DMS2085LSD P-CHANNEL ENHANCEMENT MODE MOSFET WITH INTEGRATED SCHOTTKY DIODE ADVANCE INFORMATION NEW PRODUCT Product Summary Features and Benefits MOSFET RDS(on) max 85mΩ @ VGS = -10V 125mΩ @ VGS = -4.5V SCHOTTKY DIODE VF max 400mV @ IF = 0.5A 470mV @ IF = 1.0A V(BR)DSS -20V VR 20V ID -3.3A -2.8A IO 1.0A • • Low Input Capacitance MOSFET with Low RDS(ON) – Minimize Conduction Losses • Schottky Diode with Low Forward Voltage Drop • Fast Switching Speed • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Description • This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching • applications. Applications DC-DC Converters • Power Management Functions • Backlighting Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 performance, making it ideal for high efficiency power management • Case: SO-8 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminal Connections: See Diagram • Terminals: Finish – Matte Tin annealed over Copper leadframe Solderable per MIL-STD-202, Method 208 e3 • Weight: 0.074 grams (approximate) D A K A K S D G D G Top View Internal Schematic Top View A S K Q1 P-Channel MOSFET D1 Schottky Diode Ordering Information (Note 4) Part Number DMS2085LSD-13 Notes: Case SO-8 Packaging 2,500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 8 5 8 5 S2085LD S2085LD YY WW YY WW 1 4 Chengdu A/T Site DMS2085LSD Document number: DS36926 Rev. 2 - 2 1 = Manufacturer’s Marking S2085LD = Product Type Marking Code YYWW = Date Code Marking YY or YY = Year (ex: 13 = 2013) WW = Week (01 - 53) YY = Date Code Marking for SAT (Shanghai Assembly/ Test site) YY = Date Code Marking for CAT (Chengdu Assembly/ Test site) 4 Shanghai A/T Site 1 of 7 www.diodes.com August 2014 © Diodes Incorporated DMS2085LSD Maximum Ratings – P-CHANNEL MOSFET – Q1 (@TA = +25°C, unless otherwise specified.) Characteristic ADVANCE INFORMATION NEW PRODUCT Symbol Value Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 6) VGS = 10V Units Steady State TA = +25°C TA = +70°C ID -3.3 -2.7 A t<10s TA = +25°C TA = +70°C ID -4.3 -3.4 A A Maximum Body Diode Forward Current (Note 6) IS -1.5 Pulsed Drain Current (10µs pulse, duty cycle = 1%) IDM -11.2 A Avalanche Current (Notes 7) L = 5mH IAR -5 A Avalanche Energy (Notes 7) L = 5mH EAR 50 mJ Maximum Ratings – SCHOTTKY – D1 (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit VRRM VRWM VR 20 V Average Rectified Output Current (Note 7, t<10s) IO 1 A Peak Repetitive Forward Current (Note 7, t<10s) IFRM 2 A Non-Repetitive Peak Forward Surge Current (Note 7, t<10s) Single half sine-wave superimposed on rated load IFSM 20 A Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Symbol TA = +25°C TA = +70°C Steady state t<10s TA = +25°C TA = +70°C Steady state t<10s Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range DMS2085LSD Document number: DS36926 Rev. 2 - 2 2 of 7 www.diodes.com PD RθJA PD Value 1.1 1.8 108 65 1.8 2.3 RθJA 78 50 RθJC 22 TJ, TSTG -55 to +150 Units W °C/W W °C/W °C August 2014 © Diodes Incorporated DMS2085LSD Electrical Characteristics P-Channel Q1 (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Source Leakage Unit Test Condition -20 ⎯ ⎯ V VGS = 0V, ID = -250µA ⎯ ⎯ -1 µA VDS = -20V, VGS = 0V IGSS ⎯ ⎯ ±100 nA VGS = ±20V, VDS = 0V Gate Threshold Voltage VGS(th) -0.5 -1.5 -2.2 V VDS = VGS, ID = -250µA Static Drain-Source On-Resistance RDS(ON) ON CHARACTERISTICS (Note 8) ⎯ 70 85 ⎯ 100 125 VSD ⎯ -0.8 -1.0 Input Capacitance Ciss ⎯ 353 ⎯ Output Capacitance Coss ⎯ 49 ⎯ Reverse Transfer Capacitance Crss ⎯ 41 ⎯ Gate Resistance RG ⎯ 6.2 ⎯ Total Gate Charge (VGS = -4.5V) Qg ⎯ 3.7 ⎯ Diode Forward Voltage mΩ V VGS = -10V, ID = -3.05A VGS = -4.5V, ID = -1.50A VGS = 0V, IS = -1.0A DYNAMIC CHARACTERISTICS (Note 9) Total Gate Charge (VGS = -10V) Qg ⎯ 7.8 ⎯ Gate-Source Charge Qgs ⎯ 1.1 ⎯ pF VDS = -15V, VGS = 0V f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1.0MHz nC VDS = -15V, ID = -3A Gate-Drain Charge Qgd ⎯ 1.3 ⎯ Turn-On Delay Time tD(on) ⎯ 3.3 ⎯ Turn-On Rise Time tr ⎯ 3.0 ⎯ Turn-Off Delay Time tD(off) ⎯ 14 ⎯ tf ⎯ 6.8 ⎯ Body Diode Reverse Recovery Time trr ⎯ 33 ⎯ nS IS = -3.05A, dI/dt = 100A/μs Body Diode Reverse Recovery Charge Qrr ⎯ 46 ⎯ nC IS = -3.05A, dI/dt = 100A/μs Turn-Off Fall Time Notes: nS VDS = -15V,RL = 15Ω VGS = -10V, RG = 6Ω 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 15.0 10 VGS = -4.0V VGS = -10V VGS = -3.5V 8 ID, DRAIN CURRENT (A) 12.0 VGS = -3.0V 9.0 6.0 VGS = -2.5V 3.0 VGS = -1.8V 0.0 VDS = -5.0V 9 VGS = -4.5V ID, DRAIN CURRENT (A) ADVANCE INFORMATION NEW PRODUCT OFF CHARACTERISTICS (Note 8) 0 DMS2085LSD Document number: DS36926 Rev. 2 - 2 6 5 4 3 2 VGS = -2.0V 0.5 1 1.5 2 2.5 VDS, DRAIN -SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 7 TA = 150°C 1 3 3 of 7 www.diodes.com 0 TA = 125°C 0 0.5 TA = 85°C T A = 25°C T A = -55°C 1 1.5 2 2.5 3 3.5 4 4.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 5 August 2014 © Diodes Incorporated 0.12 VGS = -4.5V 0.09 0.06 VGS = -10V 0.03 0 3 6 9 12 ID, DRAIN SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage VGS = -4.5V 0.18 0.16 T A = 150 °C TA = 125°C 0.14 0.12 T A = 85°C 0.1 T A = 25°C 0.08 T A = -55°C 0.06 0.04 0.02 0 15 1.6 0 1 2 3 4 5 6 7 8 9 ID, DRAIN SOURCE CURRENT (A) Figure 4 Typical On-Resistance vs. Drain Current and Temperature 10 0.15 VGS = -4.5V ID = -5A VGS = -10V ID = -5A 1.2 0.8 0.4 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 5 On-Resistance Variation with Temperature RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 0.2 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.15 0 0.12 0.03 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6 On-Resistance Variation with Temperature 10 1.8 9 1.6 8 -ID = 1mA 1.2 1 -ID = 250µA 0.8 0.6 0.4 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 7 Gate Threshold Variation vs. Ambient Temperature DMS2085LSD Document number: DS36926 Rev. 2 - 2 7 6 5 T A= 150 °C 4 TA= 125°C 3 2 TA= 85°C 4 of 7 www.diodes.com 0 T A= 25°C T A= -55°C 1 0.2 VGS = -10V ID = -5A 0.06 2 1.4 VGS = -4.5V ID = -5A 0.09 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) ADVANCE INFORMATION NEW PRODUCT DMS2085LSD 0 1.2 1.5 0.3 0.6 0.9 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 8 Diode Forward Voltage vs. Current August 2014 © Diodes Incorporated DMS2085LSD VGS, GATE-SOURCE VOLTAGE (V) CT, JUNCTION CAPACITANCE (pF) 10 Ciss 100 Coss C rss 8 6 VDS = -15V ID = -3A 4 2 f = 1MHz 10 0 100 ID, DRAIN CURRENT (A) ADVANCE INFORMATION NEW PRODUCT 1000 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9 ypical Junction Capacitance 30 0 0 1 2 3 4 5 6 7 Qg, TOTAL GATE CHARGE (nC) Figure 10 Gate-Charge Characteristics 8 RDS(on) Limited 10 DC 1 PW = 10s PW = 1s PW = 100ms PW = 10ms 0.1 TJ(max) = 150°C TA = 25°C VGS = 4.5V Single Pulse DUT on 1 * MRP Board 0.01 0.1 PW = 1ms PW = 100µs 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 11 SOA, Safe Operation Area DMS2085LSD Document number: DS36926 Rev. 2 - 2 100 5 of 7 www.diodes.com August 2014 © Diodes Incorporated DMS2085LSD Electrical Characteristics – SCHOTTKY – D1 (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ V(BR)R 20 Forward Voltage (Note 8) VF ⎯ ⎯ Reverse Current (Note 8) IR ⎯ Unit Test Condition 35 ⎯ V IR = 1mA ⎯ ⎯ 0.40 0.47 V IF = 0.5A IF = 1.0A 30 80 μA VR = 20V 8. Short duration pulse test used to minimize self-heating effect. 10 1 IR, INSTANTANEOUS REVERSE CURRENT (µA) Notes: IF, INSTANTANEOUS FORWARD CURRENT (A) T A = 150°C TA = 125°C 0.1 TA = 85°C TA = 25°C T A = -55°C 0.01 0 100000 0.1 0.2 0.3 0.4 0.5 0.6 0.7 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 12 Typical Forward Characteristics TA = 150°C 10000 TA = 125°C TA = 85°C 1000 TA = 25°C 100 TA = -55°C 10 1 0 2 4 6 8 10 12 14 16 18 20 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Figure 13 Typical Reverse Characteristics Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. 0.254 ADVANCE INFORMATION NEW PRODUCT Reverse Breakdown Voltage (Note 8) Max E1 E A1 L Gauge Plane Seating Plane Detail ‘A’ h A2 A A3 7°~9° 45° Detail ‘A’ b e D DMS2085LSD Document number: DS36926 Rev. 2 - 2 6 of 7 www.diodes.com SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0° 8° θ All Dimensions in mm August 2014 © Diodes Incorporated DMS2085LSD Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. ADVANCE INFORMATION NEW PRODUCT X Dimensions X Y C1 C2 C1 Value (in mm) 0.60 1.55 5.4 1.27 C2 Y IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2014, Diodes Incorporated www.diodes.com DMS2085LSD Document number: DS36926 Rev. 2 - 2 7 of 7 www.diodes.com August 2014 © Diodes Incorporated