derate above 25°C
PD
Operating and Storage Junction
Temperature Range
TJ, Tstg
20
0.16
W
W/°C
W
1.75
0.014
W/°C
−55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
6.25
°C/W
Thermal Resistance, Junction−to−Ambient (Note 1)
RqJA
71.4
°C/W
TL
260
°C
Lead Temperature for Soldering
1. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
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2
MJD44H11, NJVMJD44H11 (NPN), MJD45H11, NJVMJD45H11 (PNP)
ELECTRICAL CHARACTERISTICS
(TA = 25_C, common for NPN and PNP, minus sign, “−”, for PNP omitted, unless otherwise noted)
Characteristic
Symbol
Min
VCEO(sus)
80
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(IC = 30 mA, IB = 0)
Vdc
Collector Cutoff Current
(VCE = Rated VCEO, VBE = 0)
ICES
1.0
mA
Emitter Cutoff Current
(VEB = 5 Vdc)
IEBO
1.0
mA
Collector−Emitter Saturation Voltage
(IC = 8 Adc, IB = 0.4 Adc)
VCE(sat)
1
Vdc
Base−Emitter Saturation Voltage
(IC = 8 Adc, IB = 0.8 Adc)
VBE(sat)
1.5
Vdc
ON CHARACTERISTICS
DC Current Gain
(VCE = 1 Vdc, IC = 2 Adc)
hFE
DC Current Gain
(VCE = 1 Vdc, IC = 4 Adc)
60
−
40
DYNAMIC CHARACTERISTICS
Collector Capacitance
(VCB = 10 Vdc, ftest = 1 MHz)
MJD44H11, NJVMJD44H11G,/T4G/RLG
MJD45H11, NJVMJD45H11T4G/RLG
Gain Bandwidth Product
(IC = 0.5 Adc, VCE = 10 Vdc, f = 20 MHz) MJD44H11, NJVMJD44H11G,/T4G/RLG
MJD45H11, NJVMJD45H11T4G/RLG
Ccb
fT
pF
45
130
MHz
85
90
SWITCHING TIMES
Delay and Rise Times
(IC = 5 Adc, IB1 = 0.5 Adc)
Storage Time
(IC = 5 Adc, IB1 = IB2 = 0.5 Adc)
Fall Time
(IC = 5 Adc, IB1 = IB2 = 0.5 Adc
MJD44H11, NJVMJD44H11G,/T4G/RLG
MJD45H11, NJVMJD45H11T4G/RLG
MJD44H11, NJVMJD44H11G,/T4G/RLG
MJD45H11, NJVMJD45H11T4G/RLG
MJD44H11, NJVMJD44H11G,/T4G/RLG
MJD45H11, NJVMJD45H11T4G/RLG
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3
td + tr
ts
tf
ns
300
135
ns
500
500
ns
140
100
r(t), EFFECTIVE TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
MJD44H11, NJVMJD44H11 (NPN), MJD45H11, NJVMJD45H11 (PNP)
1
0.7
0.5
D = 0.5
0.3
0.2
0.2
RqJC(t) = r(t) RqJC
RqJC = 6.25°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) qJC(t)
0.1
0.1
0.07
0.05
0.05
0.02
0.01
0.03
0.02
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.01
0.01
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1
2 3
5
t, TIME (ms)
10
20
30
50
100
200 300
500
1k
Figure 1. Thermal Response
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 2 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150_C. TJ(pk) may be calculated from the data in
Figure 1. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
IC, COLLECTOR CURRENT (AMP)
20
10
500ms
5
3
2
dc
100ms
1ms
5ms
1
THERMAL LIMIT @ TC = 25°C
WIRE BOND LIMIT
0.5
0.3
0.1
0.05
1
50
5
7 10
20 30
3
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
70 100
Figure 2. Maximum Forward Bias
Safe Operating Area
TA TC
2.5 25
PD, POWER DISSIPATION (WATTS)
0.02
2 20
TC
1.5 15
TA
SURFACE
MOUNT
1 10
0.5
5
0
0
25
50
75
100
T, TEMPERATURE (°C)
Figure 3. Power Derating
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4
125
150
MJD44H11, NJVMJD44H11 (NPN), MJD45H11, NJVMJD45H11 (PNP)
1000
VCE = 1 V
VCE = 1 V
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
1000
150°C
25°C
100
10
−55°C
0.01
0.1
1
150°C
25°C
10
10
−55°C
100
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 4. MJD44H11 DC Current Gain
Figure 5. MJD45H11 DC Current Gain
1000
1000
hFE, DC CURRENT GAIN
150°C
25°C
10
VCE(sat), COLL−EMIT SATURATION VOLTAGE (V)
VCE = 4 V
−55°C
0.01
0.1
1
0.01
0.1
1
10
Figure 6. MJD44H11 DC Current Gain
Figure 7. MJD45H11 DC Current Gain
IC/IB = 20
150°C
0.5
0.4
25°C
0.3
0.2
−55°C
0.1
0.01
−55°C
100
IC, COLLECTOR CURRENT (A)
0.6
0
25°C
IC, COLLECTOR CURRENT (A)
0.8
0.7
150°C
10
10
VCE(sat), COLL−EMIT SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
VCE = 4 V
100
10
IC, COLLECTOR CURRENT (A)
0.1
1
10
0.8
IC/IB = 20
0.7
−55°C
0.6
0.5
0.4
25°C
0.3
150°C
0.2
0.1
0
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 8. MJD44H11 Saturation Voltage
VCE(sat)
Figure 9. MJD45H11 Saturation Voltage
VCE(sat)
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5
10
MJD44H11, NJVMJD44H11 (NPN), MJD45H11, NJVMJD45H11 (PNP)
1.4
1.0
0.8
−55°C
25°C
0.6
0.4
150°C
IC/IB = 20
0.2
0
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VBE(sat), BASE−EMIT SATURATION
VOLTAGE (V)
1.2
0.01
0.1
1
−55°C
0.8
25°C
0.6
150°C
0.4
IC/IB = 20
0.2
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Figure 10. MJD44H11 Saturation Voltage
VBE(sat)
Figure 11. MJD45H11 Saturation Voltage
VBE(sat)
1.8
TA = 25°C
1.6
1.4
1.2
1.0
0.8
0.6
IC = 8 A
0.4
1A
0.2 IC = 0.1 A 0.5 A
0
0.1
1
10
IC = 3 A
100
1000
10,000
2.0
1.8
TA = 25°C
1.6
1.4
1.2
1.0
0.8
IC = 8 A
0.6
IC = 3 A
0.4
0.2 I = 0.1 A 0.5 A
C
0
0.1
1
1A
10
100
1000
10,000
IB, BASE CURRENT (mA)
IB, BASE CURRENT (mA)
Figure 12. MJD44H11 Collector Saturation
Region
Figure 13. MJD45H11 Collector Saturation
Region
1000
C, CAPACITANCE (pF)
1000
C, CAPACITANCE (pF)
1.0
IC, COLLECTOR CURRENT (A)
2.0
Cob
100
10
1.2
0
10
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VBE(sat), BASE−EMIT SATURATION
VOLTAGE (V)
1.4
0.1
1
10
Cob
100
10
100
0.1
1
10
VR, REVERSE VOLTAGE (V)
VR, REVERSE VOLTAGE (V)
Figure 14. MJD44H11 Capacitance
Figure 15. MJD45H11 Capacitance
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6
100
MJD44H11, NJVMJD44H11 (NPN), MJD45H11, NJVMJD45H11 (PNP)
100
VCE = 2 V
10
0.01
fTau, CURRENT−GAIN−BANDWIDTH
PRODUCT
fTau, CURRENT−GAIN−BANDWIDTH
PRODUCT
100
0.1
1
10
10
VCE = 2 V
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 16. MJD44H11
Current−Gain−Bandwidth Product
Figure 17. MJD45H11
Current−Gain−Bandwidth Product
10
ORDERING INFORMATION
Device
Package Type
MJD44H11G
DPAK
(Pb−Free)
NJVMJD44H11G
DPAK
(Pb−Free)
MJD44H11−1G
DPAK−3
(Pb−Free)
MJD44H11RLG
DPAK
(Pb−Free)
NJVMJD44H11RLG
DPAK
(Pb−Free)
MJD44H11T4G
DPAK
(Pb−Free)
NJVMJD44H11T4G
DPAK
(Pb−Free)
MJD44H11T5G
DPAK
(Pb−Free)
MJD45H11G
DPAK
(Pb−Free)
MJD45H11−1G
DPAK−3
(Pb−Free)
MJD45H11RLG
DPAK
(Pb−Free)
NJVMJD45H11RLG
DPAK
(Pb−Free)
MJD45H11T4G
DPAK
(Pb−Free)
NJVMJD45H11T4G
DPAK
(Pb−Free)
Package
Shipping†
369C
75 Units / Rail
369D
1,800 / Tape & Reel
369C
2,500 / Tape & Reel
75 Units / Rail
369D
1,800 / Tape & Reel
369C
2,500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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7
MJD44H11, NJVMJD44H11 (NPN), MJD45H11, NJVMJD45H11 (PNP)
PACKAGE DIMENSIONS
DPAK
CASE 369C
ISSUE D
A
E
b3
c2
B
Z
D
1
L4
A
4
L3
b2
e
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
H
DETAIL A
3
c
b
0.005 (0.13)
M
H
C
L2
GAUGE
PLANE
C
L
SEATING
PLANE
A1
L1
DETAIL A
ROTATED 905 CW
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.101
5.80
0.228
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
3.0
0.118
1.6
0.063
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
6.172
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
8
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
MJD44H11, NJVMJD44H11 (NPN), MJD45H11, NJVMJD45H11 (PNP)
PACKAGE DIMENSIONS
IPAK
CASE 369D
ISSUE C
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
E
R
4
Z
A
S
1
2
3
−T−
SEATING
PLANE
K
J
F
D
G
H
3 PL
0.13 (0.005)
M
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
−−−
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
T
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MJD44H11/D