JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors MJE171 TRANSISTOR (PNP) TO – 126 FEATURES z Low Power Audio Amplifier z Low Current, High Speed Switching Applications 1. EMITTER 2. COLLECTOR 3. BASE Equivalent Circuit MJE 171 MJE171 'HYLFHFoGH ORDERING INFORMATION Part Number Package Packing Method Pack Quantity MJE171 TO-126 Bulk 200pcs/Bag MJE171-TU TO-126 Tube 60pcs/Tube MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current -3 A PC Collector Power Dissipation 1.5 .W Thermal Resistance From Junction To Ambient 83 ℃/W RθJA Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ www.cj-elec.com 1 D,Aug,2017 Ta =25 Я unless otherwise specified Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= -1mA,IE=0 -80 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -60 V Emitter-base breakdown voltage V(BR)EBO IE=-1mA,IC=0 -7 V Collector cut-off current ICBO VCB=-80V,IE=0 -100 nA Emitter cut-off current IEBO VEB=-7V,IC=0 -100 nA hFE(1) VCE=-1V, IC=-0.1A 50 hFE(2) VCE=-1V, IC=-0.5A 30 hFE(3) VCE=-1V, IC=-1.5A 12 DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage VCE(sat)(1) IC=-500mA,IB=-50mA -0.3 V VCE(sat)(2) IC=-1.5A,IB=-150mA -0.9 V VCE(sat)(3) IC=-3A,IB=-600mA -1.7 V IC=-1.5A,IB=-150mA -1.5 V -2 V -1.2 V VBE (sat) Base-emitter voltage VBE Transition frequency fT Collector output capacitance www.cj-elec.com 250 Cob IC=-3A,IB=-600mA VCE=-1V, IC=-500mA VCE=-10V,IC=-0.1A VCB=-10V,IE=0, f=0.1MHz 2 50 MHz 50 pF D,Aug,2017 Typical Characteristics Static Characteristic -0.25 hFE -2mA -1.8mA -0.20 DC CURRENT GAIN COLLECTOR CURRENT hFE 1000 IC —— COMMON EMITTER Ta=25℃ IC (A) -0.30 -1.6mA -1.4mA -0.15 -1.2mA -1mA -0.10 -0.8mA Ta=100℃ 100 Ta=25℃ -0.6mA -0.05 -0.4mA IB=-0.2mA -0.00 -0 -1 -2 -3 -4 COLLECTOR-EMITTER VOLTAGE VCEsat -500 —— VCE COMMON EMITTER VCE=-1V 10 -5 -1 -10 -100 IC VBEsat -1200 -3000 -1000 COLLECTOR CURRENT (V) IC (mA) IC —— BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) -1100 Ta=100℃ -100 Ta=25℃ -1000 -900 Ta=25℃ -800 -700 -600 Ta=100℃ -500 -400 -300 β=10 -10 -10 β=10 -200 -100 -1000 COLLECTOR CURRENT IC -3000 —— IC -1 -3000 -10 -100 COLLECTOR CURRENT (mA) VBE Cob/ Cib 1000 -1000 IC —— VCB/ VEB COMMON EMITTER VCE=-1V -1000 -3000 (mA) f=1MHz IE=0/IC=0 (pF) CAPACITANCE T= a 25 ℃ T= a 10 0℃ COLLCETOR CURRENT -10 100 Cob -1 -0.1 -200 -400 -600 -800 BASE-EMITER VOLTAGE fT 100 70 —— -1000 VBE 10 -0.1 -1200 -1 -10 REVERSE VOLTAGE (mV) IC PC 2000 —— V -30 (V) Ta VCE=-10V Ta=25℃ COLLECTOR POWER DISSIPATION PC (mW) (MHz) 80 fT 90 TRANSITION FREQUENCY Cib C -100 IC (mA) Ta=25℃ 60 50 40 30 20 1500 1000 500 10 0 -10 -20 -30 -40 -50 -60 COLLECTOR CURRENT www.cj-elec.com -70 IC -80 -90 0 -100 (mA) 25 50 75 AMBIENT TEMPERATURE 3 100 Ta 125 150 (℃ ) D,Aug,2017 TO-126 Package Outline Dimensions Symbol A A1 b b1 c D E e e1 h L L1 P Φ www.cj-elec.com Dimensions In Millimeters Min Max 2.500 2.900 1.100 1.500 0.660 0.860 1.170 1.370 0.450 0.600 7.400 7.800 10.600 11.000 2.290 TYP 4.480 4.680 0.000 0.300 15.300 15.700 2.100 2.300 3.900 4.100 3.000 3.200 4 Dimensions In Inches Min Max 0.098 0.114 0.043 0.059 0.026 0.034 0.046 0.054 0.018 0.024 0.291 0.307 0.417 0.433 0.090 TYP 0.176 0.184 0.000 0.012 0.602 0.618 0.083 0.091 0.154 0.161 0.118 0.126 D,Aug,2017