MITSUBISHI Nch POWER MOSFET ARY FS16UMA-5A MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P HIGH-SPEED SWITCHING USE FS16UMA-5A OUTLINE DRAWING Dimensions in mm 4.5 10.5MAX. 1.3 16 7.0 3.2 ➃ 1.0 3.8MAX. 0.8 2.54 2.54 ➀ ➁ ➂ 0.5 2.6 4.5MAX. 12.5MIN. φ 3.6 ➁➃ ● 10V DRIVE ● VDSS ............................................................................... 250V ● rDS (ON) (MAX) ............................................................. 0.25Ω ● ID ......................................................................................... 16A ➀ GATE ➁ DRAIN ➂ SOURCE ➃ DRAIN ➀ ➂ TO-220 APPLICATION CS Switch for CRT Display monitor MAXIMUM RATINGS Symbol (Tc = 25°C) Parameter VDSS VGSS ID Drain-source voltage Gate-source voltage Drain current IDM IDA PD Tch Tstg Drain current (Pulsed) Avalanche drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature — Weight Conditions VGS = 0V VDS = 0V L = 200µH Typical value Ratings Unit 250 ±20 16 V V A 48 16 80 –55 ~ +150 –55 ~ +150 A A W °C °C 2.0 g Sep.1998 MITSUBISHI Nch POWER MOSFET ARY FS16UMA-5A MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P ELECTRICAL CHARACTERISTICS HIGH-SPEED SWITCHING USE (Tch = 25°C) Symbol Parameter V (BR) DSS Drain-source breakdown voltage ID = 1mA, VGS = 0V IGSS IDSS Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time VDS = 25V, VGS = 0V, f = 1MHz VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Turn-off delay time Fall time Source-drain voltage Rth (ch-c) Thermal resistance Test conditions Limits Unit VGS = ±20V, VDS = 0V VDS = 250V, VGS = 0V Min. 250 — — Typ. — — — Max. — ±10 1 ID = 1mA, VDS = 10V ID = 8A, VGS = 10V ID = 8A, VGS = 10V ID = 8A, VDS = 10V 2.0 — — — 3.0 0.19 1.52 16.0 4.0 0.25 2.00 — V Ω V S — — — — 1850 180 50 30 — — — — pF pF pF ns — — — — 50 320 70 0.95 — — — — ns ns ns V — — 1.56 °C/W VDD = 150V, ID = 8A, VGS = 10V, RGEN = RGS = 50Ω IS = 8A, VGS = 0V Channel to case V µA mA Sep.1998