ER20 1 THRU ER20 6 HD ZC55 DO-1 5 Plastic-Encapsulate Diodes Super Fast Recovery Rectifier Diode Features ●Io 2A DO-1 5 ●VRRM 100V-600V ●High surge current capability ● Polarity: Color band denotes cathode Applications ● Rectifier Marking ● ER20X X:From 1 to 6 ER20 Symbol Unit Item I Item Peak Forward Voltage Peak Reverse Current Reverse Recovery time Thermal Resistance(Typical) V VRMS Maximum RMS Voltage 400 600 70 140 210 280 420 2.0 IFSM 60Hz Half-sine wave,1 cycle, Ta=25℃ 50 VFM V trr 300 60Hz Half-sine wave, Resistance load, Ta=50℃ Unit IRRM2 200 IF(AV) Symbol IRRM1 100 μA ns RθJ-A Test Condition IFM=2.0A ER20 1 2 0.95 4 1.25 Ta=25℃ 5 Ta=125℃ IF=0.5A IR=1A IRR=0.25A 50 VRM=VRRM 55 Between junction and lead 20 High Diode Semiconductor 6 1.7 35 Between junction and ambient ℃/W RθJ-L 3 1 Typical Characteristics FIG.2 : MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT IFSM(A) IO(A FIG.1: FORWARD CURRENT DERATING CURVE 2.0 50 40 1.5 8.3ms Single Half Sine Wave JEDEC Method 30 1.0 20 0.5 10 Single Phase Half Wave 60Hz Resistive or Inductive Load 0.375''(9.5mm) Lead Length 0 0 100 50 150 Ta(℃) 1 10 IR(uA) IF(A) ER201-ER202 ER203-ER204 6 8 10 20 100 FIG.4:TYPICAL REVERSE CHARACTERISTICS 1000 Tj=125℃ 100 ER206 4.0 4 Number of Cycles FIG.3: TYPICAL FORWARD CHARACTERISTICS 20 2 2.0 10 1.0 Tj=100℃ 0.4 1.0 0.2 0.1 Tj=25℃ TJ=25℃ Pulse width=300us 1% Duty Cycle 0.1 0.02 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.01 0 1.8 20 40 60 80 VF(V) 100 Voltage(%) FIG.5: Diagram of circuit and Testing wave form of reverse recovery time I D trr IF VR IF RL t 0 IRR IR High Diode Semiconductor 2 DIA .028(0.70) .102(2.60) DIA .035(0.90) 1.0(25.4) MIN .142(3.60) 1.0(25.4) MIN .300(7.60) .228(5.80) DO-1 5 Unit: in inches (millimeters) JSHD JSHD High Diode Semiconductor 3 Ammo Box Packaging Specifications For Axial Lead Rectifiers High Diode Semiconductor 4