BZT55-Series Vishay Semiconductors Small Signal Zener Diodes Features • • • • • • • Very sharp reverse characteristic Low reverse current level e2 Available with tighter tolerances Very high stability Low noise Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 9612009 Applications • Voltage stabilization Mechanical Data Case: QuadroMELF Glass case SOD80 Weight: approx. 34 mg Packaging Codes/Options: GS08 / 2.5 k per 7" reel 12.5 k/box GS18 / 10 k per 13" reel 10 k/box Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Power dissipation Test condition Symbol Value Unit PV 500 mW IZ PV/VZ mA RthJA ≤ 300 K/W Z-current Junction temperature Tj 175 °C Tstg - 65 to + 175 °C Symbol Value Unit RthJA 500 K/W Storage temperature range Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Junction to ambient air Test condition on PC board 50 mm x 50 mm x 1.6 mm Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Forward voltage Document Number 85637 Rev. 1.5, 10-Mar-06 Test condition IF = 200 mA Symbol VF Min Typ. Max Unit 1.5 V www.vishay.com 1 BZT55-Series Vishay Semiconductors Electrical Characteristics BZT55C.. Partnumber Zener Voltage1) Dynamic Resistance Test Current Temperature Coefficient Test Current VZ at IZT rzj at IZT, f = 1 kHz IZT TKVZ IZK V Ω mA %/K min IR at Tamb = 25°C mA IR at Tamb = 150 °C µA at VR V min max max BZT55C2V4 2.28 2.56 < 85 < 600 5 - 0.09 - 0.06 1 < 50 < 100 BZT55C2V7 2.5 2.9 < 85 < 600 5 - 0.09 - 0.06 1 < 10 < 50 1 BZT55C3V0 2.8 3.2 < 90 < 600 5 - 0.08 - 0.05 1 <4 < 40 1 BZT55C3V3 3.1 3.5 < 90 < 600 5 - 0.08 - 0.05 1 <2 < 40 1 BZT55C3V6 3.4 3.8 < 90 < 600 5 - 0.08 - 0.05 1 <2 < 40 1 BZT55C3V9 3.7 4.1 < 90 < 600 5 - 0.08 - 0.05 1 <2 < 40 1 BZT55C4V3 4 4.6 < 90 < 600 5 - 0.06 - 0.03 1 <1 < 20 1 BZT55C4V7 4.4 5 < 80 < 600 5 - 0.05 0.02 1 < 0.5 < 10 1 BZT55C5V1 4.8 5.4 < 60 < 550 5 - 0.02 0.02 1 < 0.1 <2 1 BZT55C5V6 5.2 6 < 40 < 450 5 - 0.05 0.05 1 < 0.1 <2 1 BZT55C6V2 5.8 6.6 < 10 < 200 5 0.03 0.06 1 < 0.1 <2 2 BZT55C6V8 6.4 7.2 <8 < 150 5 0.03 0.07 1 < 0.1 <2 3 BZT55C7V5 7 7.9 <7 < 50 5 0.03 0.07 1 < 0.1 <2 5 BZT55C8V2 7.7 8.7 <7 < 50 5 0.03 0.08 1 < 0.1 <2 6.2 BZT55C9V1 * 8.5 9.6 < 10 < 50 5 0.03 0.09 1 < 0.1 <2 6.8 BZT55C10 * 9.4 10.6 < 15 < 70 5 0.03 0.1 1 < 0.1 <2 7.5 BZT55C11 * 10.4 11.6 < 20 < 70 5 0.03 0.11 1 < 0.1 <2 8.2 BZT55C12 * 11.4 12.7 < 20 < 90 5 0.03 0.11 1 < 0.1 <2 9.1 BZT55C13 * 12.4 14.1 < 26 < 110 5 0.03 0.11 1 < 0.1 <2 10 BZT55C15 * 13.8 15.6 < 30 < 110 5 0.03 0.11 1 < 0.1 <2 11 BZT55C16 * 15.3 17.1 < 40 < 170 5 0.03 0.11 1 < 0.1 <2 12 BZT55C18 * 16.8 19.1 < 50 < 170 5 0.03 0.11 1 < 0.1 <2 13 BZT55C20 * 18.8 21.2 < 55 < 220 5 0.03 0.11 1 < 0.1 <2 15 BZT55C22 * 20.8 23.3 < 55 < 220 5 0.04 0.12 1 < 0.1 <2 16 BZT55C24 * 22.8 25.6 < 80 < 220 5 0.04 0.12 1 < 0.1 <2 18 BZT55C27 * 25.1 28.9 < 80 < 220 5 0.04 0.12 1 < 0.1 <2 20 BZT55C30 * 28 32 < 80 < 220 5 0.04 0.12 1 < 0.1 <2 22 BZT55C33 * 31 35 < 80 < 220 5 0.04 0.12 1 < 0.1 <2 24 BZT55C36 * 34 38 < 80 < 220 5 0.04 0.12 1 < 0.1 <2 27 BZT55C39 * 37 41 < 90 < 500 2.5 0.04 0.12 0.5 < 0.1 <5 30 BZT55C43 * 40 46 < 90 < 600 2.5 0.04 0.12 0.5 < 0.1 <5 33 BZT55C47 * 44 50 < 110 < 700 2.5 0.04 0.12 0.5 < 0.1 <5 36 BZT55C51 * 48 54 < 125 < 700 2.5 0.04 0.12 0.5 < 0.1 < 10 39 BZT55C56 * 52 60 < 135 < 1000 2.5 0.04 0.12 0.5 < 0.1 < 10 43 BZT55C62 * 58 66 < 150 < 1000 2.5 0.04 0.12 0.5 < 0.1 < 10 47 BZT55C68 * 64 72 < 200 < 1000 2.5 0.04 0.12 0.5 < 0.1 < 10 51 BZT55C75 * 70 79 < 250 < 1500 2.5 0.04 0.12 0.5 < 0.1 < 10 56 1) tp ≤ 10 ms, T/tp > 1000 *) Additionnal measurement of Voltage group 9V1 to 75 at 95 % Vzmin ≤ 35 nA at Tj 25 °C www.vishay.com 2 Reverse Leakage Current 1 Document Number 85637 Rev. 1.5, 10-Mar-06 BZT55-Series Vishay Semiconductors Electrical Characteristics BZT55B.. Partnumber Zener Voltage1) Dynamic Resistance Test Current Temperature Coefficient of Zener Voltage Test Current VZ at IZT rzj at IZT, f = 1 kHz IZT TKVZ IZK IR at Tamb = 25°C V Ω mA mA µA min max BZT55B2V4 2.35 2.45 < 85 < 600 BZT55B2V7 2.64 2.76 < 85 < 600 BZT55B3V0 2.94 3.06 < 90 BZT55B3V3 3.24 3.36 < 90 BZT55B3V6 3.52 3.68 BZT55B3V9 3.82 BZT55B4V3 BZT55B4V7 %/K Reverse Leakage Current IR at Tamb = 150 °C at VR V min max 5 - 0.09 - 0.06 1 < 50 < 100 1 5 - 0.09 - 0.06 1 < 10 < 50 1 < 600 5 - 0.08 - 0.05 1 <4 < 40 1 < 600 5 - 0.08 - 0.05 1 <2 < 40 1 < 90 < 600 5 - 0.08 - 0.05 1 <2 < 40 1 3.98 < 90 < 600 5 - 0.08 - 0.05 1 <2 < 40 1 4.22 4.38 < 90 < 600 5 - 0.06 - 0.03 1 <1 < 20 1 4.6 4.8 < 80 < 600 5 - 0.05 0.02 1 < 0.5 < 10 1 1 BZT55B5V1 5 5.2 < 60 < 550 5 - 0.02 0.02 1 < 0.1 <2 BZT55B5V6 5.48 5.72 < 40 < 450 5 - 0.05 0.05 1 < 0.1 <2 1 BZT55B6V2 6.08 6.32 < 10 < 200 5 0.03 0.06 1 < 0.1 <2 2 BZT55B6V8 6.66 6.94 <8 < 150 5 0.03 0.07 1 < 0.1 <2 3 BZT55B7V5 7.35 7.65 <7 < 50 5 0.03 0.07 1 < 0.1 <2 5 6.2 BZT55B8V2 8.04 8.36 <7 < 50 5 0.03 0.08 1 < 0.1 <2 BZT55B9V1 * 8.92 9.28 < 10 < 50 5 0.03 0.09 1 < 0.1 <2 6.8 BZT55B10 * 9.8 10.2 < 15 < 70 5 0.03 0.1 1 < 0.1 <2 7.5 BZT55B11 * 10.78 11.22 < 20 < 70 5 0.03 0.11 1 < 0.1 <2 8.2 BZT55B12 * 11.76 12.24 < 20 < 90 5 0.03 0.11 1 < 0.1 <2 9.1 BZT55B13 * 12.74 13.26 < 26 < 110 5 0.03 0.11 1 < 0.1 <2 10 BZT55B15 * 14.7 15.3 < 30 < 110 5 0.03 0.11 1 < 0.1 <2 11 BZT55B16 * 15.7 16.3 < 40 < 170 5 0.03 0.11 1 < 0.1 <2 12 BZT55B18 * 17.64 18.36 < 50 < 170 5 0.03 0.11 1 < 0.1 <2 13 BZT55B20 * 19.6 20.4 < 55 < 220 5 0.03 0.11 1 < 0.1 <2 15 BZT55B22 * 21.55 22.45 < 55 < 220 5 0.04 0.12 1 < 0.1 <2 16 BZT55B24 * 23.5 24.5 < 80 < 220 5 0.04 0.12 1 < 0.1 <2 18 BZT55B27 * 26.4 27.6 < 80 < 220 5 0.04 0.12 1 < 0.1 <2 20 BZT55B30 * 29.4 30.6 < 80 < 220 5 0.04 0.12 1 < 0.1 <2 22 BZT55B33 * 32.4 33.6 < 80 < 220 5 0.04 0.12 1 < 0.1 <2 24 BZT55B36 * 35.3 36.7 < 80 < 220 5 0.04 0.12 1 < 0.1 <2 27 BZT55B39 * 38.2 39.8 < 90 < 500 2.5 0.04 0.12 1 < 0.1 <5 30 BZT55B43 * 42.1 43.9 < 90 < 600 2.5 0.04 0.12 0.5 < 0.1 <5 33 BZT55B47 * 46.1 47.9 < 110 < 700 2.5 0.04 0.12 0.5 < 0.1 <5 36 BZT55B51 * 50 52 < 125 < 700 2.5 0.04 0.12 0.5 < 0.1 < 10 39 BZT55B56 * 54.9 57.1 < 135 < 1000 2.5 0.04 0.12 0.5 < 0.1 < 10 43 BZT55B62 * 60.8 63.2 < 150 < 1000 2.5 0.04 0.12 0.5 < 0.1 < 10 47 BZT55B68 * 66.6 69.4 < 200 < 1000 2.5 0.04 0.12 0.5 < 0.1 < 10 51 BZT55B75 * 73.5 76.5 < 250 < 1500 2.5 0.04 0.12 0.5 < 0.1 < 10 56 1) tp ≤ 10 ms, T/tp > 1000 *) Additionnal measurement of Voltage group 9V1 to 75 at 95 % Vzmin ≤ 35 nA at Tj 25 °C Document Number 85637 Rev. 1.5, 10-Mar-06 www.vishay.com 3 BZT55-Series Vishay Semiconductors Typical Characteristics 600 500 400 300 200 100 0 0 40 80 120 160 200 Tamb - Ambient Temperature (°C) 95 9602 TKVZ - Temperature Coefficient of VZ (10-4/K) Ptot - Total Power Dissipation (mW) Tamb = 25 °C, unless otherwise specified 15 10 5 IZ = 5 mA 0 -5 0 Figure 1. Total Power Dissipation vs. Ambient Temperature 200 CD - Diode Capacitance (pF) VZ - Voltage Change (mV) Tj = 25 °C 100 IZ = 5 mA 10 0 5 10 15 VR = 2 V Tj = 25 °C 100 50 0 25 20 VZ - Z-Voltage (V) 95 9598 15 25 20 100 1.2 TKVZ = 10 x 10-4/K -4 8 x 10 /K 6 x 10-4/K 1.1 4 x 10-4/K 2 x 10-4/K 1.0 0 - 2 x 10-4/K - 4 x 10-4/K 0.9 IF - Forward Current (mA) VZtn = VZt/VZ (25 °C) 95 9599 10 VZ - Z-Voltage (V) Figure 5. Diode Capacitance vs. Z-Voltage 1.3 0.8 - 60 5 95 9601 Figure 2. Typical Change of Working Voltage under Operating Conditions at Tamb=25°C VZtn - Relative Voltage Change 150 0 1 10 Tj = 25 °C 1 0.1 0.01 0.001 0 60 120 180 0 240 Tj - Junction Temperature (°C) Figure 3. Typical Change of Working Voltage vs. Junction Temperature 4 50 20 40 30 VZ - Z-Voltage (V) Figure 4. Temperature Coefficient of Vz vs. Z-Voltage 1000 www.vishay.com 10 95 9600 95 9605 0.2 0.4 0.6 0.8 1.0 VF - Forward Voltage (V) Figure 6. Forward Current vs. Forward Voltage Document Number 85637 Rev. 1.5, 10-Mar-06 BZT55-Series Vishay Semiconductors rZ - Differential Z-Resistance (Ω) 100 IZ - Z-Current (mA) 80 Ptot = 500 mW Tamb = 25 °C 60 40 20 0 0 4 6 12 8 IZ = 1 mA 100 5 mA 10 10 mA Tj = 25 °C 1 0 20 VZ - Z-Voltage (V) 95 9604 1000 5 95 9606 10 15 20 25 VZ - Z-Voltage (V) Figure 9. Differential Z-Resistance vs. Z-Voltage Figure 7. Z-Current vs. Z-Voltage IZ - Z-Current (mA) 50 Ptot = 500 mW Tamb = 25 °C 40 30 20 10 0 15 20 25 95 9607 35 30 VZ - Z-Voltage (V) Zthp - Thermal Resistance for Pulse Cond. (KW) Figure 8. Z-Current vs. Z-Voltage 1000 tP/T = 0.5 100 tP/T = 0.2 Single Pulse 10 RthJA = 300 K/W T = Tjmax - Tamb tP/T = 0.01 tP/T = 0.1 tP/T = 0.02 tP/T = 0.05 1 10-1 95 9603 iZM = (- VZ + (VZ2 + 4rzj x T/Zthp) 1/2)/(2rzj) 100 101 102 tP - Pulse Length (ms) Figure 10. Thermal Response Document Number 85637 Rev. 1.5, 10-Mar-06 www.vishay.com 5 BZT55-Series Vishay Semiconductors Package Dimensions in mm (Inches) 12071 www.vishay.com 6 Document Number 85637 Rev. 1.5, 10-Mar-06 BZT55-Series Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 85637 Rev. 1.5, 10-Mar-06 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1