Jiangsu MJE171 To-126 plastic-encapsulate transistor Datasheet

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
MJE171
TRANSISTOR (PNP)
TO – 126
FEATURES
z Low Power Audio Amplifier
z Low Current, High Speed Switching Applications
1. EMITTER
2. COLLECTOR
3. BASE
Equivalent Circuit
MJE
171
MJE171 'HYLFHFoGH
ORDERING INFORMATION
Part Number
Package
Packing Method
Pack Quantity
MJE171
TO-126
Bulk
200pcs/Bag
MJE171-TU
TO-126
Tube
60pcs/Tube
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-80
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current
-3
A
PC
Collector Power Dissipation
1.5
.W
Thermal Resistance From Junction To Ambient
83
℃/W
RθJA
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
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1
D,Aug,2017
Ta =25 Я unless otherwise specified
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC= -1mA,IE=0
-80
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-10mA,IB=0
-60
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-1mA,IC=0
-7
V
Collector cut-off current
ICBO
VCB=-80V,IE=0
-100
nA
Emitter cut-off current
IEBO
VEB=-7V,IC=0
-100
nA
hFE(1)
VCE=-1V, IC=-0.1A
50
hFE(2)
VCE=-1V, IC=-0.5A
30
hFE(3)
VCE=-1V, IC=-1.5A
12
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE(sat)(1)
IC=-500mA,IB=-50mA
-0.3
V
VCE(sat)(2)
IC=-1.5A,IB=-150mA
-0.9
V
VCE(sat)(3)
IC=-3A,IB=-600mA
-1.7
V
IC=-1.5A,IB=-150mA
-1.5
V
-2
V
-1.2
V
VBE (sat)
Base-emitter voltage
VBE
Transition frequency
fT
Collector output capacitance
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250
Cob
IC=-3A,IB=-600mA
VCE=-1V, IC=-500mA
VCE=-10V,IC=-0.1A
VCB=-10V,IE=0, f=0.1MHz
2
50
MHz
50
pF
D,Aug,2017
Typical Characteristics
Static Characteristic
-0.25
hFE
-2mA
-1.8mA
-0.20
DC CURRENT GAIN
COLLECTOR CURRENT
hFE
1000
IC
——
COMMON
EMITTER
Ta=25℃
IC
(A)
-0.30
-1.6mA
-1.4mA
-0.15
-1.2mA
-1mA
-0.10
-0.8mA
Ta=100℃
100
Ta=25℃
-0.6mA
-0.05
-0.4mA
IB=-0.2mA
-0.00
-0
-1
-2
-3
-4
COLLECTOR-EMITTER VOLTAGE
VCEsat
-500
——
VCE
COMMON EMITTER
VCE=-1V
10
-5
-1
-10
-100
IC
VBEsat
-1200
-3000
-1000
COLLECTOR CURRENT
(V)
IC
(mA)
IC
——
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
-1100
Ta=100℃
-100
Ta=25℃
-1000
-900
Ta=25℃
-800
-700
-600
Ta=100℃
-500
-400
-300
β=10
-10
-10
β=10
-200
-100
-1000
COLLECTOR CURRENT
IC
-3000
——
IC
-1
-3000
-10
-100
COLLECTOR CURRENT
(mA)
VBE
Cob/ Cib
1000
-1000
IC
—— VCB/ VEB
COMMON EMITTER
VCE=-1V
-1000
-3000
(mA)
f=1MHz
IE=0/IC=0
(pF)
CAPACITANCE
T=
a 25
℃
T=
a 10
0℃
COLLCETOR CURRENT
-10
100
Cob
-1
-0.1
-200
-400
-600
-800
BASE-EMITER VOLTAGE
fT
100
70
——
-1000
VBE
10
-0.1
-1200
-1
-10
REVERSE VOLTAGE
(mV)
IC
PC
2000
——
V
-30
(V)
Ta
VCE=-10V
Ta=25℃
COLLECTOR POWER DISSIPATION
PC (mW)
(MHz)
80
fT
90
TRANSITION FREQUENCY
Cib
C
-100
IC
(mA)
Ta=25℃
60
50
40
30
20
1500
1000
500
10
0
-10
-20
-30
-40
-50
-60
COLLECTOR CURRENT
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-70
IC
-80
-90
0
-100
(mA)
25
50
75
AMBIENT TEMPERATURE
3
100
Ta
125
150
(℃ )
D,Aug,2017
TO-126 Package Outline Dimensions
Symbol
A
A1
b
b1
c
D
E
e
e1
h
L
L1
P
Φ
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Dimensions In Millimeters
Min
Max
2.500
2.900
1.100
1.500
0.660
0.860
1.170
1.370
0.450
0.600
7.400
7.800
10.600
11.000
2.290 TYP
4.480
4.680
0.000
0.300
15.300
15.700
2.100
2.300
3.900
4.100
3.000
3.200
4
Dimensions In Inches
Min
Max
0.098
0.114
0.043
0.059
0.026
0.034
0.046
0.054
0.018
0.024
0.291
0.307
0.417
0.433
0.090 TYP
0.176
0.184
0.000
0.012
0.602
0.618
0.083
0.091
0.154
0.161
0.118
0.126
D,Aug,2017
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