SemiHow HFW640 200v n-channel mosfet Datasheet

BVDSS = 200 V
RDS(on) typ = 0.145Ω
HFW640 / HFI640
ID = 18 A
200V N-Channel MOSFET
D2-PAK
I2-PAK
2
FEATURES
1
1
3
 Originative New Design
2
3
HFW640
 Superior Avalanche Rugged Technology
 Robust Gate Oxide Technology
HFI640
1.Gate 2. Drain 3. Source
 Very Low Intrinsic Capacitances
 Excellent Switching Characteristics
 Unrivalled Gate Charge : 37 nC (Typ.)
 Extended Safe Operating Area
 Lower RDS(ON) : 0.145 Ω (Typ.) @VGS=10V
 100% Avalanche Tested
Absolute Maximum Ratings
Symbol
TC=25℃ unless otherwise specified
Parameter
Value
Units
200
V
VDSS
Drain-Source Voltage
ID
Drain Current
– Continuous (TC = 25℃)
18
A
Drain Current
– Continuous (TC = 100℃)
11.4
A
IDM
Drain Current
– Pulsed
72
A
VGS
Gate-Source Voltage
±30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
250
mJ
IAR
Avalanche Current
(Note 1)
18
A
EAR
Repetitive Avalanche Energy
(Note 1)
13.9
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
5.5
V/ns
PD
Power Dissipation (TA = 25℃)
3.13
W
Power Dissipation (TC = 25℃)
- Derate above 25℃
139
W
1.11
W/℃
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
℃
TL
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
300
℃
(Note 1)
Thermal Resistance Characteristics
Typ.
Max.
RθJC
Symbol
Junction-to-Case
Parameter
--
0.9
Rθ JA
Junction-to-Ambient*
--
40
RθJA
Junction-to-Ambient
--
62.5
Units
℃/W
* When mounted on the minimum pad size recommended (PCB Mount)
◎ SEMIHOW REV.A0,Mar 2008
HFW640 / HFI640
Mar 2008
Symbol
Parameter
unless otherwise specified
Test Conditions
Min
Typ
Max
Units
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
VDS = VGS, ID = 250 ㎂
2.0
--
4.0
V
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 9.0 A
--
0.145
0.18
Ω
VGS = 0 V, ID = 250 ㎂
200
--
--
V
ID = 250 ㎂, Referenced to25℃
--
0.2
--
V/℃
VDS = 200 V, VGS = 0 V
--
--
1
㎂
VDS = 160 V, TC = 125℃
--
--
10
㎂
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS Breakdown Voltage Temperature
Coefficient
/ΔTJ
IDSS
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current,
Forward
VGS = 30 V, VDS = 0 V
--
--
100
㎁
IGSSR
Gate-Body Leakage Current,
Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
㎁
--
1300
1700
㎊
--
175
230
㎊
--
26
34
㎊
--
20
40
㎱
--
150
300
㎱
--
150
300
㎱
--
110
220
㎱
--
37
48
nC
--
5.5
--
nC
--
13
--
nC
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on)
Turn-On Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
VDS = 100 V, ID = 18 A,
RG = 25 Ω
(Note 4,5)
VDS = 160 V, ID = 18 A,
VGS = 10 V
(Note 4,5)
Gate-Drain Charge
Source-Drain Diode Maximum Ratings and Characteristics
IS
Continuous Source-Drain Diode Forward Current
--
--
18
ISM
Pulsed Source-Drain Diode Forward Current
--
--
72
VSD
Source-Drain Diode Forward Voltage
IS = 18 A, VGS = 0 V
--
--
1.5
V
trr
Reverse Recovery Time
--
200
--
㎱
Qrr
Reverse Recovery Charge
IS = 18 A, VGS = 0 V
diF/dt = 100 A/μs (Note 4)
--
1.50
--
μC
A
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=1.16mH, IAS=18A, VDD=50V, RG=25Ω, Starting TJ =25°C
3. ISD≤18A, di/dt≤300A/μs, VDD≤BVDSS , Starting TJ =25 °C
4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature
◎ SEMIHOW REV.A0,Mar 2008
HFW640 / HFI640
Electrical Characteristics TC=25 °C
HFW640 / HFI640
Typical Characteristics
VGS
15.0V
10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
Bottom: 5.0V
ID, Drain Current [A]
ID, Drain Current [A]
Top:
※ Notes
1. 250us Pulse Test
2. T c=25℃
※ Notes
1. VDS=40V
2. 250us Pulse Test
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
RDS(ON)[Ω],
Drain-Source On-Resistance
IDR, Reverse Drain Current [A]
Figure 2. Transfer Characteristics
※ Notes
1. VGS=0V
2. 250us Pulse Test
※ Notes : T J=25℃
ID, Drain Current [A]
VSD, Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
2500
Ciss
1500
Coss
1000
※ Note ;
1. VGS = 0 V
2. f = 1 MHz
500
Crss
VGS, Gate-Source Voltage [V]
2000
Capacitances [pF]
12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
VDS = 40V
VDS = 100V
10
VDS = 160V
8
6
4
2
* Note : ID = 18.0 A
0
-1
10
0
10
1
10
0
0
8
16
24
32
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
40
◎ SEMIHOW REV.A0,Mar 2008
(continued)
1.2
3.0
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
HFW640 / HFI640
Typical Characteristics
1.1
1.0
* Note :
1. VGS = 0 V
2. ID = 250 µA
0.9
0.8
-100
-50
0
50
100
150
2.5
2.0
1.5
1.0
∗ Note :
1. VGS = 10 V
2. ID = 1.0 A
0.5
0.0
-100
200
-50
0
10-1
200
16
ID, Drain Current [A]
100
* Notes :
1. TC = 25 oC
12
8
4
2. TJ = 150 oC
3. Single Pulse
10-2
100
101
0
25
102
50
75
100
125
150
TC, Case Temperature [ ℃]
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
0
10
D=0.5
Zθ JC(t), Thermal Response
ID, Drain Current [A]
100 µs
1 ms
10 ms
100 ms
DC
10
150
20
Operation in This Area
is Limited by R DS(on)
1
100
Figure 8. On-Resistance Variation
vs Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
102
50
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
0.2
※ Notes :
1. Zθ JC(t) = 0.9 ℃/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * Zθ JC(t)
-1
10
0.1
0.05
0.02
0.01
PDM
t1
single pulse
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
t2
0
10
1
10
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
◎ SEMIHOW REV.A0,Mar 2008
HFW640 / HFI640
Fig 12. Gate Charge Test Circuit & Waveform
50KΩ
12V
VGS
Same Type
as DUT
Qg
200nF
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
VDS
VDS
90%
VDD
RG
( 0.5 rated VDS )
Vin
DUT
10V
10%
tr
td(on)
td(off)
t on
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- LL IAS2 -------------------2
BVDSS -- VDD
L
VDS
VDD
ID
BVDSS
IAS
RG
10V
ID (t)
DUT
VDS (t)
VDD
tp
Time
◎ SEMIHOW REV.A0,Mar 2008
HFW640 / HFI640
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• IS controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
Vf
VDD
Body Diode
Forward Voltage Drop
◎ SEMIHOW REV.A0,Mar 2008
HFW640 / HFI640
Package Dimension
◎ SEMIHOW REV.A0,Mar 2008
HFW640 / HFI640
Package Dimension
◎ SEMIHOW REV.A0,Mar 2008
Similar pages