ON MMSD4148T1G Switching diode Datasheet

MMSD4148T1
Switching Diode
Features
•
•
•
•
•
SOD−123 Surface Mount Package
High Breakdown Voltage
Fast Speed Switching Time
Available in 8 mm Tape and Reel
Pb−Free Package is Available
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1
CATHODE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Continuous Reverse Voltage
VR
100
Vdc
Peak Forward Current
IF
200
mAdc
IFM(surge)
500
mAdc
Peak Forward Surge Current
2
ANODE
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board (Note 1)
TA = 25°C
Derate above 25°C
PD
425
mW
3.4
mW/°C
290
°C/W
Thermal Resistance Junction−to−Ambient
RJA
1
SOD−123
CASE 425
STYLE 1
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not normal
operating conditions) and are not valid simultaneously. If these limits are exceeded,
device functional operation is not implied, damage may occur and reliability may
be affected.
1. FR−5 = 1.0 oz Cu, 1.0 inz pad
DEVICE MARKING
51 d
51
d
= Specific Device Code
= Date Code
ORDERING INFORMATION
Package
Shipping†
MMSD4148T1
SOD−123
3000 / Tape & Reel
MMSD4148T1G
SOD−123
(Pb−Free)
3000 / Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
 Semiconductor Components Industries, LLC, 2005
April, 2005 − Rev. 5
1
Publication Order Number:
MMSD4148T1/D
MMSD4148T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
V(BR)
100
−
Vdc
IR
−
−
25
5.0
nAdc
Adc
Forward Voltage (IF = 10 mAdc)
VF
−
1000
mVdc
Diode Capacitance (VR = 0 Vdc, f = 1.0 MHz)
CD
−
4.0
pF
Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1)
trr
−
4.0
ns
OFF CHARACTERISTICS
Reverse Breakdown Voltage (IBR = 100 Adc)
Reverse Voltage Leakage Current
(VR = 20 Vdc)
(VR = 75 Vdc)
820 +10 V
2k
100 H
0.1 F
tr
IF
0.1 F
tp
t
IF
trr
10%
t
DUT
50 OUTPUT
PULSE
GENERATOR
50 INPUT
SAMPLING
OSCILLOSCOPE
90%
IR
VR
INPUT SIGNAL
1.
2.
3.
A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA.
Input pulse is adjusted so IR(peak) is equal to 10 mA.
tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
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2
iR(REC) = 1 mA
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
MMSD4148T1
100
10
I R, REVERSE CURRENT (A)
µ
10
TA = 85°C
TA = −40°C
1.0
TA = 125°C
1.0
TA = 85°C
0.1
TA = 55°C
0.01
TA = 25°C
TA = 25°C
0.1
0.2
0.4
0.6
0.8
1.0
0.001
1.2
0
10
20
30
VF, FORWARD VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Forward Voltage
Figure 3. Leakage Current
0.68
CD , DIODE CAPACITANCE (pF)
IF, FORWARD CURRENT (mA)
TA = 150°C
0.64
0.60
0.56
0.52
0
2
4
6
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
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3
8
40
50
MMSD4148T1
PACKAGE DIMENSIONS
SOD−123
PLASTIC PACKAGE
CASE 425−04
ISSUE C
A
ÂÂÂ
ÂÂÂ
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
C
H
1
K
INCHES
MIN
MAX
0.055
0.071
0.100
0.112
0.037
0.053
0.020
0.028
0.004
−−−
0.000
0.004
−−−
0.006
0.140
0.152
DIM
A
B
C
D
E
H
J
K
B
STYLE 1:
PIN 1. CATHODE
2. ANODE
E
2
MILLIMETERS
MIN
MAX
1.40
1.80
2.55
2.85
0.95
1.35
0.50
0.70
0.25
−−−
0.00
0.10
−−−
0.15
3.55
3.85
J
D
SOLDERING FOOTPRINT*
ÉÉ
ÉÉ
ÉÉ
0.91
0.036
2.36
0.093
4.19
0.165
ÉÉ
ÉÉ
ÉÉ
SCALE 10:1
1.22
0.048
mm inches
SOD−123
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
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MMSD4148T1/D
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