ASI BLF522 Uhf power mos transistor Datasheet

BLF522
UHF POWER MOS TRANSISTOR
DESCRIPTION:
PACKAGE STYLE .230 6L FLG
The ASI BLF522 is Designed for
communications transmitter
applications in the UHF frequency
range.
A
.040x45°
4X .025 R
B
C
2
4
1
3
6
2XØ.130
.115
.430 D
FEATURES:
E
• Designed for broadband operation.
• High power gain
• Omnigold™ Metalization System
5
F
.125
G
H
I
J K
L
MAXIMUM RATINGS
M AXIM UM
DIM
M INIM UM
inches / mm
inches / mm
A
.355 / 9.02
.365 / 9.27
B
.115 / 2.92
.125 / 3.18
C
.075 / 1.91
.085 / 2.16
50 V
D
.225 / 5.72
.235 / 5.97
E
.090 / 2.29
.110 / 2.79
1.6 A
F
.720 / 18.29
.730 / 18.54
G
.970 / 24.64
.980 / 24.89
PDISS
30 W @ TC = 25 °C
H
.355 / 9.02
.365 / 9.27
I
.004 / 0.10
.006 / 0.15
TJ
-65 °C to +200 °C
J
.120 / 3.05
.130 / 3.30
K
.160 / 4.06
.180 / 4.57
TSTG
-65 °C to +150 °C
L
.230 / 5.84
.260 / 6.60
θJC
6.0 °C/W
VDS
50 V
±VGS
30 V
VDG
ID
CHARACTERISTICS
1 & 2 Source 3 Gate 4 Drain 5 & 6 Source
TC = 25 °C
NONETEST CONDITIONS
SYMBOL
MINIMUM TYPICAL MAXIMUM
UNITS
V(BR)DSS
IDS = 20 mA
IDSS
VDS = 12.5 V
IGSS
VDS = 0 V
±VGS = 30 V
VGS
VGS = 40 V
IDS = 40 mA
gM
VDS = 10 V
VGS = 5.0 V
0.4
Mho
RDS(on)
VGS = 20 V
IDS = 3.2 A
1.2
Ω
IDsat
VDS = 10 V
VGS = 20 V
4.6
A
40
V
1.0
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
0.4
mA
1.0
µA
7.0
V
REV. B
1/2
BLF522
ERROR! REFERENCE SOURCE NOT
FOUND.
15
Ciss
Coss
VDS = 12.5 V
VGS = 0 V
16
f = 1.0 MHz
Crss
PG
ηD
pF
2.4
VDS = 12.5 V
IDQ = 5.0 W
f = 850 GHz
10
50
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
dB
%
REV. B
2/2
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