IXKR 25N80C Advanced Technical Information CoolMOS™ 1) Power MOSFET ID25 = 25 A VDSS = 800 V RDS(on) = 125 mW in ISOPLUS247™ Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base ISOPLUS 247™ D G E153432 G D S S G = Gate, D = Drain, S = Source Features MOSFET Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90 TC = 25°C TC = 90°C dv/dt VDS < VDSS; IF < 17 A | diF /dt | < 100 A/µs TVJ = 150°C EAS EAR ID = 4 A; L = 80 mH; TC = 25°C ID = 17 A; L = 3.3 mH; TC = 25°C Symbol Conditions 800 V ± 20 V 25 18 A A 6 V/ns 0.67 0.5 mJ mJ Characteristic Values (TVJ = 25°C, unless otherwise specified) min. RDSon VGS = 10 V; ID = ID90 VGS(th) VDS = 20 V; ID = 2 mA IDSS VDS = VDSS; VGS = 0 V; TVJ = 25°C TVJ = 125°C IGSS VGS = ± 20 V; VDS = 0 V Qg Qgs Qgd VGS = 10 V; VDS = 640 V; ID = 34 A td(on) tr td(off) tf VGS = 10 V; VDS = 640 V ID = 34 A; RG = 2.2 Ω VF (reverse conduction) IF = 12.5 A; VGS = 0 V IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved - Electrical isolation towards the heatsink - Low coupling capacitance to the heatsink for reduced EMI - High power dissipation - High temperature cycling capability of chip on DCB - JEDEC TO-247AD compatible - Easy clip assembly • fast CoolMOS™ 1) power MOSFET 3rd generation - High blocking capability - Low on resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness • Enhanced total power density typ. max. 125 150 mW 4 V • Switched mode power supplies (SMPS) 50 µA µA 200 nA • Uninterruptible power supplies (UPS) • Power factor correction (PFC) • Welding • Inductive heating 355 nC nC nC 2 RthJC • ISOPLUS247™ package with DCB Base 100 180 24 92 25 15 72 6 1 Applications ns ns ns ns 1.3 V 0.5 K/W 1) CoolMOS™ is a trademark of Infineon Technologies AG. 20080526a -2 Advanced Technical Information IXKR 25N80C Component Symbol Conditions VISOL IISOL < 1 mA; 50/60 Hz Maximum Ratings TVJ Tstg TL 1.6 mm from case for 10 s FC mounting force with clip Symbol Conditions coupling capacity bewtween shorted pin and mounting tab in the case RthCH with heatsink compound -40...+150 -40...+125 °C °C 300 °C 20 ... 120 N typ. max. 30 pF 0.25 K/W 6 g Weight IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved V~ Characteristic Values min. CP 2500 20080526a -2