AP3P9R0H
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
G
▼ RoHS Compliant & Halogen-Free
BVDSS
-30V
RDS(ON)
9mΩ
ID
-63A
S
Description
AP3P9R0 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and fast
switching performance. It provides the designer with an extreme efficient
device for use in a wide range of power applications.
G D
S
TO-252(H)
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and suited for
high current application due to the low connection resistance.
Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified)
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
-30
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Drain Current, VGS @ 10V
-63
A
ID@TC=100℃
Drain Current, VGS @ 10V
-40
A
-240
A
54.3
W
45
mJ
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
4
EAS
Single Pulse Avalanche Energy
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance Junction-case
3
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Value
Units
2.3
℃/W
62.5
℃/W
1
201709151
AP3P9R0H
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
-30
-
-
V
RDS(ON)
Static Drain-Source On-Resistance2
VGS=-10V, ID=-40A
-
-
9
mΩ
VGS=-4.5V, ID=-30A
-
-
15
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-30A
-
60
-
S
IDSS
Drain-Source Leakage Current
VDS=-24V, VGS=0V
-
-
-10
uA
IGSS
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
ID=-30A
-
44
70.4
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-24V
-
9
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
24
-
nC
VDS=-15V
-
11
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-30A
-
60
-
ns
td(off)
Turn-off Delay Time
RG=1Ω
-
40
-
ns
tf
Fall Time
VGS=-10V
-
17
-
ns
Ciss
Input Capacitance
VGS=0V
-
3550 5680
pF
Coss
Output Capacitance
VDS=-25V
-
500
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
400
-
pF
Rg
Gate Resistance
f=1.0MHz
-
2
-
Ω
Min.
Typ.
.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=-30A, VGS=0V
-
-
-1.2
V
trr
Reverse Recovery Time
IS=-10A, VGS=0V,
-
34
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
17
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
4.Starting Tj=25oC , VDD=-30V , L=0.1mH , RG=25Ω, VGS=-10V
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP3P9R0H
240
160
T C = 25 o C
-ID , Drain Current (A)
200
-ID , Drain Current (A)
T C = 150 o C
-10V
-7.0 V
-6.0 V
-5.0 V
160
V G = - 4.0 V
120
80
120
-10V
-7.0V
-6.0V
-5.0V
V G = - 4.0 V
80
40
40
0
0
0
4
8
12
16
20
0
2
4
6
8
10
12
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
14
2.0
I D = -40A
V G = -10V
I D = -30 A
T C =25 ℃
1.6
10
.
Normalized RDS(ON)
RDS(ON) (mΩ )
12
1.2
0.8
8
0.4
0.0
6
2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
40
1.6
1.4
T j =150 o C
Normalized VGS(th)
-IS(A)
30
T j =25 o C
20
1.2
1
0.8
10
0.6
0.4
0
0
0.4
0.8
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.6
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP3P9R0H
10
f=1.0MHz
5000
4000
8
C iss
C (pF)
-VGS , Gate to Source Voltage (V)
V DS = -24V
I D = -30A
6
4
2000
2
1000
C oss
C rss
0
0
0
20
40
60
1
80
5
9
13
17
21
25
29
Q G , Total Gate Charge (nC)
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
Operation in this area
limited by RDS(ON)
100us
10
.
1ms
10ms
100ms
DC
1
o
T C =25 C
Single Pulse
0.1
Normalized Thermal Response (Rthjc)
1
100
-ID (A)
3000
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
10
-V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off)tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
AP3P9R0H
MARKING INFORMATION
Part Number
3P9R0
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
5