ASI HF20-12S Npn silicon rf power transistor Datasheet

HF20-12S
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HF20-12S is Designed for
12.5 V Class AB & C HF Power
Amplifier Applications in the 2 to 32
MHz Band.
PACKAGE STYLE .380 4L STUD
.112x45°
A
C
FEATURES:
B
E
E
• PG = 15 dB min. at 20 W/30 MHz
• IMD3 = -30 dBc max. at 20 W (PEP)
• Omnigold™ Metalization System
• Emitter Ballasting
ØC
B
D
H
J
G
#8-32 UNC-2A
F
MAXIMUM RATINGS
E
IC
4.5 A
VCBO
VCEO
VEBO
PDISS
I
MAXIMUM
DIM
MINIMUM
inches / mm
inches / mm
36 V
A
.220 / 5.59
.230 / 5.84
B
.980 / 24.89
18 V
C
.370 / 9.40
.385 / 9.78
D
.004 / 0.10
.007 / 0.18
4.0 V
E
.320 / 8.13
.330 / 8.38
F
.100 / 2.54
.130 / 3.30
G
.450 / 11.43
.490 / 12.45
H
.090 / 2.29
.100 / 2.54
I
.155 / 3.94
80 W @ TC = 25 °C
TJ
-65 °C to +200 °C
TSTG
-65 °C to +150 °C
θJC
2.2 °C/W
CHARACTERISTICS
ORDER CODE: ASI10595
TC = 25 °C
NONETEST CONDITIONS
SYMBOL
.175 / 4.45
.750 / 19.05
J
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 50 mA
36
V
BVCES
IC = 50 mA
36
V
BVCEO
IC = 50 mA
18
V
BVEBO
IE = 5.0 mA
4.0
V
ICES
VCE = 15 V
hFE
VCE = 5.0 V
Cob
VCB = 12.5 V
GP
IMD3
VCC = 12.5 V
POUT = 20 W (PEP)
IC = 1.0 A
10
f = 1.0 MHz
ICQ =25 mA
f = 30 MHz
5
mA
200
--pF
100
dB
15
-30
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
dBc
REV. B
1/1
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