NTA4151P, NTE4151P Small Signal MOSFET −20 V, −760 mA, Single P−Channel, Gate Zener, SC−75, SC−89 Features • • • • • http://onsemi.com Low RDS(on) for Higher Efficiency and Longer Battery Life Small Outline Package (1.6 x 1.6 mm) SC−75 Standard Gullwing Package ESD Protected Gate Pb−Free Packages are Available V(BR)DSS RDS(on) TYP ID MAX 0.26 W @ −4.5 V 0.35 W @ −2.5 V −20 V −760 mA 0.49 W @ −1.8 V Applications • • • • High Side Load Switch DC−DC Conversion Small Drive Circuits Battery Operated Systems such as Cell Phones, PDAs, Digital Cameras, etc. P−Channel MOSFET D MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Units Drain−to−Source Voltage VDSS −20 V Gate−to−Source Voltage VGS ±6.0 V ID −760 mA Continuous Drain Current (Note 1) Power Dissipation (Note 1) SC−75 SC−89 Steady State PD mW 301 313 Steady State IDM ±1000 mA TJ, TSTG −55 to 150 °C Continuous Source Current (Body Diode) IS −250 mA Lead Temperature for Soldering Purposes (1/8 in from case for 10 s) TL 260 °C ESD 1800 V Pulsed Drain Current tp =10 ms Operating Junction and Storage Temperature Gate−to−Source ESD Rating − (Human Body Model, Method 3015) S MARKING DIAGRAM & PIN ASSIGNMENT 3 2 1 SC−75 / SOT−416 CASE 463 STYLE 5 3 Drain xx M G G 3 2 1 1 Gate 2 Source SC−89 CASE 463C THERMAL RESISTANCE RATINGS Junction−to−Ambient − Steady State (Note 1) SC−75 SC−89 G °C/W RqJA 415 400 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). xx M G = Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2006 September, 2006 − Rev. 5 1 Publication Order Number: NTA4151P/D NTA4151P, NTE4151P ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) Parameter Symbol Test Condition Min Typ Max Unit V(BR)DSS VGS = 0 V, ID = −250 mA −20 Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = −16 V −1.0 −100 nA Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±4.5 V $1.0 $10 mA W OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V ON CHARACTERISTICS (Note 2) Gate Threshold Voltage VGS(TH) VDS = VGS, ID = −250 mA Drain−to−Source On Resistance RDS(on) VGS = −4.5 V, ID = −350 mA 0.26 0.36 VGS = −2.5 V, ID = −300 mA 0.35 0.45 VGS = −1.8 V, ID = −150 mA 0.49 1.0 gFS VDS = −10 V, ID = −250 mA 0.4 S VGS = 0 V, f = 1.0 MHz, VDS = −5.0 V 156 pF Forward Transconductance −0.45 V CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 28 18 VGS = −4.5 V, VDD = −10 V, ID = −0.3 A Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS 0.325 Gate−to−Drain Charge QGD 0.5 nC 2.1 0.125 SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time td(ON) Rise Time tr Turn−Off Delay Time VGS = −4.5 V, VDD = −10 V, ID = −200 mA, RG = 10 W 8.2 td(OFF) 29 tf 20.4 Fall Time ns 8.0 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = −250 mA −0.72 −1.1 V 2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Marking Package Shipping † NTA4151PT1 TN SC−75 3000/Tape & Reel NTA4151PT1G TN SC−75 (Pb−Free) 3000/Tape & Reel NTE4151PT1G TM SC−89 (Pb−Free) 3000/Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 NTA4151P, NTE4151P TYPICAL ELECTRICAL CHARACTERISTICS 0.6 0.7 VDS w −10 V 0.6 −ID, DRAIN CURRENT (AMPS) −ID, DRAIN CURRENT (AMPS) TJ = 25°C −1.5 V 0.5 VGS = −1.75 V to −4.5 V 0.4 −1.25 V 0.3 0.2 0.1 −1.0 V 0.5 0.4 0.3 0.2 TJ = 25°C TJ = 125°C 0.1 TJ = −55°C 0 0.5 1.0 1.5 2.0 2.5 0 3.0 0.4 1.6 Figure 2. Transfer Characteristics 0.5 0.4 TJ = 125°C 0.3 TJ = 25°C TJ = −55°C 0.2 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 2.0 0.6 VGS = −2.5 V 0.5 TJ = 125°C 0.4 TJ = 25°C 0.3 TJ = −55°C 0.2 0.1 0 0 0.1 0.2 −ID, DRAIN CURRENT (AMPS) 0.3 0.4 0.5 0.6 0.7 −ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance vs. Drain Current and Temperature Figure 4. On−Resistance vs. Drain Current and Temperature 1.6 250 ID = − 0.35 A VGS = −4.5 V TJ = 25°C C, CAPACITANCE (pF) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 1.2 Figure 1. On−Region Characteristics VGS = −4.5 V 1.4 0.8 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 0.6 0 0 0 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 1.2 1.0 0.8 0.6 −50 200 CISS 150 100 COSS 50 −25 0 25 50 75 100 125 150 0 CRSS 0 TJ, JUNCTION TEMPERATURE (°C) 4 8 12 16 DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Capacitance Variation http://onsemi.com 3 20 NTA4151P, NTE4151P 0.7 5 QT −IS, SOURCE CURRENT (AMPS) −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS 4 3 QGS 2 QGD VDS = −10 V ID = −0.3 A TA = 25°C 1 0 0 0.4 2.0 0.8 1.2 1.6 QG, TOTAL GATE CHARGE (nC) VGS = 0 V 0.6 0.5 0.4 0.3 0.1 TJ = 25°C 0 2.4 r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE 0.1 0 0.2 0.4 0.6 0.8 1.0 −VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 8. Diode Forward Voltage vs. Current Figure 7. Gate−to−Source Voltage vs. Total Gate Charge 1.0 TJ = 125°C 0.2 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 t, TIME (s) 1.0 Figure 9. Normalized Thermal Response http://onsemi.com 4 10 100 1000 NTA4151P, NTE4151P PACKAGE DIMENSIONS SC−75/SOT−416 CASE 463−01 ISSUE F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. −E− 2 3 b 3 PL 0.20 (0.008) e −D− DIM A A1 b C D E e L HE 1 M D 0.20 (0.008) E HE C STYLE 5: PIN 1. GATE 2. SOURCE 3. DRAIN A L MILLIMETERS MIN NOM MAX 0.70 0.80 0.90 0.00 0.05 0.10 0.15 0.20 0.30 0.10 0.15 0.25 1.55 1.60 1.65 0.70 0.80 0.90 1.00 BSC 0.10 0.15 0.20 1.50 1.60 1.70 A1 SOLDERING FOOTPRINT* 0.356 0.014 1.803 0.071 0.787 0.031 0.508 0.020 1.000 0.039 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 INCHES NOM 0.031 0.002 0.008 0.006 0.063 0.031 0.04 BSC 0.004 0.006 0.061 0.063 MIN 0.027 0.000 0.006 0.004 0.059 0.027 MAX 0.035 0.004 0.012 0.010 0.067 0.035 0.008 0.065 NTA4151P, NTE4151P SC−89, 3 LEAD CASE 463C−03 ISSUE C A −X− 3 1 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 463C−01 OBSOLETE, NEW STANDARD 463C−02. B −Y− S K G 2 PL D 0.08 (0.003) M DIM A B C D G H J K L M N S 3 PL X Y N M C J −T− MILLIMETERS MIN NOM MAX 1.50 1.60 1.70 0.75 0.85 0.95 0.60 0.70 0.80 0.23 0.28 0.33 0.50 BSC 0.53 REF 0.10 0.15 0.20 0.30 0.40 0.50 1.10 REF −−− −−− 10 _ −−− −−− 10 _ 1.50 1.60 1.70 INCHES NOM MAX 0.063 0.067 0.034 0.040 0.028 0.031 0.011 0.013 0.020 BSC 0.021 REF 0.004 0.006 0.008 0.012 0.016 0.020 0.043 REF −−− −−− 10 _ −−− −−− 10 _ 0.059 0.063 0.067 MIN 0.059 0.030 0.024 0.009 SEATING PLANE SOLDERING FOOTPRINT* H H L G *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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